TW417308B - Light emitting diode - Google Patents
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- TW417308B TW417308B TW086108537A TW86108537A01A TW417308B TW 417308 B TW417308 B TW 417308B TW 086108537 A TW086108537 A TW 086108537A TW 86108537A01 A TW86108537A01 A TW 86108537A01A TW 417308 B TW417308 B TW 417308B
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Description
Λ 五、發明說明(1) 本發明係關於一種發光二極體,尤其關於具有控制電, 流分佈作用之發光二極體。 在本案申請人於1997年06月18曰提出申請,發明名稱 $「發光二極體」之第8 61 08537號發明專利申請案中,揭 露如圖1顯示之發光二極體構造,其中由η型GaAs構成之 半導體基層12形成於η型後電極10上,半導體基層12上形 成多層之布拉格反射層3〇,此多層布拉格反射層3〇宜由 AlGalnP或AlGaAs等系列材料構成。積層結構14形成於反 射層30上’此積層結構14中包含由A1GaInP構成之^型底部 束缚層1 40、AlGalnP構成之活性層142 '及由AlGalnP構成 之P型頂部束缚層144。一層p型窗戶層16形成於頂部束缚 f 144 上’此窗戶層16 宜由Gap、GaAsP、GaInP、或AiGaAs 等透明材料構成。一層P型接觸層丨7形成於窗戶層丨6上, 此接觸層17宜由Gap、GaAsP、GaInP、或GaAs等材料構 成 層透明導電膚19形成於接觸層1 了上,且延伸至接觸 層17之中央中空部分’並與窗戶層16形成蕭基障礙,此導 電層19宜由氧化銦、氧化錫、或氧化銦錫等透明材料構 成。一P型前電極20形成於導電層IQ上。 此先别技藝發光二極體之特徵在於導電層1 g與接觸層 17之接觸面形成歐姆接觸,而導電層19與窗戶層丨^之接觸 面形成蕭基障礙,因而自前電極2〇送出之電流,在導電層 1 9中分佈開後,通過該歐姆接觸,但不通過該蕭基障礙, 向下流至活性層1 4 2中,與來自後電極1 〇之電流遭遇, 產生發光作用。Λ 5. Description of the invention (1) The present invention relates to a light-emitting diode, and more particularly to a light-emitting diode having a function of controlling electric current and current distribution. In the application filed on June 18, 1997 by the applicant of this case, the invention patent application No. 8 61 08537 for the invention name "" Light Emitting Diode ", disclosed the light emitting diode structure as shown in Fig. 1, where η A semiconductor base layer 12 made of GaAs is formed on the n-type rear electrode 10, and a multilayer Bragg reflection layer 30 is formed on the semiconductor base layer 12, and the multilayer Bragg reflection layer 30 is preferably composed of a series of materials such as AlGalnP or AlGaAs. The laminated structure 14 is formed on the reflective layer 30. The laminated structure 14 includes a ^ -type bottom tie layer 1 40 made of A1GaInP, an active layer 142 'made of AlGalnP, and a P-type top tie layer 144 made of AlGalnP. A p-type window layer 16 is formed on the top restraint f 144. This window layer 16 is preferably made of a transparent material such as Gap, GaAsP, GaInP, or AiGaAs. A P-type contact layer 7 is formed on the window layer 6. The contact layer 17 is preferably made of a material such as Gap, GaAsP, GaInP, or GaAs. A transparent conductive skin 19 is formed on the contact layer 1 and extends to the contact layer. The central hollow portion 17 'forms a Schottky barrier with the window layer 16, and this conductive layer 19 is preferably made of a transparent material such as indium oxide, tin oxide, or indium tin oxide. A P-type front electrode 20 is formed on the conductive layer IQ. This prior art light emitting diode is characterized in that the conductive layer 1 g and the contact surface of the contact layer 17 form an ohmic contact, and the contact surface of the conductive layer 19 and the window layer ^^ forms a Schottky barrier, so it is sent from the front electrode 20 After the current is distributed in the conductive layer 19, it passes through the ohmic contact, but does not pass through the Schottky barrier, and flows downward into the active layer 14 2 and encounters the current from the rear electrode 10 to generate a light-emitting effect.
五、發明說明(2) 在,2則技藝發光二拖體中,自前電極2 通過該歐姆接觸,但不通過 、出之電抓 極正下方之電流,進而減小& 乂別电 線受前電極2 0阻擋之不良效果。。 發出之光 雖然鉻/金或鉻/銘製成之前電極2〇與導電層Μ 固 :。’但鈦/金或鈦/鋁製成之前電極2 : ”結合:_在實際製造程序中,對鈦/金或心 圣進订打金線作業時,前電極2 〇極易脫離導電層1 9。 而目刖,大多數製造商使用鈦/金或鈦/鋁製成之前 2〇 ’僅有少數製造商使用鉻/金或鉻,鋁製成之前電:,故 大f數製造商有無法利用該發明專利申請案所揭露技術之 問題。 又該先前技藝發光二極體係應用於二極體表面中央 發光之情形,惟在二極體與光纖連接之應用中,二極體中 央須發光,故亦有無法利用該發明專利申請案所&露技術 之問題。 鑑於先前發光二極體之前述各項問題,本發明之一目 的在於提供一種發光二極體,使其中之前電極能夠與接觸 層、窗戶層、或絕緣層結合,以避免前電極與導 穩固結合之問題。 电增…、忐 本發明之另一目的在於提供一種發光二極體,使其表 面中央部分發光’而表面外圍部分不發光,俾適用於& 纖連接之情形。 、^ 兹參考下列圖式’詳細說明本發明之較佳實施例如V. Description of the invention (2) In the two technology light-emitting two-prong body, the current from the front electrode 2 passes through the ohmic contact, but does not pass, and the electric current catches the current directly below the electrode, thereby reducing the & The bad effect of the front electrode 20 blocking. . The light emitted though chrome / gold or chrome / ming is made before the electrode 20 is solid with the conductive layer M :. 'But the front electrode 2 made of titanium / gold or titanium / aluminum: "Combination: _In the actual manufacturing process, when the titanium / gold or the heart is advanced to make a gold wire operation, the front electrode 2 is easily detached from the conductive layer 1 9. At the moment, most manufacturers use titanium / gold or titanium / aluminum before 20 '. Only a few manufacturers use chromium / gold or chromium, and aluminum is made before electricity: so large numbers of manufacturers have The problem of the technology disclosed in the invention patent application cannot be used. Also, the prior art light emitting diode system is applied to the surface of the diode to emit light in the center. However, in the application of the connection between the diode and the optical fiber, the center of the diode must emit light. Therefore, there is also a problem that the technology of the invention patent application cannot be used. In view of the foregoing problems of the previous light emitting diode, an object of the present invention is to provide a light emitting diode, in which the previous electrode can communicate with The contact layer, the window layer, or the insulation layer is combined to avoid the problem of the stable combination of the front electrode and the conductor. Electricity increase ... Another object of the present invention is to provide a light-emitting diode that emits light on the central portion of the surface and the surface thereof. Peripheral Does not emit light, suitable to serve &.-Fiber connector of the case, with reference to the following drawings hereby ^ 'described in detail the preferred embodiment of the present invention e.g.
