TW414931B - IC process compatible device fabrication method of the bolometer array - Google Patents

Abstract

This invention provides an IC process compatible device fabrication method of the bolometer array, in which the sensing device is the thermal isolating floating thin plate structure supported by the thin and long pins. The manufacturing characteristics of this invention are shown below. The metallization process of the integrated circuit (IC) is defined as the sacrificial layer design of the thermal sensing device. The material used to support the floating thin plate structure is fabricated by using the planarization technology of the dielectrics in the IC process, in addition, the step coverage problem occurred when manufacturing thin film sensing resistor on top of the floating thin plate structure is resolved. The aluminum or aluminum alloy with high temperature coefficient is selected to manufacture the thin-film sensing resistor. The whole manufacturing process of the bolometer in this invention is then completely compatible with the present commercial IC process.

Description

414931 V. Description of the invention (丨) [Scope of application of the invention] The present invention relates to a method for manufacturing an infrared thermal sensor array element compatible with the integrated circuit manufacturing process, and uses a special process design to make the entire infrared thermal sensor The manufacturing process is completely compatible with the commercial integrated circuit manufacturing process at the current stage, in order to facilitate manufacturing and production and reduce costs. [Knowledge related technology] Infrared thermal sensor (b ο 1 〇meter) is to use a material with a high temperature coefficient of temperature (Temperature Coefficient of Resistance, TCR,% / o C) as the sensing resistance. The amount of infrared thermal radiation generated by the temperature causes the resistance value of the sensing resistor to change, and the temperature of the measured object can be measured by reading and correcting through electrical signals. The main factors that affect the characteristics of an infrared thermal sensor are the thermal conductivity of the infrared element structure (t h e r m a 1 conduction), the thermal capacitance, and the temperature coefficient of resistance of the sensing material. The design of the low thermal conductivity structure and the material of the south temperature coefficient of resistance can increase the response of the sensing element (r e s ρ ο n s i v i t y), and the structure of the low thermal capacity can increase the response rate of the sensing element. In short, low-conductivity, low-heat-capacity structures, and high-resistance temperature coefficient materials are the only ways to design this component. With the development of micromachining technology in the 1980s, the suspended sheet structure (thin plate structure can reduce heat capacity) with a high thermal insulation effect (low thermal conductivity) has greatly improved the degree of response and response rate of the sensing element. Infrared thermal sensing The development of the device has made more progress. The sensor can be miniaturized and integrated by using Shixi micro-machining technology and integrated circuit manufacturing process. In addition to the traditional single element manufacturing, monolithic array manufacturing is also provided.

414931 V. Description of the invention (2), Feasibility. As the array element can obtain infrared images, this is further extended-the application range of the element includes: image measurement and infrared image monitoring of temperature distribution in military reconnaissance and defense, automotive night vision, medical inspection, industrial automation inspection and security monitoring. Related technologies and sensing resistors used can be found in: Wood et al., 1988 (VOx); Liu et al 1992 (Poly-Si); Hornbeck et al., 1990 (amorphous Si); Tanaka et al., 1995 (titanium (Ti)). In the development of related array element technology, sacrificia 1 1 ayer method is the most commonly used method. Use to increase element density (reduce chip area) and increase element fill factor (fin factor) (the so-called fill factor is defined as the suspended sheet sensing area / pixel (P i X e 1) area, which corresponds to incident heat Ratio of radiation to the sensing element). The manufacturing method first defines a circuit part on a silicon wafer, and then begins to manufacture a sensing element part. First, a sacrificial layer material and an etching are defined to define a shape, and then a structure and a sensing resistance material are defined thereon. The etching of the sacrificial layer releases the structure to complete the production of this element. The materials of the sacrificial layer used are polymer materials (photoresist), polycrystalline silicon (poly-Si), and amorphous silicon (amorphos Si). Although these materials are compatible with the integrated circuit manufacturing process, they are not directly taken from the standard manufacturing process, but must additionally define additional steps (such as thickness) to add trouble to the manufacturing process. At the same time, when defining the shape of these sacrificial layer materials, s must also consider the slope of its edges (sidewa 1 1), to overcome the step span that the thin-film metal wires fabricated above and the surroundings may face when electrically connected. (Step coverage) disconnection problem, usually this problem

Page 5 414931 V. Description of the invention ¢ 3) The problem can be solved by thermal reflow (r e f 1 ow) or adjusting the active ion etching (R I E) parameter setting to obtain a beveled edge to facilitate the wire crossing. However, the sacrificial layer with beveled edges also sacrifice the area of a part of the suspended sheet, thereby reducing its filling rate.

