2839twf.doc/008 A7 B7 五、發明説明（（） 本發明是有關於一種二極體之結構及製造方法，且特 別是有關於一種高功率蕭特基二極體（Schottky Diode)之結 構及製造方法。 --------衣-- (誚先閱讀.背面之注意事項再填寫本頁) 請參考1A〜1F圖，其繪示習知一種高功率蕭特基二 極體製造流程剖面示意圖。 首先’ S靑參照第1A圖，提供一N+基底1〇。其次，在 N+基底10上形成N·晶晶20。接著，以加熱氧化法，在N-幕晶20上，形成弟一氧化層30。接著，使用光罩和蝕刻 法’在N—磊晶20上和第一氧化層30內形成第一開口 40。 接著’請參照第1B圖’使用離子植入和驅入(Drive In) 技術’在第一開口 40下的磊晶20中，形成p+摻雜區50， 同時因矽暴露於空氣中，在P+摻雜區50上自然形成第二 氧化層60。 接著’請參照第1C圖，使用微影蝕刻法，蝕刻移除 部分第一氧化層30，形成第二開口 70。 接著，.請參照第1D圖，在第二開口 70與N·磊晶20 上，形成第三氧化層90，並且使用離子植入技術，在第二 開口 70下，形成N·井80。 接著，請參照第1E圖，使用微影蝕刻法，在N_井80 上，蝕刻部分第三氧化層90，形成第三開口 95。然後， 進行沈積並使用選擇性蝕刻，在NT井80上形成金屬矽化 物層100，例如砂化鈦。 接著，請參照第1F圖，沈積一金屬材料，例如鋁， 並使用微影蝕刻法，蝕刻部分第一金屬層110，在N+基底 3 本紙張尺^^^/fl中國國家標率（<：]^)八4規格（210/297公釐）2839twf.doc / 008 A7 B7 V. Description of the Invention (() The present invention relates to the structure and manufacturing method of a diode, and more particularly to the structure and structure of a high-power Schottky Diode. Manufacturing method. -------- Clothing-(诮 Read first. Note on the back then fill in this page) Please refer to the diagrams 1A ~ 1F, which shows how to make a high-power Schottky diode. A schematic cross-sectional view of the process. First, referring to FIG. 1A, an N + substrate 10 is provided. Second, an N · crystal 20 is formed on the N + substrate 10. Next, a thermal oxidation method is used to form an N-screen crystal 20 The second layer is an oxide layer 30. Next, a photomask and an etching method are used to form a first opening 40 on the N-epitaxial layer 20 and the first oxide layer 30. Next, please refer to FIG. (Drive In) Technology 'In the epitaxial 20 under the first opening 40, a p + doped region 50 is formed, and at the same time, because the silicon is exposed to the air, a second oxide layer 60 is naturally formed on the P + doped region 50. Next' Referring to FIG. 1C, a part of the first oxide layer 30 is removed by etching using a lithographic etching method to form a second opening 70 Next, referring to FIG. 1D, a third oxide layer 90 is formed on the second opening 70 and the N · epitaxial 20, and an ion implantation technique is used to form an N · well 80 under the second opening 70. Next, Please refer to FIG. 1E, using a lithographic etching method, to etch a part of the third oxide layer 90 on the N_well 80 to form a third opening 95. Then, a deposition is performed and selective etching is used to form the NT well 80. A metal silicide layer 100, such as titanium sand. Next, referring to FIG. 1F, a metal material such as aluminum is deposited, and a part of the first metal layer 110 is etched using a lithography etching method. ^^ / fl Chinese national standard rate (<:] ^) 8 4 specifications (210/297 mm)
2839l:wf.doc/008 '〜-------......_________________ 五、發明説明（l ) 10上方形成第一金屬層n〇。然後，使用微影蝕刻法，倉虫 刻部分第一金屬層110，則未去除的部分第一金屬餍110, 至少覆蓋金屬矽化物層100上。接著，沈積一金屬材料， 在N+基底10下形成第二金屬層115。 .請繼續參照第1F圖，說明習知上述高功率蕭特基二 極體之結構’此結構包括N+基底1〇，在N+基底下，有 第二金屬層115 ;在N+基底1〇上，有&磊晶20。在比磊 晶20中’有P+井5〇、N-井80，且P+井50在井80側邊。 在部分N-井80上’有金屬矽化物層，此兩者接面構成 蕭特基二極體。在N_磊晶20上有第一氧化層30 '第二氧 化層60、以及第三氧化層9〇，它們覆蓋未被金屬矽化物 層100所覆蓋的γ磊晶20表面。在金屬矽化物層1〇〇上， 有第一金屬層110。 綜而言之’習知技藝需使用4道微影光罩，且其製程 複雜度高。 因此本發明的目的就是在提供一種高功率蕭特基二極 體之結構及製造方法，其製程比習知少二道光罩，可以降 低製程複雜性及節省成本。 根據本發明之目的，提出一種高功率蕭特基二極體之 製造方法。首先，提供一 N+基底。其次，在N+基底上形 成一 P—晶晶。接著，餓刻部分第一氧化層，在P晶晶上’ 形成一開口。然後，在開口下和在P-磊晶中形成一 N·井’ 且N·井的底端接觸N+基底。在部分N_井上，形成一金屬 矽化物層，N_井與金屬矽化物層電性接觸。接著’在金屬 4 本紙張尺度適扣中國國家標準(匚灿）入4规格（210\297公釐） ---------{3^衣— (讀先閲讀‘背面之注意事項再硝寫本頁) 訂 2839twf.doc/008 Μ B7 五、發明説明（今） 矽化物層和部分第一氧化層上，形成一第一金屬層，且第 一金屬層電性接觸金屬砂化物層。然後，在Ν+基底下1开多 成一第二金屬層。 根據本發明之目的，提出一種高功率蕭特基二極體之 結構，此結構包括Ν+基底，在其下有第二金屬層，在其上 有Ρ_磊晶。在Γ磊晶中，有Ν·井，汴井底端接觸Ν+基底。 在Ρ—磊晶上，有第一氧化層，部份第一氧化層在部分Ν_井 上。在部分Ν·井上，有一金屬矽化物層。在金屬矽化物層 和部分氧化層上，有一第一金屬層。R井與金屬砂化物層 之接面構成蕭特基二極體。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 圖式之簡單說明： 第1Α〜1F圖是習知一種高功率蕭特基二極體之製造 流程剖面示意圖；以及 第2Α〜2D圖是本發明之一較佳實施例，一種高功率 蕭特基二極體之製造流程剖面示意圖。 圖式之標記說明： 10、120 : Ν+基底 20 ·· Ν-晶晶 30、140 :第一氧化層 40 :第一開口 50 : Ρ+摻雜區 (銷先閱讀^面之注意事項再填湾本頁)2839l: wf.doc / 008 '~ -------..._________________ V. Description of the invention (l) A first metal layer n0 is formed above 10. Then, by using a lithographic etching method, a part of the first metal layer 110 is etched by the worm, and the unremoved part of the first metal hafnium 110 covers at least the metal silicide layer 100. Next, a metal material is deposited to form a second metal layer 115 under the N + substrate 10. Please continue to refer to FIG. 1F to explain the structure of the above-mentioned high-power Schottky diode. This structure includes an N + substrate 10, and under the N + substrate, there is a second metal layer 115; on the N + substrate 10, There are & In Bileijing 20 ', there are P + well 50 and N-well 80, and P + well 50 is on the side of well 80. A metal silicide layer is provided on a portion of the N-well 80, and the interface between the two forms a Schottky diode. A first oxide layer 30 ', a second oxide layer 60, and a third oxide layer 90 are formed on the N_epitaxial layer 20, and they cover the surface of the? Epitaxial layer 20 which is not covered by the metal silicide layer 100. On the metal silicide layer 100, there is a first metal layer 110. All in all, the ‘knowledge’ technique requires the use of 4 lithographic masks, and its process complexity is high. Therefore, the object of the present invention is to provide a structure and manufacturing method of a high-power Schottky diode, the manufacturing process of which is less than that of two masks, which can reduce the complexity of the manufacturing process and save costs. According to the purpose of the present invention, a method for manufacturing a high-power Schottky diode is proposed. First, an N + substrate is provided. Second, a P-crystal is formed on the N + substrate. Next, a part of the first oxide layer is etched to form an opening in the P crystal. Then, an N · well 'is formed under the opening and in the P-epitope, and the bottom end of the N · well contacts the N + substrate. A metal silicide layer is formed on part of the N_well, and the N_well is in electrical contact with the metal silicide layer. Then 'Metal 4 paper size deducts the Chinese national standard (匚 Can) into 4 specifications (210 \ 297 mm) --------- {3 ^ 衣 — (Read first read the notes on the back Write this page again) Order 2839twf.doc / 008 Μ B7 V. Description of the invention (today) A first metal layer is formed on the silicide layer and part of the first oxide layer, and the first metal layer is in electrical contact with the metal sand Floor. Then, a second metal layer is formed under the N + substrate. According to the purpose of the present invention, a high-power Schottky diode structure is proposed. This structure includes an N + substrate, a second metal layer underneath it, and a P_ epitaxial crystal thereon. In the Γ epitaxy, there is an N · well, and the bottom end of the well is in contact with the N + substrate. On P-epitaxial, there is a first oxide layer, and part of the first oxide layer is on part of N_ well. On some N · wells, there is a metal silicide layer. On the metal silicide layer and the partial oxide layer, there is a first metal layer. The interface between the R well and the metal sand layer constitutes a Schottky diode. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description as follows: Brief description of the drawings: FIG. 1F is a schematic cross-sectional view of a manufacturing process of a high-power Schottky diode; and FIGS. 2A to 2D are cross-sectional schematic views of a manufacturing process of a high-power Schottky diode. . Explanation of the marks of the drawings: 10, 120: Ν + substrate 20 · Ν-crystal 30, 140: first oxide layer 40: first opening 50: ＋+ doped region (Fill in this page)
本紙张尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 1 好浐部中"打2?-^u--':T·消於合竹"卬5 A7 2839twf.doc/008 五、發明説明（A ) 60、170 :第二氧化層 70 :第二開口 80 : N-井 90 :第三氧化層 95 :第三開口 100、180 :金屬矽化物層 110、190 :第一金屬層 115、200 :第二金屬層 130 : P-晶晶， ' 150 :開口 實施例 請參照第2A〜2D圖，其繪示依照本發明一較佳實施 例，一種高功率蕭特基二極體製造流程示意圖。 首先，請參照第2A圖，提供N+基底120。其次，使 用化學氣相沈積法，在N+基底120上，形成Γ磊晶130。 接著，使用加熱氧化法，在P晶晶130上，形成第一氧化 層140。然後，使用微影蝕刻法，蝕刻部分第一氧化層140， 在P嘉晶130上’形成開口 150。 其次，請參照第2B圖，使用離子植入和驅入技術， 在P—磊晶130中和開口 150下，形成乂井160，N-井160 底端接觸N+基底120，同時因矽暴露於空氣中在N·井160 上自然形成第二氧化層170。 接著，請參照第2C圖，使用氧化層鈾刻技術去除第 二氧化層170。然後，沈積一金屬鈦，在該第一氧化層和 6 本紙張尺度適用中國國家標準（.匸、5)八4規格（210'/297公釐)~^ ~ (讀1間讀^面之注意事項再填寫本頁) 衣· 訂 2839twf.doc/008 kl B7_ 五、發明説明（S ) 該Ν·井上，形成一金屬鈦層。接著，以一快速熱製程，實 施金屬矽化’在該井上，形成金屬矽化物層18〇。之後， 進行選擇性飽刻移除未反應之金屬駄層。 . 接著，請參照第2D圖，沈積一金屬材料，例如鋁， 並使用微影蝕刻法，在金屬矽化物180上，形成第一金屬 層190，第一金屬層190至少覆蓋金屬矽化物層180上。 然後’再沈積一金屬材料，在Ν+基底120下形成第二金屬 層 200。 請繼續參照第2D圖，說明本發Η月上述較佳實施例， 一種高功率蕭特基二極體之結構剖面，此結構包括Ν+基底 120 ’在Ν+基底120、下，有第二金屬層200 ;在Ν+基底120 上，有Ρ-磊晶130。在Ρ-磊晶130中，有Ν-井160，Ν-井160 的底端接觸Ν+基底120。在Γ磊晶130上，有第一氧化層 140，部份第一氧化層140在部分Ν-井160上。在部分Ν· 井160上，有一金屬矽化物層180。在金屬矽化物層180 和部分氧化層140上，有一第一金屬層190。汴井160與 金屬矽化物層180之接面構成蕭特基二極體。 由上述本發明較佳實施例可知，因本發明使用2道光 罩，較習知技藝中4道少2道，應用本發明具有，減少光罩 數目和降低製程複雜度等優點。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者’在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 ____ 7 _ 氏張尺度過川中國國家操玉Y"CNS ) Α4規格（210X297公麓）— " " (請先閱讀背面之注意事項再填寫本頁) -*V) --I n - - - n I In - - n n - n I 1^1 n ΙΊ n - - n I I h 麫於部中夾樣準而^工消贽合竹拍印^ §This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297 mm) 1 浐 部 中 " 打 2?-^ U-': T · Consumer in the bamboo " 卬 5 A7 2839twf.doc / 008 V. Description of the invention (A) 60, 170: second oxide layer 70: second opening 80: N-well 90: third oxide layer 95: third opening 100, 180: metal silicide layer 110, 190: first Metal layers 115, 200: second metal layer 130: P-crystal, '150: opening embodiment Please refer to FIGS. 2A to 2D, which shows a high power Schottky II according to a preferred embodiment of the present invention. Schematic diagram of polar body manufacturing process. First, referring to FIG. 2A, an N + substrate 120 is provided. Next, Γ epitaxy 130 is formed on the N + substrate 120 using a chemical vapor deposition method. Next, a first oxide layer 140 is formed on the P crystal 130 using a thermal oxidation method. Then, a part of the first oxide layer 140 is etched by using a lithographic etching method to form an opening 150 on the P-Jaclite 130 '. Secondly, referring to FIG. 2B, using ion implantation and drive-in technology, a well 160 is formed in the P-epitaxial 130 and the opening 150, and the bottom end of the N-well 160 contacts the N + substrate 120 while being exposed to silicon due to silicon A second oxide layer 170 is naturally formed on the N · well 160 in the air. Next, referring to FIG. 2C, the second oxide layer 170 is removed using an oxide uranium etching technique. Then, deposit a metal titanium, and apply the Chinese National Standard (. 匸, 5) 44 (210 '/ 297 mm) to the first oxide layer and 6 paper sizes ~ ^ ~ (read 1 reading Note for this page, please fill in this page again.) Order 2839twf.doc / 008 kl B7_ V. Description of the invention (S) On the N · well, a titanium metal layer is formed. Next, a rapid thermal process is performed to perform metal silicidation 'on the well to form a metal silicide layer 180. After that, selective unsaturation is performed to remove the unreacted metal rhenium layer. Next, referring to FIG. 2D, a metal material such as aluminum is deposited, and a lithographic etching method is used to form a first metal layer 190 on the metal silicide 180. The first metal layer 190 at least covers the metal silicide layer 180. on. Then a further metal material is deposited to form a second metal layer 200 under the N + substrate 120. Please continue to refer to FIG. 2D to describe the above-mentioned preferred embodiment of the present invention. A structural cross-section of a high-power Schottky diode. This structure includes an N + substrate 120, The metal layer 200; on the N + substrate 120, there is P-epitaxial 130. In the P-epitaxial crystal 130, there is an N-well 160, and the bottom end of the N-well 160 contacts the N + substrate 120. On the epitaxial substrate 130, there is a first oxide layer 140, and a portion of the first oxide layer 140 is on a portion of the N-well 160. On a portion of the N · well 160, there is a metal silicide layer 180. On the metal silicide layer 180 and the partial oxide layer 140, there is a first metal layer 190. The interface between the manhole 160 and the metal silicide layer 180 constitutes a Schottky diode. It can be known from the above-mentioned preferred embodiments of the present invention that, because the present invention uses two masks, which is two less than four in the conventional technique, the application of the present invention has the advantages of reducing the number of masks and reducing the complexity of the process. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various changes and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. ____ 7 _ The scale of the Zhang Yuchuan Chinese National Jade Y " CNS) Α4 Specification (210X297 Gonglu) — " " (Please read the precautions on the back before filling this page)-* V) --I n- --n I In--nn-n I 1 ^ 1 n ΙΊ n--n II h