TW418548B - Light emitting diode assembly having integrated electrostatic discharge protection - Google Patents

Light emitting diode assembly having integrated electrostatic discharge protection Download PDF

Info

Publication number
TW418548B
TW418548B TW088105388A TW88105388A TW418548B TW 418548 B TW418548 B TW 418548B TW 088105388 A TW088105388 A TW 088105388A TW 88105388 A TW88105388 A TW 88105388A TW 418548 B TW418548 B TW 418548B
Authority
TW
Taiwan
Prior art keywords
emitting diode
light
voltage
patent application
diode assembly
Prior art date
Application number
TW088105388A
Other languages
English (en)
Inventor
William K Antle
Michael K Lam
James W Stewart
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of TW418548B publication Critical patent/TW418548B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40—Details of LED load circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/20—Responsive to malfunctions or to light source life; for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Description

4 185 43 五、發明説明（i ) 由於體積微小之故，高可靠性及低消耗功率之發光二 極體（LED)已取代許多光學信號系統中之白熾燈泡，例如 汽車尾燈以及交通號誌燈等。然而，現有之LED會由於靜 電放電（ESD)而遭致損壞，ESD會導致採用LED之信號系 統的性能劣化，並降低其可靠度。為了避免LED遭致ESD 的破壞，在組裝光學信號系統時會採行某些保護措施》這 些保護措施提高系統的製造成本，因為它們涉及設備接地 作業，例如工作平_台、地板、組裝附件、工具以及處理LED 之人員的接地處理。此外，保護措施無法完全防止靜電電 位的形成，而此電位會引起EDS而損壞LED « 根據本發明之較佳實施例，發光二極體總成與電力分 路元件結合，該元件可對LED提供過電壓保護，並防止LED 由於靜電放電（EDS)而受損。該電力分路元件在LED總成 中與LED並聯，並轉移來自LED之電流，且在跨越LED之 電壓超過臨限電壓時將跨越LED之電壓限制於夾箝電位上 ，以保護LED。 第1圖為具有本發明之電力分路元件之發光二極體總 成之示意圖； 第2圖為本發明第一較佳實施例之發光二極艘總成之 截面圖； 第3圈為本發明第二較佳實施例之發光二極體總成之 截面圖。 第1圖為具有本發明較佳實施例之電力分路元件12之 發光二極體總成10 »電力分路元件12與發光二極體Η並聯 本紙張度適用中國國家標準（CNS } Α4規格（210X297公釐） I Γ—--------裝---- (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消费合作社印製 4 4Ί8548 A7 B7 五、發明説明（2 ) ’連接於發光二極體14之第一電氣接點15與第二電氣接點 17之間》當電氣接點之間的電壓v超過臨限電壓時，電力 分路裝置12,會將電壓V箝制於夾箝電壓並將電流Is由 LED 14導出’以限制LED 14之電力消耗。因此，電力分路 元件12可使LED14免於過載，例如，在不具備電力分路元 件12時由於會損壞LED之靜電放電（ESD)所形成之過載》 電力分路元件可由各種電壓箝位裝置構成，例如背對 背绂成的二極體16a、16b。當電壓夾箝裝置為稽納二極體 時，臨限電壓與夾箝電壓係為逆向偏壓之稽納二極體之一 的稽納電壓與順向偏壓與稽納二極體之一的順向導通電壓 加以決定。另一個例子為’背對背之二極體16a與16b為暫 態電壓消除（TVS)二極逋時，臨限電壓與夹箝電壓係由TVS 二極想之平衡（stand-off)電壓加以決定。 電力分路元件12之臨限電壓至少應相當於受保護之 LED14之最大操作電壓。例如’臨限電壓應至少當於led 14 之順向接面電壓，以利LED之正常操作。夾籍電壓必須要 小到可以限制LED 14中的電力消散•以便在所施加之電壓 V超過LED14之順向接面電壓時確保LED之可靠性。 第2圖為本發明第一較佳實施例之發光二極體總成丨〇a 之截面圖。LED14利用樹脂、焊接或其他方法附接於突出 於LED總成之封裝23之第一電極22a之第一安裝位置2U。 電力分路元件12附接於第一電極22a之第二安裝位置21b » 一對線接合片24a與24b、網孔接合片或其他連接裝置提供 LED 14之第一電氣‘接點15'電力分路元件12之第一接點12a 本纸張尺度適用t國國家橾準（CNS ) A4^ ( 210X297公釐） 1—：---^--.---裝，------訂-----^-I線 {請先閲讀背面之注意事項再填寫本頁) 經濟部智慧射產局員工消费合作社印製 4 185 48 A7 B7 五、發明説明（3 ) ~ 與第二電極22b之間的電氣連接·» LED14之第二電氣接點17 舆電力分路元件12之第二接點12b之間的電路係經由第一 電極22a構成。電力分路元件π將LED 14之第一電氣接點15 與第二電氣接點17之間的電壓V限制於夾箝電位，並在施 加之電壓V超過臨限電壓時將電流is由LED14導出。 第3圖為本發明第二較佳實施例之發光二極體總成1〇b 之截面圖。在第二較佳實施例中，電力分路元件安裝於由 LED總成l〇b之封農23突出之第一電極22a之安裝位置2U 。LED 14以倒裝焊接法附接於電力分路元件12之上表面， 使LED 14之第一電氣接點15與電力分路元件丨2之第一接點 12a電氣連接，並使LED14之第二電氣接點17與電力分路 元件12之第二接點12b電氣連接••第一電氣接點丨5與第一 接點12a由線接合片24a或其他連接裝置耦接至第一電極 22a»第二電氣接點17與第二接點12b由線接合片24b或其 他連接裝置耦接至第二電極22b。電力分路元件π將LED14 之第一電氣接點15與第二電氣接點17之間的電壓v限制於 夹箝電位，並在施加之電壓V超過臨限電壓時將電流13由 LED14導出。 僅管以上已就本發明較佳實施例作詳細說明，吾人應 瞭解，熟習此技藝之人士可在不棒離下列申請專利範圍之 範疇的前提下對本發明實施例作各種修改。 本紙張尺度逋用中國國家標準（CNS ) A4规格（210X297公釐） !|!丨I--.---裝-------訂------丨線 (請先閎讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 Λ 185 Ao a? Β7 五、發明説明（4 ) 元件標號對照 10…發光二極體總成 l〇b…發光二極體總成 12…電力分路元件 12a…第一接點 12b"_第二接點 14…發光二極體 15···第一接點 16a·*·二極體 16b…二極體 17…第二接點 21a…第一安裝位置 22a…第一電極 23…封裝 2 4 a…線接合片 24b…線接合片 —ίΊ-----；---裝-------訂-----^——線 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐）

