TW436899B - Equipment of 300 φ electron cyclotron resonance plasma machine-station - Google Patents

Abstract

This invention is about the equipment of 300 φ electron cyclotron resonance (ECR) plasma machine station, in which different geometrical contours and coupling manners are used to design an ECR plasma machine-station system that is suitable for large area wafer fabricating process. This invention includes the following units: a microwave source, which can generate 2.45 GHz microwave; circulator; dummy load; direction coupler; automatic matching instrument; electric wave mode converter; wave rotator; 500 φ microwave resonance cavity; microwave antenna; quartz microwave window; cooling fan; magnetic field source, which includes three sets of coils and is used to generate 873 gauss uniform planar magnetic field; 500 φ plasma reaction cavity body; 350 φ wafer holding base; vacuum connecting chamber; and molecular turbo pump. In this invention, high frequency rotation of electron in magnetic field (873 gauss) is mutually reacted with the right-rotating circularly polarized electromagnetic wave (2.45 GHz) to generate resonance. When this resonance is occurred in the vacuum gas pressure container (plasma reaction chamber), the gas molecules in the container will be ionized to form plasma.

Description

Α ^ ββ99 _ 5. Description of the invention (1) The present invention is a 300-degree electronic cyclotron resonance (ECR) plasma machine equipment, especially a mechanism suitable for large-area wafer processing. Electron Cyclotron Resonance (EC R) plasma source was developed in 1977 by the central research laboratory of the Japanese company, which proposed two types. The first is the antenna using ions in the plasma reaction chamber. Beam sputtering deposition and ion beam etching; the second is to couple microwave energy to a circular waveguide, and then use the microwave window to generate the ECR effect of the gas in the reaction furnace. This is the first equipment used in semiconductor etching in the scientific and technological field. Since then, the United States, Germany, France, etc. have successively started to research and develop ECR equipment, and have achieved considerable results, such as the decentralized ECR source developed by France; the HORN TYPE ECR source developed by Germany; the HELICON plasma developed by Australia Source; the PLALAR RF INDUCTIVE COUPLED PLASMA plasma source developed in the United States probably uses the same principle to generate plasma. If there are differences, the geometric shape and coupling method are different; while China is studying M ICROM A VE COUPLED PLASMA (MCP) plasma source technology has achieved considerable results. However, the current state of development in China's science and technology community has not been applied to large-area wafer processing. The electronic cyclotron resonance (ECR) plasma originated from the semiconductor engraved mechanism. The reason is that the inventor made research and development, simulation test analysis, and different geometric shapes and coupling methods to design an ECR plasma machine suitable for large-area wafer processing in order to enable the key semiconductor manufacturing technology to take root in the industry.台 系统。 Taiwan system. An object of the present invention is to provide a 3000 ECR plasma.

^ 3 ο 8 9 ^-" Z ----------- V. Description of the invention (2) Machine system 'due to the high electric shock density generated by the electron cyclotron resonator (EC R)' ion bombardment Low energy, so it can produce sub-micron etching effect. Another object of the present invention is to provide a 3000 ECR electrical installation system, which can linearly polarize microwaves at 2.45 GHz, and generate circularly polarized microwaves through the radio mode converter's gyrator, and then The large-area (> 400 mm ¢) microwave electric field is generated by the 18-type antenna, so it can be suitable for large-area wafer processing. In order to enable a further understanding and understanding of the purpose, shape, 'structure or device characteristics, and' effect 'of the present invention, examples are given below in conjunction with the drawings to explain in detail: Please refer to the first and second figures, the present invention is A "3000 Electron Cyclotron Resonance (ECR) Plasma Machine Equipment", which uses different geometric shapes and coupling methods to design an ECR plasma machine system suitable for large-area wafer processing, including a microwave source 1. Circulator 2, Dummy Load 3, Directional Coupler 4, Auto Matcher 5, Radio Mode Mode Converter 6, Gyrator 7'50 0 0 Microwave Resonant Cavity 8, Microwave Antenna 9, Microwave Window 10, 873 Gauss Magnetic field source 11, 50000 plasma reaction chamber 12 '350 0 Wafer fixed base 1 3, phase and amplitude detector 1 4, vacuum connection chamber 1 5, molecular turbo pump 16 and cooling fan 1 7 and other component units; Among them: the microwave source 1 is a 2.45 GHz microwave generated by a magnetron source. Circulator 2 connected to the exit of microwave source 1 ′, and the Circulator 2 and

Page 7 43689 9 V. Description of the invention (3) The dummy load 3 is connected. The repeater 2 enables the microwave source 1 to radiate forward energy and allow the reflected wave energy to enter the dummy load 3. The directional coupler 4 is connected to an outlet of the repeater 2 and can monitor the reflected microwave energy transmitted from the repeater 2. The phase and amplitude detector 1 4 is connected to the other outlet of the repeater 2, and the phase and amplitude detector 14 is connected to an automatic matching device 5. The phase and amplitude detector 1 4 is It is used to detect the phase and amplitude of the forward wave and the reflected wave, and send the information to the automatic matcher 5, which can adjust the line impedance to automatically match to reduce the reflected wave. The radio wave mode converter 6 is connected to the outlet of the automatic matching device 5 and converts a rectangular linear wave transmitted from the matching device 5 into a circular linear wave. The gyrator 7 is elliptical and is connected to the radio mode converter 6 Below, the linear TE 1 1 mode electromagnetic wave transmitted from the radio mode converter 6 is converted into a TE 1 1 mode electromagnetic wave having a right-handedness. The 500 0 microwave resonance cavity 8 is a circular cavity located below the gyro 7 to store and control the energy of the electromagnetic field emitted by the microwave. The microwave antenna 9 is located at the bottom of the microwave resonance cavity 8 and can control the energy of the microwave input plasma cavity, and also has the function of impedance matching in the microwave circuit. The microwave window 10 is a pure quartz glass, which is located below the microwave antenna 9. The diameter of the pure quartz glass is 5000; the thickness is 32 κηη. It is necessary to avoid the heat collection problem caused by microwave reflection. It is used to isolate the vacuum reaction chamber from the Atmospheric interface.

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43689 9 V. Description of the invention ¢ 4) 8 7 3 Gaussian magnetic field source 1 1 contains three sets of coils, each set of coils are respectively supplied with low voltage and high current DC power, and are set outside the plasma reaction chamber 12, The system generates a uniform planar magnetic field, which is in resonance with the transmitted microwave frequency (2.45 GHz), and the plasma reaction chamber 12 is provided below the microwave window 10, so that the resonance gas molecules are released into a plasma. 3500 The wafer fixing base 13 is provided in the plasma reaction chamber 12 and the wafer can be placed thereon, and the generated plasma can be used to etch the wafer surface. A vacuum connection chamber 15 is provided below the plasma reaction chamber 12 and communicates with the inside of the plasma reaction chamber 12; a molecular turbopump group 16 is connected to the vacuum connection chamber 15 and the molecular turbopump group 1 Series 6 extracts the gas in the plasma reaction chamber 12 to keep the plasma reaction chamber 12 in a vacuum state. A cooling fan 17 is provided above the radio mode converter 6 to cool the heat collected by the quartz microwave window 10. This allows the high frequency rotation of electrons in a magnetic field (873 Gauss) to interact with a right-handed circularly polarized electromagnetic field (2.45 GHz) to generate resonance. If this resonance occurs in a vacuum pressure vessel (plasma reaction chamber) Body 12), the gas molecules in the container will be released into a plasma, and the surface of the wafer can be #etched. In summary, through the present invention, by adopting different geometric shapes and coupling methods, an ECR plasma machine system suitable for large-area wafer processing is designed to be used by the semiconductor industry. It is a rare invention patenter

43689 9 V. Description of the invention ¢ 5) · It is in full compliance with the patent application requirements. Therefore, if you file an application in accordance with the Patent Law, please check and approve the case in order to protect the rights and interests of the inventor. Thank you for your instructions. According to the above, it is only one of the best specific embodiments of the present invention, but the structural features of the present invention are not limited to this. Anyone skilled in the art can easily think of changes or Modifications can be covered by the patent scope of this case.

Page 10 4 3β89 9 Brief Description of Drawings The first drawing is a system architecture diagram of the machine of the present invention. The second diagram is a schematic diagram generated by an electron cyclotron resonance plasma source. [Description of drawing number and name] 1 Microwave source 2 Repeater 3 Dummy load 4 Directional coupler 5 Automatic matcher 6 Radio mode converter 7 Rotator 8 5000 Microwave resonance cavity 9 Microwave antenna 1 0 Microwave window 1 1 8 7 3 Gauss magnetic field source 12 5000 Plasma reaction chamber 1 3 350 0 Wafer fixed base 1 4 Phase and amplitude detector 1 5 Vacuum connection chamber 1 6 Molecular turbopump 1 7 Cooling fan

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Claims (1)

436899 6. Scope of patent application1. A 3000-electron cyclotron resonance (ECR) plasma machine equipment, including: a microwave source generating 2. 45 GHz; a repeater connected to the microwave source outlet, and the repeater Connected to a dummy load, the looper advances the radiated energy of the microwave source and makes the reflected wave energy enter the dummy load; a directional coupler is connected to an exit of the looper to monitor the transmission from the looper Reflected microwave energy;-a phase and amplitude detector connected to the other exit of the repeater, and an outlet of the phase and amplitude detector connected to an automatic matcher, the phase and amplitude detector is used to detect Measure the phase and amplitude of the forward wave and the reflected wave, and send the information to the automatic quad coupler to automatically match the line impedance to reduce the reflected wave. An electric wave mode converter, connected to the exit of the automatic matcher, The rectangular linear wave transmitted is converted into a circular linear wave;-The gyrator, which is oval in shape, is connected below the radio mode converter and is a line to be transmitted from the radio mode converter Waves, converted into right-handed circularly polarized electromagnetic waves; a microwave resonance cavity, which is a circular cavity, located below the gyrator to store and control the energy of the electromagnetic field emitted by the microwave;-a microwave antenna set at the microwave resonance The bottom of the cavity can control the energy of the microwave input into the plasma cavity and has the function of impedance matching in the microwave circuit. A quartz microwave window is set under the microwave antenna to isolate the vacuum reaction and the interface between the atmosphere; Page 12 ^ 3 589 9 The scope of the patent application of the 6 'application is to generate a 873 Gaussian uniform planar magnetic field source, which contains three sets of coils, which are placed outside the plasma reaction chamber, and the magnetic field generated can resonate with the transmitted microwave frequency; A plasma reaction chamber is connected below the quartz microwave window to cause the resonance gas molecules to be freed to generate a plasma. A wafer fixing base for the generated plasma to etch the wafer is provided in the plasma reaction chamber. A vacuum connection chamber is provided below the plasma reaction chamber and communicates with the inside of the plasma reaction chamber; a molecular turbopump unit is connected to the vacuum connection chamber, and the molecular turbopump unit is extracted from the plasma reaction chamber The gas in the body keeps the plasma reaction chamber in a vacuum state; and a cooling fan is arranged above the electric wave mode converter to cool the heat collected by the quartz microwave window. Page 13