TW431944B - Methods and apparatus for the chemical mechanical planarization of electronic devices - Google Patents

Methods and apparatus for the chemical mechanical planarization of electronic devices Download PDF

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Publication number
TW431944B
TW431944B TW086108170A TW86108170A TW431944B TW 431944 B TW431944 B TW 431944B TW 086108170 A TW086108170 A TW 086108170A TW 86108170 A TW86108170 A TW 86108170A TW 431944 B TW431944 B TW 431944B
Authority
TW
Taiwan
Prior art keywords
pad
workpiece
sunshade
suction cup
methods
Prior art date
Application number
TW086108170A
Other languages
English (en)
Inventor
Clinton O Fruitman
Original Assignee
Speedfam Ipec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Speedfam Ipec Corp filed Critical Speedfam Ipec Corp
Application granted granted Critical
Publication of TW431944B publication Critical patent/TW431944B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Hooks, Suction Cups, And Attachment By Adhesive Means (AREA)

Description

M431944 使兩吸盤（4)的扣設方位提至與捲軸（丨）相等或略上端，而組成一 遮陽簾(5)。 當該遮陽簾（5)在作為吸附於汽車擒風玻璃或側窗（6)實施 〔如第七圖〕，是將覆設在捲軸（1)兩側罩（3)一端固定部件 其間切入的吸盤(4)施以吸附在預遮擋的擋風玻璃或側窗（6)上， 即可藉由直接扣入固定部件⑻内的吸盤⑷來使遮陽簾幕⑵上 端盡罝提到預賴部位的頂端〔如第七圖的h間距〕，而對遮陽 簾(5)末端的吸盤（21)貞彳觸在播風玻璃或㈣⑹下端，以 較佳的遮陽改善。 x 料創作設計的賴簾在作為吸瞻預設觀麵或側窗的 使用實施’是具有如下優點： 1.該配口吸盤切人的固定部件是與捲軸兩旁的側罩一體成护 =固機蝴加工例罩—細，喊效的減少開 2.該允許吸盤切人的峡部件是直接和捲軸 ， ^吸盤的設置方位具有_力左右均衡，利於遮陽簾幕：暢: 3.該雜簾在吸驗汽車#顺觀職時轉 部 6 M431944 【圖式簡單說明】 用遮陽簾的構件分解示意圖 =·習用遮陽簾的組體外觀立體圖 :::習用遮陽簾吸附在汽車擔風玻、 ί四圖·:本創作遮陽簾的鮮構件放大詳圖 圖本創作遮陽簾的構件分解示意圖 ，、圖纟創作遮陽簾的組體外觀立體圖
-璃上的示意圖 ★ — ®糊作遮陽簾⑽在汽車播風破璃上的示意圖 【主要元件符號說明】
〔習用〕 (10)捲軸 (30) 固定座 (302)夾持部 (40) 吸盤 (50)遮陽簾 〔本創作〕 (1)捲軸 (21、4)吸盤 (31) 固定部件 (41) 頸部 (6)擒風玻璃或側窗 (20)簾幕 (301 )C形支持部 (303)缺口 (401)頸部 (60)擋風玻璃或側窗 (2) 簾幕 (3) 側罩 (32)容納空間 (5)遮陽簾 M431944 公告本 tt m% :分請勿填寫） ※^匸分類：E〇GMM〇0“I) x申妹荦=明書格式、順序，請勿任意更動’※記號部 ※申明案唬.^ ※ Ia ‘ m ίο. 〇5 一、 新型名稱：（令文/英文） .遮陽簾 二、 中文新型摘要： 本創作是提供一種遮陽簾，是令枯太 薄κ目w ^躲疋3括麵附有簾幕的捲軸兩旁 覆3又的鮮端歧伸出—朗1 定：的靠外一侧為形成，朝下的 == 端的頸部能沿著容納空間切入固定部件， 兄干及皿 至與捲轴相等或略上端；作為遮陽簾在灿^吸^扣設方位提 窗時能將遮陽簾幕上端盡量提到預遮擋部、π車擋風玻璃或側 的遮陽改善，且細合吸盤切人的固定彳頂^，以獲有較佳 -體成形，而有效賴少開模㈣。D切模加工是和側罩 三、 英文新型摘要： M431944 六、申請專利範圍： 1. -種遮陽簾，是含括__有職長度簾幕的捲轴、在捲 旁為覆。x以側罩 '及作為吸附在預遮擔部位的兩吸盤所構成丨 八改良疋在.έ玄捲附有簾幕的捲轴兩旁覆設的側罩作用一端 是延伸出―_口朝下_定部件，及在®定部件的靠外-側為 形成-缺口朝下的容納空間，以允許吸盤—端的頸部能沿著容納 工門刀入件，*使吸盤的扣設方位提至與捲軸相等或略上 端；作為遮陽簾在韻於汽車賊玻贼㈣時祕遮陽簾幕上 端盡量提到職播雜_端，讀有較佳的遮陽改善，且該配 合吸盤切人的固定部件在開模加工是和側罩―體成形，而有效的 減少開模費用。 2. 如申請專·_ i餐述之遮陽簾，其巾該延伸在捲轴 兩旁該侧罩作用-端的斷部件—側的容納空間是呈内寬外窄交 置。 3. 如申請專種圍第1項職之猶簾，其巾該延伸在捲軸 兩旁該側罩與侧—端的固定部件絲強㈣娜—體成形。 M431944
M431944
M431944

Claims (1)

  1. M431944 寸
    944
    M431944 四、指定代表圖： (一） 本案指定代表圖為：第（五）圖。 (二） 本代表圖之元件符號簡單說明： (1)捲軸 （2)簾幕 (21、4)吸盤 (3)側罩 (31)固定部件 (32)容納空間 (41)頸部 (5)遮陽簾
TW086108170A 1996-06-14 1997-08-06 Methods and apparatus for the chemical mechanical planarization of electronic devices TW431944B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/662,678 US5769691A (en) 1996-06-14 1996-06-14 Methods and apparatus for the chemical mechanical planarization of electronic devices

Publications (1)

Publication Number Publication Date
TW431944B true TW431944B (en) 2001-05-01

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ID=24658724

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086108170A TW431944B (en) 1996-06-14 1997-08-06 Methods and apparatus for the chemical mechanical planarization of electronic devices

Country Status (7)

Country Link
US (2) US5769691A (zh)
JP (1) JPH11512978A (zh)
KR (1) KR20000016516A (zh)
DE (1) DE19781818T1 (zh)
GB (1) GB2329601B (zh)
TW (1) TW431944B (zh)
WO (1) WO1997047433A1 (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6069080A (en) * 1992-08-19 2000-05-30 Rodel Holdings, Inc. Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like
US6099954A (en) 1995-04-24 2000-08-08 Rodel Holdings, Inc. Polishing material and method of polishing a surface
US5769691A (en) * 1996-06-14 1998-06-23 Speedfam Corp Methods and apparatus for the chemical mechanical planarization of electronic devices
US6139402A (en) 1997-12-30 2000-10-31 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates
US6780095B1 (en) 1997-12-30 2004-08-24 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates
US6106662A (en) * 1998-06-08 2000-08-22 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6221775B1 (en) * 1998-09-24 2001-04-24 International Business Machines Corp. Combined chemical mechanical polishing and reactive ion etching process
AU1219600A (en) * 1998-10-21 2000-05-08 W.R. Grace & Co.-Conn. Slurries of abrasive inorganic oxide particles and method for adjusting the abrasiveness of the particles
TWI235115B (en) * 1998-10-26 2005-07-01 Scapa Group Plc Seamless, composite belts
US6390890B1 (en) 1999-02-06 2002-05-21 Charles J Molnar Finishing semiconductor wafers with a fixed abrasive finishing element
FR2785614B1 (fr) * 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
US6641463B1 (en) 1999-02-06 2003-11-04 Beaver Creek Concepts Inc Finishing components and elements
US6322425B1 (en) * 1999-07-30 2001-11-27 Corning Incorporated Colloidal polishing of fused silica
WO2001078116A2 (en) * 2000-04-11 2001-10-18 Cabot Microelectronics Corporation System for the preferential removal of silicon oxide
JP2002059356A (ja) * 2000-08-17 2002-02-26 Shin Etsu Handotai Co Ltd 半導体ウェーハの研磨方法
US6623355B2 (en) 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6350692B1 (en) * 2000-12-14 2002-02-26 Infineon Technologies Ag Increased polish removal rate of dielectric layers using fixed abrasive pads
US6863774B2 (en) * 2001-03-08 2005-03-08 Raytech Innovative Solutions, Inc. Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
US6852020B2 (en) * 2003-01-22 2005-02-08 Raytech Innovative Solutions, Inc. Polishing pad for use in chemical—mechanical planarization of semiconductor wafers and method of making same
US7037184B2 (en) * 2003-01-22 2006-05-02 Raytech Innovation Solutions, Llc Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
WO2004027840A2 (en) * 2002-09-18 2004-04-01 Memc Electronic Materials, Inc. Process for etching silicon wafers
US7449067B2 (en) * 2003-11-03 2008-11-11 International Business Machines Corporation Method and apparatus for filling vias
EP3352944B1 (en) 2015-09-25 2022-10-26 CMC Materials, Inc. Polyurethane cmp pads having a high modulus ratio

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048765A (en) * 1974-05-01 1977-09-20 The Manufacturers Brush Company Non-cellular polyurethane wheel in a process for finishing a metal workpiece
US4057939A (en) * 1975-12-05 1977-11-15 International Business Machines Corporation Silicon wafer polishing
DE3644854A1 (de) * 1985-07-31 1987-07-30 Speedfam Corp Werkstueckhalter
JPS6362673A (ja) * 1986-09-01 1988-03-18 Speedfam Co Ltd 定寸機構付き平面研磨装置
JPS6471661A (en) * 1987-09-09 1989-03-16 Showa Denko Kk Mirror polishing method for semiconductor wafer
DE68920365T2 (de) * 1988-06-28 1995-06-08 Mitsubishi Material Silicon Verfahren zur Polierung eines Halbleiter-Plättchens.
US5020283A (en) * 1990-01-22 1991-06-04 Micron Technology, Inc. Polishing pad with uniform abrasion
US5069002A (en) * 1991-04-17 1991-12-03 Micron Technology, Inc. Apparatus for endpoint detection during mechanical planarization of semiconductor wafers
US5329732A (en) * 1992-06-15 1994-07-19 Speedfam Corporation Wafer polishing method and apparatus
US5498199A (en) * 1992-06-15 1996-03-12 Speedfam Corporation Wafer polishing method and apparatus
MY114512A (en) * 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US5435772A (en) * 1993-04-30 1995-07-25 Motorola, Inc. Method of polishing a semiconductor substrate
US5486129A (en) * 1993-08-25 1996-01-23 Micron Technology, Inc. System and method for real-time control of semiconductor a wafer polishing, and a polishing head
US5489233A (en) * 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5534106A (en) * 1994-07-26 1996-07-09 Kabushiki Kaisha Toshiba Apparatus for processing semiconductor wafers
US5536202A (en) * 1994-07-27 1996-07-16 Texas Instruments Incorporated Semiconductor substrate conditioning head having a plurality of geometries formed in a surface thereof for pad conditioning during chemical-mechanical polish
EP0779655A3 (en) * 1995-12-14 1997-07-16 International Business Machines Corporation A method of chemically-mechanically polishing an electronic component
JPH1071661A (ja) * 1996-04-24 1998-03-17 Mitsui Petrochem Ind Ltd 防水材および防水層の施工方法
US5769691A (en) * 1996-06-14 1998-06-23 Speedfam Corp Methods and apparatus for the chemical mechanical planarization of electronic devices

Also Published As

Publication number Publication date
WO1997047433A1 (en) 1997-12-18
GB2329601B (en) 2000-07-12
GB2329601A (en) 1999-03-31
US5769691A (en) 1998-06-23
GB2329601A8 (en) 1999-04-12
US7083501B1 (en) 2006-08-01
GB9827129D0 (en) 1999-02-03
KR20000016516A (ko) 2000-03-25
JPH11512978A (ja) 1999-11-09
DE19781818T1 (de) 1999-09-23

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