As for the selection of the sensing material, in addition to the consideration of the high temperature coefficient of resistance, the I / f noise of the material itself is another important factor. The currently used sensing materials are: vanadium oxide (V Ο X), polycrystalline silicon (ρ ο 1 y-S i), amorphous silicon, titanium (Ti), and platinum (Pt). Among them, the temperature coefficient of resistance of hafnium oxide is as high as 2% / ° C at room temperature, which is four to ten times that of metal materials such as aluminum, titanium, and platinum. Vanadium oxide is most commonly used for this because of its high temperature coefficient of resistance. Type sensor. However, the vanadium oxide material does not match the integrated circuit manufacturing process, so the part of the infrared sensor to be manufactured needs to be manufactured separately from its related integrated circuit part (such as metal oxide semiconductors, etc.), so that the entire The manufacturing process is complex and costly, and the production of this material requires precise control to obtain stable film quality and composition, and the I / f noise of its material is also higher than that of general metals. As for the polycrystalline silicon material or amorphous silicon material commonly used in general integrated circuit manufacturing processes, although it has the advantage of matching the integrated circuit manufacturing process and can reduce manufacturing costs, the 1 / f noise of polycrystalline silicon materials and amorphous silicon materials is too high. High, the results applied to infrared sensors are not good. Titanium infrared thermal sensors are the most common metal materials used for cutting. Although the temperature coefficient of titanium film resistance is only 0.23% / ° C (compared to (Vanadium oxide is only about one tenth of that), however, titanium metal itself is compatible with integrated circuit manufacturing processes, and the 1 / f noise of metal materials is much lower than other semiconductor materials.

5. Description of the invention on page 6 (4) (including vanadium oxide (0.222WK-lcm connected to the wire for conduction). The ratio (s) of the sensing element is fully matched to the thermal characteristics and the resistance will be better. The infrared enhancement of the red animal layer need not be simplified. The root-related red is related to the igna on the bottom comprehensively, so that its temperature is for the purpose of improving the gold. In this infrared, the infrared thermal line is used. The external line element uses the external line heat accumulation volume (414931, polycrystalline silicon, etc.), plus the low thermal conductivity of titanium itself1), which makes it effective as a connection circuit above the slender legs supporting the floating plate. The advantage of reducing the solid thermal profile of the sensing element makes the overall noise to noise ratio (S / N) of the titanium infrared thermal sensor not fc or the above-mentioned oxygen 4 and it is easy to manufacture based on materials and integrated circuit manufacturing process. End is easier to manufacture. However, if it can improve the shortcomings of the lower temperature coefficient of resistance without affecting the correlation of the components, the choice of other metal materials that are higher and compatible with the integrated circuit is the performance of the infrared thermal sensor. [Summary and Summary] The main object of the invention is to provide a method for manufacturing a linear thermal sensor array element with integrated circuit, which is compatible with the integrated circuit and has a high temperature coefficient of the sensing material and the characteristics of the element. Another object is to provide a method for manufacturing a detector array element compatible with the integrated circuit manufacturing process, which uses a filling rate of a sacrificial layer design to reduce the layout area, and the aluminum pad (I / O of the sacrificial circuit element) pad) manufacturing process to define and make the entire infrared sensor manufacturing process more objective. The present invention provides a method for manufacturing a sensor array element that is integrated with the integrated circuit manufacturing process, and uses the metal layer above the infrared element circuit element as a Sacrifice of Infrared Sensor

Page 7 414931 V. Description of the invention (5) Use the integrated circuit flattening technology to make the structural material of the sensing element suspension sheet, use metal aluminum or aluminum alloy to make the sensing resistance and use low thermal conductivity titanium or Titanium alloy is used as the connecting wire between the sensing element and the circuit, making the entire infrared thermal sensor process completely compatible with the integrated circuit process, and increasing the filling rate of the infrared element to reduce the layout area. The detailed technical content and embodiments of the present invention are described below with reference to the drawings: [Illustration of the drawings] FIG. 1 is a top view of a single infrared thermal sensor. Fig. 2a is a cross-sectional view of a wafer cut along the dotted line aa after a sacrificial layer has been formed on a substrate having integrated circuit elements and metal interconnects. Figure 2b is a cross-sectional view of a wafer after a first dielectric layer is deposited on the entire wafer surface. Figure 2c is a cross-sectional view of a wafer on which a rhenium or titanium alloy metal layer and a Shao or Shao alloy metal layer are defined and etched to form a sense resistor and a lead connecting wire. Figure 2d is a cross-sectional view of a wafer formed with a photoresist layer overlying the sensing resistor to remove the inscription of the legs or the metal layer of the alloy. Figure 2e is a cross-section of a wafer after a second dielectric layer is deposited on the entire wafer surface. Figure ϋ Figure 2f is a cross-sectional view of a wafer after a black body layer is formed on the wafer surface. Figure 2g shows the second dielectric layer and the first dielectric layer on the wafer.

414931 V. Description of the invention (6) Define the cross-sectional view of the wafer after etching to form at least one contact window and expose the sacrificial layer. Figure 2h is a cross-sectional view of the wafer after the sacrificial layer is removed from the wafer. Figure 3 is a measurement data chart of the temperature coefficient of resistance of aluminum silicon copper. FIG. 4 is a cross-sectional view obtained by cutting the wafer along the broken line bb direction. Fig. 5 is a diagram showing the minimum filling rate versus element design criteria for the infrared thermal sensor array element made by the present invention. [Detailed description of the invention] Please refer to "Fig. 1", which is a schematic top view of a single infrared thermal sensor. The suspension sheet 6 of the infrared component is supported by two elongated legs 7 and connected to the surrounding semiconductor substrate 1. The suspension structure is manufactured through a defined contact window 11 to remove the sacrificial layer (not shown) at the bottom to Complete this highly thermally insulated structure. In order to explain the manufacturing process of the suspension structure in detail, the "Figure 1" is cut along the dotted line aa direction to obtain a cross-sectional view of each step as shown in "Figure 2a ~ Figure", wherein the details of each of the foregoing steps are detailed below : First, an integrated circuit element 2 related to an infrared element is manufactured on a semiconductor substrate 1. After the integrated circuit element 2 is manufactured, a metal interconnection of the integrated circuit element 2 is further produced. The metal interconnect, the last intermetal dielectric layer (IMD) 3 is covered with the last metal layer, the entire integrated circuit manufacturing process is omitted. Omit] the dielectric protection layer (passivati ο η) above the last metal layer. To facilitate the production of subsequent sensing elements. In the present invention, the last metal layer is defined and etched. Except for a part reserved as an input / output pad of the circuit (I / 0 p a d) (not shown), the rest are defined as infrared sensors.

Page 9 414931 V. Sacrifice layer 4 of the invention description (7), please refer to "Figure 2a", which is a wafer after forming a sacrificial layer on a substrate that already has integrated circuit elements and metal interconnects. Section view. The step of defining the last metal layer of the metal interconnect to form a sacrificial layer 4 on the substrate is a standard step included in the integrated circuit manufacturing process. It only needs to be defined on the photomask along with the input and output aluminum pads. Additional thin film deposition and photolithography processes are required, and many process steps can be omitted. After a sacrificial layer 4 is formed on a substrate 1 having integrated circuit elements 2 and metal interconnects, a first dielectric layer 5 having a flat surface is deposited on the entire wafer by an etchback technique. Please refer to "Figure 2b", which is a cross-sectional view of a wafer after a first dielectric layer is deposited on the entire wafer surface. The reason for using the money-back engraving technology is that the wafer surface has many protruding transistor gates, metal interconnect layers, sacrificial layers 4 or shims before the first dielectric layer 5 is deposited, so the first coating is applied. If the wafer surface after the dielectric layer 5 is not flattened, it will have undulating steps, so that the sensing resistance of the infrared element will be disconnected due to steps across different heights, so further use of The planarization process planarizes the wafer surface. The technique for flat etchback in the present invention is a standardized step in the sub-micron integrated circuit manufacturing process, but it was first defined when manufacturing this type of device. The steps are as follows (not shown): firstly, a first dielectric layer 5 is deposited on the substrate 1 and the sacrificial layer 4 by a spin-on method. The first dielectric layer 5 may be a general spin-on method. For cloth-shaped glass (spi η-ο ng 1 ass) or low-k polymer, spin-coating the first dielectric layer 5 on the wafer surface still has undulations, and then returns # 刻 此 第一 电 层 5, to obtain a flat surface, of course, the aforementioned etch back step also

Page 10 414931 V. Description of the invention (8) may include chemical mechanical polishing (CMP). After the first dielectric layer 5 having a flat surface is deposited on the wafer surface, a titanium metal or a titanium alloy is then deposited on the first dielectric layer 5, and then a Lu or Ming alloy metal is deposited on the aforementioned silicon or titanium. On the alloy metal layer, this titanium and aluminum bimetal thin film deposition step is actually a standard step for aluminum wiring in integrated circuit factories at present. The difference is only the definition of thickness, so it can fully meet the requirements of Gongwei. To define the aforementioned metal alloy layer or metal alloy layer, the steps are: coating a photoresist layer on the metal alloy layer or metal alloy layer, and then removing the mask or charm by defining a mask. The alloy metal layer and the titanium or titanium alloy metal layer below it, and finally the photoresist layer is removed, thereby forming a layer consisting of a titanium or metal alloy layer and a metal alloy layer on the first dielectric layer 5. The sensing resistor 61 is connected to the supporting wire 7 as shown in "Figure 2c", which is defined by etching the titanium or titanium alloy metal layer and the aluminum or aluminum alloy metal layer on the wafer to form a sense. Measure the cross-section of the wafer with the resistance and the lead wire. The present invention uses a metal inscription or an alloy as a sensing material to make a sensing resistor. Taking aluminum silicon copper as an example, the temperature coefficient measurement data is shown in "Figure 3". According to the measurement data in "Figure 3", the temperature coefficient of the metal aluminum silicon copper is greater than 0.4% / ° C, which is larger than the temperature coefficient of the conventional metal titanium film (only 0.23% / ° C). Many, so the response characteristics of infrared thermal sensors made with aluminum or aluminum alloy as the sensing material (the temperature coefficient of aluminum or aluminum alloy is similar to that of aluminum silicon copper) have better characteristics than other metals . More importantly, metal aluminum or aluminum alloy is a common and compatible material in the integrated circuit manufacturing process. Using aluminum or aluminum alloy as the sensing material can make the sensing resistance

Page 11 414931 5. The invention (9) is compatible with the integrated circuit manufacturing process, which simplifies the manufacturing process of the infrared thermal sensor and reduces the cost. In addition, in order to increase the resistance value of the sensing resistor, so that most of the resistance load (10ading) does not fall on the resistance of the connecting wires outside the sensing element, the thickness of the titanium metal is preferably less than 0.2 microns; aluminum or aluminum The thickness of the alloy metal is also preferably less than 0.2 micrometers, or sub-micron technology is used to make a narrower sense resistor, or a combination of the two is used to make it. On the first dielectric layer 5, a sensing resistor 61 and a leg 7 composed of a drinking or titanium alloy metal layer and a metal or aluminum alloy metal layer are formed, and then the aluminum or aluminum alloy of the leg 7 is removed. Metal layer. Please refer to "Figure 2d", in order to remove the aluminum or aluminum alloy metal layer of the leg 7, but retain the aluminum or aluminum alloy metal layer of the sensing resistor 61, a photoresist layer 8 is formed by a photoresist process to cover the The area of the sensing resistor 6 and other aluminum or aluminum alloy metal not located above the leg 7 exposes the leg 7. The photoresist layer 8 is used to protect the sensing resistor 61 and other inscriptions that are not located above the leg 7 or:! Lu alloy metal, the selective money with a high #etch rate difference between Shao or Shao alloy metal and Qin metal The part of the metal layer of Shao or Shao alloy is etched and removed, so that only 7 part of metal layer of Chin or Chin alloy is left on foot 7. The main composition of this silver engraving solution is phosphoric acid, acetic acid, and nitric acid. Aluminium or aluminum alloy can be etched quickly (approximately 2 microns per minute) by mixing in an appropriate ratio. However, it has a very low silver engraving rate on metal. Orming alloy metal and Chin or rhenium alloy metal have good #etch selectivity. The photoresist layer 8 is removed after the shaw or metal alloy layer portion of the foot 7 is removed. At this time, the surface of the wafer is formed with a sensing resistor 61 composed of a metal alloy layer or metal alloy layer and a metal alloy layer or metal alloy layer, and a foot 7 composed of a titanium or titanium alloy metal.

Page 414931 V. Description of the invention (ίο) Since the infrared thermal sensor mainly transfers heat to the surrounding heat sink substrate through the foot in a vacuum environment, the thermal conductivity of the material of the foot is in a vacuum environment ( < The thermal conductivity characteristics of the infrared device of 1 0-2 Torr) have a decisive influence. The thermal conductivity of titanium metal is only 2 2 W / m _ ° C, which is very small (the thermal conductivity of aluminum silicon copper is greater than 300 W / m-° C). Using titanium as the material of the feet can reduce infrared rays The solid thermal conductivity of the component. The process method provided by the present invention is to form a foot made of a titanium or titanium alloy metal (the aluminum or aluminum alloy metal layer part of the foot is removed in the process design) to obtain good thermal conductivity characteristics.

Please refer to "Fig. 2e" again. A sensing resistor 61 composed of an aluminum or aluminum alloy metal layer and a titanium or titanium alloy metal layer is formed on the wafer surface, and a titanium or metal alloy layer is formed on the wafer surface. After forming the supporting leg 7, a second dielectric layer 9 is deposited on the entire wafer surface as a passivation layer. The second dielectric layer 9 can be made by the aforementioned planarization technology or a general deposition protection method. The material is a low-temperature silicon oxide material or a low-temperature nitride silicon oxide commonly used in integrated circuit manufacturing processes. The material of nitride may be the same as that of the first dielectric layer 5. After depositing a second dielectric layer 9 on the wafer surface, a black body layer 10 is then formed on the second dielectric layer 9, as shown in FIG. 2f, which is formed on the wafer surface. A cross-sectional view of a wafer behind a blackbody layer. The method for forming the black body layer 10 includes the following steps (not shown): first depositing a black body material layer on the second dielectric layer 9, the black body material may be gold black, white black gold, nickel chromium or titanium. A photoresist layer is coated on the black body material layer. Then hood

