TW344900B - Light-emitting diode a light-emitting diode comprises a substrate formed on a first electrode; a first bonding layer; an active layer; a second bonding layer; etc. - Google Patents

Light-emitting diode a light-emitting diode comprises a substrate formed on a first electrode; a first bonding layer; an active layer; a second bonding layer; etc.

Info

Publication number
TW344900B
TW344900B TW086108537A TW86108537A TW344900B TW 344900 B TW344900 B TW 344900B TW 086108537 A TW086108537 A TW 086108537A TW 86108537 A TW86108537 A TW 86108537A TW 344900 B TW344900 B TW 344900B
Authority
TW
Taiwan
Prior art keywords
layer
emitting diode
light
bonding layer
electrode
Prior art date
Application number
TW086108537A
Other languages
Chinese (zh)
Inventor
Biing-Jye Lii
Ming-Jiunn Jou
Chang-Lin Tarn
Original Assignee
Jing Yuan Opto-Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US08/840,914 priority Critical patent/US6057562A/en
Application filed by Jing Yuan Opto-Electronics Corp filed Critical Jing Yuan Opto-Electronics Corp
Priority to TW086108537A priority patent/TW417308B/en
Priority to TW086108537A priority patent/TW344900B/en
Priority to DE19817368A priority patent/DE19817368B4/en
Priority to JP12807798A priority patent/JP3084364B2/en
Application granted granted Critical
Publication of TW344900B publication Critical patent/TW344900B/en

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  • Led Devices (AREA)

Abstract

A light-emitting diode at least comprising: a substrate formed on a first electrode; a first bonding layer having a first conductivity formed on the substrate; an active layer formed on the first bonding layer; a second bonding layer having a second conductivity formed on the active layer; a window layer having the second conductivity formed on the second bonding layer, the resistance of the window layer being smaller than the resistance of the second bonding layer; a contact layer having the second conductivity formed on the window layer for providing an ohmic contact, the contact layer having a recessed region extending from the top portion of the contact layer to the bottom portion of the contact layer thereby going through the surface of the window layer; a conductive transparent oxide layer formed on the contact layer and filling up the recessed region in the contact layer, the resistance of the conductive transparent oxide layer being smaller than the resistance of the window layer and the contact layer; and a second electrode formed on the surface of a portion of the conductive transparent oxide layer, the second electrode being approximately in alignment with the recessed region in the contact layer.
TW086108537A 1997-04-18 1997-06-18 Light-emitting diode a light-emitting diode comprises a substrate formed on a first electrode; a first bonding layer; an active layer; a second bonding layer; etc. TW344900B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US08/840,914 US6057562A (en) 1997-04-18 1997-04-18 High efficiency light emitting diode with distributed Bragg reflector
TW086108537A TW417308B (en) 1997-06-18 1997-06-18 Light emitting diode
TW086108537A TW344900B (en) 1997-06-18 1997-06-18 Light-emitting diode a light-emitting diode comprises a substrate formed on a first electrode; a first bonding layer; an active layer; a second bonding layer; etc.
DE19817368A DE19817368B4 (en) 1997-04-18 1998-04-18 led
JP12807798A JP3084364B2 (en) 1997-04-18 1998-04-23 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086108537A TW344900B (en) 1997-06-18 1997-06-18 Light-emitting diode a light-emitting diode comprises a substrate formed on a first electrode; a first bonding layer; an active layer; a second bonding layer; etc.

Publications (1)

Publication Number Publication Date
TW344900B true TW344900B (en) 1998-11-11

Family

ID=60654468

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086108537A TW344900B (en) 1997-04-18 1997-06-18 Light-emitting diode a light-emitting diode comprises a substrate formed on a first electrode; a first bonding layer; an active layer; a second bonding layer; etc.

Country Status (1)

Country Link
TW (1) TW344900B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8882290B2 (en) 2006-05-15 2014-11-11 Epistar Corporation Light-mixing type light-emitting apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8882290B2 (en) 2006-05-15 2014-11-11 Epistar Corporation Light-mixing type light-emitting apparatus

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