TW429623B - EEPROM structure with metal electrode plate coupling capacitor - Google Patents
EEPROM structure with metal electrode plate coupling capacitorInfo
- Publication number
- TW429623B TW429623B TW88114061A TW88114061A TW429623B TW 429623 B TW429623 B TW 429623B TW 88114061 A TW88114061 A TW 88114061A TW 88114061 A TW88114061 A TW 88114061A TW 429623 B TW429623 B TW 429623B
- Authority
- TW
- Taiwan
- Prior art keywords
- oxide layer
- coupling capacitor
- tunneling
- electrode plate
- region
- Prior art date
Links
Landscapes
- Non-Volatile Memory (AREA)
Abstract
This invention provides a kind of EEPROM structure with metal electrode plate coupling capacitor that includes the following parts: a semiconductor substrate, which has a pair of isolation regions used to define active region on the substrate; an impurity doped region in semiconductor substrate, which is used as charge tunneling region and is next to one of the isolation regions. The first oxide layer is formed on semiconductor substrate, in which a tunneling contact hole is formed inside the first oxide layer. A polysilicon floating-gate that is on top of the first oxide layer is connected with the tunneling region through the tunneling oxide layer and is used to define a pair of source/drain regions on the active region. The second oxide layer is used to cover polysilicon floating-gate and the rest part of the first oxide layer. An MIM coupling capacitor is formed on the second oxide layer and in the third oxide layer. A dielectric layer is used to connect the bottom capacitor metal layer of MIM with the polysilicon floating gate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88114061A TW429623B (en) | 1999-08-17 | 1999-08-17 | EEPROM structure with metal electrode plate coupling capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88114061A TW429623B (en) | 1999-08-17 | 1999-08-17 | EEPROM structure with metal electrode plate coupling capacitor |
Publications (1)
Publication Number | Publication Date |
---|---|
TW429623B true TW429623B (en) | 2001-04-11 |
Family
ID=21641947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW88114061A TW429623B (en) | 1999-08-17 | 1999-08-17 | EEPROM structure with metal electrode plate coupling capacitor |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW429623B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102881692A (en) * | 2011-07-12 | 2013-01-16 | 剑桥硅无线电有限公司 | Single poly non-volatile memory cells |
-
1999
- 1999-08-17 TW TW88114061A patent/TW429623B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102881692A (en) * | 2011-07-12 | 2013-01-16 | 剑桥硅无线电有限公司 | Single poly non-volatile memory cells |
CN102881692B (en) * | 2011-07-12 | 2016-11-02 | 高通技术国际有限公司 | Non-volatile memory cell |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6833584B2 (en) | Trench power semiconductor | |
US5162890A (en) | Stacked capacitor with sidewall insulation | |
US8581324B2 (en) | Area-efficient electrically erasable programmable memory cell | |
US5889301A (en) | Semiconductor memory device having an E-shaped storage node | |
TW373290B (en) | Memory cell having a vertical transistor and a trench capacitor | |
EP1017095A3 (en) | DRAM trench capacitor cell | |
TW429613B (en) | Dynamic random access memory with trench type capacitor | |
EP1003219A3 (en) | DRAM with stacked capacitor and buried word line | |
SG173381A1 (en) | Capacitorless one transistor dram cell, integrated circuitry comprising an array of capacitorless one transistor dram cells, and methods of forming lines of capacitorless one transistor dram cells | |
JP3272979B2 (en) | Semiconductor device | |
TWI268601B (en) | Semiconductor device and its manufacturing method increasing the active area of capacitor without increasing the substrate area | |
JPS60189964A (en) | Semiconductor memory | |
US20060145249A1 (en) | LDMOS transistor | |
TW429623B (en) | EEPROM structure with metal electrode plate coupling capacitor | |
US20220384596A1 (en) | Semi-Floating Gate Device | |
KR960012495A (en) | Switching Transistors and Capacitors for Memory Cells | |
TW359878B (en) | Structure of stacked gate memory cell and production process therefor | |
KR20190087052A (en) | Semiconductor device formed on a SOI substrate | |
KR900007233B1 (en) | Semiconductor device | |
KR960015525B1 (en) | Method for manufacturing semiconductor device | |
JPS6358959A (en) | Field-effect type semiconductor device with capacitor | |
US4809051A (en) | Vertical punch-through cell | |
KR100557645B1 (en) | Capacitor of Semiconductor Device and Formation Method thereof | |
CN113517352A (en) | Manufacturing method of semi-floating gate device | |
JPH04318964A (en) | Semiconductor device and manufacture thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MK4A | Expiration of patent term of an invention patent |