TW428319B - High-density contactless flash memory on silicon above an insulator and its manufacturing method - Google Patents
High-density contactless flash memory on silicon above an insulator and its manufacturing methodInfo
- Publication number
- TW428319B TW428319B TW085106473A TW85106473A TW428319B TW 428319 B TW428319 B TW 428319B TW 085106473 A TW085106473 A TW 085106473A TW 85106473 A TW85106473 A TW 85106473A TW 428319 B TW428319 B TW 428319B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulator
- flash memory
- drain
- source
- body line
- Prior art date
Links
- 239000012212 insulator Substances 0.000 title abstract 4
- 229910052710 silicon Inorganic materials 0.000 title abstract 4
- 239000010703 silicon Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW085106473A TW428319B (en) | 1996-05-31 | 1996-05-31 | High-density contactless flash memory on silicon above an insulator and its manufacturing method |
| US08/786,908 US5796142A (en) | 1996-05-31 | 1997-01-22 | SOI compact contactless flash memory cell |
| US08/789,202 US5885868A (en) | 1996-05-31 | 1997-01-24 | Process for fabricating SOI compact contactless flash memory cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW085106473A TW428319B (en) | 1996-05-31 | 1996-05-31 | High-density contactless flash memory on silicon above an insulator and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW428319B true TW428319B (en) | 2001-04-01 |
Family
ID=21625266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085106473A TW428319B (en) | 1996-05-31 | 1996-05-31 | High-density contactless flash memory on silicon above an insulator and its manufacturing method |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US5796142A (zh) |
| TW (1) | TW428319B (zh) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6252275B1 (en) * | 1999-01-07 | 2001-06-26 | International Business Machines Corporation | Silicon-on-insulator non-volatile random access memory device |
| US6162684A (en) * | 1999-03-11 | 2000-12-19 | Advanced Micro Devices, Inc. | Ammonia annealed and wet oxidized LPCVD oxide to replace ono films for high integrated flash memory devices |
| US6512263B1 (en) * | 2000-09-22 | 2003-01-28 | Sandisk Corporation | Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming |
| DE10127350C1 (de) * | 2001-06-06 | 2003-02-13 | Infineon Technologies Ag | Halbleiterstruktur mit vergrabenen Leiterbahnen sowie Verfahren zur elektrischen Kontaktierung der vergrabenen Leiterbahnen |
| US7042044B2 (en) * | 2004-02-18 | 2006-05-09 | Koucheng Wu | Nor-type channel-program channel-erase contactless flash memory on SOI |
| JP4284300B2 (ja) * | 2005-05-02 | 2009-06-24 | 株式会社東芝 | 半導体記憶装置 |
| KR100735929B1 (ko) * | 2005-06-11 | 2007-07-06 | 삼성전자주식회사 | 낸드형 플래시 메모리 어레이 및 그 동작 방법 |
| US9391079B2 (en) | 2007-11-29 | 2016-07-12 | Zeno Semiconductor, Inc. | Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making |
| US9601493B2 (en) | 2006-11-29 | 2017-03-21 | Zeno Semiconductor, Inc | Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making |
| US8514622B2 (en) | 2007-11-29 | 2013-08-20 | Zeno Semiconductor, Inc. | Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making |
| US8547756B2 (en) | 2010-10-04 | 2013-10-01 | Zeno Semiconductor, Inc. | Semiconductor memory device having an electrically floating body transistor |
| US10461084B2 (en) | 2010-03-02 | 2019-10-29 | Zeno Semiconductor, Inc. | Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making |
| US9922981B2 (en) | 2010-03-02 | 2018-03-20 | Zeno Semiconductor, Inc. | Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making |
| JP6286292B2 (ja) * | 2014-06-20 | 2018-02-28 | 株式会社フローディア | 不揮発性半導体記憶装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5075245A (en) * | 1990-08-03 | 1991-12-24 | Intel Corporation | Method for improving erase characteristics of buried bit line flash EPROM devices without using sacrificial oxide growth and removal steps |
| EP0528564A2 (en) * | 1991-08-20 | 1993-02-24 | National Semiconductor Corporation | Self-aligned stacked gate EPROM cell using tantalum oxide control gate dielectric |
| US5210047A (en) * | 1991-12-12 | 1993-05-11 | Woo Been Jon K | Process for fabricating a flash EPROM having reduced cell size |
| US5397726A (en) * | 1992-02-04 | 1995-03-14 | National Semiconductor Corporation | Segment-erasable flash EPROM |
| US5467305A (en) * | 1992-03-12 | 1995-11-14 | International Business Machines Corporation | Three-dimensional direct-write EEPROM arrays and fabrication methods |
| US5246874A (en) * | 1992-06-02 | 1993-09-21 | National Semiconductor Corporation | Method of making fast access AMG EPROM |
| US5364808A (en) * | 1994-02-07 | 1994-11-15 | United Micro Electronics Corporation | Method of making a buried bit line DRAM cell |
| US5494837A (en) * | 1994-09-27 | 1996-02-27 | Purdue Research Foundation | Method of forming semiconductor-on-insulator electronic devices by growing monocrystalline semiconducting regions from trench sidewalls |
| US5661060A (en) * | 1994-12-28 | 1997-08-26 | National Semiconductor Corporation | Method for forming field oxide regions |
-
1996
- 1996-05-31 TW TW085106473A patent/TW428319B/zh not_active IP Right Cessation
-
1997
- 1997-01-22 US US08/786,908 patent/US5796142A/en not_active Expired - Lifetime
- 1997-01-24 US US08/789,202 patent/US5885868A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5885868A (en) | 1999-03-23 |
| US5796142A (en) | 1998-08-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |