TW430987B - Manufacture method of DRAM capacitor - Google Patents
Manufacture method of DRAM capacitorInfo
- Publication number
- TW430987B TW430987B TW087113894A TW87113894A TW430987B TW 430987 B TW430987 B TW 430987B TW 087113894 A TW087113894 A TW 087113894A TW 87113894 A TW87113894 A TW 87113894A TW 430987 B TW430987 B TW 430987B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulated
- layer
- opening
- layers
- conduction
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 125000006850 spacer group Chemical group 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Semiconductor Memories (AREA)
Abstract
A manufacture method of DRAM capacitor is introduced. Provide a substrate on which is already formed gate, source/drain and sequentially covered with the first and second insulated layers. The first insulated layer is formed with a first opening to expose the source/drain area and the second insulated layer is formed with a second opening to expose the first opening. Then make a conduction layer on the second insulated layer to fill in the first opening and touch the source/drain area and fill substantially in the second opening. Form the third insulated layer to cover the conduction layer and fill in the second opening. Remove a part of the third insulated and conduction layers till exposing the second insulated layer. Then remove a part of the second and third insulated layers such that a certain thickness is kept on the first insulated layer and partial sidewall of the conduction layer is exposed. Form a conductive spacer on the exposed sidewall of the conduction layer and then remove the second and third insulated layers to expose the surface of bottom electrode of the capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087113894A TW430987B (en) | 1998-08-24 | 1998-08-24 | Manufacture method of DRAM capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087113894A TW430987B (en) | 1998-08-24 | 1998-08-24 | Manufacture method of DRAM capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW430987B true TW430987B (en) | 2001-04-21 |
Family
ID=21631118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087113894A TW430987B (en) | 1998-08-24 | 1998-08-24 | Manufacture method of DRAM capacitor |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW430987B (en) |
-
1998
- 1998-08-24 TW TW087113894A patent/TW430987B/en active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent |