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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW87111748ApriorityCriticalpatent/TW429552B/en
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Publication of TW429552BpublicationCriticalpatent/TW429552B/en
A manufacturing method of an ETOX cell is disclosed. It uses a self-aligned contact etching process. Cap layer and spacer are used as an etching buffer layer to protect the gate till the source being exposed. Then, use a conductive layer to connect the discrete sources to form the common source of ETOX cell.
TW87111748A1998-07-181998-07-18Manufacturing method of ETOX cell
TW429552B
(en)