Claims (1)

  1. 4 185 48 C8 ___ D8 六'申請專利範圍 L 一種發光二極體總成，包含： 發光二極體’具有第一電氣接點與第二電氣接點 » 封裝’具有耦接至第一電氣接點之第一電極與耗 接至第一電氣接點之第二電極，其中第一電極舆第二 電極電以接收外壓； 電力分壓元件，耦接至第一電氣接點與第二電氣 接點，用以在外壓超過臨限電壓時將電流由發光二極 體導出。 2. 如申請專利範圍第1項之發光二極體總成，其中該電力 分路元件包含背對背結構的電壓夾箝裝置。 3. 如_請專利範圍第2項之發光二極體總成，其中該背對 背結構之電麼失箱裝置包含至少一個稽納二極趙。 4. 如申請專利範圍第2項之發光二極體總成，其中該背對 背結構之電壓夾箝裝置包含至少一個暫態電壓消除器 〇 經濟部智慧財產局員工消費合作社印製 I I n l· *1 J ^1 fa i I I I I (請先閱讀背面之注意事項再填寫本頁) -線· 5. 如申請專利範圍第1項之發光二極體總成，其中該第— 電極具有配接發光二極體之第一安裝位置與配接電力 分路元件之第二安裝位置，而第一電極構成第二電氣 接點舆電力分路元件之間的耦接。 6. 如申請專利範圍第5項之發光二極體總成，其中該電力 分路元件包含背對背結構的電壓夾箝裝置》 7. 如申請專利範圍第5項之發光二極體總成，其中該背對 背結構之電壓夾箝裝置包含至少一個稽納二極體。 私紙張又度適用中國國家標準（CNS)A4規格（210 X 297公釐 ASB8C8D8 /、、申請專利範圍 8. 如申請專利範圍第5項之發光二極體總成，其中該背對 背結構之電壓夾箝裝置包含至少一個暫態電壓消除器 〇 9. 如申請專利範圍第1項之發光二極體總成，其中該電力 分路元件之底表面以倒裝片焊接法附接於第一電極， 而頂表面具有第一與第二接點，其中該發光二極體之 第一電氣接點耦接至第一接點，而該發光二極體之第 二電氣接點耦接至第二接點。 10. 如申請專利範圍第9項之發光二極邀總成，其中該電力 分路元件包含背對背結構的電壓夾箝裝置。 11_如申請專利範圍第9項之發光二極體總成，其中該背對 背結構之電壓夾箝裝置包含至少一個稽納二極體。 12.如申請專利範圍第9項之發光二極體總成，其中該背對 背結構之電壓夾箝裝置包含至少一個暫態電壓消除器 — ！114._丨_-----^-------訂 ---------線--- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製
TW088105388A 1998-08-27 1999-04-03 Light emitting diode assembly having integrated electrostatic discharge protection TW418548B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/141,389 US5914501A (en) 1998-08-27 1998-08-27 Light emitting diode assembly having integrated electrostatic discharge protection

Publications (1)

Publication Number Publication Date
TW418548B true TW418548B (en) 2001-01-11

Family

ID=22495489

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088105388A TW418548B (en) 1998-08-27 1999-04-03 Light emitting diode assembly having integrated electrostatic discharge protection

Country Status (6)

Country Link
US (1) US5914501A (zh)
JP (1) JP2000077718A (zh)
KR (1) KR20000017513A (zh)
DE (1) DE19919944A1 (zh)
GB (1) GB2341018A (zh)
TW (1) TW418548B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI632413B (zh) * 2016-09-13 2018-08-11 日商日本電信電話股份有限公司 半導體光調變元件

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6054716A (en) * 1997-01-10 2000-04-25 Rohm Co., Ltd. Semiconductor light emitting device having a protecting device
US6573537B1 (en) 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US6903376B2 (en) * 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
US6885035B2 (en) 1999-12-22 2005-04-26 Lumileds Lighting U.S., Llc Multi-chip semiconductor LED assembly
US6486499B1 (en) 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6514782B1 (en) 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
JP3686569B2 (ja) * 2000-03-02 2005-08-24 シャープ株式会社 半導体発光装置及びそれを用いた表示装置
JP2002246650A (ja) * 2001-02-13 2002-08-30 Agilent Technologies Japan Ltd 発光ダイオード及びその製造方法
US6551345B2 (en) * 2001-04-26 2003-04-22 Alfred E. Mann Foundation For Scientific Research Protection apparatus for implantable medical device
US20030204218A1 (en) * 2001-04-26 2003-10-30 Vogel Martin J. Protection apparatus for implantable medical device
KR100431760B1 (ko) * 2001-08-08 2004-05-17 삼성전기주식회사 AlGaInN계 반도체 엘이디(LED) 소자 및 그 제조 방법
SG173925A1 (en) 2002-03-22 2011-09-29 Nichia Corp Nitride phosphor and production process thereof, and light emitting device
US20030227020A1 (en) * 2002-06-10 2003-12-11 Excellence Optoelectronics Inc. Light emitting apparatus with current regulation function
KR100497121B1 (ko) * 2002-07-18 2005-06-28 삼성전기주식회사 반도체 led 소자
WO2004050023A2 (en) * 2002-11-27 2004-06-17 Dmi Biosciences, Inc. Treatment of diseases and conditions mediated by increased phosphorylation
TWI230011B (en) * 2002-12-16 2005-03-21 Samsung Electro Mech Television receiving module and display apparatus and television receiving system using the same
US7038540B2 (en) * 2003-02-14 2006-05-02 Powerwave Technologies, Inc. Enhanced efficiency feed forward power amplifier utilizing reduced cancellation bandwidth and small error amplifier
EP1579735B1 (en) * 2002-12-19 2016-03-09 Koninklijke Philips N.V. Leds driver
KR100568269B1 (ko) * 2003-06-23 2006-04-05 삼성전기주식회사 플립-칩 본딩용 질화갈륨계 발광 다이오드 및 그 제조방법
KR100586678B1 (ko) * 2003-07-30 2006-06-07 에피밸리 주식회사 반도체 엘이디 소자
TWI223900B (en) * 2003-07-31 2004-11-11 United Epitaxy Co Ltd ESD protection configuration and method for light emitting diodes
WO2005057672A2 (en) * 2003-12-09 2005-06-23 Gelcore, Llc Surface mount light emitting chip package
US7332861B2 (en) * 2004-02-05 2008-02-19 Agilight, Inc. Light-emitting structures
TWI223890B (en) * 2004-02-06 2004-11-11 Opto Tech Corp Light-emitting diode device with multi-lead pins
US20050269695A1 (en) * 2004-06-07 2005-12-08 Brogle James J Surface-mount chip-scale package
DE102004064150B4 (de) * 2004-06-29 2010-04-29 Osram Opto Semiconductors Gmbh Elektronisches Bauteil mit Gehäuse mit leitfähiger Beschichtung zum ESD-Schutz
US7402842B2 (en) 2004-08-09 2008-07-22 M/A-Com, Inc. Light emitting diode package
TWI239666B (en) * 2004-09-16 2005-09-11 Chen-Lun Hsingchen LED package with diode protection circuit
KR100576872B1 (ko) * 2004-09-17 2006-05-10 삼성전기주식회사 정전기 방전 방지기능을 갖는 질화물 반도체 발광소자
US7081667B2 (en) * 2004-09-24 2006-07-25 Gelcore, Llc Power LED package
JP4611721B2 (ja) * 2004-11-25 2011-01-12 株式会社小糸製作所 発光デバイス及び車両用灯具
US20060205170A1 (en) * 2005-03-09 2006-09-14 Rinne Glenn A Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices
US7595453B2 (en) * 2005-05-24 2009-09-29 M/A-Com Technology Solutions Holdings, Inc. Surface mount package
KR100650191B1 (ko) * 2005-05-31 2006-11-27 삼성전기주식회사 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도 발광다이오드
KR100683612B1 (ko) * 2005-07-07 2007-02-20 서울반도체 주식회사 발광 장치
US8163580B2 (en) 2005-08-10 2012-04-24 Philips Lumileds Lighting Company Llc Multiple die LED and lens optical system
DE102005041064B4 (de) * 2005-08-30 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zu dessen Herstellung
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
US7528422B2 (en) * 2006-01-20 2009-05-05 Hymite A/S Package for a light emitting element with integrated electrostatic discharge protection
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
US7932615B2 (en) * 2006-02-08 2011-04-26 Amkor Technology, Inc. Electronic devices including solder bumps on compliant dielectric layers
US7928462B2 (en) 2006-02-16 2011-04-19 Lg Electronics Inc. Light emitting device having vertical structure, package thereof and method for manufacturing the same
US7564666B2 (en) * 2006-05-02 2009-07-21 Semiconductor Components Industries, L.L.C. Shunt protection circuit and method therefor
KR100875128B1 (ko) * 2007-01-16 2008-12-22 한국광기술원 고내정전압을 갖는 발광다이오드 및 그의 제조방법
JP5060172B2 (ja) * 2007-05-29 2012-10-31 岩谷産業株式会社 半導体発光装置
DE102007044198A1 (de) * 2007-09-17 2009-03-19 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Modul
CN101409320B (zh) * 2007-10-09 2010-06-23 富士迈半导体精密工业（上海）有限公司 基板制作方法
US20090283848A1 (en) * 2008-05-13 2009-11-19 Jds Uniphase Corporation Photodiode Assembly With Improved Electrostatic Discharge Damage Threshold
US9781803B2 (en) * 2008-11-30 2017-10-03 Cree, Inc. LED thermal management system and method
US8643283B2 (en) * 2008-11-30 2014-02-04 Cree, Inc. Electronic device including circuitry comprising open failure-susceptible components, and open failure-actuated anti-fuse pathway
GB2467911B (en) * 2009-02-16 2013-06-05 Rfmd Uk Ltd A semiconductor structure and a method of manufacture thereof
US8405068B2 (en) * 2009-07-22 2013-03-26 Rfmd (Uk) Limited Reflecting light emitting structure and method of manufacture thereof
US8729809B2 (en) * 2009-09-08 2014-05-20 Denovo Lighting, Llc Voltage regulating devices in LED lamps with multiple power sources
US9041294B2 (en) * 2010-09-27 2015-05-26 Semiconductor Components Industries, Llc Semiconductor component and method
US20120112237A1 (en) * 2010-11-05 2012-05-10 Shenzhen China Star Optoelectronics Technology Co. Ltd. Led package structure
CN202001867U (zh) * 2010-11-05 2011-10-05 富士康(昆山)电脑接插件有限公司 指示装置及使用该指示装置的电连接器
TWI535331B (zh) * 2011-01-31 2016-05-21 Midas Wei Trading Co Ltd Light emitting diode protection circuit
