TW424272B - Post-CMP wet-HF cleaning station - Google Patents
Post-CMP wet-HF cleaning station Download PDFInfo
- Publication number
- TW424272B TW424272B TW88101929A TW88101929A TW424272B TW 424272 B TW424272 B TW 424272B TW 88101929 A TW88101929 A TW 88101929A TW 88101929 A TW88101929 A TW 88101929A TW 424272 B TW424272 B TW 424272B
- Authority
- TW
- Taiwan
- Prior art keywords
- workpiece
- container
- fluid
- cleaning
- item
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
Abstract
Description
4 2 427 2 __案號88101929 Μ年"曰π日 修正 五、發明說明(2) ' ' - 發明之技術範嘴 本發明一般係關於矽晶圓等半導體工件之清洗裳置。 更具體言之’本發明係關於一種方法,採用濕化學溶液^ 去表面污物,埋入之金屬性離子、鬆弛之氧化物、 = 力以及微細刮痕。 … 發明背景 本發明為本申請人於1 9 98年2月9曰提出美國專利 案09/020, 979號之部份接續申請β 從工件表面除去異物是半導體裝置製造中的關鍵要件 。有污物或異物存在會導致此等裝置的關鍵性故障或永久 性縮短壽命.。 在半導體裝置製造中’使用矽工件,稱為「晶圓」。 晶圓典型具有扁平的圓形碟狀型。先由矽錠塊切^晶^, 進行多次光罩、侵蝕、介電質和導體定著過程,在晶圓上 產生微電子結構和迴路’進行此等製程的晶圓表面,在製 程步驟之間典型上必須加以拋光或平整,以確保適當平坦 性,因此容許使用照相石版印刷法,在晶圓表面建造另外 介電質和金屬化層。 今已開發出化學機械平整(CMP)機,將矽晶圓表面拋 光或平整至製造積體電路組件等必要的平坦條件。C Μ Ρ法 和機器在技術上業已公知’並載於多項美國專利。其例包 含Arai等人的美國專利4,805,348號(1989年2月發證), Gill的美國專利4, 811,522號(1989年3月發證),Arai等 人的美國專利5,099,614號(1992年3月發證),Karlsrud4 2 427 2 __Case No. 88101929 Year M " π Day Amendment V. Description of the Invention (2) ''-Inventions of the Invention The present invention generally relates to the cleaning of semiconductor workpieces such as silicon wafers. More specifically, the present invention relates to a method that uses a wet chemical solution to remove surface dirt, buried metallic ions, relaxed oxides, force, and fine scratches. … Background of the Invention The present invention is a continuation of the US patent application No. 09/020, 979 filed by the applicant on February 9, 1998. The removal of foreign matter from the surface of a workpiece is a key element in the manufacture of semiconductor devices. The presence of dirt or foreign matter can cause critical failures or permanently shorten the life of these devices. The use of silicon workpieces in semiconductor device manufacturing is called "wafers." The wafer typically has a flat, circular dish type. First cut the silicon wafer from the silicon ingot, and perform multiple photomask, erosion, dielectric, and conductor fixation processes to generate microelectronic structures and circuits on the wafer. The wafer surface for these processes is processed in the process steps. The gaps must typically be polished or leveled to ensure proper flatness, thus allowing the use of photolithography to build additional dielectric and metallization layers on the wafer surface. Chemical mechanical leveling (CMP) machines have been developed to polish or flatten the surface of silicon wafers to the necessary flat conditions such as manufacturing integrated circuit components. The CMP method and machine are known in the art 'and are described in a number of U.S. patents. Examples include US Patent No. 4,805,348 by Arai et al. (Issued in February 1989), US Patent No. 4,811,522 by Gill (issued in March 1989), and US Patent No. 5,099,614 by Arai et al. No. (issued in March 1992), Karlsrud
第6頁 2000. 11.08. 006 4 2,427 2 _案號8幻0]929__约年f丨月ί〇日_修正 _ 五、發明說明(3) 等人的美國專利5, 329, 732號(1994年7月發證), Masayoshi等人的美國專利5, 476,890號(1995年12月發證 )’ Karl srud 等人的美國專利5, 498, 196 和5,498, 199 號( 均1 996年3月發證),以及Tali eh等人的美國專利 5, 558, 568 號(1 996 年 9 月發證)。 CMP加工典型上於晶圓在拋光墊片以機械方式拋光時 ’必須將抛光漿液5丨到晶圓表面。漿液典型上含有細磨粒 ’諸如氧化矽和氧化鋁,分散於鹼性或酸性媒質内,亦可 添加界面活性劑等化學清洗组成勿。因此,晶圓之CMP加 工會留下污物’諸如剩餘的漿液粒,不要的金屬性離子( 鈉,、鉀、鉄、鉻、鎳、錳、鋅、鈦等),以及晶圓表面上 的微刮痕。為除去此等表面污物’晶圓典型上在cMp後的 清洗機内清洗。 使用脫 亦可使 能,同 可除去 性離子 内可能 另 清洗晶 ,兼用 機械作 習用CMP後的清洗機内,晶圓利用一組件沖洗刷’ 離子(DI )水、氨、或各種其他化學溶液沖洗,晶圓 用超音波清洗法清洗,於此,工件可經高頻超音波 時浸於D I水或氫氧化銨内。雖然沖洗和超音波清洗 若干表面污物,但不能除去表面應力,植入的金屬 ,微刮痕,以及被晶圓的CMP加工損壞的氧化物層 含有的不良污物或瑕症。 ^ ^化氫(KF )等適當清洗液,可組合機械作用來 雖然清洗液可從晶圓除去若干受損的氧化物層 機械作用和侵蝕液可能引進次顯微的刮傷,從實施 用的所用機構,可能增加顆粒。另外,此項清洗法Page 6 2000. 11.08. 006 4 2,427 2 _Case No. 8 Magic 0] 929__ about a year f 丨 month _ 0 _ amendment _ V. Description of the invention (3) U.S. Patent No. 5,329,732, et al. ( (Issued in July 1994), Masayoshi et al. US Patent No. 5,476,890 (issued in December 1995) 'Karl srud et al. US Patent Nos. 5,498,196 and 5,498,199 (both 1,996) (Issued in March), and U.S. Patent No. 5,558,568 by Tali eh et al. (Issued in September 1996). CMP processing is typically performed on a wafer when the polishing pad is mechanically polished ′ a polishing slurry must be applied to the wafer surface. The slurry typically contains fine abrasive particles, such as silica and alumina, dispersed in an alkaline or acidic medium. Chemical cleaning components such as surfactants can also be added. Therefore, the CMP process of the wafer will leave dirt such as remaining slurry particles, unwanted metal ions (sodium, potassium, thallium, chromium, nickel, manganese, zinc, titanium, etc.), and the surface of the wafer. Micro scratches. To remove such surface contaminants, the wafer is typically cleaned in a cleaning machine after cMp. Deactivation can also be enabled, and the crystals can be cleaned in the same way as the removable ions. In the cleaning machine after CMP is also used for mechanical work, the wafer is washed with a component flushing brush 'ion (DI) water, ammonia, or various other chemical solutions. The wafer is cleaned by ultrasonic cleaning. Here, the workpiece can be immersed in DI water or ammonium hydroxide during high-frequency ultrasound. Although rinsing and ultrasonic cleaning of certain surface contaminants, they cannot remove surface stresses, implanted metals, micro-scratches, and undesirable contaminants or defects contained in the oxide layer damaged by the CMP process of the wafer. ^ ^ Proper cleaning fluids such as hydrogen hydride (KF) can be combined with mechanical action, although the cleaning fluid can remove a number of damaged oxide layers from the wafer. Mechanical action and erosion fluid may introduce submicroscopic scratches. The mechanism used may increase particles. In addition, this cleaning method
4 2^2 (2 乒、發明說明(3) 的進一步缺點是安全性和廢物遺棄的問題。 典型上,CMP平整和CMP後清洗是在單獨機器内進行。 俟晶圓在cmp平整機上平整後,晶圓即傳送到⑶?後清洗機 。傳送晶圓所需時間增加整體加工時間,並增加污物在晶 圓表面乾燥的可能性,為有助於防止污物在晶圓表面上乾 燥’晶圓是在濕環境内傳送,需要特殊處理和設備。工件 從一機移送到另一機,有增加晶圓破裂的另外缺點。4 2 ^ 2 (2 Ping-Pong, Invention Description (3) A further disadvantage is the issue of safety and waste disposal. Typically, CMP smoothing and post-CMP cleaning are performed in separate machines. 俟 Wafers are flattened on a cmp flattener After that, the wafer is transferred to the CD? Post-cleaner. The time required to transfer the wafer increases the overall processing time and increases the possibility of dirt drying on the wafer surface. 'Wafer is transported in a wet environment and requires special handling and equipment. Moving workpieces from one machine to another has the additional disadvantage of increasing wafer breakage.
Q CMP後清洗之後’可採用化學侵蝕清洗法,從晶圓除 去受損的氧化,物層。在習用化學侵蝕清洗法中,晶圓是垂 直彷傲HF溶液等化學溶液靜態液内。然而,此法有若干缺 點’例如重複清洗操作時,HF溶液逐漸降解,以致難以控 制從晶圓除去的氧化物層量。另外,在循環之旧溶液會在 ,圓,面又增加另外顆粒,晶圓放入HF溶液内時’表面蝻 著的氣泡亦可造成不均勻侵蝕晶圓。此外,氧化矽與HF反 應’會形成說化矽和水分子。氟化矽和水分子都會留在晶 圓表面和HF溶液間的界面,造成晶圓的低侵蝕率和不均勻 侵银。尤其是留在界面的水會將晶圓表面的HF濃度稀釋, 造成侵餘不均勻且侵蝕率較低。 典型上’晶圓的化學侵蚀清洗,是在為處理有害化學 品而,計的特別濕枱上進行。晶圓在CMP後清洗機内清洗 後’晶圓即移送到化學侵蝕清洗機。晶圓從一機移送到另 一機’又會增加總共處理時間,污物容易在晶圓表面乾燥 ,^有破裂之虞。所以,需要裝置從工件表面除去污物和 受知的氧化物層,以克服與現有習知方法相關的各種缺Q After CMP cleaning, a chemical attack cleaning method can be used to remove the damaged oxide and material layers from the wafer. In the conventional chemical etching cleaning method, the wafer is vertically in a static liquid such as a chemical solution such as HF solution. However, this method has several disadvantages. For example, when the cleaning operation is repeated, the HF solution is gradually degraded, making it difficult to control the amount of the oxide layer removed from the wafer. In addition, the old solution will circulate in the circle, and the surface will add additional particles. When the wafer is placed in the HF solution, bubbles trapped on the surface can also cause uneven erosion of the wafer. In addition, the reaction of silicon oxide with HF ’will form silicon dioxide and water molecules. Both silicon fluoride and water molecules remain at the interface between the wafer surface and the HF solution, resulting in a low erosion rate and uneven silver invasion on the wafer. In particular, the water remaining at the interface will dilute the HF concentration on the wafer surface, resulting in uneven backlash and a low erosion rate. Typically, the wafer's chemical attack cleaning is performed on a special wet bench for the treatment of hazardous chemicals. After the wafers are cleaned in a post-CMP washer, the wafer is moved to a chemical attack washer. Moving wafers from one machine to another will increase the total processing time, and dirt will easily dry on the wafer surface, which may cause cracks. Therefore, a device is needed to remove dirt and known oxide layers from the surface of the workpiece in order to overcome various shortcomings associated with existing conventional methods.
第8頁 4 2 4 2 7 2 ' ---- 五、發明說明(4) 點。 I明概要 ,/本發明係關於一種裝置,在CMp平整和CMP後清洗之後 t工件表面除去鬆弛氧化物、表面應力、金屬性離子、 /Ip ,和微細到痕。此舉係在工件經拋光和/或平整以及 後清洗之後’從工件表面除未受損氧化物層完成之。 按照本發明,工件係從前一處理站實質上按水 ^入化學侵•清洗站。1件從而以,f上水 =向 0 件容器内,於…件上下表面均暴露。其次 液排入容器内,,使工件浸入清洗液内。另夕卜, =Page 8 4 2 4 2 7 2 '---- 5. Description of the invention (4) point. The outline of the present invention relates to a device for removing loose oxides, surface stress, metallic ions, / Ip, and fine traces from the surface of a workpiece after CMP leveling and cleaning after CMP. This is done after the workpiece has been polished and / or flattened and post-cleaned 'by removing the undamaged oxide layer from the surface of the workpiece. According to the present invention, the workpiece is essentially pressed into the chemical infiltration and cleaning station from the previous processing station by water. 1 piece, so f water = into 0 pieces of container, exposed on the upper and lower surfaces of ... Next, the liquid is drained into the container, so that the workpiece is immersed in the cleaning liquid. Also, =
::各種表面移動。從工件表面除去適當氧化物層後,、J ^取出清洗液’#出淋洗液’從卫件表面淋洗清洗 最後’工件移送到另一處理站。 液。 _圖式簡單說明 本發明參照附圖說明如下,同嫌轳 ,其中: Π樣號碼一般指同樣元件:: Various surface movements. After the appropriate oxide layer is removed from the surface of the workpiece, J ^ remove the cleaning solution ’# 出 出 洗液’ rinse from the surface of the guard and finally ’the workpiece is transferred to another processing station. liquid. _Brief description of the drawings The present invention is described below with reference to the drawings, which are the same, where: Π-like numbers generally refer to the same elements
圖1為具有CMP後清洗站和化學侵蝕清洗站的積 機代表例俯視平面圖; 積體CMP 圖2為圖1所示機器採用的裴料/卸料站 站侧視圖; 份指標 圖3A為另一清洗機代表例之俯視平面圖· 圖3B為圖3A所示清洗機之侧視圖; ’ 圖4為圖3 A所示清洗站採用的水執之俯 圖5為圖4沿5-5線之水軌斷面圖; 十面圈; 424272 五、發明說明(5) 圖6為沖洗站之側視圖; 所示沖洗站之俯視平面圖; 二化學侵蝕清洗站之俯視平南圖; 沿9-9線的化學侵韻清洗站之斷面圖; 視平Ϊ圖所示化學侵蝕清洗站聯合水執的具體例之俯 圖10B為圖ί〇Α所不化學侵蝕清洗站聯合 之侧視 圖, 圖11Α為所示化學侵蝕清洗站聯合水軌的另一具體例 之俯視平面圖; 圖1 為圏11A所示化學侵蝕清洗站聯合水執之侧視 圖; 圖1 2 A為圖11A和圖丨丨B所示化學侵蝕清洗站内所用刀 緣架之侧視圖; 圖12B為圖12A所示刀緣架之俯視平面圖; 圖12C為圖12A所示刀緣架之背視圖; 圖1 3至圖1 5為化學侵蝕清洗站又一具體例之斷面圖; 圖1 6為化學侵蝕清洗站之透祝圖; 圖1 7為圖1所示清洗站所利用之旋乾站斷面圖。 .本發Jg較佳具體例之詳細說明 現參見圖1和圖2,表示積體化學機械平整(CMP)機100 代表例。此機1 0 0整合CMP站與CMP後清洗站和化學侵蝕清 洗站’用以減少全部處理時,污物在工件上乾燥 < 虞,以 及工件在不同機間傳送引起破裂之虞。此機100包括工件Figure 1 is a top plan view of a representative example of an integrated machine with a CMP cleaning station and a chemical erosion cleaning station; integrated CMP Figure 2 is a side view of the Pei material / unloading station station used by the machine shown in Figure 1; Top plan view of a representative example of a washing machine. Fig. 3B is a side view of the washing machine shown in Fig. 3A; 'Fig. 4 is a top view of a water heater used in the washing station shown in Fig. 3 A; Cross-section view of water rail; Ten-face ring; 424272 V. Description of the invention (5) Figure 6 is a side view of the flushing station; Top plan view of the flushing station shown; Top plan view of the second chemical erosion cleaning station; Along 9-9 A cross-sectional view of a chemical invasion cleaning station on the line; a top view of a specific example of a chemical erosion cleaning station combined with a water drill as shown in the plan view. FIG. 10B is a side view of the combination of a chemical erosion cleaning station not shown in FIG. 11 and FIG. 11A. Top plan view of another specific example of the combined water rail of the chemical erosion cleaning station shown in Figure 1; Figure 1 is a side view of the combined water anchor of the chemical erosion cleaning station shown in Figure 11A; Figure 1 A is shown in Figure 11A and Figures 丨 B A side view of a knife edge holder used in a chemical erosion cleaning station is shown; FIG. 12B is a side view of the knife edge holder shown in FIG. 12A Top plan view; Figure 12C is a rear view of the knife edge holder shown in Figure 12A; Figures 13 to 15 are cross-sectional views of another specific example of a chemical erosion cleaning station; and Figure 16 is a perspective view of a chemical erosion cleaning station ; Figure 17 is a sectional view of the spin-drying station used in the cleaning station shown in Figure 1. Detailed description of the preferred specific example of the present invention Jg Referring now to FIGS. 1 and 2, a representative example of a CMP machine 100 is shown. This machine integrates the CMP station with the CMP post-cleaning station and the chemical erosion cleaning station 'to reduce the risk of dirt drying on the workpiece during the whole process, and the risk of cracking caused by the workpiece being transported between different machines. This machine 100 includes the workpiece
第10寅 424272 五、發明說明(6) 裝料/卸料站200、指標站400、CMP站600和清洗站800。 0 機器人臂1 2 0把工件從裝料/卸料站2 0 0傳送到指標站 400。機器人臂120可從裝料/卸料站200把五片工件裝到指 標站400的指標枱410上。其次,多頭傳送總成420把載體 頭440移動到指標枱410附近,檢起五片工件(圖2)。傳送 總成420再側面移動入CMP站600和拋光枱61 0上方“傳送總 成420即下降,使五片工件緊壓拋光枱610。為增進拋光處 理,宜提供拋光漿液,而個別載體即轉動並徑向振盪越過 拋光表面。所用拋光漿液可例如為包括膠體氧化;5夕粒之水 質漿液。以此方式,工件表面即被拋光和/或平整。雖然 在上述具體例中,同時平整五片工件,但精於此道之士均 可很快明白一次可以拋光任何數量的工件,而不悖本發明 精神和範圍。CMP法的詳細說明可參見1997年9月10日提出 的美國專利申請案08/926, 700號,於此列入參玫。 不幸’工件兼用拋光漿液的塢械式拋光,會留下刮痕 ’拋光處理之後,工件上會留有漿液材料和其他污物,此 等污物和刮痕會導致由工件所製成裝置的故障或縮短使用 壽命。所以’工件是在清洗站&〇〇内清洗、侵姓和乾燥。 因此’肢臂460從指標站400提升工件,移到清洗站 800。清洗站800宜含有第一、第二、第三、第四水軌8 〇2 、803、804、806,沖洗站820、845,化學侵银清洗站850 和旋乾站890。 在本發明較佳具體例中,清洗站8 〇 〇内的各分站(沖洗 站820、845,化學侵蝕清洗站8 50,旋乾站89〇 ),一次處No. 10 Yin 424272 V. Description of the invention (6) Loading / unloading station 200, index station 400, CMP station 600, and cleaning station 800. 0 The robot arm 1 2 0 transfers the workpiece from the loading / unloading station 2 0 0 to the index station 400. The robot arm 120 can load five pieces of workpieces from the loading / unloading station 200 onto the index table 410 of the index station 400. Secondly, the multi-head transfer assembly 420 moves the carrier head 440 to the vicinity of the index table 410 and picks up five pieces of work (Fig. 2). The conveying assembly 420 is then moved sideways into the CMP station 600 and the polishing table 61. "The conveying assembly 420 is lowered, so that five pieces of workpiece are pressed against the polishing table 610. In order to improve the polishing process, a polishing slurry should be provided, and the individual carrier is rotated. And oscillate radially across the polishing surface. The polishing slurry used may be, for example, colloidal oxidation; water-based slurry of 5 grains. In this way, the surface of the workpiece is polished and / or flattened. Although in the above specific example, five pieces were flattened simultaneously Workpiece, but those skilled in the art can quickly understand that any number of workpieces can be polished at one time without departing from the spirit and scope of the present invention. A detailed description of the CMP method can be found in the US patent application filed on September 10, 1997 No. 08/926, 700, which is listed here. Unfortunately, 'the workpiece is polished by the docking-type polishing with polishing slurry, which will leave scratches.' After polishing, there will be slurry materials and other dirt on the workpiece. Dirt and scratches can cause failure or shorten the life of the device made of the workpiece. So 'the workpiece is cleaned, invaded, and dried in the washing station & 00. Therefore,' the limb 460 from the indicator station 400 lift the workpiece and move to the cleaning station 800. The cleaning station 800 should contain the first, second, third, and fourth water rails 802, 803, 804, 806, flushing stations 820, 845, and chemical invasion cleaning station 850 And spin-drying station 890. In the preferred embodiment of the present invention, each sub-station within the cleaning station 800 (rinsing stations 820, 845, chemical erosion cleaning station 8 50, spin-drying station 89), once
424272 五、發明說明(7) -- 理一個工件。因此’工件是裝在清洗站内的水軌⑽之上 ,並留在水軌802内,直到沖洗站82〇空出可接受次一工件 。更具體參見圖4和圖5,水軌8〇2包含分段銷808,以助維 持工件於水軌内。當沖洗站82〇空出要接受工件時,分段 銷8 08下降。朝前的流體喷嘴812提供爆發或穩定流動的流 體’而弯角流體噴口 814有助於促成工件到沖洗站820上。 以類似方式’水執8 〇 3可從沖洗站8 2 0移送工件到沖洗站 845 ’而水軌804連同水軌8〇6從沖洗站845移送工件到化學 侵蝕的清洗站8 5 0。424272 V. Description of Invention (7)-Manage a workpiece. Therefore, the workpiece is mounted on the water rail ⑽ in the cleaning station and remains in the water rail 802 until the washing station 820 is empty to accept the next workpiece. Referring more specifically to Figures 4 and 5, the water rail 802 includes segmented pins 808 to help maintain the workpiece within the water rail. When the flushing station 820 is vacated to accept the workpiece, the segment pin 8 08 is lowered. The forward-facing fluid nozzle 812 provides a bursting or steady-flowing fluid ' and the angled fluid nozzle 814 helps facilitate the workpiece onto the rinse station 820. In a similar manner, a 'water hold 80' can transfer workpieces from a washing station 8 2 0 to a washing station 845 'while a water rail 804 along with a water rail 806 moves workpieces from the washing station 845 to a chemically corrosive cleaning station 8 50.
水軌80 2、803、804、806亦含有複數流體喷口,把流 體向上拋射,支持工件,使工件和水軌間實質上消除機械 式接觸。使用水軌802、803、804、806在諸站間傳送工件 ,有保持工件潮濕的額外優點,因而防卓污物在工件表面 乾燥。在較佳具體例中,水軌802、803、804、806用來移 送工件的流體,包含脫離子水a 當沖洗站820空出時,水軌804把工件移到沖洗站820 ,如圖1所示。茲參見圖6和圖7,沖洗站820包含複數對滾 輪、底板821、頂板822、後板823、前板824。可用市售沖 洗站,諸如德國Wacker Cheratronic公司的製品。The water rails 80 2, 803, 804, and 806 also contain multiple fluid nozzles, which eject the fluid upwards to support the workpiece and substantially eliminate mechanical contact between the workpiece and the water rail. The use of water rails 802, 803, 804, and 806 to transfer workpieces between stations has the additional advantage of keeping the workpieces wet, so it prevents dirt from drying on the surface of the workpieces. In a preferred embodiment, the water rails 802, 803, 804, and 806 are used to transfer the fluid of the workpiece, including deionized water. When the washing station 820 is empty, the water rail 804 moves the workpiece to the washing station 820, as shown in Figure 1. As shown. 6 and 7, the washing station 820 includes a plurality of pairs of rollers, a bottom plate 821, a top plate 822, a rear plate 823, and a front plate 824. Commercially available washing stations are available, such as those manufactured by Wacker Cheratronic, Germany.
工件在工件輸入處825進入沖洗站820。複數對滾輪同 時清洗工件的頂面和底面,逼工件通過沖洗站820。底滾 輪(即滾輪826、828、830 '832、834)順時鐘方向轉動’ 如圖6所示。另外,各偶數對滚輪的頂滚輪(即滾輪829、 8 33 ),亦如圖6所示順時鐘方向轉動。最後,各奇數對滾The workpiece enters the washing station 820 at the workpiece input 825. A plurality of pairs of rollers simultaneously clean the top and bottom surfaces of the workpiece, forcing the workpiece through the washing station 820. The bottom rollers (ie, the rollers 826, 828, 830, 832, and 834) rotate clockwise 'as shown in FIG. In addition, the top rollers of each pair of rollers (ie, rollers 829, 8 33) also rotate clockwise as shown in FIG. 6. Finally, each odd pair rolls
第12頁 42427 2 五、發明說明(8) 輪的頂滾輪(即滾輪827、831、835)反時鐘方向轉動。因 此’奇數對滾輪(即滾輪826、827、830、831、834、835) 逼工件通過沖洗站820。偶數對滾輪(即滾輪828、829、 832、833)即在工件移動通過沖洗站820時,清洗其頂面和 底面。另外’毛刷可以逆向轉動,以維持晶圓在沖洗站 820内,直至水軌8〇4可以接受工件。Page 12 42427 2 V. Description of the invention (8) The top roller of the wheel (ie, the rollers 827, 831, 835) rotates counterclockwise. Therefore, the 'odd' pair of rollers (i.e., rollers 826, 827, 830, 831, 834, 835) force the workpiece through the washing station 820. The even-numbered pairs of rollers (ie, the rollers 828, 829, 832, 833) clean the top and bottom surfaces of the workpiece as it moves through the washing station 820. In addition, the brush can be rotated in the reverse direction to keep the wafer in the washing station 820 until the water rail 804 can accept the workpiece.
兹參見圖7 ’頂板8 22包括一或以上的流體進口,構成 分佈流體至沖洗站8 2 0内的分開部位或拿部。頂板8 2 2宜包 食許多岐管,配置成把流體輸送到沖洗站82〇内的特定位 置。具體而言’板8 2 2包括第一流體進口 836,與第—岐管 837相通,此第一岐管837構成把第一種流體分配到滚輪箱 内許多滚輪附近。第一岐管837宜設置成沿—或以上頂滚 輪的長度實質上平均釋放流體。頂板822又包括第二流體 進t? 838,同樣構成與第二岐管839相通’將第二雖流體分 配於遍及滾輪箱的不同部位,例如首先若干對滾輪^佔^ 域。頂板822又包括第三流體進口$4〇,與第三岐管Μ!相°° 通’構成分配第三種流體遍及滾輪箱的第三區,例如S 最後若干對滾輪之區域’頂板δ22亦可包含第四流體 842,與第四岐管843相填。Referring to Figure 7 ', the top plate 8 22 includes one or more fluid inlets, constituting a separate portion or holding portion that distributes fluid to the flushing station 8 2 0. The top plate 8 2 2 should contain many manifolds and be configured to deliver fluid to a specific location within the flushing station 82. Specifically, the 'plate 8 2 2 includes a first fluid inlet 836 communicating with the first manifold 837. This first manifold 837 constitutes a first fluid to be distributed near a plurality of rollers in the roller box. The first manifold 837 should preferably be arranged to release fluid substantially evenly along the length of the top roller. The top plate 822 also includes a second fluid inlet t? 838, which also constitutes communication with the second manifold 839 'to distribute the second fluid to different locations throughout the roller box, for example, firstly, a plurality of pairs of rollers ^ occupy a region. The top plate 822 also includes a third fluid inlet $ 40, which communicates with the third manifold M! To form a third region that distributes the third fluid throughout the roller box. For example, the area of the last pair of rollers of the S top plate δ22 may also be used. Contains a fourth fluid 842 and fills the fourth manifold 843.
各岐敢構成與其餘岐管不通流體。然而,一或以上请 體進口可聯結在一起,使單一流體可施加於一岐管以上: 在圖7具體例中’岐管構成分配清洗液至相鄰滾輪之 或之間(浪輪如圖7内虛線所示)。 _ 多種不同化學物類例如水、清洗漪 β π欣、界面活性劑、磨Each Qi dare constitutes no fluid communication with the rest of the manifold. However, one or more body inlets can be connected together so that a single fluid can be applied to more than one manifold: In the specific example of Figure 7, the 'manifold constitutes the distribution of cleaning liquid to or between adjacent rollers (the wave wheel is shown in the figure) 7). _ Many different chemical species such as water, cleaning β βππ, surfactants, abrasives
424272424272
擦減少劑、各種溶液之pH控制劑),可經偉於頂板822上的 岐管施加。個種流體進口可聯結在一起使不同化學物可 施加於滾輪箱的分別區域。以此方式,通過第一組滾輪的 工件可暴露於第一種化學溶液,並稍後暴露於在滚輪箱的 較後階段内之第二種化學溶液。例如,第一滾輪箱可蔣清 洗液和脫離子水混合物分配於工件上,以便利較重清洗, 而第二滚輪箱可僅將脫離子水分配到工件上,達成淋洗。 在較佳具體例中,工件利用水軌從沖洗站8移送 到冲洗站8 2 0 ^精於此道之士均知沖洗站8 4 5可免而將工Wipe reducer, pH control agent for various solutions), can be applied through the manifold on the top plate 822. Various fluid inlets can be coupled together so that different chemicals can be applied to separate areas of the roller box. In this way, the workpiece passing through the first set of rollers can be exposed to the first chemical solution and later to the second chemical solution in a later stage of the roller box. For example, the first roller box can distribute the cleaning liquid and deionized water mixture on the workpiece to facilitate heavy cleaning, while the second roller box can only distribute the deionized water to the workpiece to achieve leaching. In the preferred embodiment, the workpiece is transferred from the washing station 8 to the washing station 8 2 0 using water rails. Those skilled in this field know that the washing station 8 4 5 can avoid
件從沖洗站820直接移送到化學侵蝕清洙站85〇 ,並不悖本 發明的精神和範圍。The items are transferred directly from the flushing station 820 to the chemical erosion cleaning station 85, without departing from the spirit and scope of the present invention.
不响工件疋沖洗一次或二次,工件用脫離子水等化學 物沖洗無法除去到痕或其也表面瑕疵,或可能在工件上植 入刮痕或期間表面瑕疵内之污物。企圖更有效除去此等涔 物和到痕,可兼用耵和沖洗。然而,兼用HF和機械式沖洗 ,本身在=件表面會引起次微細刮痕,可能會捕集金屬離 子=其他/亏物。沖洗刷本身在侵蝕過獐中亦會引進顆_。 如前所述,工件表面的污物和刮痕會導致由工件所製造裴 置故障或永久性縮短使用壽命。因此,亟需從工件表面瞭 去此專污物和將刮痕弄光滑。 當化學侵蝕清洗站850空出時,水軌8〇4將工件從沖涑 站820傳送到化學侵蝕清洗站850,如圖1所示。特別參見 圖10A和圖10B ,畲化學侵儀清洗站空出可接受工件時 ,分段銷850即卞降。‘彎角流體喷口 853有助於逼使工件向Rinse the workpiece once or twice. Rinse the workpiece with chemicals such as deionized water, which cannot remove the marks or surface defects, or dirt that may be implanted in the scratches or surface defects on the workpiece. Attempts are made to remove these moths and marks more effectively, and moths and rinses may be used. However, the use of both HF and mechanical rinsing will cause sub-micro scratches on the surface of the piece, and may trap metal ions = other / defective. The washing brush itself will also introduce particles in the erosion process. As mentioned earlier, dirt and scratches on the surface of a workpiece can cause malfunctions or permanently shorten the service life of the workpiece. Therefore, it is urgent to remove the special dirt and smooth the scratches from the surface of the workpiece. When the chemical erosion cleaning station 850 is vacated, the water rail 804 transfers the workpiece from the flushing station 820 to the chemical erosion cleaning station 850, as shown in FIG. 1. With particular reference to Figs. 10A and 10B, the segmentation pin 850 is lowered when an acceptable workpiece is vacated by the radon chemical intrusion instrument cleaning station. ‘Angle fluid nozzle 853 helps force the workpiece
第14頁 424272 五、發明說明(ίο) 刖沿第一水執8 〇 4,到第二水軌8 0 6上。同理,彎角流體喷 口 854有助於逼俛工件沿第二水軌8 06向前進入工件容器 8 56 °在較佳具體例中’苐”水執8 04和第二水軌806以間 隙855分開’使得第一水軌8〇4内所用流體不會與第二水軌 8 06内所用流體混合。以此方式分開第一水軌8〇4和第二水 執巧6 ’有助於防止污物運動進入工件容器856内,減少工 件谷器856内所用化學物的稀釋,並防止工件容器g56内所 用化學物流入第一水軌8〇4内。 3 兹參見圖8和圖9,工件容器攻5 6宜包含開口852(圖16) ’可用作動閘總成866關閉。承受槽874在工件容器856下 f構成可以捕集從工件容器856溢流或漏出的流體。工件 容器856和承受槽874由具有機械強度並可耐化學物的適當 材料形成。在較佳具體例中,工件容器856和承受槽874是 由聚趟化材料’諸如商業化產品ULTEM形成。Page 14 424272 V. Description of the Invention (ί) 刖 along the first water track 804 to the second water track 806. Similarly, the angled fluid nozzle 854 helps to force the workpiece forward along the second water rail 8 06 into the workpiece container 8 56 °. In the preferred embodiment, the “苐” 水 执 8 04 and the second water rail 806 are separated by a gap. 855 'so that the fluid used in the first water rail 804 will not mix with the fluid used in the second water rail 8006. In this way, separating the first water rail 804 and the second water 6' helps Prevent dirt from entering the workpiece container 856, reduce the dilution of the chemicals used in the workpiece hopper 856, and prevent the chemicals used in the workpiece container g56 from flowing into the first water rail 804. 3 See Figures 8 and 9, The work container tap 56 should preferably include an opening 852 (Figure 16). It can be used as a shutter assembly 866 to close. The receiving groove 874 under the work container 856 f can trap fluid that overflows or leaks from the work container 856. The work container 856 and The receiving groove 874 is formed of a suitable material having mechanical strength and resistance to chemicals. In a preferred embodiment, the workpiece container 856 and the receiving groove 874 are formed of a polymer material such as a commercial product ULTEM.
繼續參見圖8和圖9,作動閛總成866宜包含堰868、連 桿870和作動器872。堪868連接至連桿87〇,從而接至作動 葬872 °在較佳具體例’作動器872為技術上公知的氣缸。 凡精於此道之士均知有其他各種作動器可用來作動堰868 當作動器8 7 2移動到第一位置,堰8 β 8即升到「關閉」位 置’如圖13所示。具體而言’堰86δ適切關閉工件容器856 内的開口 852 (圖16),容許工件容器856内充填流體。堰 868足夠大到使工件容器856可充填填體至其液位可使工件 足以浸入流體内。堰8 6 8亦可適當構成在流體流過工件容 器8 56時減少擾流。在較佳具體例中關閉時堰$即傾钭With continued reference to FIGS. 8 and 9, the actuating cymbal assembly 866 preferably includes a weir 868, a link 870, and an actuator 872. The 868 is connected to the connecting rod 87, and is thus connected to the actuator 872. In a preferred embodiment, the actuator 872 is a cylinder known in the art. Anyone skilled in this way knows that there are various other actuators that can be used to move the weir 868 as the actuator 8 7 2 to move to the first position, and the weir 8 β 8 is raised to the "closed" position 'as shown in FIG. 13. Specifically, the weir 86δ appropriately closes the opening 852 (FIG. 16) in the workpiece container 856, allowing the workpiece container 856 to be filled with fluid. The weir 868 is large enough that the workpiece container 856 can fill the filling body to its liquid level so that the workpiece is sufficiently immersed in the fluid. The weir 8 6 8 may also be appropriately configured to reduce turbulence when the fluid flows through the workpiece container 8 56. In the preferred embodiment, weirs are dumped when closed
4 2 42 7 2 五、發明說明(11) ,使流體溢流過堰8 6 8 ’進入承受糟8 7 4,由此減少流入工 件容器856内的流體發生擾流,如圖14所示。當作動器872 流至第一位置時’堪868降低至「’開啟」位置。如圖15所 示。吏具體而言’堰868適度移動離開工件容器8 56的開口 852(圖16),使流體可從工件容器856排放,容許機器人進 出傳送工件至下τ處理站。特別如圖15所示,機器人臂適 度構成以濕端作動器進入工件容器856,取出工件。4 2 42 7 2 V. Description of the invention (11), the fluid overflows through the weir 8 6 8 ′ and enters the receiving tank 8 7 4, thereby reducing the turbulence of the fluid flowing into the work container 856, as shown in FIG. 14. When the actuator 872 flows to the first position, the 'Kan 868' is lowered to the '' Open 'position. This is shown in Figure 15. Specifically, the weir 868 moves moderately away from the opening 852 (FIG. 16) of the workpiece container 8 56 so that fluid can be discharged from the workpiece container 856, allowing the robot to enter and exit to transfer the workpiece to the lower τ processing station. As shown in FIG. 15 in particular, the robot arm is appropriately configured to enter the workpiece container 856 with a wet-end actuator and take out the workpiece.
Q 在工件容g 856接受工件之前,作動閛總成866關閉, 方便工件容器8 5 6充填淋洗溶液。具體而言,流體口 8 6 0適 度構成分配諸如脫離子(DI)水等淋洗流體於工件容器856 内。因此’流體口 860與流體供應系統適度聯結。供應淋 洗流體至流體口的各種系紙,在技術上已屬公知。例如, 流體口 860可與附設於供應管的喷嘴聯結D供應管再與淋 洙液供應總線聯結。供應總線内雉持一定供應壓力,以便 供靡工件容器856内淋洗液均勻流動。來自總源的D I水經 過濾和泵送,供應至供應總線。另外,第一流體口 860構 成與分配氟化氫(HF)溶液的清洗液之第二流體口 862流體 截然分開。第二流體口 862類似第一流體口 860,與IJF供應 系統適度聯結。流體口 862可與附設於供應管的喷嘴聯結 。供應管從而與HF溶液供應總線聯結。程式規劃濃度的HF 利用精緻的混合器和耗用器供應至HF溶液供應總線。HF可 從總源供應至HF溶液供應總線,或將HF過濾並再循環。因 此,第一流體口 860與第二流體口 862隔離分配工件容器 856内之淋洗液。Q Before the workpiece volume g 856 accepts the workpiece, the actuator assembly 866 is closed to facilitate the workpiece container 8 5 6 to be filled with the eluent solution. Specifically, the fluid port 860 is configured to appropriately distribute eluent fluid such as deionized (DI) water into the workpiece container 856. Therefore, the 'fluid port 860 is moderately connected to the fluid supply system. Various tethered papers that supply the eluent fluid to the fluid ports are well known in the art. For example, the fluid port 860 may be connected to a nozzle attached to the supply pipe, and the D supply pipe may be connected to the eluent supply bus. A certain supply pressure is held in the supply bus so that the eluent in the workpiece container 856 flows evenly. The DI water from the main source is filtered and pumped to the supply bus. In addition, the first fluid port 860 constitutes a fluid which is completely separated from the second fluid port 862, which distributes a cleaning solution of a hydrogen fluoride (HF) solution. The second fluid port 862 is similar to the first fluid port 860 and is moderately connected to the IJF supply system. The fluid port 862 may be connected to a nozzle attached to the supply pipe. The supply pipe is thus connected to the HF solution supply bus. The programmed concentration of HF is supplied to the HF solution supply bus using a delicate mixer and consumer. HF can be supplied from the main source to the HF solution supply bus, or it can be filtered and recycled. Therefore, the first fluid port 860 is separated from the second fluid port 862 to distribute the eluent in the workpiece container 856.
第16頁 4 2 4 2 7 2 五、發明說明(12) 除第一流體口860外’流體分配岐管864亦分配工件容 器856内之淋洗流體。茲參見圖16,流體分配岐管864包含 複數喷嘴8 6 5a,以分配工件容器85 6内之淋洗流體。另外 ’複數喷嘴865a以實質上水平方式構成,以工件容器856 内實質上層流形態移動淋洗液。淋洗液以工件容器8 5 6内 實質上層流形態運動,有助於將工件從水軌8 〇 6逼入容器 856内。此外,喷嘴865a經適當構成,使其與構成分配清 洗液的喷嘴865b流體分開。因此,嗔嘴865a與喷嘴865b隔 離分配工件容器856内的琳洗液。流體分配岐管864亦以各 種構型構成於工件容器8 5 6内θ例如,流體分配岐管8 6 4可 與工件容器856 —體形成。另外,魂體分配岐管864可形成 附設於工件容器856、的管件或喷嘴。另外,流體可用技術 上公知的各糧流體供應系統供應至流體分配岐管864。例 如,喷嘴865a可以流體口 860的同樣方式構成供應淋洗 液。 茲參見圖1 0Α和圖1 〇Β,工件利用水軌8〇4移送到'水軌 8 06。水軌806逼使工件向前進入充填淋洗液的工件容器 85 6内。構埠在水軌8〇6上方的水軌8〇?,可用來協助逼使 工件進入工件容舞856内。工件以角度進入工件容器856内 的淋洗液令,由此減少附著於工件表面的氣泡亮。在工件 進入工件容器856内的淋洗液中時,工件與複數刀緣支持 體858接觸。具體而言,刀緣支持體858在接近工件進入工 件容器内之處適度彎肖’以助工件進入工件容器託6内 。淋洗液利用流體輸送岐管864在容器856内以實質上層流Page 16 4 2 4 2 7 2 V. Description of the invention (12) In addition to the first fluid port 860, the 'fluid distribution manifold 864 also distributes the rinse fluid in the workpiece container 856. 16, the fluid distribution manifold 864 includes a plurality of nozzles 8 6 5a to distribute the eluent fluid in the workpiece container 85 6. In addition, the plurality of nozzles 865a are formed in a substantially horizontal manner and move the eluent in a substantially laminar flow form in the workpiece container 856. The eluent moves in a substantially laminar flow shape within the workpiece container 8 56, which helps to force the workpiece from the water rail 806 into the container 856. In addition, the nozzle 865a is appropriately configured so as to be fluidly separated from the nozzle 865b constituting the cleaning liquid. Therefore, the nozzle 865a and the nozzle 865b separate and distribute the rinsing liquid in the work container 856. The fluid distribution manifold 864 is also formed in the workpiece container 8 5 6 in various configurations. For example, the fluid distribution manifold 8 6 4 may be formed integrally with the workpiece container 856. In addition, the soul distribution manifold 864 may form a pipe or a nozzle attached to the work container 856 ,. Alternatively, the fluid may be supplied to the fluid distribution manifold 864 using various grain fluid supply systems known in the art. For example, the nozzle 865a may be configured to supply eluent in the same manner as the fluid port 860. Referring to FIGS. 10A and 10B, the workpiece is transferred to the 'water rail 806 using the water rail 804. The water rail 806 forces the workpiece forward into the workpiece container 85 6 filled with the eluent. The water rail 800, which is located above the water rail 806, can be used to help force the workpiece into the workpiece Rongwu 856. The eluent of the workpiece enters the workpiece container 856 at an angle, thereby reducing the bright bubbles attached to the surface of the workpiece. When the workpiece enters the eluent in the workpiece container 856, the workpiece comes into contact with the plurality of blade edge supports 858. Specifically, the blade edge support 858 is moderately bent near the place where the workpiece enters the workpiece container to help the workpiece enter the workpiece container holder 6. The eluent is substantially laminar within the container 856 using a fluid delivery manifold 864
第17頁 424272 五、發明說明(13) ' -------- :態=,也有助於逼使工件沿力緣支持 外,在較佳具禮例中,刀緣支持體858是由諸n 品TEFLOW之聚四氟乙烯(f>TFE)材料劁士 ,^商業化產 緣支持體858間的摩擦。因此,工件机以;》工件和刀 工件和刀緣支持體858間最少接觸方J行。最:8,58 ’以 觸及刀緣支持體858的直立部859,再署私刀缺:’工个 a 冉置於刀緣支掊體 i持:Γ所示,因此’刀緣支持體858以實質上水平導向 支持工件,並實質上暴露工件的全部上下表面 茲參見圖UA和圖11B之本發明另一具體例,採用 的^7#,進入工件容器856時可停止工件向前運動。銷857 =構造使工件邊緣與銷857接觸,在工件進入工件容器856 二:止工件向前運動。同理’在工件容器856内的 利用流體輪送岐管M4設定運動時,可防止工件運動。 如圖12A、圖12B、圖12C所示’刀緣支持體8 與工件邊緣的點接觸,支持該工,,因此增加工 件暴路面積。另外,刀緣支持體858切角,以減少與工件 的面接觸。刀緣支持體858接近流體輸送岐管的末端 縮,當工件容器856内的流體利用流體輸送岐管864設定運 動時’可減少擾流。 建 晶圓存在察覺器大約構成檢測工件何時 =器856内。在一具體例内,使用志學察覺器。光射裝置 863裝在托架861上,而光受裝置(圖上未示)安在工件容 與光射裝置863呈直立對準。如圖UA所示,光射 裝63對準使工件大約位在工件容器856内時,透射至光Page 17 424272 V. Description of the invention (13) '--------: state = also helps to force the workpiece to support along the force edge. In a better courtesy, the blade edge support 858 is The friction between the Teflow polytetrafluoroethylene (f > TFE) material and the commercial production margin support 858. Therefore, the workpiece machine should be in line with the least contact between the workpiece and the knife edge support 858. Most: 8,58 'To reach the upright part 859 of the knife edge support 858, and then sign the private knife lack:' Gong a a is placed on the knife edge support body i holding: Γ shown, so 'blade edge support 858 The workpiece is supported with a substantially horizontal guide, and substantially all of the upper and lower surfaces of the workpiece are exposed. Referring to FIG. UA and FIG. 11B, another specific example of the present invention, ^ 7 # is used to stop the workpiece from moving forward when entering the workpiece container 856. Pin 857 = The structure makes the edge of the workpiece contact the pin 857, before the workpiece enters the workpiece container 856 Second: Stop the workpiece from moving forward. In the same way, when the movement is set by the fluid wheel feed manifold M4 in the work container 856, the work can be prevented from moving. As shown in FIG. 12A, FIG. 12B, and FIG. 12C, the blade edge support 8 is in point contact with the edge of the workpiece to support the work, thus increasing the area of the work path. In addition, the knife edge support 858 is chamfered to reduce surface contact with the workpiece. The blade edge support 858 is contracted near the end of the fluid transfer manifold. When the fluid in the workpiece container 856 is set to move using the fluid transfer manifold 864 ', turbulence can be reduced. The wafer presence detector is constructed to detect when the workpiece is inside the device 856. In a specific example, a zineology sensor is used. The light-emitting device 863 is mounted on the bracket 861, and the light-receiving device (not shown in the figure) is mounted on the workpiece and is aligned vertically with the light-emitting device 863. As shown in FIG. UA, when the light beam 63 is aligned so that the workpiece is approximately positioned in the workpiece container 856, it transmits light to the light.
4 2 4 2 7 2 五、發明說明(14) 受裝置的光束被打斷。凡精於此遒之士均知,各種檢測裝 置均可用。 參見圖8和圖9,當工件實質上水平位於工件容器856 内時,作動閘總成866開啟,從工件容器856排放淋洗液。 支持工件實質上水平,有助於維持工件表面的淋洗液膜, 因而防止污物在工件表面乾燥。因此,工件容器856和刀 緣支持體858定在適當水平,確保工件支持在實質上水平 導向。4 2 4 2 7 2 V. Description of the invention (14) The beam of the receiver is interrupted. Anyone skilled in this field knows that a variety of detection devices are available. Referring to FIGS. 8 and 9, when the workpiece is substantially horizontally located in the workpiece container 856, the actuating brake assembly 866 is opened, and the eluent is discharged from the workpiece container 856. Supporting the workpiece is essentially level, helping to maintain a film of eluent on the surface of the workpiece, thus preventing dirt from drying on the surface of the workpiece. Therefore, the workpiece container 856 and the blade edge support 858 are set at an appropriate level to ensure that the workpiece support is guided substantially horizontally.
一旦淋洗流體從工件容器856排出,作動閘總成&66關 閉,使工件容器856充填清洗液。具體而言,流體口 862適 當構成分配清洗液,諸如氟化氫(HF)溶液,於工件容器 856内,除流體口 862外,流體分配^岐管&64亦分配HF溶液 於工件容器856内。茲參見圖16,流體分佈岐管864構成複 數喷嘴&65b,喷嘴865b構成在工件容器856内以實質上層 流形態,實質上以水平方式移動HF溶液,尤其在接近工件 表面。因此,喷嘴8 6 5b構成在工件表面的上下方,使流體 以層流流過工件的上、下表面9在較佳具體例中,HF溶液 以層咸形態流過工件的上、下表面,再流過堰8 6 8 ’進入 承受槽874 ’如圖14所示。HF溶液流動時攪動HF溶液’使 HF溶液的新鮮部份與工件的各表面接觸,因而造成溶液的 更平均應用。此外’ HF溶液在工件容器856内減少再循環 ,確保HF溶液的新鮮部份與工件接觸。HF溶液的層流亦有 助於逐出可能附著於工件表面的氣泡,因而避兔侵蝕遍程 中的沖蝕效應〇另外,HF溶液的層流有助於從工件表面逐Once the eluent fluid is discharged from the work container 856, the brake assembly & 66 is closed, and the work container 856 is filled with the cleaning liquid. Specifically, the fluid port 862 suitably constitutes a dispensing cleaning liquid, such as a hydrogen fluoride (HF) solution, in the workpiece container 856. In addition to the fluid port 862, the fluid distribution manifold & 64 also dispenses the HF solution in the workpiece container 856. 16, the fluid distribution manifold 864 constitutes a plurality of nozzles & 65b, and the nozzle 865b is constituted to move the HF solution in a substantially laminar flow form in the workpiece container 856 in a substantially horizontal manner, especially near the surface of the workpiece. Therefore, the nozzles 8 6 5b are formed above and below the surface of the workpiece so that the fluid flows through the upper and lower surfaces of the workpiece in a laminar flow. In a preferred embodiment, the HF solution flows through the upper and lower surfaces of the workpiece in a laminar state. It then flows through the weir 8 6 8 'into the receiving groove 874' as shown in FIG. 14. Agitating the HF solution ' while the HF solution is flowing brings the fresh portion of the HF solution into contact with each surface of the workpiece, thereby resulting in a more even application of the solution. In addition, the HF solution is reduced in the workpiece container 856 to ensure that fresh parts of the HF solution are in contact with the workpiece. The laminar flow of the HF solution also helps to expel air bubbles that may adhere to the surface of the workpiece, thus avoiding the erosion effect in the course of rabbit erosion. In addition, the laminar flow of the HF solution helps to remove the air from the surface of the workpiece.
第19頁 424272 五、發明說明(15) 出氧化發和HF反應形成的氟化妙和水分子。在本發明脈絡 中’層流指HF溶液分層運動為特徵的流動。具體而言,層 流和湍流不同’在層流中的相鄰流體層並無顯微混合。 〇 在較隹具體例中’可用較低濃度的HF溶液。所用HF溶 液濃度可從25份水對1份HF至200份水對1份HF。使用較低 濃度的HF溶液有許多黌點。例如較低濃度的HF溶液造成侵 蝕率較慢,則肿溶液分散時間較多,以致侵蝕更均勻。侵 蝕率較慢亦提供工件與工件間處理時間誤差邊際較大,因 而增加工件與工件之均勻性。從工件表面淋洗較低濃度HF 所需時間少。另外’以低濃度酸作業比高濃度酸為安全, 因而所需有害化學物運送程序和裝置較少。然而,HF溶液 激度太你會造成系統内工件產量減少。在本發明最佳具體 例中’使用濃度為5 0份永對1份HF。Page 19 424272 V. Description of the invention (15) Fluoride and water molecules formed by the reaction of oxidation and HF. In the context of the present invention, 'laminar flow' refers to the flow characterized by the layered motion of the HF solution. Specifically, the laminar and turbulent flows are different 'and there is no micromixing of adjacent fluid layers in the laminar flow. 〇 In a more specific example, a lower concentration of HF solution may be used. The concentration of the HF solution used can range from 25 parts water to 1 part HF to 200 parts water to 1 part HF. There are many pips when using lower HF solutions. For example, the lower the concentration of HF solution is, the slower the erosion rate is, the longer the swelling solution disperses, so that the erosion is more uniform. The slower erosion rate also provides a larger margin of processing time error between the workpiece and the workpiece, thereby increasing the uniformity of the workpiece and the workpiece. It takes less time to rinse lower concentrations of HF from the surface of the workpiece. In addition, it is safer to work with a low-concentration acid than a high-concentration acid, and therefore requires fewer hazardous chemical transportation procedures and equipment. However, if the HF solution is too strong, you will reduce the workpiece production in the system. In the most preferred embodiment of the present invention ', a concentration of 50 parts per pair of HF is used.
工件浸於HF溶液内充分時間,以除去適當的氧化物層 。除去的氧化物暈在5〇-1 00A不等。HF從工件除去氧化物 ’(特別)是HF溶液濃度和溫度的函數。高濃度HF溶液造成 除去率較快。同理’ HF溶液溫度較高,造成除去率較快。 然而HF溶液溫度高會產生有害的jjF蒸氣。在本發明最佳具 體例中’工件是在周溫而濃度為5〇 札⑴抓的犯溶液内 f泡大約20秒’從工件表面除去大約5〇 a的氧化物,因而 從工件表面除去污物,使微刮痕平滑。 茲參見圖8和圖9,作動閘總成8 6 6開啟,從工件容器 8 5 6排放HF溶液。作動閘總成§ 6 6再關閉,容許工件容器Immerse the workpiece in the HF solution for a sufficient time to remove the appropriate oxide layer. The removed oxide halo ranged from 50-100A. HF removes oxides from the workpiece '(in particular) as a function of HF solution concentration and temperature. High concentration of HF solution results in faster removal rates. Similarly, the higher the temperature of the HF solution, the faster the removal rate. However, high temperature of HF solution will produce harmful jjF vapor. In the most preferred embodiment of the present invention, "the workpiece is bubbled in the solution at a temperature of 50 ° C and the concentration is about 20 seconds", and about 50a of oxide is removed from the surface of the workpiece, thus removing dirt from the surface of the workpiece. To smooth micro scratches. 8 and FIG. 9, the actuating brake assembly 8 6 6 is opened, and the HF solution is discharged from the workpiece container 8 5 6. Actuating brake assembly § 6 6 and then closing, allowing workpiece container
第20頁 42427 2 五、發明說明(16) 856充填淋洗流體。更具體而言,諸如脫離子(DI)水等淋 洗液,通過流體口 8 6 2分配於工件容器8 5 ο内。D j水亦經流 體分配岐管864内的複數喷嘴865a分配。另外,淋洗溶液 以實質上層流形態在工件容器856内運動,尤其是接近工 見表面,淋洗溶液在工件容器85β内以實質上層流形態運 動,藉從工件表面除去任何剩餘污物,而便於更徹底淋 洗。 一Page 20 42427 2 V. Description of the invention (16) 856 Fill the eluent fluid. More specifically, an eluent such as deionized (DI) water is dispensed into the work container 8 5 ο through the fluid port 8 6 2. Dj water is also distributed through a plurality of nozzles 865a in the fluid distribution manifold 864. In addition, the eluent solution moves in the workpiece container 856 in a substantially laminar flow form, especially close to the surface. The eluent solution moves in a substantially laminar flow form in the work container 85β, removing any remaining dirt from the surface of the work piece, and Facilitates more thorough rinsing. One
其次,作動閘總成8 6 6開啟,從工件容器85 6排放淋洗 溶液。然後’機器人1 2 0取回淋洗後的工件,從工件容器 8 56除去。工件從工件容器S56除去時,作動閘總成8 66關 閉’而工件容器8 5 6充填淋洗液,為下一晶圓準備,從工 件容器856取回淋洗過的工件後,機器人12〇即移送至旋乾 茲參見圓17,旋乾站890包含旋乾器892,封閉在罩或 遮板893限定之室892内。旋乾器892包含工件平台894,在 平台利用馬達8 95高速旋動時,可牢靠保持工件於其上。 宜=成貫穿平台894的複數減質量通孔,以減少旋&器392 質量,因而減少旋動周期的加速和減速時間。 複數夾持指桿896樞裝在平台8 94外周的周圍,Secondly, the operating brake assembly 8 6 6 is opened, and the eluent solution is discharged from the work container 85 6. The robot 12 then retrieves the rinsed workpiece and removes it from the workpiece container 8 56. When the workpiece is removed from the workpiece container S56, the brake assembly 8 66 is closed and the workpiece container 8 5 6 is filled with eluent to prepare for the next wafer. After the rinsed workpiece is retrieved from the workpiece container 856, the robot 12 That is, it is transferred to the spin dryer. Refer to circle 17, the spin dryer station 890 includes a spin dryer 892, which is enclosed in a room 892 defined by a cover or a shield 893. The spin dryer 892 includes a workpiece platform 894, which can firmly hold the workpiece on the platform when the platform is rotated at a high speed by a motor 895. It should be a plurality of mass reduction through-holes through the platform 894 to reduce the mass of the spinner 392, thereby reducing the acceleration and deceleration time of the spin cycle. A plurality of clamping fingers 896 are pivotally mounted around the periphery of the platform 8 94,
器人120夾持放在平台894上的工件邊緣。指捍包含在 平台894上方延伸並結合工件的頭部896a,以及在平么8 下方延伸的幹部896b ?夾持指桿896或至少與工 二 部份896a,係由Ertalyte等軟質柔性材料製成, 或到傷把持的工件。安裝在平台894下方的彈簧加載會柱貝塞; 4 2 4 2 7 2 五、發明說明(17) # "p896b ^ a ^ 於旋乾器m上的工件H6於爽持或固持位置。裝载 «私游系 的工件不直接置於平台8 94上,而是放在也 疋軟質柔性材料製成的支持銷898。 〇 梅安裝在平台894下方的作動器總成899,用來撬開夾持 才曰桿’釋放把持的工件如下。總成899可藉附設於氣缸9〇〇 而直立運動。當作動器總成899向上移動時,形成總成899 一部份的凸輪環901,即與夾持指桿896的幹部896b接觸, 幹部沿凸輪環9 01的凸輪表面滑動時,即被逼徑向朝内樞 動’從而造成頭部896 a徑向朝外樞動,以釋放工件,並提 供可裝工件的餘隙。 因此’在機器人1 2 0從化學侵蝕清洗站8 5 〇取回淋洗過 的工件後’即傳送土件到旋乾器89〇的平台894上,夾持指 桿896利用作動器總成899保持在開啟位置,直至工件已裝 入並適當定位。俟機器人120離開後,作動器總成899即降 低,脫離與幹部8〖6b的接觸’柱塞897又偏壓夾持指桿896 朝向關閉位置,以囪定工件供旋乾。平台894利用馬達895 最好在約1. 〇秒内加速至大約4, 000 rpm,在此速度旋動最 好約2 0秒,從工件表面除去全部水和其他顆粒,再最好約 1. 0秒内減速回到空轉狀態。 旋轉中’對把持在平台8 94上的工件施加離心力,把 水滴徑向朝外抽出工件表面外。為配合此乾燥步驟,可在 遮板8 9 3上方安裝空氣流動模組,以導釘強制空氣柱越過 工件上表面。The robot 120 holds an edge of a workpiece placed on the platform 894. The finger guard includes a head 896a that extends above the platform 894 and combines with the workpiece, and a stem 896b that extends below the flat surface 8. The clamping finger 896 or at least the second part 896a is made of soft and flexible materials such as Ertalyte , Or to the workpiece held by the injury. The spring-loaded assembly mounted below the platform 894 is a column-shaped plug; 4 2 4 2 7 2 V. Description of the invention (17) # " p896b ^ a ^ The workpiece H6 on the spin dryer m is in a holding or holding position. The workpiece for the «Private Touring System" is not placed directly on the platform 8 94, but on a support pin 898 made of soft flexible material. 〇 The actuator assembly 899 installed under the platform 894 is used to pry open the clamping lever and release the workpiece to be held as follows. The assembly 899 can be moved upright by being attached to the cylinder 900. When the actuator assembly 899 moves upward, the cam ring 901 forming part of the assembly 899 is in contact with the stem 896b of the clamping finger 896, and the stem is forced to slide when it slides along the cam surface of the cam ring 901. Pivoting inward 'causes the head 896a to pivot radially outward to release the workpiece and provide clearance for the workpiece. Therefore, 'after the robot 1 2 retrieves the rinsed workpiece from the chemical erosion cleaning station 8 5 0', that is, the soil piece is transferred to the platform 894 of the spin dryer 89, and the gripper 896 uses the actuator assembly 899 Keep in the open position until the workpiece is loaded and properly positioned.俟 After the robot 120 leaves, the actuator assembly 899 is lowered, and the contact with the cadre 8 6b is removed. The plunger 897 biases the clamping finger 896 toward the closed position, and fixes the workpiece for spin-drying. The platform 894 utilizes a motor 895 to accelerate to about 4,000 rpm in about 1.0 seconds, and preferably rotates at this speed for about 20 seconds to remove all water and other particles from the surface of the workpiece, and preferably about 1. Decelerate back to the idling state within 0 seconds. Rotating 'applies a centrifugal force to the workpiece held on the platform 8 94, and pulls water droplets radially outward from the surface of the workpiece. To cope with this drying step, an air flow module can be installed above the shutter 8 9 3 to force the air column over the upper surface of the workpiece with guide pins.
4 2 4 2 7 2 五、發明說明(18) 一旦乾燥完成,作動器總成899又向上運動’以結合 幹部896b,造成夾持指桿896運動至釋放位豊’一如上述 。總成δ99維持於此位置,直至乾燥工件已被機器人120取 回,並空出旋乾站890。機器人120在把乾工件送回到工件 原來的卡匣長孔内。 雖然本發明係就積體CMP機1 0 0加以說明,惟本發明亦 可用在分開的清洗機750,如圖3Α和圖3Β所示。茲參見圖 3Α和圖3Β,清洗站700宜含有第一、第二、第三、第四水 軌702、703,、704、706,沖洗站72 0、745,化學侵蝕清洗 站750和旋乾站790。與清洗站800 (圖1)相對地,在清洗站 750内,機器人120把工件移至清洗站700。工件按清洗站 8 0 0同樣方式沖洗,化學侵蝕清洗和旋乾。 雖然特定具體例,包含特定製法步驟、製法參變數、 溶液等已說明如上,但精於此道之士閱讀本内容町知對揭 示具體例有备種修飾。所以,須知該具體例僅對廣泛發明 舉例說明而非限制,故本發明不限於圖示和上述特定具體 例04 2 4 2 7 2 V. Description of the invention (18) Once the drying is completed, the actuator assembly 899 moves upwards again to combine with the stem 896b, causing the gripping finger 896 to move to the release position, as described above. The assembly δ99 is maintained at this position until the dried workpiece has been retrieved by the robot 120 and the spin dry station 890 is vacated. The robot 120 is returning the dry workpiece to the slot of the original cassette. Although the present invention has been described with reference to the integrated CMP machine 100, the present invention can also be applied to a separate washing machine 750, as shown in Figs. 3A and 3B. 3A and 3B, the cleaning station 700 should preferably include first, second, third, and fourth water rails 702, 703, 704, 706, flushing stations 72 0, 745, chemical erosion cleaning station 750, and spin-drying. Station 790. In contrast to the cleaning station 800 (FIG. 1), in the cleaning station 750, the robot 120 moves a workpiece to the cleaning station 700. The workpiece is rinsed in the same way as the cleaning station 800, chemically washed and spin-dried. Although specific specific examples, including specific manufacturing method steps, manufacturing method parameters, solutions, etc. have been described above, those who are skilled in reading this content will know that there are various modifications to the specific examples disclosed. Therefore, it should be noted that this specific example is merely an illustration of a wide range of inventions and is not a limitation, so the present invention is not limited to the illustrations and the above specific specific examples.
第23.頁 ΙΗΗΒΗPage 23. ΙΗΗΒΗ
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/058,647 US6125861A (en) | 1998-02-09 | 1998-04-10 | Post-CMP wet-HF cleaning station |
Publications (1)
Publication Number | Publication Date |
---|---|
TW424272B true TW424272B (en) | 2001-03-01 |
Family
ID=22018078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW88101929A TW424272B (en) | 1998-04-10 | 1999-02-09 | Post-CMP wet-HF cleaning station |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW424272B (en) |
WO (1) | WO1999053531A2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI406327B (en) * | 2008-12-31 | 2013-08-21 | Taiwan Semiconductor Mfg | Semiconductor wet process and system |
DE102013100040A1 (en) | 2013-01-03 | 2014-07-03 | E-Lead Electronic Co., Ltd. | Method for guiding reverse parking aid for motor car, involves computing park path for car by detector unit, and parking motor car on park surface based on overlapping of park path until mark of reverse park path expires completely |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5370741A (en) * | 1990-05-15 | 1994-12-06 | Semitool, Inc. | Dynamic semiconductor wafer processing using homogeneous chemical vapors |
JPH0521413A (en) * | 1991-07-10 | 1993-01-29 | Matsushita Electric Ind Co Ltd | Semiconductor substrate cleaner and semiconductor substrate cleaning method |
US5345639A (en) * | 1992-05-28 | 1994-09-13 | Tokyo Electron Limited | Device and method for scrubbing and cleaning substrate |
US5442828A (en) * | 1992-11-30 | 1995-08-22 | Ontrak Systems, Inc. | Double-sided wafer scrubber with a wet submersing silicon wafer indexer |
JP3341033B2 (en) * | 1993-06-22 | 2002-11-05 | 忠弘 大見 | Rotating chemical solution cleaning method and cleaning device |
US5885138A (en) * | 1993-09-21 | 1999-03-23 | Ebara Corporation | Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device |
JPH08187660A (en) * | 1994-12-28 | 1996-07-23 | Ebara Corp | Polishing device |
JP3080834B2 (en) * | 1994-03-30 | 2000-08-28 | 株式会社東芝 | Semiconductor substrate cleaning equipment |
US5609719A (en) * | 1994-11-03 | 1997-03-11 | Texas Instruments Incorporated | Method for performing chemical mechanical polish (CMP) of a wafer |
US5655954A (en) * | 1994-11-29 | 1997-08-12 | Toshiba Kikai Kabushiki Kaisha | Polishing apparatus |
EP1046433B1 (en) * | 1995-10-13 | 2004-01-02 | Lam Research Corporation | Method for removing contaminants by brushing |
TW387093B (en) * | 1996-07-08 | 2000-04-11 | Speedfam Ipec Corp | Methods and apparatus for cleaning, rinsing, and drying wafers |
-
1999
- 1999-02-08 WO PCT/US1999/002483 patent/WO1999053531A2/en active Search and Examination
- 1999-02-09 TW TW88101929A patent/TW424272B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI406327B (en) * | 2008-12-31 | 2013-08-21 | Taiwan Semiconductor Mfg | Semiconductor wet process and system |
DE102013100040A1 (en) | 2013-01-03 | 2014-07-03 | E-Lead Electronic Co., Ltd. | Method for guiding reverse parking aid for motor car, involves computing park path for car by detector unit, and parking motor car on park surface based on overlapping of park path until mark of reverse park path expires completely |
Also Published As
Publication number | Publication date |
---|---|
WO1999053531A2 (en) | 1999-10-21 |
WO1999053531A3 (en) | 2000-03-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6125861A (en) | Post-CMP wet-HF cleaning station | |
TW514999B (en) | Wafer cleaning apparatus and wafer cleaning method | |
JP3701126B2 (en) | Substrate cleaning method and polishing apparatus | |
KR101246838B1 (en) | Apparatus for electroless deposition of metals onto semiconductor substrates | |
US20070020918A1 (en) | Substrate processing method and substrate processing apparatus | |
JP2002200586A (en) | Holding device, treating device, and holding method for substrate | |
US6806193B2 (en) | CMP in-situ conditioning with pad and retaining ring clean | |
JPH1058314A (en) | Chemical-mechanical polishing device and method | |
JP2008534774A (en) | Apparatus for electroless deposition of metals on semiconductor substrates. | |
US20070224811A1 (en) | Substrate processing method and substrate processing apparatus | |
TW200300179A (en) | Substrate processing apparatus and method | |
JP2003502840A (en) | Method and system for cleaning a semiconductor wafer | |
JP2003197591A (en) | Substrate processing apparatus and method | |
KR101283307B1 (en) | Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and proximity substrate preparation sequence, and methods, apparatus, and systems for implementing the same | |
JP2006049757A (en) | Substrate processing method | |
JP4628623B2 (en) | Method for performing pre-treatment adjustment of a wafer cleaning system | |
TW424272B (en) | Post-CMP wet-HF cleaning station | |
US7878144B2 (en) | Electroless plating apparatus and electroless plating method | |
EP1459363B1 (en) | Method for post-etch and strip residue removal on coral films | |
JPH11354480A (en) | Wafer washing method and wafer washing device | |
US7067015B2 (en) | Modified clean chemistry and megasonic nozzle for removing backside CMP slurries | |
JP2003049280A (en) | Electroless plating solution and semiconductor device | |
US20100313443A1 (en) | Substrate proximity drying using in-situ local heating of substrate | |
KR102114567B1 (en) | Substrate processing method and substrate processing apparatus | |
JPH07283184A (en) | Processing device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |