TW429678B - MOS transistor output circuit - Google Patents
MOS transistor output circuitInfo
- Publication number
- TW429678B TW429678B TW088119936A TW88119936A TW429678B TW 429678 B TW429678 B TW 429678B TW 088119936 A TW088119936 A TW 088119936A TW 88119936 A TW88119936 A TW 88119936A TW 429678 B TW429678 B TW 429678B
- Authority
- TW
- Taiwan
- Prior art keywords
- signal
- mos transistor
- channel mos
- output signal
- output circuit
- Prior art date
Links
- 230000000630 rising effect Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
- H03K17/164—Soft switching using parallel switching arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34575798A JP3248103B2 (ja) | 1998-12-04 | 1998-12-04 | Mosトランジスタ出力回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW429678B true TW429678B (en) | 2001-04-11 |
Family
ID=18378777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW088119936A TW429678B (en) | 1998-12-04 | 1999-11-16 | MOS transistor output circuit |
Country Status (5)
Country | Link |
---|---|
US (1) | US6351149B1 (zh) |
EP (1) | EP1006656A3 (zh) |
JP (1) | JP3248103B2 (zh) |
KR (1) | KR100323792B1 (zh) |
TW (1) | TW429678B (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1318881B1 (it) * | 2000-09-19 | 2003-09-10 | St Microelectronics Srl | Circuito di pilotaggio ad alta efficienza per carichi capacitivi. |
US6396301B1 (en) * | 2001-01-19 | 2002-05-28 | Dell Products L.P. | Ground bounce prediction methodology and use of same in data error reduction |
DE10142679A1 (de) * | 2001-08-31 | 2003-04-03 | Infineon Technologies Ag | Treiberschaltung |
US6509765B1 (en) * | 2001-11-20 | 2003-01-21 | Sun Microsystems, Inc. | Selectable resistor and/or driver for an integrated circuit with a linear resistance |
FR2838888B1 (fr) * | 2002-04-22 | 2005-07-29 | St Microelectronics Sa | Procede de controle de l'impedance d'un dispositif semiconducteur d'amplification de sortie, et dispositif amplificateur de sortie correspondant |
TW580787B (en) * | 2003-03-14 | 2004-03-21 | Novatek Microelectronics Corp | Slew rate enhancement device and slew rate enhancement method |
KR100541653B1 (ko) * | 2003-10-16 | 2006-01-10 | 삼성전자주식회사 | 반도체 장치의 신호 송수신 방법 |
US7071747B1 (en) * | 2004-06-15 | 2006-07-04 | Transmeta Corporation | Inverting zipper repeater circuit |
US7271626B1 (en) | 2004-10-27 | 2007-09-18 | National Semiconductor Corporation | Suppression of parasitic ringing at the output of a switched capacitor DC/DC converter |
KR100666177B1 (ko) * | 2005-09-30 | 2007-01-09 | 삼성전자주식회사 | 모드 레지스터 셋트를 이용하여 초기강화 드라이버의 임피던스 및 강도를 제어하는 출력 드라이버 |
JP2007274422A (ja) * | 2006-03-31 | 2007-10-18 | Oki Electric Ind Co Ltd | 駆動回路 |
US7710153B1 (en) * | 2006-06-30 | 2010-05-04 | Masleid Robert P | Cross point switch |
US7895560B2 (en) * | 2006-10-02 | 2011-02-22 | William Stuart Lovell | Continuous flow instant logic binary circuitry actively structured by code-generated pass transistor interconnects |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5122690A (en) * | 1990-10-16 | 1992-06-16 | General Electric Company | Interface circuits including driver circuits with switching noise reduction |
JPH06318710A (ja) | 1992-12-14 | 1994-11-15 | Nkk Corp | 不揮発性半導体記憶装置及びその製造方法 |
US5528166A (en) * | 1995-03-14 | 1996-06-18 | Intel Corporation | Pulse controlled impedance compensated output buffer |
KR0179786B1 (ko) * | 1995-12-23 | 1999-04-01 | 문정환 | 출력버퍼 |
JPH11355120A (ja) * | 1998-06-03 | 1999-12-24 | Mitsubishi Electric Corp | 半導体集積回路装置 |
-
1998
- 1998-12-04 JP JP34575798A patent/JP3248103B2/ja not_active Expired - Fee Related
-
1999
- 1999-11-16 TW TW088119936A patent/TW429678B/zh active
- 1999-11-29 EP EP99123704A patent/EP1006656A3/en not_active Withdrawn
- 1999-12-01 KR KR1019990054100A patent/KR100323792B1/ko not_active IP Right Cessation
- 1999-12-03 US US09/454,118 patent/US6351149B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6351149B1 (en) | 2002-02-26 |
JP2000174606A (ja) | 2000-06-23 |
EP1006656A3 (en) | 2003-11-12 |
JP3248103B2 (ja) | 2002-01-21 |
KR100323792B1 (ko) | 2002-02-19 |
KR20000047812A (ko) | 2000-07-25 |
EP1006656A2 (en) | 2000-06-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent |