TW436923B - Method and apparatus for etch rate stabilization - Google Patents

Abstract

A method of consecutively processing a series of semiconductor substrates with minimal etch rate variation. The method includes steps of (a) placing a semicondcutor substrate on a substrate support in a plasma etching chamber, (b) maintaining a vacuum in the chamber, (c) etching an exposed surface of the substrate by supplying an etching gas to the chamber and energizing the etching gas to form a plasma in the chamber, (d) removing the substrate from the chamber; and (e) consecutively etching additional substrates in the chamber by repeating steps (a-d), the etching step being carried out by maintaining an amount of reactive gas in contact with an exposed surface of the substrate at a level sufficient to obtain a repeatable rate of etching for each of the substrates processed during repeated step (c). An apparatus useful for carrying out the method includes a plasma etching chamber having a substrate support in an interior thereof and a dielectric member facing the substrate support, a gas supply supplying etching gas into the interior of the chamber, an antenna passing RF energy through the dielectric member, a vacuum pump separated from the interior of the chamber by an adjustable gate valve, and a controller maintaining an anount of reactive gas in contact with an exposed surface of the substrate at a level sufficient to obtain a repeatable rate of etching for each substrate processed in the chamber during consecutive single substrate etching of batch of substrates.

Description

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 43692 34. A7 ___B7_____ V. Description of the invention (1) The scope of the invention The invention relates to the improvement in the plasma processing chamber, and also to the plasma on the substrate (such as a semiconductor wafer) Etching metal, polycrystalline silicon, or dielectric layers. BACKGROUND OF THE INVENTION A plasma processing system in which an antenna is coupled to a radio frequency (RF) source and energizes a gas into a plasma state being processed is disclosed in U.S. Patent Nos. 4,948,458; 5,198,718; 5,241,245; 5,304,279: 5,401,350; ^ 5,571,366 . In these systems, the antenna is located outside the processing chamber and provides the transfer energy to the RF into the processing chamber through a dielectric wall or window. These processing systems can be used in a variety of semiconductor processing applications such as etching, deposition, peel resistance, and more. g When these systems are used to plasma etch a batch of semiconductor substrates that are continuously processed, the etch rate may change during the etching of the batch of substrates. These variations in etch rate are not ideal because features that have been etched into the substrate may fall outside acceptable product parameter ranges. Therefore, it is necessary to use a technique of a plasma processing chamber and a plasma etching method so that a semiconductor substrate that is continuously processed can be processed with a better controlled etching rate. Summary of the Invention The present invention provides a method for continuously processing a series of semiconductor substrates with a minimum change in etching rate. The method includes several steps: (a) 'putting a semiconductor substrate on a substrate support in a plasma etching chamber; (b) holding a chitin in an etching chamber; (c) supplying an etching gas to an engraving Chamber and energize the etching gas to process the substrate in the manner of forming a plasma in the ridge etching chamber; (d) removing the substrate from the etching --- I-- (Please read the notes on the back before filling this page) -4-

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 3 coffee 34 λζ »· I ---------- B7____ V. Description of the Invention (2) Room removal: and (e) Repeat steps (a_d) in The additional substrate is continuously processed in the etching chamber, wherein the processing step is performed by maintaining a certain amount of reactive gas in contact with the exposed surface of the substrate to obtain a repeatable degree of survivability of the substrate. According to a preferred feature of the present invention, the semiconductor substrate may include a polycrystalline silicon layer, wherein the polycrystalline silicon is maintained in the step (c) and the etching chamber in the step (c) under a hollow pressure of less than 100 mTorr with HBr and Cl2 Etching. The better 疋 'etching line uses 眞 empty Caipu to form emptiness, wherein the 眞 empty system is opened from the etching chamber part by adjusting the gate valve, and the adjusting gate valve will be kept in a fixed position in step (c). In step (c), the RF offset frequency may be applied to the substrate by the substrate support and / or when step (c) is repeated, the flow rate of at least one composition of the etching gas may increase. For example, in step (c), the flow rate of at least one composition of the etching gas inside the etching chamber may be adjusted to be maintained at a fixed pressure and / or the flow rate of at least one composition of the etching gas in step (c) may be based on Real-time analysis of one or more substances inside the etch chamber to adjust. In a preferred embodiment, the planer or non-planer antenna will energize the etching gas into the electric purple state, wherein the antenna is partially opened by the dielectric member and the etching chamber. The dielectric member will at least co-expand with the substrate support, and the substrate support Has a ground capacitance of approximately 600 pF or less. Even better, the dielectric part includes a Teflon coating facing the substrate support, and the substrate support has a ground capacitance of about 200 pF or less.

The invention also provides a plasma etching device, including a processing chamber, which has a substrate-specific- # 面-向 基. Body support, gas supply for the -Du '妹 给-直-理-.. "........ Tian-line.1 殄 # 埤 能 终 RF -5- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) — — — — — — — — — -JIJ — ΙΪΙ ------- 1 f Please read the notes on the back before filling in this page) A7 43 692 3 4 B7___ V. Description of the invention (3) Pass the dielectric part and energize the etching gas into the plasma state The emptying pump part is empty and the adjusting gate valve and the 4 chamber are used. The interior can be hidden, and the controller is used to keep a certain amount of active gas in contact with the exposed surface of the substrate, which is sufficient for the continuous single substrate to etch a batch of substrates. The degree to which each substrate obtains a repeatable etch rate. According to a preferred embodiment of the device, the controller continuously adjusts the flow rate inside the processing chamber of at least one composition of the etching gas and / or the controller keeps the gate valve in a fixed position while processing each substrate etching in the processing chamber. The substrate support can include electrodes that provide RF offset frequencies, and the controller adjusts to the RF offset frequency of each substrate as a single substrate is etched in succession. For example, the controller may adjust the flow rate of one or more components of the etching gas to be higher than the previous matrix group for later matrix groups. According to a preferred embodiment of the present invention, the controller adjusts the flow rate of one or more components of the etching gas to provide a hollowing-out pressure that is fixed inside the processing chamber during substrate etching. For example, the controller may trim the flow rate of one or more components of the etching gas based on the instant analysis of one or more active materials inside the processing chamber during substrate etching. When etching an individual substrate with a polycrystalline silicon layer, where the polycrystalline silicon layer is etched by HBr and Cl2 supplied to the interior of the processing chamber at an adjustable flow rate, the controller can control the aerial pump to maintain a fixed pumping speed and control the gate valve to maintain Fixed position, control gas supply to maintain HBr flow rate at a constant rate ', and control gas supply to change a sufficient amount (: 12 flow rate to compensate for the adsorption of living materials of the etching gas on the interior wall of the processing chamber. Schematic brief description- 6-This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) -1 --------------------------- Order ---- Line I (I read the precautions on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Employee Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 3 6 · 9 2 cf. 5 'Α7 ------- B7____ V. Description of the invention (4) The present invention will be described in more detail with reference to the attached drawings, in which: FIG. 1 shows a schematic cross-sectional view of a plasma etching chamber for implementing the method of the present invention. ; Figure 2 is a series of 18 wafer adjustment gate valves for plasma etching chamber processing The relationship between the number of wafers and the number of wafers; Figure 3 shows the operating pressure of 10 mTorr, antenna power of 350 watts, 100 watts of chuck, ci2 20 seem, HBr 100 seem, and chuck temperature of 60 ° C in the LAM 9400SETM plasma etching chamber. Figure 4 shows the relationship between the endpoint signal and time during the etching of polycrystalline silicon. Figure 4 shows the relationship between the efficiency and load resistance of the configuration of the LAM 9400TM processing chamber compared to the configuration of the lam 9600TM processing chamber. Figure 5 shows the processing of a series of 12 crystals. The relationship between the flow rate and the number of wafers during the circle period; Figure 6 is the operating pressure inside the processing chamber 10mTorr, the antenna 350 watts power, chuck 100 watts, Cl; the variable flow rate and HBr 100 seem to etch For polycrystalline silicon, the relationship between the polycrystalline hard etching rate and the flow rate of Cl2; Figure 7 shows the total amount of HBr and Cl2 when processing a series of 12 wafers with a fixed 5: 1 ratio of HBr and Cl; Relationship between voltage, power, flow rate of HBr and ci2 and number of wafers; Figure 8 shows the relationship between polysilicon etch rate and number of wafers when HBr & ci2 is used to etch polycrystalline silicon at a ratio of 5: 1 Figure 9 shows that ci2 remains fixed when processing a series of 12 wafers The rate is 20seem and the flow rate of Hbr varies, the voltage, power, and the relationship between the flow rate of HBr and Cl2 and the number of wafers; this paper is also applicable to China National Standard Cui (CNS) A4 specification (21〇X 297) ) III I --- ^ i! I --- ^ ---— II --- ^ I (Please read the precautions on the back of the page before filling out this page) Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Α7 Β7 V. Description of the invention (5) Figure 10 is the relationship between the polysilicon etch rate and the number of wafers when polycrystalline silicon fragments are etched at a constant flow rate of HBr while Cl2 is maintained at 20 seem. Figure 1 1 is a processing series 1 2 For each wafer, the flow rate of Cl2 fluctuates and the fixed flow rate of HBr is 100 sCCIn. The relationship between voltage, power, and the flow rate of HBr and Cl2 and the number of wafers; The relationship between the etching rate of polycrystalline silicon and the number of wafers when the polycrystalline chip is etched at 100 mm. Figure 13 shows the variation in the flow rate of cl2 and the fixed flow rate of HBr at 100 seem when processing a series of i 2 wafers. And the food delivery speed increases, the voltage, power, and the relationship between the flow rate of HBr and Cl2 and the number of wafers: Figure 14 is a ci2 variable flow rate, HBr fixed The relationship between polycrystalline silicon etch rate and the number of wafers when polycrystalline silicon is etched at a rate of 100seem and the pumping speed is increased; Figure 15 is the processing of a series of 12 wafers, where the Cl2 flow rate changes and HBr is not supplied For the processing chamber, the relationship between voltage, power, and ci2 flow rate and the number of wafers; Figure 16 is the relationship between the polysilicon etching rate and the number of wafers when the polycrystalline dream is etched with varying Cl2 without HBr; Figure 1 7 The relationship between the flow rate of Cl2, the fixed flow rate of HBr at 100 seem, and the increase of pumping speed, and the relationship between chamber pressure and air flow rate and time when processing silicon-adjusted wafers; Figure 18 shows the processing of photoresist-coated crystals. When it is round, it makes the ci2 flow rate change, the HBr flow rate fixed at 100 sccm, and the pumping speed increases, and the relationship between the chamber pressure and air flow rate and time; -8- This paper size applies the Chinese National Standard (CNS) A4 specifications (210x297 male "", I ------------ I II (please read the precautions on the back before filling out this page) Order ------.---- Ministry of Economics Intellectual Property Bureau employee consumption cooperation Du printed A7 B7 V. Description of invention (β) Figure 19 shows the processing of a series of 12 wafers, of which Cl2 Rate change, HBr flow rate fixed at 100 sccm and pumping speed increased, the relationship between the air flow rate and the number of wafers; Figure 20 shows the operating pressure inside the processing chamber 10mTorr, the antenna 350 watts power, and the chuck 100 watts power And the optical emission spectrum (OES) when etching bare silicon wafers under Cl2 100sccin; Figure 21 shows the operating pressure inside the processing chamber 10mTrr, 350W antenna power, 100W power chuck Moreover, the optical emission spectrum (OES) when a bare silicon wafer is etched under γΒγ 100 seem; and FIG. 22 shows the operating pressure inside the processing chamber 10 mT0rr, the antenna 35 watt power, and the chuck 100 watt power Optical emission spectrum (〇pHcai emission spectrum; OES) at the time of Japanese Yen with ci2 20 seem and HBr 100 seem carved with multiple broken coatings. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention provides an improved plasma processing reactor and plasma etching method 'which can provide more repeatable results when etching a batch of continuously processed semiconductor substrates. Especially in the process of etching a batch of semiconductor wafers, it has been found that the change in the axial etch rate may have a property of sudden increase or decrease of up to 30% or a property of slow change that occurs for several hours. The change in etch rate appears to be related to the history of the plasma chamber, and especially to the type of substrate that has been previously processed. One method often used to stabilize the etch rate of a diaphragm is to process 25 (or more) dummy wafers (pure silicon) before processing the normal product wafers. Although this technology does have a stable effect at the beginning, because it will be -9- this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------ I 1 ί 1 ϊ Ϊ 11111-^ — — — — — — — — — (Please read the note on the back before filling in this page)

4 3 6923 (A7 V. Description of the invention (7) Etching of various types of product wafers, the etching rate quickly becomes very unstable. In addition, processing fake wafers in this way is not only time consuming and leads to tool holding costs In the production environment, users of plasma etching tools hope that the tools have stable and reproducible performance, so that they can ensure that all processing steps are within the specified processing window. CL or CVHBr gas is used to etch polycrystalline silicon. After processing a photoresist-coated wafer, a significant decrease in etch rate was shown. This etch rate can be reduced by as much as 20-30% of the original rate. After the silicon dioxide-coated wafer is etched, 'polycrystalline silicon' Etching rates typically increase by several percentage points. In another case, etching multiple tuned wafers requires restoration of the etch rate, which results in wasted tool time and reduced wafer yield. Experiments have been designed and standardized to quantify these The typical processing sequence includes etching five (or more) pure silicon-regulated wafers, one polycrystalline silicon-coated wafer, and five photoresist-coated wafers. Wafer and another polycrystalline silicon coated wafer. The difference in etch rate between the initial polycrystalline silicon coated wafer and the final polycrystalline silicon coated wafer can be seen and can be used to measure process variations. The most ideal is the etch rate Keep the same. In the subsequent test, the lower RF offset frequency on the substrate support (ie, the chuck with mechanical or electrostatic clamping) has a radio frequency probe to measure the electrical I of the processing chamber. , Current and RF signal phase. These measurements are used to calculate the load (processing chamber plus plasma) impedance and the load power delivered to the processing chamber. Other evaluations to identify the source of changes in etching rate are the optical signals emitted by the plasma (Two wavelengths) and gate valve (such as the variable gate valve manufactured by VAT in Switzerland, which is referred to as "V AT valve") position of the pumping speed of the processing chamber ', where the gate valve is located at -10- Standard (CNS) A4 specification (21〇X 297 mm) (Please read the notes on the back before filling out this page) »un II 1 ^ 1 ^ 1 ϋ ^ -5,... Line! Intellectual Property Bureau, Ministry of Economic Affairs Employee consumption cooperation Print A7 B7 43692 3 V. Description of the invention (8) Between the pump and the processing chamber. The method and device of the present invention can be implemented in any suitable plasma etching reactor, in which individual base systems are continuously processed. The relatively common etching reactor is an inductively coupled plasma reactor as shown in Figure 7F. According to the present invention, the plasma etching reactor is modified to include a controller, which is suitable for batch processing of individual semiconductor substrates to achieve an etching rate. Stable. This reactor can include any suitable source to generate plasma in the processing chamber and any suitable gas supply for sending the gas to the processing chamber (such as air ring, spray head, gas nozzle fixedly installed to extend through The opening of the dielectric window, etc.). In the specific embodiment shown in FIG. 1, the emptying processing chamber 10 includes a base fixing seat 12 for providing electrostatic clamping force to the base 13 and 1117 offset frequency to the base support and a The central ring 14 is used to limit the plasma in the area above the substrate while cooling back to 6 times. For maintaining high density (for example, 10n_1012 iOns / cm3) The energy source of the plasma in the processing room, such as a planer antenna powered by a suitable rF source, and related RF impedance matching circuits, 1 9 inductive coupling The rf energy is introduced into the processing chamber 10 'so as to provide a high density plasma. The processing chamber includes a suitable vacuum pumping device, wherein the vacuum pumping device includes an adjustable gate valve (not shown) connected to the outlet 15 to maintain the required pressure inside the processing chamber (for example, below 50 mTorr, typically l-2. mTorr). The reactor shown in FIG. 1 includes a dielectric layer 20 of substantially uniform thickness which is interposed between the antenna 18 and the interior of the processing chamber 10. However, other sky green and / or window configurations such as non-planer antennas and / or non-planer dielectric windows may be used. Furthermore, while any suitable gas supply mechanism can be used, the specific embodiment showing the gas distribution ring 2 2 surrounding the center ring 14 includes multiple paper sizes that are applicable to China National Standard (CNS) A4 specifications (210 X 297 (Mm) (Please read the business matters on the back before filling out this page) ----- I--Order --- i -----! Printed by the Intellectual Property Bureau Staff Consumer Cooperatives of the Ministry of Economic Affairs 43692 3 A7 B7 5 Description of the invention (9)

A gas outlet (for example, 18 spaced-apart outlets) such as a circular hole (not shown) is used to send the processing gas supplied by the gas supply 23 to the processing chamber. The base fixing seat 12 may include several conventional features such as a lever raising mechanism (not shown) for raising the base 13. Under normal operating conditions, the flow of gas to the processing chamber is fixed, and the pressure in the processing chamber is constantly adjusted by the computer control to keep the VAT valve open (typically about 10 mTorr). For example, when processing 40 conditioning wafers, it has been observed that the polysilicon etch rate slowly increases and the VAT valve opens slowly. Figure 2 shows that during the adjustment of the first 10 adjustment wafers and the first polycrystalline silicon-coated wafer, the VAT valve slowly opens. But when the photoresist-coated wafer is etched, the VAT valve closes quickly and the polycrystalline silicon Reduced etching rate. Table ^ summarizes the reduction in polysilicon etch rate after processing five photoresist-coated wafers in two different processing chamber configurations (ie, LAM 9400 ™ and LAM 9600TM). Form I (Please read the notes on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed on the polysilicon etching rate and the transmission of RF lightning force after processing five photoresist-coated wafers Processing room and operating conditions Etching rate change% Transmission power change% 9400 / Gas flow rate fixed / adjustable VAT / P = 10 mTorr -22.5% ~ -15% 9600 / Gas flow rate fixed / adjustable VAT / P = 10 mTorr -12.8% -2.3% 9400 / VAT fixed 疋 12 flow rate change / P = 10 mTorr -12.9% ~ -15% 9600 / VAT fixed / Cl2 flow rate change / P = 10 mTorr + 1.1% -4% Applicable to China National Standard (CNS) A4 specifications (21 × X 297 mm I --- Order--------- Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economics A7 B7 V. Invention Description (1〇 ) The analysis of these experiments has resulted in the following explanation of the variation in the etch rate of polycrystalline silicon. The decrease in etch rate after processing a resist-coated wafer is due to the process chamber walls being covered with etched photoresist fragments. This This covering then absorbs a large amount of the incoming gas until the wall is completely passivated. This means etching the crystals The available gas is reduced and the pressure in the processing chamber is reduced. This in turn means that the polysilicon etch rate is reduced and the VAT valve is closed to maintain the fixed processing chamber pressure. The optical signal of the etched silicon material is also significantly reduced, as shown in Figure 3. Then the subsequent absorption of gas and other molecular residues can reach several hours, even if the resist-coated wafer is no longer processed. If the mixed processing chamber is pumped overnight, many walls will desorb many etchings. Gas, when the processing is started again, the residue on the wall will strongly absorb the etching gas again, and the etching rate will decrease again. If the surface oxidized wafer is etched with gas, the chip will be separated and released in the form of SiCl4. Oxygen is emitted. Oxygen will actively remove the photoresist fragments on the walls of the processing chamber, so that the walls will not be severely passivated with gas, and the subsequent polysilicon etching rate will be higher. One method to evaluate these effects is to consider The processing chamber has three pumps and three gas sources. These pumps are equivalent to booster pumps, wafers and processing chamber walls. And these gas sources When it comes to the inlet material flow controller, wafer and processing chamber wall. When various pumping mechanisms consume gas at different speeds, Mathcad models are developed along these lines to calculate partial pressure and etch rate. The results show that When the etchant remains, but the molecular residual desorption occurs at a relatively low speed, a large amount of the entered gas is "emptied" by the wall of the processing chamber. This produces a net pumping effect on the wall, and to compensate, the VAT valve will Close. When processing wafers with an oxidized surface, -13- This paper size applies to Chinese National Standards (CNS> A4 specification (21 × x297 mm) ------------- ^- -(Please read the notes on the back before filling this page) Order ------: --- line! A7 B7 4 3 892 3 V. Description of the invention (11) The deposits on the wall will be released and the net production of gaseous products will occur. In this case, it can be observed that the VAT valve opens slightly when processing the wafer. The above chemistry and pumping effects are only part of the problem of etch rate. When using the [AM 9400TM tool and changing the substrate of a silicon wafer to a wafer with a resist coating, negative resistance and load power were not observed (precise measurement is not possible, so the specific processing room is designed for large capacitance). The decrease in the load resistance is due to the fact that the chemical elements in the processing bath change with the etching of the photoresist. This decrease causes the operating point to fall below the power efficiency curve and the transmission power to fall. This results in a further reduction in the polysilicon etch rate, which is comparable in magnitude to the chemical and pumping effects described above. The power reduction of the LAM 9600TM tool is less, because it is processed to a lower valley, the operating point is slightly higher than the efficiency curve, and the impedance of the load power on the load resistance is lower. Figure 4 shows the relative position on the efficiency curve and the effect of photoresist-coated wafers on load resistance and transfer power. As shown in Table I, the transmission power of the two processing chamber configurations decreased. The third effect is that the temperature of the processing chamber may increase during processing. But the temperature effect is considered to be much smaller than the chemical and RF power effects. Several experiments have been performed in an attempt to rule out chemical and RF utility. The first experiment (performed on the LAM 9400 ™ tool) altered the shroud circuit by adjusting the position of the VAT valve to maintain a constant pressure at the breast inlet flow rate. In the new circuit, the position of the VAT valve is fixed, and the pressure in the processing chamber is kept constant by changing the gas flow rate to compensate for the pumping effect of the wall of the processing chamber. As shown in Table I, 'This resulted in a 12.9% change in polysilicon etch rate after processing five resist-coated wafers (22.5% for a standard servo loop), but still with a reduction in transmission power ~ 15% »This The results show that the chemical effect has been compensated, but r ρ -14- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ------------ Shang! !! --Order --- II ---- line (Please read the notes on the back before filling out this page) Printed by the Intellectual Property Bureau Staff Consumer Cooperatives of the Ministry of Economic Affairs 43β92 V. Description of Invention (彳 2)

No effect. Then the processing chamber configuration was changed to a smaller processing chamber capacitance (200pF »LAM 94〇〇τμ ^ ^ ^ '600pF) ^ LAM 9600SE ™ X X _ Try to minimize the decline in RF power. After repeating the experiment, it was shown that after five & agent-coated wafers, the transmission power decreased by about 4%, which means that the chipping rate increased slightly by u%. This means that both chemistry and yang branch have large compensation. Figure 5 shows that while maintaining the HBr flow rate® at 100 °, the gas flow rate is more than double that when processing photosensitive anti-coated wafers. The increase in gas flow rate is equivalent to an overall gas flow rate increase of about 21%. The foregoing tests show that the wafer only shows a very small portion of the entire plutonium process (under the above conditions) 'To understand the several effects that occur, you must fully observe the processing chamber. The test data shows that the improvement of the reproducibility can be achieved, and the cost of holding can be reduced by modifying the etching treatment by taking into account the absorption effect of the composition of the components on the tread wall of the processing chamber. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Several experiments have been conducted in the past to investigate the feasibility of controlling the flow rate of α and tear as a device to improve the reproducibility of the etching rate when etching polycrystalline dreams. The improvement of the etch rate and reproducibility can be achieved by the method of calculating the conditions of various processing chambers generated during the process of the present invention. Optical Emission Spectroscopy (OES) has been analyzed when silicon and photoresist are etched at a flow rate of pure A with brain gases and these gases. The standardized order of 12 wafers is used to quantify the difference in etch rate before and after processing four broken coating adjustment wafers and before and after processing five photoresist coated wafers. The rate of air flow is low, and under the traditional control conditions that the processing room Caipu speed is kept constant to maintain the pressure, after the photoresist-coated wafer is processed by the MM 940IPOT ™ tool, the polysilicon etch rate is reduced by 15%. . However, if the grounding capacitance is about 200pF (for example, lam -15- this paper size applies the Chinese National Standard (CNS) A4 specification (21 × 297 mm) 43692 3 A7 ----- B7 V. Description of the invention (13) When processing under the 9600SETM tool but not in the processing chamber with a ground capacitance of ~ 600pF (9400 tool), this percentage reduction can be reduced to half. The reason for this is that after processing the photoresist-coated wafer, the RF power sent to the processing chamber dropped by ~ 15% in the 9400TXtmX tool, but only decreased by 0 to 4% in the 96003 ugly processing chamber. . The decrease in power occurs because the increase in plasma resistance results in a decrease in load resistance. The increase in plasma resistance may be due to the chemical changes in the plasma while processing the photoresist wafer and the possible decrease in electron temperature. Measurements made on the LAM tool include a quartz Ί'CPTM window and a ceramic air ring surrounding the electrostatic chuck. The grounding capacitance of the chuck is ~ 200pf. The same wafer sequence was performed for each experiment 'and the polysilicon etch rate was measured. Table workers represent the sequence and baseline measurements of the measurements made. Before each execution, the processing chamber will use SFe and & feed gas to remove the plasma to the endpoint. The starting thickness of polycrystalline silicon on each of the three etch rate wafers was determined using Prometrix FT-650. After processing two wafers, the remaining thickness of polycrystalline silicon was measured and the etch rate was determined. The RF power to negative% is not actively controlled by the feedback loop from the rj? Probe, where the RF probe is located in the RF offset frequency matching network. The experiment is based on a low process chamber capacitance to avoid excessive reductions in power efficiency as load resistance results change. During each experiment, the VAT valve was held in a fixed position and the flow rate of one or more feed gases was changed to maintain a fixed process chamber pressure of 10 mTorr. Before turning on the RF and etching each wafer, the flow rate of the green gas also recorded the RF parameters (voltage, current, phase, transmission power, load resistance, and load reactance) from the RJ? Probe. In -16- this paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) ----- Printed by A7 43S923, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of the Invention (μ) After RF power is turned on, the gas flow rate will usually decrease at first. In the case of photoresist-coated wafers The remaining etch rate will then increase steadily. The gas flow rate 値 and R F parameters are relative to the etching-half time, which is about 30 seconds after the R F power is turned on. Five tests were performed by changing the flow rate of one or both of the feed gases' while maintaining a fixed pressure of 10 mTorr in the processing chamber. The five tests are as follows: (i) Change the flow rate of HBr and Cl2 simultaneously at a ratio of 5: 1 (Π) only change the flow rate of HBr, (: 12 maintain the flow rate 20 seem (iii) change only the flow rate of Cl2 HBr maintains a flow rate of 100 sccm (iv) Repeats the third test at a higher pumping speed (v) only changes (: a flow rate of 12 and HBr maintains a flow rate of 0 seem The measurement of sand etch rate is considered to be under similar processing conditions, except that the pump speed is changed to maintain the processing chamber pressure at 10 mTorr. 'Clean processing chamber <: 12 flow rate (plus 100 sccn ^ HBr) function Said. The results are shown in Figure 6. The polycrystalline dream etching rate increased from 1750 A / min for pure HBr to ~ 2650 A / min when Cl2 was added at 50 Seem. The remaining rate using only Clz was about using only HBr These etching rates are very useful in interpreting the results of the tests ⑴ to (V). Table III summarizes the results of these five experiments. The results of the previous two tests are similar. 'Because changing the two gases at a ratio of 5: 1 will Resulting in a very small change in the Cl2 flow rate, so only the flow rate of HBr has been changing. When the HBr flow rate is changed, the polysilicon etch rate is very similar (within 0.5%). However, etching five photoresist-coated wafers will cause the etch rate to drop to 12 to 15%. This situation can be compared with the third experiment Cl2 flow rate change -17- This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) < Please read the precautions on the back before filling this page) Binding --------- ---- Printed clothing A7 B7 43 692 3 of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention description (15) The HBr flow rate was fixed at 100 sccin for comparison. The opposite effect occurred here. After adjusting the wafer, the etching rate decreased by about 2%, but the photoresist-coated wafer remained approximately fixed after etching (+3 50 /.). This shows that the conditions of the processing room wall and wafer are when the wafer is adjusted When the money is engraved, the HBr (ie, hafnium, Br) sub-products are preferentially consumed, and when the resist-coated wafer is etched, the products from ClJCl are preferentially consumed. Before the rf power was turned on, the total gas flow rate remained approximately constant throughout the 12 wafer sequences. This means that the flow rate has nothing to do with the walls of the processing chamber, and there is little or no chemical phenomenon until molecular decomposition occurs. Again, this is like the minimal role of Br2 and 112 in process room conditioning. The third experiment was repeated at higher pumping speeds (260 and 230 VAT valves) because the Cl2 flow rate was very low after four adjustment wafers. In this case (test (iv)), the Cl: flow rate starts at 55 seem because a large amount of HBr is being lost to the walls of the processing chamber and the pump. The high flow rate of Cl2 results in a fairly high polysilicon etch rate of 2500 A / min. When the wall of the processing chamber is filled with HBr products, the Cla flow rate drops to 13 seem to compensate, and the polysilicon etch rate decreases by 21%. In contrast, when photoresist-coated wafers were etched, mainly the Clz product was consumed and the C12 flow rate increased again to 42 seem. The polycrystalline coin-cut rate increased moderately by 5%. The excessive compensation of the etch rate may be because some ηβγ products are consumed during and immediately after the photoresist is etched, and are compensated by the rapid etching gas. Compensating for depleted etch products by increasing the gas flow rate (which may be accompanied by a small increase in HBr flow rate) may provide a viable etch rate stabilization technique over a certain operating range, but this is not a universal solution because the post-wafer etch is adjusted The rate display changes. At the same time, the pump speed should be selected. -18- This paper size applies to the Chinese National Standard < CNS) A4 size (210 X 297 mm) (Please read the precautions on the back before filling out this page) -I Loading ·! -Ordered by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 43692 3 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (π) 愼 Decision, This is because over-compensation of the etch rate occurs at higher pump speeds. Since the processing chamber wall pumping products of the wafer and the main substance at different rates seem to depend on the type of wafer or the processing chamber conditions, accurate compensation should be obtained by measuring the gaseous contents of the processing chamber in real time. For example, measurements with appropriate analytical techniques (such as OES spectroscopy) should be used for this purpose. RGAs with different strategies can also achieve the desired results but increase costs in the production process. In terms of economics, compensating the CL flow rate is probably the lowest price and the easiest to implement in the production process. The fifth experiment was performed using only gas. This may not be a viable option for production, but will complete the flow rate compensation test when complete. The use of a single gas should be straightforward, as the flow rate increases as the product is consumed to compensate for losses. From Table III, it can be seen that the polycrystalline etch rate increased by 1.8% after adjusting the wafer, and decreased by 0.8% after the photoresist wafer. The small changes in airflow rate are surprising compared to previous experiments. When using HBr and Cl2 at the same time, the flow rate changes from 10 to sccm, but when only gas is used, a change below 10 seem is sufficient to compensate the etching rate. In these five experiments, the uniformity of the etch was very good, deviating from the standard by only about 2.5%. The etch profile across the etched polycrystalline silicon wafer etched the edge slightly faster in the previous three tests, and test (iv) was particularly uniform, probably due to the higher gas flow rate. In test (v), the center etch is slightly faster. It is important to compare the density of the decomposed molecules with the density of existing ions in the plasma. At 10 mTorr, there are about 1014 atoms and molecules per 1 cm3. If the electron density is ~ 5x 101 °, only one particle in 2000 will be ionized. Changes in gas pressure due to decomposition and derivative flow rate changes 19-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) I .-- ml ------ Pack --- -丨 丨 Order--II ---- line (please read the urgent matters on the back before filling this page) ^ 3 692 3 A7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs B7 V. Invention Description (17) One of the particles is a decomposed fragment. The strong reaction of the decomposed atoms will result in rapid depletion and significant changes in flow rate '. Figure 7 shows the changes of load power, load power, ci2 flow rate, and HBr flow rate of the test puppet. The etching rate of the etched polycrystalline wafer is shown in FIG. 8. It can be seen that the load ephemeris has a lower influence on the control of the etch rate of polycrystalline silicon, and the load voltage has more influence on the etch rate control of more practical processes such as gas-etched Si02 or photoresist. Similar curves for other tests are shown in Figures 9-16 to illustrate the effects described. When processing wafers, the airflow rate range may change significantly. Figure I 7 shows the gas flow rate and process chamber pressure as a function of etch time for the third wafer test. On the left side, the fixed HBr flow rate provided the processing chamber pressure of 8 mTorr, and after 3 seconds, the gas was turned on to increase the pressure to mTorr. After 12 seconds, the A F was opened, and the pressure first increased and then decreased back to 10 mTorr. The gas flow rate continued to decrease and was not completely stable even at the end of the etching. The previous conditioning wafers have even slower flow rate drops, while the subsequent conditioning wafers stabilize the flow rate at a faster rate. The reduction in flow rate can be compared with the first photoresist wafer (test (^) 7th), as shown in Figure 18. Here, after the flow rate stabilizes fairly quickly, the latter increases throughout the etch and passes through all subsequent photoresist wafers. This process can be reversed only by changing the wafer from a photoresist to a silicon wafer. Figure 19 shows the airflow rate before RF is turned on and the range of airflow rate (after pressure stabilization) per wafer for test (iv). These change the flow rate points and complicate the importance of the consuming mechanism and processing chamber to the etching process. According to a specific embodiment of the present invention, the flow rate of Ηγ and / or ci2 must be controlled according to the conditions of the processing chamber and the type of wafer. In order to control one or more -20- this paper size is applicable to China's national crisis ririuc, λ ^ day from / Τι_Λ. μ ，. 、 may s / y < υ 1 hisft * c ο > 1 ^ -------- Order -------- line (please read the precautions on the back before filling in this Page) 43692 3 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (18) Process gas flow rate to obtain etching stability. According to the present invention, the optical emission spectrum can provide the necessary gaseous elements of the processing chamber. Information. When assessing the technology for monitoring this radiation signal, a gas-only spectrum, only HBr, and a 5: 1 ratio HBr / Cl2 mixed wavelength range 240-850 mm were used. FIG. 20 shows a spectrum taken when a bare silicon wafer is etched with gas. All lines greater than 700 nm at the wavelength position are due to atomic gas, while lines and bands between 300-400 nm and 500-600 nm may be due to vaporized silicon etching products. When only HBr was used, the spectrum shown in Fig. 21 was obtained, and it was confirmed that all lines were related to atomic bromine. The line attributed to hydrogen does not appear because it is largely separated in energy. Figure 22 shows the spectrum obtainable using a mixture of Cl2 and HBr. The etching products from the silicon wafer can be seen again, but there may be no atomic gas lines except the 837.6 nm line which is clearly shown in the pure gas spectrum in Figure 20. Even if the HBr: Cl2 ratio entering the processing chamber is 5: 1, the optical emission of atomic gas seems to be suppressed. A possible explanation for this result is that the evacuated aspirated plutonium and B r may have consumed Ci2 on the walls of the processing chamber. Although the test shows that there is no (: 12 line in the HBr / Cl2 mixture, this makes the OES technology described here not suitable for measuring the ratio of Br / Cl, but it is estimated that other suitable for obtaining the proportion of the gas composition gas when the substrate is etched immediately The measurement technique can be used in accordance with the method of the present invention in order to obtain a reduction in the change in etching rate when batch-etching a continuous etching wafer. When etching a photoresist wafer, the only observable spectral line is atomic bromine. However, after five wafers were etched, the strength of these lines decreased fourfold. This may be due to the decrease in electron temperature caused by the appearance of anti-etching products in the plasma. These large fragments are expected to have many low-energy states, which will Stop -21-t ... Zhang scales are applicable to Chinese National Standard (CNS) A4 specifications. (〆Please read the precautions on the back before filling this page)

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^ 3 592 3-V. Description of the invention (19) Electron electrons obtain a large amount of energy. As such, depending on the equipment and the actual process, OES may not provide the required degree of plasma element monitoring. The effect of the treatment room walls (such as side walls, inserts, sprinklers, dielectric windows, etc.) on the change of the cast rate has been investigated by coating the treatment room walls with a passivating substance. For example, the coating of the processing chamber may use various substances such as ceramics or organic substances. Although ceramic substances have been found to be of little help in stabilizing the etch rate of polycrystalline silicon, organic substances such as polytetrafluoroethylene (ie, Teflon TEFLONT) have been found to provide surprisingly good results. According to the present invention, combined control for the purpose of etch rate stabilization With one or more process gas flow rates, the etch rate change of several batches of wafers (such as photoresist, oxidized surface, polycrystalline silicon, and dummy wafers) can be reduced to less than 5%, more It is better to reduce it to less than 2%. The stability of these etching rates is equivalent to an improvement of 5P% in order compared with the traditional processing process. ^ The stability of the etching rate can be improved with or without a stable coating. It is a processing chamber configuration with a low processing chamber capacitance below 300 pF, more preferably below 200 pF. With the improvements available according to the present invention, the etching process can be expected to be performed without the need to start production wafer production. , Execute the silicon adjustment wafer through the plasma chamber. (Please read the precautions on the back before filling this page) Installation -------- Order --------- line! Intellectual property of the Ministry of Economic Affairs Printed by the Bureau's Consumer Cooperatives-22- This paper is in use _ Home Standard (CNS) A4 Specification ⑽ 297 Gongchu 4 4692 3 A7 5 ---------- Description of Invention (2〇) Form II Crystal S Sequential Wafer Number Wafer Type 1 Polycrystalline Rare Rice Carving Rate 2 Bad Silicon / Adjustment 3 Adjustment 4-Adjustment 5 Adjustment 6 Polycrystalline Dream Rice Carving Rate 7 Photoresist Coating 8 Photosensitive Anti Money 9 Photosensitive Resist 10 Photoresist 11 Photoresist 12 Polycrystalline silicon etch rate processing parameters include the following: total pressure 10 mTorr, TCPTM power 350 watts, offset frequency power 100 watts, HBr flow rate 100seem, 012 flow rate 20 seem, ESC 8Torr Helium, 60 ° C, # tick duration 60 seconds. J I-^. —------ Order ----- I-- (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -23- This paper The scale is applicable to China Standard for Household Standards (CNS) A4 (210 X 297 mm) 43 692 3 B7 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (21) Form III First etching rate Second Etching rate third polycrystalline silicon change% polycrystalline chip change% polycrystalline sand etch rate etch rate etch rate wafer wafer wafer (# 1) (# 6) (# 12) standard open loop parameter polysilicon etch rate (A / min) Not measured 2127 -12.80% 1854 Total gas flow rate before RF (seem) 120 HBr flow rate during etching 100 100 100 During etching (: 12 flow rate 20 20 20 • VAT valve setting variable variable variable transmission ( Load) Voltage 136.6 127.7 139.4 Transmission (Load) Power (Watt) 60.5 61.8 60.4 Test (i), adjusted by 5: 1 (HBr + Cl2) Polysilicon Etching Rate (AAnin) 2027 0.25% 2032 -12.10% 1786 RF Front total gas flow rate (seem) 130 HBr flow rate during etching 111.4 90.4 105 Cl2 flow rate during etching 22.26 18.16 21 VAT valve setting 230 230 230 Transmission (load) voltage 135 128.4 136.4 Transmission (load) power (W) 54.5 58 54 , 2 Test (ii), Variable HBr + Cl2 Fixed flow rate 20 Seem Polycrystalline silicon etching rate (A / min) 2104 -0.38% 2096 -14.80% 1786 -24- ---------- II t- ------- Order --------- Line (Please read the back first! Please fill in this page before filling in this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ) 4 3 692 3: A7 B7 V. Description of Invention (22) Printed the first polycrystalline silicon etch rate wafer (# 1) by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and the second polycrystalline etch rate was changed. Circle (# 6) Etching rate change% Third polycrystalline sand Etched wafer (# 12) Total gas flow rate before RF (_) 137 HBr flow rate during etching 104 89.1 106.4 Cl2 flow rate during etching 20 20 20 VAT valve setting 230 230 230 Transmission (load) voltage 134.5 127.2 136.1 Transmission ( Electricity (watt) 56.9 57.7 54.9 Test (iii), change Cl2 + HBr fixed flow rate 100 seem polycrystalline silicon etching rate (A / min) 2066 -11.60% 1826 3.50% 1890 total gas flow rate before RF (scon) 135 etching HBr flow rate 100 100 100 Cl2 flow rate at the time of erosion 20 5.9 32.1 VAT valve setting 230 230 230 Transmission (load) voltage 133.2 125.9 138 Transmission (load) power (W) 53.4 54.4 50.8 Test (iv), higher Pump speed Repeat step iii. Variable Cl2 + HBr flow rate is fixed at 100 seem Polycrystalline silicon etching rate (A / min) 2501 -20.70% 1982 5.10% 2083 Total gas flow rate before RF (seem) 153 HBr flow rate during etching 100 100 100 Cl2 'flow rate during etching 55 13 42 VAT valve setting 260 260 260 (Please read the precautions on the back before filling this page) -25- This paper size applies to China National Standard (CNS) A4 specifications < 210 X 297 mm) 436923-A7 __B7 V. Invention Explanation (23) The first polycrystalline chip with a low etch rate (# 1) The change in the etch rate% The second polycrystalline silicon with an etch rate wafer (# 6) The change in the etch rate% The third polycrystalline wafer with an etch rate wafer (# 12) Transmission (load) voltage 128.7 120.7 131.4 Transmission (load) power (W) 53.2 53.1 52.3 Test (V), only Cl2 is changed; HBr flow rate = 0 Polycrystalline silicon etching rate (A / min) 3057 1.84% 3114 -0.79% 3089 Total gas flow rate before RF (scan) 124 HBr flow rate during etching 0 0 0 Cl2 flow rate during etching 101 104 110 VAT valve setting 200 200 200 Transmission (load) voltage 130.6 133 136.3 Transmission (load) power (W) 54.8 53.7 54.6 The principle, preferred embodiments and operation modes of the application of the present invention have been described above. However, the invention is not so limited to the specific embodiments discussed. Therefore, the above specific embodiments should be regarded as illustrative rather than limiting, and it should be understood that those skilled in the art can change these specific embodiments without departing from the scope of the present invention as defined by the scope of the patent application below. (Please read the notes on the back before filling this page)

n U -δ -----: ——: Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -26- This paper applies the national standard (CNS) A4 specification (210 χ 297 mm)

Claims (1)

8 88 8 ABCD 4 3 692 3 VI. Scope of Patent Application i. A method for continuously processing individual semiconductor substrates with the lowest etching rate variation, including the following steps: --------- 装 — {Please read the back first Note: Please fill in this page again.) (A) 'Place the semiconductor substrate on the substrate support in the plasma etching chamber; (b) Maintain the vacuum of the etching chamber; (c) Supply the etching chamber with the etching gas and make The etching gas is energized to etch the exposed surface of the substrate in a manner to form a plasma in the etching chamber; (d) removing the substrate from the etching chamber; and (e) repeating steps (ad) continuously etching additional substrates in the etching chamber, wherein The etching step is performed by maintaining a certain amount of active gas in contact with the exposed surface of the substrate to a degree sufficient to obtain a repeatable etching rate for each substrate processed in the step (c). 2. The method according to item 1 of the patent application scope, wherein the semiconductor substrate includes a polycrystalline silicon layer, and the polycrystalline silicon is etched with HBr and <: 12 in step (c). 3. The method according to item 1 of the scope of patent application, wherein in step (c), the engraving chamber is maintained at a vacuum pressure below 100 mTorr, and a vacuum pump will cause the etching chamber to form a vacuum. One of the adjustment gate valves is in step ( c) Keep the vacuum pump and etching chamber partly open at a fixed position ^ 4. As in the method of applying for the scope of patent No. 1 'wherein in step (c), the Intellectual Property Bureau of the Ministry of Economic Affairs, the employee's consumer cooperative printed support will An RF offset frequency is provided to the substrate. 5. The method of claim 1 in which the flow rate of at least one composition of the etching gas is increased when step (c) is repeated. 6. The method according to item 1 of the patent application scope, wherein the flow rate of at least one component of the etching gas is adjusted in step (c) to maintain -27 in the etching chamber. --- This paper size applies China B standard (CNS) A4 specification (210 X 297 mm) A8 B8 C8 D8 4 3 S92 3 Patent application scope fixed pressure. 7. The method according to the scope of patent application, wherein the flow rate of at least one composition of the etching gas is adjusted according to the real-time analysis of one or more active materials in the chamber in step (i). 8. For the method of patent application, the saturated or non-running antenna energizes the engraved gas into the plasma state. The dielectric part is used to separate the antenna from the etching chamber. The dielectric part is at least shared with the substrate support. Expansion, and the capacitance of the etching chamber is about 60 () # or less. 9. The method according to item 8 of the patent application, wherein the dielectric member includes a polytetraethylene coating for supporting the substrate, and the processing chamber has a processing chamber capacitance of about 200 pF or less. 10. A plasma etching device, comprising: a plasma etching chamber having a substrate support therein, the etching chamber including a dielectric component for supporting the substrate; a body supply for supplying an etching gas into the interior of the etching chamber; An antenna, which is separated from the processing chamber using a dielectric component, which transmits energy to the RF through the dielectric component and energizes the etching gas into the plasma state; a vacuum pump is used to form a vacuum inside the processing chamber. The vacuum pump is adjusted by using The gate valve is partially open from the processing chamber; and the controller 'is used to maintain a certain amount of reactive gas to a degree sufficient to obtain a repeatable etch rate for each substrate processed in the etching chamber during the continuous single substrate etching of the entire batch of substrates' The exposed surface of the substrate-28- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ------------ -------- Order --- ------ Line I (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 3 2 S 3 8 00 00 25 ABCD Cooperative six printing, contact patent scope. 11. The plasma etching device according to item 10 of the patent application park, wherein the controller continuously adjusts the flow rate of at least one component of the etching gas into the etching chamber. I2. The plasma etching device according to item i 0 of the patent application park, wherein the vacuum pump keeps the vacuum pressure inside the etching chamber below 100 mTorr, and etches each of the substrates during the continuous single substrate etching of the entire batch. The controller keeps the gate valve in a fixed position while etching the substrate being processed in the chamber. 13. The plasma etching device according to the scope of the patent application, wherein the substrate support includes a dielectric component for providing RF offset frequency, and is processed in each shaft etch chamber during continuous single substrate etching of the entire batch of substrates. For bases, this controller is used to adjust the RF offset to each base. i4. If the plasma etching device of item i 0 of the patent application scope, the controller adjusts the flow rate of one or more components of the etching gas during the continuous single substrate etching of the entire batch of substrates than the flow used by the previous substrate group. The rate is high for subsequent matrix groups. 15. For example, the plasma etching device according to the scope of the patent application, wherein the controller adjusts the flow rate of one or more components of the etching gas when the substrate is etched to provide a fixed vacuum pressure in the etching chamber. 16. For example, the plasma etching device of claim 10, wherein the control device will adjust the flow of one or more components of the etching gas according to the instant analysis of one or more active materials in the etching chamber when the substrate is etched. rate. -29- This paper size applies to China National Standard (CNS) A4 specification (210 X 297 public love) ------------ ^ -------- Order ------ --- Line I (please read the legal notices on the back before filling in this page) 4369 ^ 〇 ABCD VI. Patent Application Scenario 17. If you apply for a plasma etching device with the scope of patent application No. 10, the dielectric part will Co-expand at least with the substrate support, and the etching chamber has an etching chamber capacitance of about 600 pF or less. 18 ′ As in the plasma etching device of claim 17 in the scope of patent application, wherein the dielectric member includes a polytetraethylene coating for supporting the substrate, the etching chamber has an etching chamber capacitance of about 200 pF or less. 19. The plasma etching device according to item 10 of the patent application park, wherein when the individual substrate is etched, the controller maintains a fixed pressure in the etching chamber at a fixed pumping speed of the vacuum pump. 20_ If the plasma etching device of the scope of patent application No. 10, the substrate having a polycrystalline silicon layer will be supported on the substrate support, and the gas supply will provide HBr and Ch to the etching chamber at an adjustable flow rate, where the controller is used Control the vacuum pump to maintain a fixed pump speed, control the gate valve to maintain a fixed position, control the gas supply to maintain a HBr flow rate at a fixed flow rate, and control the gas supply to change a sufficient amount of Cl2 flow rate to compensate for the wall in the etched room. Absorption effect of etching gas active material. -----II-I, ----- 1 nn-、 Order (Please read the notes on the back before filling this page} Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy -30- Not used on paper China Weijiazhuang Standard (CNS) A4 Washer (210X: 297mm)