TW430948B - Manufacturing method of flat inter-metal dielectric or inter-layer dielectric - Google Patents

Manufacturing method of flat inter-metal dielectric or inter-layer dielectric

Info

Publication number
TW430948B
TW430948B TW87117113A TW87117113A TW430948B TW 430948 B TW430948 B TW 430948B TW 87117113 A TW87117113 A TW 87117113A TW 87117113 A TW87117113 A TW 87117113A TW 430948 B TW430948 B TW 430948B
Authority
TW
Taiwan
Prior art keywords
dielectric
inter
layer
forming
metal
Prior art date
Application number
TW87117113A
Other languages
English (en)
Inventor
Ching-Fu Lin
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Application granted granted Critical
Publication of TW430948B publication Critical patent/TW430948B/zh

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW87117113A 1998-09-17 1998-10-15 Manufacturing method of flat inter-metal dielectric or inter-layer dielectric TW430948B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15299598A 1998-09-17 1998-09-17

Publications (1)

Publication Number Publication Date
TW430948B true TW430948B (en) 2001-04-21

Family

ID=22545352

Family Applications (1)

Application Number Title Priority Date Filing Date
TW87117113A TW430948B (en) 1998-09-17 1998-10-15 Manufacturing method of flat inter-metal dielectric or inter-layer dielectric

Country Status (1)

Country Link
TW (1) TW430948B (zh)

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Legal Events

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