TW428240B - Structure and fabricating method of high voltage lateral drain metal oxide semiconductor - Google Patents
Structure and fabricating method of high voltage lateral drain metal oxide semiconductorInfo
- Publication number
- TW428240B TW428240B TW87111751A TW87111751A TW428240B TW 428240 B TW428240 B TW 428240B TW 87111751 A TW87111751 A TW 87111751A TW 87111751 A TW87111751 A TW 87111751A TW 428240 B TW428240 B TW 428240B
- Authority
- TW
- Taiwan
- Prior art keywords
- high voltage
- oxide semiconductor
- metal oxide
- electric field
- drift region
- Prior art date
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
In this invention, there are some metal plates or electric field screening conduction layers, which are connected to gate or gate conduction layer, on the field oxide region where the wiring at high voltage position on the drain terminal of high voltage lateral drain metal oxide semiconductor is made to reduce the electric field intensity. In addition, there is no drift region under the field oxide layer region where high voltage wiring passes and no crowing effects of electric field will occur at the boundary position between drift region and channel. In addition, there is no high voltage conduction wire crossing over the top of field oxide layer that has drift region below so that device can operate normally. Therefore, high voltage electric field intensity at the boundary position between drift region and channel can be decreased so as to increase the breakdown voltage of high voltage lateral drain metal oxide semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW87111751A TW428240B (en) | 1998-07-18 | 1998-07-18 | Structure and fabricating method of high voltage lateral drain metal oxide semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW87111751A TW428240B (en) | 1998-07-18 | 1998-07-18 | Structure and fabricating method of high voltage lateral drain metal oxide semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW428240B true TW428240B (en) | 2001-04-01 |
Family
ID=21630717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW87111751A TW428240B (en) | 1998-07-18 | 1998-07-18 | Structure and fabricating method of high voltage lateral drain metal oxide semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW428240B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI503892B (en) * | 2012-03-22 | 2015-10-11 | Richtek Technology Corp | High voltage device and manufacturing method thereof |
-
1998
- 1998-07-18 TW TW87111751A patent/TW428240B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI503892B (en) * | 2012-03-22 | 2015-10-11 | Richtek Technology Corp | High voltage device and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |