A7 B7 432460 567〇twf.doc/0〇8 五、發明說明u ) 本發明是有關於一種半導體製程’且特別是有關於 —種維持晶圓刻號（wafer mark)淸晰之方法。 習知晶圓投片生產時，會先在晶圓邊緣以雷射在晶圓 上形成多個凹洞，由這些直徑爲數個微米之凹洞排列成數 個數字以組成晶圓刻號(wafer mark)。晶圓刻號包括晶圓 代號（wafer 1¾、產品批號（lot mimber)或是產品型號等資 訊，以便在製程中辨識晶圓。 晶圓刻號對於要對每批數量眾多的晶圓進行產品追蹤 (process tracing)、良率分析（yield analysis)以及製程錯誤 分析(debugging)十分重要。因此，不論在製程中或是測試 過程中，皆需維持晶圓刻號淸晰可辨識，以提供正確的晶 圓資料。 由於晶圓刻號在晶圓一開始投片時，即已形成。而在 積體電路的製造過程中，每次曝光顯影時，都會將晶圓周 緣處的光阻去除之，方便卡盤(chuck)夾住晶圓以在不同機 台間傳送晶圓。上述去除晶圓周緣處光阻之步驟，通常稱 爲洗邊（wafer edge exposure, WEE)。 但於洗邊步驟之後，常常未能將晶圓周緣處之光阻完 全去除之，因此在對被光阻覆蓋之物質層進行蝕刻步驟 後，常常會有物質層殘留下來。則在經過多次的微影蝕刻 步驟後，晶圓刻號會被製程中各種殘留的物質層所覆蓋， 使晶圓刻號難以辨識，如第1A圖與第1B圖所示。 請參照第1A圖，第1A圓係爲依習知方式進行微影、 蝕刻步驟後，晶圓刻號區之放大照片。照片顯示出晶圓邊 3 本紙張尺度適用t國國家標準（CNS)A4規格（210 X 297公釐） ---Λ---------、υ裝·-------訂----1----線、 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印制农 A7 B7 432460A7 B7 432460 567twf.doc / 0〇8 5. Description of the invention u) The present invention relates to a semiconductor process' and, in particular, to a method for maintaining a clear wafer mark. In conventional wafer production, a plurality of cavities are formed on the wafer by laser at the edge of the wafer. The cavities with a diameter of several micrometers are arranged into a number to form a wafer mark. . Wafer engraving includes information such as wafer code (wafer 1¾, product lot number (lot mimber), or product model) to identify the wafer in the process. Wafer engraving is for product tracking of a large number of wafers per batch. (process tracing), yield analysis, and process error analysis are very important. Therefore, whether in the process or during the test, it is necessary to maintain the wafer engraving clearly and recognizably to provide the correct Wafer information. Because the wafer engraving number is formed when the wafer is first cast, and in the manufacturing process of the integrated circuit, the photoresist at the periphery of the wafer is removed every time the exposure is developed. It is convenient for the chuck to clamp the wafer to transfer the wafer between different machines. The above-mentioned step of removing the photoresist at the periphery of the wafer is usually referred to as wafer edge exposure (WEE). But after the wafer cleaning step Often, the photoresist at the periphery of the wafer cannot be completely removed, so after the etching step is performed on the material layer covered by the photoresist, the material layer often remains. After multiple lithographic etching steps, The wafer engraving will be covered by various residual material layers in the process, making the wafer engraving difficult to identify, as shown in Figures 1A and 1B. Please refer to Figure 1A, and the circle of 1A is known. After performing photolithography and etching steps, the photo of the engraved area of the wafer is enlarged. The photo shows that the wafer edge 3 paper size is applicable to the national standard (CNS) A4 specification (210 X 297 mm) --- Λ- -------- 、 υ equipment · -------- Order ---- 1 ---- line, (Please read the precautions on the back before filling this page) Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperative Printed Farm A7 B7 432460
567〇twf.doc/0〇S 五、發明說明（>) 緣覆蓋有許多殘餘之氧化物層，而且晶圓刻號十分不易辨 識。 請參照第1B圖，第1B圖係爲依習知方式進行微影、 蝕刻步驟後，將晶圓刻號進一步放大之照片。照片顯示出 晶圓刻號周圍殘留著許多氧化物，造成花紋來干擾晶圓刻 號之辨認。 本發明提供一種維持晶圓刻號淸晰之製造方法，使晶 圓刻號在多次微影蝕刻步驟後，仍能容易判讀之。 依照本發明第一較佳實施例，提供一晶圓，其次於該 晶圓上至少形成有金氧半電晶體、金屬內連線結構、絕緣 結構與晶圓刻號。最後形成圖案化之金屬層於晶圓上，使 其與金屬內連線結構電性連接，並同時可覆蓋晶圓刻號。 依照本發明第二較佳實施例，提供一晶圓，其次於該 晶圓上至少形成有金氧半電晶體、金屬內連線結構、絕緣 結構與晶圓刻號，適當的控制微影蝕刻步驟中殘留於光學 字元辨識讀取（OCR)區域的物質層厚度。 本發明提供一種維持晶圓刻號淸晰之製造方法，藉著 在晶圓刻號上沉積一層共形的金屬層作爲硬質的罩幕，將 微影蝕刻後殘留於晶圓刻號內的殘餘物質層遮蓋住或適當 的控制微影蝕刻步驟中殘留於光學字元辨識讀取區域的物 質層厚度，皆能獲得淸晰的晶圓刻號。依照本發明可確保 整批晶片都有淸晰的晶圓刻號。 依本發明之方法，形成一層不透明的物質層，覆蓋在 晶圓刻號上，其厚度需使晶圓刻號仍保有原來之拓樸形狀 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) )裝-丨--_ί丨訂----- ----線 經濟部智慧財產局員工消費合作社印製 B7 4 3 24 6 〇 567〇twf.doc/008 五、發明說明（> ) 或適當的控制殘留於光學字元辨識讀取區域的物質層厚 度，以減少其與晶片表面的階梯差異。如此，可使晶圓刻 號再度淸晰足以供辨認之。所以應用本發明至少具有可使 晶圓刻號淸晰再現之優點，以利依製程所需，對不同晶圓 施行不同之製程條件控制。 爲讓本發明之上述目的、特徵和優點能更明顯易懂， 下文特舉一較佳實施例，並配合所附圖式，作詳細說明如 下： 圖式之簡單說明： 第1A圖與第1B圖係爲經過依習知多次微影餓刻步驟 後之晶圓刻號區域的放大照片。 第2A - 2B圖係爲繪示根據本發明〜較佳實施例之維持 晶圓刻號淸晰的剖面示意圖。 第3圖係爲根據本發明一較佳實施例之維持晶圓刻號 淸晰之放大照片。 圖式標號之簡單說明： 100 :基底 102 :凹洞 104 :晶圓刻號區 106 :物質層 110 :金屬層 第一實施例 請參照第2A圖，提供一晶圜1〇〇，於晶圓1〇〇上至 少形成有金氧半電晶體（圖上未示出）、金屬內連線結構（圖 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝 ----- 訂---------i 經濟部智慧財產局員工消費合作社印製 A7 B7 432^6 0 567〇twf.doc/008 五、發明說明（6) 上未不出）、絕緣結構（圖上未示出）與晶圚刻號之凹洞丨〇2 於晶圓刻號區104。 ' 其中晶圓刻號的凹洞102是以雷射轟擊晶片表面而 得’每一晶圓刻號皆由許多凹洞102組成。而金氧半電晶 體、金屬內連線結構與絕緣結構’係爲熟悉此技藝之人所 熟知，因此不再贅述其製造流程。567〇twf.doc / 0〇S V. Description of the invention (>) The edge is covered with a lot of residual oxide layers, and the wafer marking is very difficult to identify. Please refer to FIG. 1B. FIG. 1B is a photograph in which the lithography of the wafer is further enlarged after performing the lithography and etching steps in a conventional manner. The photo shows that many oxides remain around the wafer engraving, causing patterns to interfere with the identification of the wafer engraving. The invention provides a manufacturing method for maintaining the clarity of a wafer engraving so that the wafer engraving can still be easily read after multiple lithographic etching steps. According to a first preferred embodiment of the present invention, a wafer is provided, and at least a metal-oxide semiconductor, a metal interconnect structure, an insulation structure, and a wafer engraving are formed on the wafer. Finally, a patterned metal layer is formed on the wafer, so that it is electrically connected to the metal interconnect structure, and at the same time, it can cover the wafer engraving. According to a second preferred embodiment of the present invention, a wafer is provided. Secondly, at least a metal-oxide semiconductor, a metal interconnect structure, an insulating structure and a wafer engraving are formed on the wafer, and the lithographic etching is appropriately controlled. The thickness of the material layer remaining in the OCR region in the step. The invention provides a manufacturing method for maintaining the clarity of a wafer engraving. By depositing a conformal metal layer on the wafer engraving as a hard mask, the residue remaining in the wafer engraving after lithography is etched. Covering the material layer or appropriately controlling the thickness of the material layer remaining in the optical character recognition reading area in the lithography etching step can obtain a clear wafer engraving number. According to the present invention, it is ensured that the entire batch of wafers has a clear wafer engraving number. According to the method of the present invention, an opaque material layer is formed and covered on the wafer engraving marks, and the thickness is such that the wafer engraving marks still retain the original topographical shape. 4 The paper size is applicable to the Chinese National Standard (CNS) A4 specification ( 210 X 297 mm) (Please read the precautions on the back before filling out this page)) Pack-丨 --_ ί 丨 Order ----- ---- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs B7 4 3 24 6 〇567〇twf.doc / 008 5. Description of the invention (>) or appropriate control of the thickness of the material layer remaining in the optical character recognition reading area to reduce the step difference from the wafer surface. In this way, the wafer marking can be made clear again for identification. Therefore, the application of the present invention has at least the advantage that the wafer engraving can be clearly reproduced, so that different process conditions for different wafers can be controlled according to the needs of the process. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is exemplified below, and it is described in detail with the accompanying drawings as follows: Brief description of the drawings: FIG. 1A and FIG. 1B The picture is an enlarged photo of the engraved area of the wafer after multiple lithography steps. Figures 2A-2B are schematic cross-sectional views showing that the scribe marks on the wafer are maintained in accordance with the preferred embodiments of the present invention. FIG. 3 is an enlarged photograph of maintaining the clarity of the scribe marks on the wafer according to a preferred embodiment of the present invention. Brief description of the drawing numbers: 100: substrate 102: recess 104: wafer engraved area 106: material layer 110: metal layer For the first embodiment, please refer to FIG. 2A, and provide a crystal wafer 100 on the wafer. There are at least metal oxide semiconductors (not shown in the figure) and metal interconnect structure (Figure 5) This paper is in accordance with China National Standard (CNS) A4 (210 X 297 mm) (please first (Please read the notes on the back and fill in this page.) Packing ----- Order --------- i Printed by A7 B7 432 ^ 6 0 567〇twf.doc / 008 V. Description of the invention (not shown in (6)), the insulating structure (not shown in the figure) and the recess of the crystal mark etched in the wafer etched area 104. 'Where the cavity 102 of the wafer engraving is obtained by bombarding the surface of the wafer with a laser', each wafer engraving is composed of a plurality of depressions 102. The metal-oxide semiconductor, metal interconnect structure and insulation structure are well known to those skilled in the art, so the manufacturing process will not be described again.
經過金氧半電晶體、金屬內連線結構與絕緣結構的整 個製程之後，雖然在歷次微影蝕刻步驟有執行洗邊的動 作，但是晶圓刻號區104之基底1〇〇上與凹洞102中仍會 殘留有物質層106。其中物質層106係爲多層殘留的材質 所組成，所以其有可能是各種介電材料與導電材料之複合 層D 請參照第2B圖，在晶圓100上形成金屬層110，再 進行微影蝕刻步驟，將其圖案化’並使其與金屬內連線結 構彼此電性連接。但是這一次微影蝕刻步驟不進行洗邊的 動作，所以晶圓刻號區1〇4也會被此層金屬層110所覆蓋。 而金屬層110可以爲製程中之任一層金屬層，或晏最後一 層要形成銲墊用之金屬層，而其材質例如可爲銅、鋁或其 他適用之金屬材料。 因爲凹洞1〇2的直徑一般皆爲數微米長，而一般製程 所用之金屬層之厚度不會大於1微米’所以凹洞102並不 會被塡平，可保有凹洞102的原有拓樸特徵。所以當此層 金屬層110覆蓋於晶圓刻號區104上之後，一方面因爲金 屬之不透光特性，另一方面因爲其會使晶圓刻號® 104之 6 _____- (請先閱讀背面之注意事項再填窵本頁) 裝--------訂 --------, 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用令國國家標準（CNS)A4規格（MO X 2叩公釐） Α7 Β7 4 3 24 6 Ο 5670twf.doc/008 五、發明說明（（r) 晶圓100表面較爲平滑，因此可獲得淸晰可辨之晶圓刻號， 如第3圖所示，第3圖上顯示有淸楚的晶圓刻號「2」字。 (請先閱讀背面之注意事項再填寫本頁) 第二實施例 請參照第2A圖，晶圓刻號區丨〇4之基底10〇上與凹 洞102中仍會殘留有物質層丨〇6。其中物質層係爲多 層殘留的材質所組成，所以其有可能是各種介電材料與導 電材料之複合層。 適當的控制微影蝕刻步驟中殘留於光學字元辨識讀取 區域的物質層106厚度，使其與晶片表面的階梯差異減少， 因而防止了光的干擾現象，如此即可維持晶圓刻號淸晰。 依照本發明之較佳實施例’維持晶圓刻號淸晰之製造 方法係藉著在晶圓刻號上沉積一層共形的金屬層，將殘留 於晶圓刻號內的導電物質和介電物質覆蓋住，而獲得淸晰 的晶圓刻號。但在製程發生變化的情形下，金屬層可能會 發生剝落現象，因此適當的控制殘留於光學字元辨識讀取 區域的物質層厚度，使其與晶片表面的階梯差異減少，因 而防止了光的干擾現象，如此即可維持晶圓刻號淸晰。 經濟部智慧財產局員工消費合作社印製 依據本發明的二個實施例皆可輕易辨識各個不同的晶 圓，以利依各晶圓之不同狀況來準確控制生產條件、做各 種不同晶圓測試與檢修之工作，例如可正確地利用雷射來 修復損壞的記憶體產品。 雖然上述之第一實施例是以金屬層來舉例，但是其他 不透光之材質也可適用於此。只要將一層不透光材質，以 適當的厚度覆蓋於晶圓刻號區上，不要將晶圓刻號的凹洞 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐〉 d324-S〇 A7 _5670twfd〇c/008________________* 五、發明說明（匕） 塡滿，就可以使晶圓刻號再度清晰可辨。 所以利用本發明，至少具有可使晶圓刻號再度淸晰可 辨之優點，以利製程中可以針對不同晶圓，依不同需求’ 來進行不同的製程條件控制。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍內，當可作各種之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者爲準。 (請先閱讀背面之注意事項再填寫本¾)After the entire process of the metal-oxide semiconductor, metal interconnect structure and insulation structure, although the edge etch operation has been performed in the previous lithographic etching steps, the substrate 100 in the engraved area 104 of the wafer has recesses. A substance layer 106 remains in 102. The material layer 106 is composed of a plurality of residual materials, so it may be a composite layer D of various dielectric materials and conductive materials. Please refer to FIG. 2B. A metal layer 110 is formed on the wafer 100 and then lithographic etching is performed. Step of patterning it and electrically connecting it with the metal interconnect structure. However, this time the lithography etching step does not perform the edge washing operation, so the wafer engraved area 104 will also be covered by this metal layer 110. The metal layer 110 may be any metal layer in the manufacturing process, or the last metal layer to be used for forming a pad, and the material may be copper, aluminum, or other applicable metal materials. Because the diameter of the cavity 102 is generally several micrometers long, and the thickness of the metal layer used in the general process will not be greater than 1 micron ', the cavity 102 will not be flattened, and the original extension of the cavity 102 can be maintained. Park features. Therefore, after this metal layer 110 is covered on the wafer engraved area 104, on the one hand, it is because of the opacity of the metal, and on the other hand, it will make the wafer engraved ® 104-6 _____- (Please read the back first Note for refilling this page) Packing -------- Order --------, Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, this paper is applicable to national standards (CNS) A4 Specifications (MO X 2 叩 mm) Α7 Β7 4 3 24 6 〇 5670twf.doc / 008 V. Description of the invention ((r) The surface of wafer 100 is relatively smooth, so a clear and recognizable wafer engraving number can be obtained. As shown in Figure 3, there is a clear wafer engraved number "2" on Figure 3. (Please read the precautions on the back before filling this page) For the second embodiment, please refer to Figure 2A, wafer A material layer still remains on the substrate 100 in the engraved area 〇〇4 and in the cavity 102. The material layer is composed of multiple layers of residual materials, so it may be a variety of dielectric materials and conductive materials The thickness of the material layer 106 remaining in the optical character recognition read area in the lithography etching step is appropriately controlled so that The step difference on the surface is reduced, so that the interference phenomenon of light is prevented, so that the wafer marking can be maintained clearly. According to a preferred embodiment of the present invention, the manufacturing method of maintaining the wafer marking is clear on the wafer A conformal metal layer is deposited on the scribe mark, and the conductive and dielectric substances remaining in the scribe mark of the wafer are covered to obtain a clear wafer scribe mark. However, the metal layer is changed when the process changes. Peeling may occur, so the thickness of the material layer remaining in the optical character recognition read area is appropriately controlled to reduce the step difference from the wafer surface, thus preventing light interference, so that the wafer engraving can be maintained Clear. The consumer cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs can easily identify different wafers according to the two embodiments of the present invention, so as to accurately control the production conditions and make different crystals according to the different conditions of each wafer. The circle test and repair work can, for example, correctly use lasers to repair damaged memory products. Although the first embodiment described above uses a metal layer as an example, Other opaque materials can also be used here. As long as a layer of opaque material is used to cover the engraved area of the wafer with an appropriate thickness, do not dent the engraved areas of the wafer. 7 This paper size applies to Chinese national standards (CNS) A4 specification (210 X 297 mm) d324-S〇A7 _5670twfd〇c / 008 ________________ * 5. Description of the invention (dagger) When full, the wafer engraving can be clearly identified again. So using the present invention, At least it has the advantage of making the engraving of the wafer clear again, so that different process conditions can be controlled according to different needs according to different wafers in the manufacturing process. Although the present invention has been disclosed as above with preferred embodiments, However, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be regarded as the scope of the attached patent application. Defined shall prevail. (Please read the notes on the back before filling in this ¾)
經濟部智慧財產局員工消費合作社印製 δ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs δ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)