Page 13 414931 Opening response phase-I 6 electrical resistance sensing and blackening of the part β- 咅 11) except fv to explain that the black resistance to light is clear and complete use of 'sharpness or suppression of light; This shot is the reddest after the radiation has gone off-line. The 10 shots in the body are taken in black to absorb the 10-layer layered body and 9 layers of dielectric on the square system. The βτ vertical opening 10 is removed and removed. ) -Ο f 1 of layer t-body f 1 '' is: (1% complete stripping 4th 4 4th layer dielectrics please refer to the 2nd, at least as far as the window contact sacrifice should be exposed The upper round crystal pair of the second dielectric layer is shown in Figure 61. The violent resistance 'electrical window touch sensing connection' is less than 11 to the window into contact shape and formed into a rear shape. The entrance of the dielectric layer is called the sacrificial layer of the sweet electricity and the method of cutting is a thin dry floating or suspended method. It is carved into a surname to form a surname, which is 9%. After the layer of electricity, the dielectric layer is sacrificed. The portion of the exposed part is sacrifice to the sacrifice layer, the line of the most advanced path of the golden middle method is for the bright hair belonging to Lian Ti. The road 4 electricity ® day W body animal 4 sacrifice The layering can be divided into layers, and the materials and materials that are suitable for the production process are usually made of materials that belong to the gold or aluminum alloy. § Before making the circuit volume, the application should be described: the former acid nitrate, acid phosphorus is Γν, liquid dissolving and contacting aluminous aluminum or aluminum deacidification to empty the foot suspension ρ. Λ 咅 ^ h 2nd phase plant such as The material base and the sacrifice should be removed by J, so that it will hang β afterwards, and the bottom should be completed by the red-the line is suspended and removed! The d plate used to make or suppress the bottom mix. F thin 6 Thermal measurement of plate thin floating suspension \ tr 1 House 6 JS resistance] ^: Figure 4 measured the first induction Γ, Π. After opening t as a knife, i 6 1 hangs to the plate thin thin bb floating line At the end of the transmission, the heat map can be collected by the heat map, and the thin Γ layer floating suspension system is black. It should have internal energy heat when it is not used to measure the electrical resistance. It can be measured by the absorption. Change the value of resistance by the value of resistance. Page 14 414931 V. Explanation of the invention (12) Because the sacrificial layer is finally removed, a part of the infrared element is suspended (that is, the area of the sacrificial layer corresponds to the area). (The suspended sheet and foot area of the infrared element), so the sacrificial layer defines the infrared The structural dimensions of the line components. Using the process design of the present invention, the entire manufacturing process can be completely matched to the existing integrated circuit. Circuit factory process, so it can be adjusted by a process in the factory (only in the thickness of the deposit, so it is quite equivalent Easy) to get the desired result, so it can be produced using advanced sub-micron processes, which is better than other currently known technologies. Therefore, the fill percentage of the infrared element can be greatly improved. Please refer to "Figure 5", which is a graph of the minimum fill rate of the infrared thermal sensor array element made by the present invention versus the design rule of the element. The area size of the pixel used is 50'50 square micrometers. In the process of 0.35 micrometers, the filling rate of the present invention can be as high as 80% or more, compared with the current conventional technology. The maximum value of 70% is much higher. [Effects of the Invention] The present invention provides a method for manufacturing an infrared thermal sensor array element that is fully compatible with the integrated circuit manufacturing process. The metal layer above the integrated circuit element related to the infrared element is used as a sacrifice of the infrared thermal sensor. Layer to increase the fill rate of the infrared array element to reduce the layout area and is compatible with the integrated circuit manufacturing process. The dielectric planarization technology in the integrated circuit manufacturing process is used to fabricate the structural support material of the suspended thin plate and overcome the problem of the step crossing of the thin film sensing electrical resistance. Made of metal Chin or Chin alloy to connect the legs to the wires to reduce the solid heat conduction characteristics of the infrared component. And select the metal aluminum or aluminum alloy that is compatible with the integrated circuit and has a high temperature coefficient to make the sensing resistor.

Page 15 414931 V. Description of the invention (13) The manufacturing process of the infrared thermal sensor array element is completely compatible with the current commercial integrated circuit manufacturing process, to achieve the best system integration, increase sensitivity, and reduce manufacturing costs. [Illustration of symbols] 1 base material 2 integrated circuit element 3 intermetallic dielectric layer 4 sacrificial layer 5 first dielectric layer 6 suspended sheet 6 1 sensing resistor 7 feet 8 photoresistive layer 9 second dielectric layer 1 0 Blackbody layer 1 1 Contact window

Page 16

Claims (1)

414931 VI. Application Patent Scope 1 · A method for manufacturing an infrared thermal sensor array element compatible with the integrated circuit manufacturing process, the method includes the following steps: providing a semiconductor substrate, wherein the integrated circuit element has been formed on the substrate and Metal interconnects; define the last metal layer of the metal interconnects to form a sacrificial layer on the substrate; deposit a first dielectric layer on the substrate and the sacrificial layer; o deposit a titanium or titanium alloy metal Layer on the first dielectric layer; depositing an aluminum or aluminum alloy metal layer on the titanium or titanium alloy metal layer; defining the titanium or titanium alloy metal layer and the aluminum or aluminum alloy metal layer to form the first dielectric layer A sense resistor and a leg are formed on the electrical layer; the aluminum or aluminum alloy metal layer of the leg is removed, and the titanium or titanium alloy metal layer of the leg is left; a second dielectric layer is deposited as a protective layer; A black body layer on the second dielectric layer to absorb incident infrared rays; removing a part of the second dielectric layer and the first dielectric layer to form at least one contact window to expose the sacrificial layer; and The sacrificial layer is removed. 2 · The manufacturing method of the infrared thermal sensor array element compatible with the integrated circuit manufacturing process described in item 1 of the scope of the patent application, wherein the last metal layer of the metal interconnect is defined to form a sacrificial on the substrate The steps of the layer further include the following steps: On page 17, the six encircles into a normal form 1HMJ. T7 f specially requested 414931 Upper golden path-the last should be in the layer blocking light sacrifice-formed to the layer of the golden path 1 should be the most important part after the bottom. ' The capacity of the curtain and the resistance of the road and the system of the road order & volume and the above mentioned item 1 No. Su Guangli This special, please go to apply for the first step, the first step, the first step, the first step, and the next step. The upper layer of the die element sacrifices the array and the bottom of the device to measure the base sense. It should be hotter than the wire layer outside the electric red dielectric layer. The sacrifices and the base = ° Yu layer dielectric-the first-accumulate •• method step coating step spin 1HJ. ^^ Xiahuatan plane table which makes the layer dielectric first and etched with etch '' back to the previous one to include the first phase of the package phase one step product system to sink more electricity in the road, volume, step product method and method The construction of the above-mentioned layers of the sacrificial element Yuan 1 sacrifices the array and the bottom of the perimeter to measure the basic sense of the sensation. The speciality is to ask the line to apply for foreign power such as Hong Jie 4 The upper layer of the sacrifices should be related to the base. & 介-Chapter-Backlog: Law Step In the following column and said dielectric layer is of a first one of the second grinding-_ mechanical advantage around RESEARCH machine designed range of application such as the requested learned. The content phase is flat, and the surface is made of electricity, and the combination of titanium and titanium is included in this step. The step is to advance one by one, and the layers are more legal. The combined pieces of aluminum foot element or array of aluminum and array. The resistor and the electrical measurement layer are sensed by the thermal gold to form a gold line. The red iridium layer is layered of aluminous aluminum or Is. The layer is light-shielded: into a sudden shape. step Page 18 414931 VI. Definition of the scope of the patent application. Part of the metal layer of the metal or titanium alloy and part of the metal layer of the metal or alloy are removed to form the first dielectric layer corresponding to the region of the sacrificial layer. Sense resistors and feet; and remove the photoresist layer. 6 · The method for manufacturing an infrared thermal sensor array element compatible with the integrated circuit manufacturing process as described in item 1 of the scope of the patent application, wherein the step of removing the shaw or shaw alloy metal layer of the leg further includes the following steps And, the above · 'Resistive layer is a gold-detecting metal, which should be combined with the § Cap or aluminum-clad resistive pin optical support-the volume of the phase-to-phase circuit system and the item 6 described above. Fan Guangli, the first layer of confinement, should go to apply for Ru Ru 7 feet into the gold engraved with this gold # in addition to the aluminum to choose or choose the inscription, the foreign method to the difference to the rate of the etching method Part of the high-level layered array belongs to the group of gold, gold, gold, metal, gold, titanium, or titanium. The red is the same as the capacity of the system. The circuit volume is as described in Section 7. Fan Li Zhuan Please do like 8 choices. Choose the acid and vinegar of the middle liquid, and mix the pieces of acid and vinegar with the acid array and nitrate of the acid array and the acid-sensitive hot phosphorus line. The black body should be shaped. CLP Power's product method and Fang Zhishu's system of the first element of the first array of fan array! ^ If you have a sense of benefit, please apply for the application. The upper layer of the second layer of the dielectric layer is: Xuan _ = 口 1¾¾ This layer is formed in the lower layer, including the black barrier method and the second layer. Shaped layer Ο Page 19