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
DE102012101160A1 (de) * 2012-02-14 2013-08-14 Osram Opto Semiconductors Gmbh Lichtquellenmodul
CN103296665B (zh) * 2012-03-05 2016-04-27 北大方正集团有限公司 一种瞬态电压抑制器
US8835976B2 (en) 2012-03-14 2014-09-16 General Electric Company Method and system for ultra miniaturized packages for transient voltage suppressors
US9136341B2 (en) 2012-04-18 2015-09-15 Rf Micro Devices, Inc. High voltage field effect transistor finger terminations
US9124221B2 (en) 2012-07-16 2015-09-01 Rf Micro Devices, Inc. Wide bandwidth radio frequency amplier having dual gate transistors
US8988097B2 (en) 2012-08-24 2015-03-24 Rf Micro Devices, Inc. Method for on-wafer high voltage testing of semiconductor devices
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
US9142620B2 (en) 2012-08-24 2015-09-22 Rf Micro Devices, Inc. Power device packaging having backmetals couple the plurality of bond pads to the die backside
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
US9202874B2 (en) 2012-08-24 2015-12-01 Rf Micro Devices, Inc. Gallium nitride (GaN) device with leakage current-based over-voltage protection
US9070761B2 (en) 2012-08-27 2015-06-30 Rf Micro Devices, Inc. Field effect transistor (FET) having fingers with rippled edges
US9129802B2 (en) 2012-08-27 2015-09-08 Rf Micro Devices, Inc. Lateral semiconductor device with vertical breakdown region
TWI465736B (zh) 2012-10-11 2014-12-21 Ind Tech Res Inst 半導體元件之檢測方法及其檢測系統
US9325281B2 (en) 2012-10-30 2016-04-26 Rf Micro Devices, Inc. Power amplifier controller
US9455327B2 (en) 2014-06-06 2016-09-27 Qorvo Us, Inc. Schottky gated transistor with interfacial layer
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3855606A (en) * 1971-12-23 1974-12-17 Licentia Gmbh Semiconductor arrangement
JPS5261982A (en) * 1975-11-18 1977-05-21 Toshiba Corp Semiconductor light emitting device
US4211955A (en) * 1978-03-02 1980-07-08 Ray Stephen W Solid state lamp
GB8509386D0 (en) * 1985-04-12 1985-05-15 Ford Motor Co Ignition spark transducer
WO1992003867A1 (en) * 1990-08-17 1992-03-05 Mining And Primary Development Pty. Ltd. Surge suppressor device
GB9025837D0 (en) * 1990-11-28 1991-01-09 De Beers Ind Diamond Light emitting diamond device
JPH04365382A (ja) * 1991-06-13 1992-12-17 Toshiba Corp 半導体発光装置及びその駆動方法
JPH07170654A (ja) * 1993-12-14 1995-07-04 Fuji Electric Co Ltd 半導体装置の過電圧制限回路
FR2734113B1 (fr) * 1995-05-12 1997-07-25 Sgs Thomson Microelectronics Composant de protection complet de circuit d'interface de lignes d'abonnes
US5726535A (en) * 1996-04-10 1998-03-10 Yan; Ellis LED retrolift lamp for exit signs
JPH10108359A (ja) * 1996-09-27 1998-04-24 Nissan Motor Co Ltd 入力保護回路
JP3559435B2 (ja) * 1997-01-10 2004-09-02 ローム株式会社 半導体発光素子
JP3764255B2 (ja) * 1997-07-30 2006-04-05 ローム株式会社 半導体発光素子
WO1998034285A1 (fr) * 1997-01-31 1998-08-06 Matsushita Electronics Corporation Element electroluminescent, dispositif electroluminescent a semiconducteur, et leur procede de production

