415877 五、發明說明（l) 5 -1發明領域： 本發明係有關於一種使用於半導體晶片之研磨機械方 法’特別是在化學機械研磨時，藉中性溶液以改善多段式 研磨法而配合完成。 5-2發明背景： 化學機械研磨（CMP)製程的"全面性平坦化η技術目前 為全球半導體公司所大量採用的平坦化製程。這是利用機 械式研磨的原理’並配合適當的研漿（siurry)，來把晶片 表面高低起伏不一的輪廓，加以磨平的平坦化技術。研漿 通常是含有二氧化矽或氧化鋁的溶液。一但各種製程參數 控制得宜，化學機械研磨製程可以提供被研磨表面高達百 分之九十四以上的平坦度。 基本上化學機械研磨機是由一個或數個用來進行晶片 化學機械研磨的研磨台’及一個或數個用來抓住被研磨晶 片的研磨頭（Head)所組成。運作時，研磨頭抓住晶片的背 面’把晶片的正面壓在鋪有一層研磨墊（Pad)的研磨台上 以進行化學機械研磨。當化學機械研磨進行時，研漿會沿 輸送管，持續送到研磨台D此時化學機械研磨便是利用研 桌所提供的化學反應與晶片在研磨台上所承受的機械研磨415877 V. Description of the invention (l) 5 -1 Field of the invention: The present invention relates to a polishing mechanical method for semiconductor wafers, especially when chemical mechanical polishing is performed by using a neutral solution to improve the multi-stage polishing method. . 5-2 Background of the Invention: The "Comprehensive Planarization η" technology of the Chemical Mechanical Polishing (CMP) process is currently a planarization process widely used by semiconductor companies worldwide. This is a flattening technique that uses the principle of mechanical grinding and uses appropriate siurry to smooth the unevenness of the surface of the wafer. A mortar is usually a solution containing silica or alumina. Once the various process parameters are properly controlled, the chemical mechanical polishing process can provide a flatness of more than 94% of the surface being polished. Basically, a chemical mechanical polishing machine is composed of one or more polishing tables for chemical mechanical polishing of wafers and one or more polishing heads for grasping a wafer to be polished. During operation, the polishing head grasps the backside of the wafer 'and presses the front side of the wafer on a polishing table with a layer of pads for chemical mechanical polishing. When the chemical mechanical polishing is performed, the slurry will be sent along the conveying pipe to the polishing table D. At this time, the chemical mechanical polishing uses the chemical reaction provided by the research table and the mechanical polishing of the wafer on the polishing table.
415877 五、發明說明（2) ，把晶片上突出的沉積層’一步一步地加以除去的一種平' 坦化技術。 針對鎢的化學機械研磨法’因殘留的化學研磨劑具高 酸鹼度，會對晶片有不良效果，如第一A與第一 B圖式。因 此如何除去所殘留的具高酸鹼度化學研磨劑之不良效果成 了重要課題。 5 - 3發明目的及概述： 本發明的目的在於消除使用化學機械研磨機械時，其 化學研磨劑在晶片表面產生的不良效應。此不良效應會造 成晶片良率（Y i e 1 d)的損失。所以根據以上所述之目的， 本發明提供了一種使用於半導體晶片研磨機械裝置的改良 方法。其步驟至少包括：首先將晶片裝置於化學機械研磨 機械裝置之研磨平台；再次將一研磨頭對準化學機械研磨 裝置之研磨平台，以研磨晶片：接著在研磨後以溶液清潔 晶片；最後將研磨頭對準化學機械研磨裝置之研磨平台， 以研磨晶片，藉此使研磨之酸鹼效應減至最低。 5-4圖式簡單說明·_415877 V. Description of the invention (2), a flattening technique for removing the protruding deposit layer on the wafer step by step. The chemical mechanical polishing method for tungsten 'has a high acidity and alkalinity due to the residual chemical polishing agent, and has adverse effects on the wafer, such as the first A and first B patterns. Therefore, how to remove the adverse effects of the remaining high-pH chemical abrasives has become an important issue. 5-3 Purpose and Summary of the Invention: The purpose of the present invention is to eliminate the adverse effect of the chemical polishing agent on the wafer surface when a chemical mechanical polishing machine is used. This adverse effect will result in a loss of wafer yield (Y i e 1 d). Therefore, according to the above object, the present invention provides an improved method for a semiconductor wafer polishing machine. The steps at least include: firstly mounting the wafer on the polishing platform of the chemical mechanical polishing mechanical device; aligning a polishing head with the polishing platform of the chemical mechanical polishing device again to grind the wafer: then cleaning the wafer with a solution after grinding; The head is aligned with the polishing platform of the chemical mechanical polishing device to grind the wafer, thereby minimizing the acid-base effect of the polishing. 5-4 Schematic description
415877 五、發明說明（3) 第一 A圖顯示先前技術所得之結果。 第一 B圖顯示先前技術所得結果之放大圖。 第二A圖顯示具單一研磨頭之化學機械研磨製程示意 圓。 第二B圖顯示具三研磨接觸頭之化學機械研磨製程示 意圖。 圖中主要部份之代表符號： 2 1半導體晶片 1 00研磨平台 1 01 研磨墊 101A 第一研磨墊 1 0 1 B 第二研磨墊 1 0 1 C第三研磨墊 102 研磨頭 102A第一研磨頭 102B第二研磨頭 102C第三研磨頭 103 研磨劑供管 103A 第一研磨劑供管 103B第二研磨劑供管 103C第三研磨劑供管415877 V. Description of the invention (3) The first diagram A shows the results obtained by the prior art. Panel B shows an enlarged view of the results obtained by the prior art. The second diagram A shows a schematic circle of a CMP process with a single grinding head. Figure 2B shows the schematic view of the CMP process with three grinding contacts. Representative symbols in the figure: 2 1 semiconductor wafer 1 00 polishing platform 1 01 polishing pad 101A first polishing pad 1 0 1 B second polishing pad 1 0 1 C third polishing pad 102 polishing head 102A first polishing head 102B second polishing head 102C third polishing head 103 abrasive supply pipe 103A first abrasive supply pipe 103B second abrasive supply pipe 103C third abrasive supply pipe
415877 五、發明說明（4) 5 - 5發明詳細說明： 本發明是有關於一種以加入中性溶劑洗蘇的方法，用 以作為半導體晶片化學機械之研磨裝置，如第一 A圖所式 ’其基本裝置為半導體晶片21，研磨平台100，研磨墊101 ，研磨頭102與研磨劑供管1〇3。 其步驟為如第二B圓之以下說明，將一半導體晶片21 裝置於化學機械研磨機械裝置之第一研磨平台101A ; —研 磨頭102A對準化學機械研磨裝置之第一研磨平台i〇iA，並 透過研磨劑供管1 〇 3 A供給化學研磨劑以研磨半導體晶片21 ;將半導體晶片21轉移並裝置於第二研磨平台101B ;研磨 頭102B對準第二研磨平台101B，以研磨半導體晶片21 ;在 研磨後透過研磨劑供管1 〇3B以溶液清潔半導體晶片；將半 導體晶>121轉移並裝置於第三研磨平台101C ;透過研磨劑 供管103C以溶液清潔半導體晶片21 ;及最後研磨頭102C對 準研磨裝置之第三研磨平台101C，以研磨半導體晶片21 ; 藉此使研磨之研磨劑引起之不良效應減至最低。 通常在第二研磨平台1 0 1 B研磨該半導體晶片之時間相 當於在第三研磨墊1 〇 1 C研磨該半導體晶片之時間。且在第 二研磨墊1 0 1 B清洗該半導體晶片之時間相當於在第三研磨 墊1 0 1 C清洗該半導體晶片之時間。使用之溶液一般為去離 子水。而使用鎢化學研磨劑之鎢薄膜厚度約2 0 0 0埃。同時415877 V. Description of the invention (4) 5-5 Detailed description of the invention: The present invention relates to a method for washing by adding a neutral solvent, which is used as a polishing device for semiconductor wafer chemical machinery. The basic device is a semiconductor wafer 21, a polishing table 100, a polishing pad 101, a polishing head 102 and an abrasive supply pipe 103. The steps are as follows in the second circle B. A semiconductor wafer 21 is mounted on the first polishing table 101A of the chemical mechanical polishing device; the polishing head 102A is aligned with the first polishing table 101a of the chemical mechanical polishing device. A chemical abrasive is supplied through the abrasive supply pipe 103A to grind the semiconductor wafer 21; the semiconductor wafer 21 is transferred and mounted on the second polishing table 101B; the polishing head 102B is aligned with the second polishing table 101B to grind the semiconductor wafer 21 ; After cleaning, the semiconductor wafer is cleaned with a solution through the abrasive supply tube 103B; the semiconductor wafer> 121 is transferred and installed on the third polishing platform 101C; the semiconductor wafer 21 is cleaned with the solution through the abrasive supply tube 103C; and finally polished The head 102C is aligned with the third polishing table 101C of the polishing device to grind the semiconductor wafer 21; thereby, the adverse effect caused by the ground abrasive is minimized. Generally, the time for grinding the semiconductor wafer at the second polishing table 10 1 B is equivalent to the time for grinding the semiconductor wafer at the third polishing pad 10 C. And the time for cleaning the semiconductor wafer in the second polishing pad 10 1 B is equivalent to the time for cleaning the semiconductor wafer in the third polishing pad 10 1 C. The solution used is generally deionized water. The thickness of tungsten film using tungsten chemical abrasive is about 2000 angstroms. Simultaneously
第7頁 415877 五、發明說明（5) 研磨鎢薄膜須在第一研磨墊1 0 1A使用鎢化學研磨劑研磨且· 研磨鎢薄膜亦須在第二研磨墊1〇18使用鎢化學研磨劑研磨 •，同理研磨鎢薄膜須在第三研磨墊1 〇 1C使用鎢化學研磨劑 研磨。此處使用鎢化學研磨劑之鎢薄膜厚度約200埃至500 埃。而鎢化學研磨劑與二氧化矽化學研磨劑之酸鹼值相反 而本發明可適用於包括各式各樣型式的研磨機械裝製 如Westech ’ Syatems ， Fujikoshi ， Cybeq Systems ， Strasbaugh ’ Presi， SpeedFam 及AMAT 等型式的機台。 以上所述僅為本發明之較佳實施例而已，並非用以限 定本發明之申請專利範圍；凡其它未脫離本發明所揭示之 精神下所完成之等效改變或修飾，均應包含在下述之申請 專利範圍内。Page 7 415877 V. Description of the invention (5) The tungsten film must be polished on the first polishing pad 1 0 1A with tungsten chemical abrasive and the tungsten film must also be polished on the second polishing pad 1018 with tungsten chemical abrasive • For the same reason, the tungsten film must be polished on the third polishing pad 10C with a tungsten chemical abrasive. The tungsten thin film using a tungsten chemical abrasive here has a thickness of about 200 angstroms to 500 angstroms. The chemical and abrasive values of tungsten chemical abrasives and silicon dioxide chemical abrasives are opposite, and the present invention can be applied to various types of grinding machinery such as Westech 'Syatems, Fujikoshi, Cybeq Systems, Strasbaugh' Presi, SpeedFam and AMAT and other types of machines. The above are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention shall be included in the following Within the scope of patent application.