_^ .1 . ; :> _ 五、發明說明(3) ^ ' ---- 後: 圖式之簡單說明: 圖1種先前技藝發光二極體結構的剖面示意圖; 圖2為依本發明第一較佳實施例之發光二極體結構的 剖面示意圖; 圖3為依本發明第一較佳實施例之俯視圖; 圖4為依本發明第二較佳實施例之發光二極體結構的 刻面示意圖; 圖5為依本發明第三較佳實施例之發光二極體結構的 剖面示意圖; 圖6為依本發明第四較佳實施例之發光二極體結構的 剖面示意圖; 圖7為依本發明第五較佳實施例之發光二極體結構的 剖面示意圖;以及 圖8為依本發明第六較佳實施例之發光二極體結構的 剖面示意圓; 茲參照各附圖’詳細說明本發明如後。 圖2顯示依本發明第一較佳實施例之發光二極體結 構’其中由π型GaAs構成之半導體基層12形成於η型後電極 10上,半導體基層12上形成多層之布拉格反射層3〇,此多 層布拉格反射層30宜由AlGalnP或AiGaAs等系列材料構 成。積層結構14形成於反射層3〇上,此積層結構ί4中包含 由AlGaluP構成之η型底部束缚層丨40、A1GaInP構成之活性 層142、及由AlGalnP構成之p型頂部束縛層144。一層p型_ ^ .1.; : ≫ _ V. Description of the invention (3) ^ '---- After: a brief description of the figure: Figure 1 is a schematic sectional view of a light-emitting diode structure of the prior art; A schematic cross-sectional view of a light emitting diode structure according to the first preferred embodiment of the present invention; FIG. 3 is a top view of the light emitting diode structure according to the first preferred embodiment of the present invention; FIG. 4 is a light emitting diode structure according to the second preferred embodiment of the present invention Fig. 5 is a schematic sectional view of a light emitting diode structure according to a third preferred embodiment of the present invention; Fig. 6 is a schematic sectional view of a light emitting diode structure according to a fourth preferred embodiment of the present invention; 7 is a schematic cross-sectional view of a light-emitting diode structure according to a fifth preferred embodiment of the present invention; and FIG. 8 is a schematic cross-sectional view of a light-emitting diode structure according to a sixth preferred embodiment of the present invention; 'Detailed description of the present invention is as follows. FIG. 2 shows a light emitting diode structure according to the first preferred embodiment of the present invention, in which a semiconductor base layer 12 composed of π-type GaAs is formed on an n-type rear electrode 10, and a multilayer Bragg reflection layer 3 is formed on the semiconductor base layer 12. The multilayer Bragg reflection layer 30 is preferably composed of a series of materials such as AlGalnP or AiGaAs. The laminated structure 14 is formed on the reflective layer 30. The laminated structure ί4 includes an n-type bottom binding layer 40 made of AlGaluP, an active layer 142 made of A1GaInP, and a p-type top binding layer 144 made of AlGalnP. P-type
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窗戶層16形成於頂部束缚層144上,此窗戶層μ —The window layer 16 is formed on the top restraint layer 144, and this window layer μ —
GaAsP、GalnP、AlGalnP、或AlGaAs 等透明材料 ^ 3 一、’ 層p型接觸層17形成於窗戶層16上,接觸層w中& 蝕刻或濕蝕刻形成一圓形穿孔。此接觸層丨7宜由hp、 6Transparent materials such as GaAsP, GalnP, AlGalnP, or AlGaAs ^ 3 I. A layer of p-type contact layer 17 is formed on the window layer 16, and a circular perforation is formed in the contact layer & or wet etching. This contact layer 7 should be composed of hp, 6
GaAsP、GaInP、或GaAS等透明材料構成。一^透明3雷 19形成於接觸層17上,並與接觸層17間形成歐姆接觸, 電層19之中央,以乾蝕刻或濕蝕刻形成—圓形穿孔,此^ 電層1 9宜由氧化銦錫、氧化銦、氧化錫、氧化辞、 鎂等透明材料構成。前電極20與導電層丨9接觸,且通過 電層19中央之圓形穿孔與接觸層17中央之圓形穿孔,與 戶層16接觸。由於前電極20可與由半導體材料製成之窗戶 層16結合,故可依習用技術選擇由適當材料製成之前電極 20,使其與窗戶層16穩固結合,且與窗戶層16間形成蕭基 障礙’例如’對於由GaP製成之窗戶層16,可選擇由 Τι/Al、Ti/Au、Cr/Al、或CrVAu製成之前電極2〇。又由於 V電層19與接觸層17間形成歐姆接觸’而前電極2〇與窗戶 層1 6間形成蕭基障礙,故自前電極2〇送出之電流在^電層 19中散佈開後,僅通過該歐姆接觸部分,但不通過該蕭基 障礙,向下流動,因而能夠減少自前電極2〇送出之電流, 於活性層1 4 2中,在前電極20正下方產生發光作用之情 形,故可儘量避免前電極20阻擋光線之不良效果,而增進 二極體之發光效率。 由於前電極20可與由半導體材料製成之窗戶層丄6結 合,故可依習用技術選擇由適當材料製成之前電極2〇,使It is made of a transparent material such as GaAsP, GaInP, or GaAS. A ^ transparent 3 thunder 19 is formed on the contact layer 17 and forms an ohmic contact with the contact layer 17. The center of the electrical layer 19 is formed by dry etching or wet etching-a circular perforation. The electrical layer 19 should be oxidized. Made of transparent materials such as indium tin, indium oxide, tin oxide, oxide, and magnesium. The front electrode 20 is in contact with the conductive layer 9 and passes through the circular perforation in the center of the electrical layer 19 and the circular perforation in the center of the contact layer 17 to contact the user layer 16. Since the front electrode 20 can be combined with the window layer 16 made of a semiconductor material, the front electrode 20 made of an appropriate material can be selected according to conventional techniques, so that the front electrode 20 is firmly combined with the window layer 16 and forms a small base with the window layer 16. Barrier 'for example' For the window layer 16 made of GaP, the front electrode 20 made of Ti / Al, Ti / Au, Cr / Al, or CrVAu can be selected. Because the ohmic contact is formed between the V electrical layer 19 and the contact layer 17 and the Schottky barrier is formed between the front electrode 20 and the window layer 16, the current sent from the front electrode 20 is dispersed in the electrical layer 19 and only Through the ohmic contact portion, but not through the Schottky barrier, it flows downward, so that the current sent from the front electrode 20 can be reduced, and in the active layer 142, a light emitting effect occurs directly below the front electrode 20, so The adverse effect of the front electrode 20 blocking light can be avoided as much as possible, and the luminous efficiency of the diode can be improved. Since the front electrode 20 can be combined with the window layer 丄 6 made of a semiconductor material, the front electrode 20 made of an appropriate material can be selected according to conventional techniques, so that
C:\Program Files\Patent\pl0s001001.ptd 第 7 頁 五、發明説明(5) 其與窗戶層1 6穩固結合,因而,對前電極2 〇進行打金線作 業時,玎避免前電極2 0脫離發光二極體之問題。 圖3顯示前電極2 〇有四個自中央向外延伸之延伸指 31,用以傳送電流至導電層1 9,又可儘量減小前電極2 〇阻 擋光線之機率。 圖4顯示依本發明第二較佳實施例之發光二極體結 構,其與該第一較佳實施例之不同處在於:在此第二較佳 實施例中’接觸層1 7中央圓形穿孔之直徑大於導電層1 9中 央圓形穿孔之直徑’導電層丨9中有一部份形成於接觸層17 上’另一部份於接觸層1 7中央圓形穿孔之内側,形成於窗 户層16 央之圓 1 7間形 礙,且 極2 0送 觸部分 自前電 正下方 光線之 圖 構,其 中央圓 化石夕、 觸層1 7 上,前電極20 形穿孔,與窗 成歐姆接觸, 前電極20與窗 出之電流在導 ’但不通過該 極2 0送出之電 產生發光作用 不良效果,而 5顯示依本發 與該第二較佳 形穿孔内形成 亂化石夕、或氧 與絕緣層1 8上 導電層19接觸,且通過導電層19中 戶層1 6接觸 而導電層1 9 戶層1 6間亦 電層1 9中散 蕭基障礙, 流’於活性 之情形,故 增進二極體 明第三較佳 實施例之不 一絕緣層1 8 化銘等材料 。導電層19 。由於導電層19與接觸層 與窗戶層1 6間形成蕭基障 形成簫基障礙,故自前電 佈開後,僅通過該歐姆接 向下流動’因而能夠減少 層142中,在前電極2 〇 可儘量避免前電極20阻擒 之發光效率。 實施例之發光二極體結 同處在於:在接觸層17之 ,此絕緣層1 8例如可由氧 構。一導電層19形成於接 之中央,以乾蝕刻或濕蝕C: \ Program Files \ Patent \ pl0s001001.ptd Page 7 V. Description of the invention (5) It is firmly combined with the window layer 16; therefore, when performing gold wire work on the front electrode 20, avoid the front electrode 2 0 Get rid of the problem of light-emitting diodes. Figure 3 shows that the front electrode 20 has four extending fingers 31 extending from the center outward to transmit current to the conductive layer 19, and the probability that the front electrode 20 can block light is minimized. FIG. 4 shows a light-emitting diode structure according to a second preferred embodiment of the present invention, which is different from the first preferred embodiment in that: in this second preferred embodiment, the 'contact layer 17 is circular in the center The diameter of the perforation is larger than the diameter of the central circular perforation of the conductive layer 19. One part of the conductive layer 9 is formed on the contact layer 17 and the other is inside the central circular perforation of the contact layer 17 and is formed on the window layer. 16 The center of the circle has 17 obstacles, and the pole 20 sends the part of the light directly from the front of the electricity. The central circle of the fossil evening, the contact layer 17, the front electrode 20 is perforated, and makes ohmic contact with the window. The current from the front electrode 20 and the window is conductive but does not pass through the electricity sent from the electrode 20 to produce a bad effect of luminescence, and 5 shows that chaotic fossils, or oxygen and oxygen are formed within the second preferred shape of the perforation according to the present invention. The insulating layer 18 is in contact with the conductive layer 19, and the conductive layer 19 is in contact with the conductive layer 19 in the conductive layer 19, and the conductive layer 19 is dispersed in the electrical layer 19, which is in the active condition, so Improving the insulation layer of the third preferred embodiment of the diode Material. Conductive layer 19 Since the conductive layer 19, the contact layer, and the window layer 16 form a Schottky barrier to form a Xiaoji barrier, after the front electrical distribution, only the ohmic connection flows downwards, thereby reducing the number of layers 142 in the front electrode 2. The luminous efficiency of the front electrode 20 can be avoided as much as possible. The light-emitting diode structure of the embodiment is the same as that: in the contact layer 17, the insulating layer 18 can be made of oxygen, for example. A conductive layer 19 is formed in the center of the conductive layer for dry etching or wet etching.
C.\ProgramFiles\patent\pl〇s〇_〇1.ptd 第 8 頁C. \ ProgramFiles \ patent \ pl〇s〇_〇1.ptd page 8
五、發明說明(6) '—~' - 刻形成一圓形穿孔。前電極2〇與導電層丨g接觸,並通過導, 電層19中j之該圓形穿孔’形成於絕緣層18上。 由於前電極20可與由習用絕緣材料製成之絕緣層丨8結 合,故可依習用技術選擇由適當枒料製成之前電極2〇,使 其與絕緣層1 8穩固結合,因而,對前電極2〇進行打金線作 業時’可避免前電極20脫離發光二極體之問題。 圖6顯不依本發明第四較佳實施例之發光二極體結 構,其與該第一較佳實施例之不同處在於:一接觸層丨7僅 於窗戶層16中央之適當尺寸圓形區域中,形成於窗戶層16 上。無中央穿孔之導電層1 9形成於接觸層17與窗戶層16 上。具有中央穿孔之前電極2〇形成於導電層丨9上’前電極 20中央穿孔之直徑大於該圓形區域之直徑。由於導電層19 與窗戶層16間形成蕭基障礙,而導電層19與接觸層17間形 成^姆接觸’故自前電極2〇送出之電流通過導電層ig後, 僅通過該歐姆接觸部分,但不通過該蕭基障礙,向下流 動’因而自前電極20送出之電流,於活性層!42中,大都 在接觸層17正下方產生發光作用之情形,故可儘量避免前 電極20阻撞光線之不良效果’而增進二極體之發光效率。 圖7顯示依本發明第五較佳實施例之發光二極體結 構’其與該第四較佳實施例之主要不同處在於:在如第四 較佳實施例發光二極體導電層1 9與窗戶層丨6形成蕭基障礙 之位置,於導電層1 9與窗戶層1 6間加設一層絕緣層丨8。在 如第四較佳實施例發光二極體導電層1 9與窗戶層1 6間所形 成之蕭基障礙不足以抵抗前電極20與後電極間之電壓降5. Description of the invention (6) '-~'-Carved into a circular perforation. The front electrode 20 is in contact with the conductive layer 丨 g and is formed on the insulating layer 18 through the circular perforation 'of the conductive layer 19. Because the front electrode 20 can be combined with an insulating layer 丨 8 made of a conventional insulating material, the front electrode 20 can be made of an appropriate material according to conventional technology, so that it can be firmly combined with the insulating layer 18. When the electrode 20 performs a gold wire operation, the problem that the front electrode 20 is separated from the light emitting diode can be avoided. FIG. 6 shows a light emitting diode structure according to the fourth preferred embodiment of the present invention, which is different from the first preferred embodiment in that a contact layer 7 is only a circular area of an appropriate size in the center of the window layer 16 Is formed on the window layer 16. A conductive layer 19 without a central perforation is formed on the contact layer 17 and the window layer 16. The front electrode 20 having a central perforation is formed on the conductive layer 9 and the diameter of the central perforation of the front electrode 20 is larger than the diameter of the circular region. Since the Schottky barrier is formed between the conductive layer 19 and the window layer 16, and the contact between the conductive layer 19 and the contact layer 17 is formed, after the current sent from the front electrode 20 passes through the conductive layer ig, it only passes through the ohmic contact portion, but Do not pass through the Schottky barrier, and the current flowing from the front electrode 20 flows down, so the current flows in the active layer! In 42, most of the light-emitting effect occurs directly under the contact layer 17, so the adverse effect of the front electrode 20 blocking light can be avoided as much as possible and the light-emitting efficiency of the diode can be improved. FIG. 7 shows a light-emitting diode structure according to a fifth preferred embodiment of the present invention, which is mainly different from the fourth preferred embodiment in that the light-emitting diode conductive layer 19 is the same as the fourth preferred embodiment. Form a location of the Xiaoji barrier with the window layer 丨 6, and add an insulating layer 丨 8 between the conductive layer 19 and the window layer 16. The Schottky barrier formed between the light emitting diode conductive layer 19 and the window layer 16 as in the fourth preferred embodiment is not enough to resist the voltage drop between the front electrode 20 and the rear electrode.
C:\ProgramFiles\Patent\pl0s001001.ptd 第 9 頁C: \ ProgramFiles \ Patent \ pl0s001001.ptd page 9
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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TW086108537A TW417308B (en) | 1997-06-18 | 1997-06-18 | Light emitting diode |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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TW086108537A TW417308B (en) | 1997-06-18 | 1997-06-18 | Light emitting diode |
TW086108537A TW344900B (en) | 1997-06-18 | 1997-06-18 | Light-emitting diode a light-emitting diode comprises a substrate formed on a first electrode; a first bonding layer; an active layer; a second bonding layer; etc. |
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TW417308B true TW417308B (en) | 2001-01-01 |
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TW086108537A TW417308B (en) | 1997-06-18 | 1997-06-18 | Light emitting diode |
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Cited By (1)
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TWI472053B (en) * | 2007-09-14 | 2015-02-01 | Sharp Kk | Nitride semiconductor light-emitting device |
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1997
- 1997-06-18 TW TW086108537A patent/TW417308B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI472053B (en) * | 2007-09-14 | 2015-02-01 | Sharp Kk | Nitride semiconductor light-emitting device |
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