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI632413B (zh) * 2016-09-13 2018-08-11 日商日本電信電話股份有限公司 半導體光調變元件
US11126058B1 (en) 2016-09-13 2021-09-21 Nippon Telegraph And Telephone Corporation Semiconductor optical modulation element

Also Published As

Publication number Publication date
GB2341018A (en) 2000-03-01
DE19919944A1 (de) 2000-03-09
JP2000077718A (ja) 2000-03-14
GB9917515D0 (en) 1999-09-29
KR20000017513A (ko) 2000-03-25
US5914501A (en) 1999-06-22

Similar Documents

Publication Publication Date Title
TW418548B (en) Light emitting diode assembly having integrated electrostatic discharge protection
KR101823506B1 (ko) 발광 소자 패키지 및 이를 구비한 라이트 유닛
US20170079100A1 (en) Ballast stabilizer-compatible lamp having leakage current protection circuit
US20060267040A1 (en) High-brightness LED with protective function of electrostatic discharge damage
US9609717B2 (en) Light-emitting apparatus and lighting appliance provided with the same
TW545698U (en) LED packaging structure with a static charge protecting device
WO2014126437A1 (en) Led chip resistant to electrostatic discharge and led package including the same
US9520386B2 (en) Light source unit and backlight assembly having the same
US5130881A (en) IC socket having overvoltage protection
JP6939740B2 (ja) 半導体モジュール
EP1207563A2 (en) Direct bonding of flip-chip light-emitting diode and flip-chip ESD protection chip to electrodes in a package
JP2010182803A (ja) 発光装置
KR101886073B1 (ko) 발광 소자 패키지 및 이를 구비한 라이트 유닛
JP2005222855A (ja) レセプタクル
CN107293539A (zh) 具有可调节的触发阈值的静电放电保护装置
CN220545197U (zh) 一种差分连接esd的pcb结构
US10270006B2 (en) Light emitting device and light emitting module
US20030227020A1 (en) Light emitting apparatus with current regulation function
EP2375856A1 (en) Transformer arrangement for protecting optoelectronics components
KR102284059B1 (ko) 드라이버 ic 및 led 칩이 통합된 무극성 led 패키지
US20240112994A1 (en) Semiconductor package
KR101260245B1 (ko) 차량용 다기능 퓨즈 연결장치
CN212673048U (zh) 一种带穿刺夹一体式隧道照明灯具的装置
CN207800108U (zh) 一种增强抗esd能力的背光驱动电路
US8633676B2 (en) Charging status display circuit and electronic device using the same

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent