TW399335B - Bipolar junction transitor of two segment operation range of high, low segment concentration - Google Patents

Abstract

This is a bipolar junction transistor of two segment operation range of high, low base region concentration. This bipolar junction transistor is manufactured on a substrate. It forms a buried layer with N type doping concentration on the substrate. Then, it forms a base region on the buried layer, which is a N type doping region. On the base region, it forms a first base region, which has P type doping concentration. The doping concentration is low. Then, it forms a second base region, which has P type doping concentration, on the first base region. Doping concentration is high. Finally, it forms a base region, which has N type doping region, on the second base region. It completes a bipolar junction transistor with two base doping concentrations.

Description

Looking for i?-^ U-Tifi Feihezhu A7 through the pouring department ----——__— B7__________ V. Description of the invention () 5-1 Field of the invention: The present invention relates to the structure design of a double-carrier transistor In particular, it relates to a bipolar transistor having two low base concentrations. 5-2 Background of the Invention: Bipolar Junction Transistor (BJT) is one of the most important semiconductor components in modern times. Therefore, a group of scientists inventing this electronic component at BellLab in the United States, Received, 'Nobel Prize in Physics,' this honor in recognition of their contribution to the future development of the electronics industry. The reason why a bipolar transistor is called a "bipolar" is that it is an electronic component that uses both the electron and the electric # carriers to conduct current. Its advantage is that it is fast, but consumes a lot of energy, so when the degree of component accumulation increases, the problem of heat dissipation becomes a major obstacle for the application of bipolar transistor. Therefore, in addition to the design of bipolar transistors in some special applications, such as high power devices (High Power Devices) and logic circuits that require high speed, bipolar transistors have been used as metal-oxide half-field-effect transistors. (Metal Oxide Semiecmduetor Field Effect Transistor, MOSFET). Please refer to the first figure, which does not show a schematic cross-sectional view of a bipolar transistor. This transistor is fabricated on a substrate 100, and an N-type doped burying is formed on the substrate 100. Layer 110, an N-type collector 13 of an N-well region is formed on the N-type buried layer 110, and a p-type base 14 of a bipolar transistor is formed on the N-type collector 130 'base contact 150 and N-type emitters 160 are formed on 2 paper scales applicable to national standards ((, NS) Λ4 specifications (210 X 297 ^^^^ ~~ ') ---- (Please read the precautions on the back first (Fill in this page again)

Jse A7 B7 V. Description of the invention (above the p-type base 140 and separating the two areas with a field oxide layer 120. The bipolar transistor described here is an NPN bipolar transistor, respectively The emitter, base, and collector of the transistor are doped with N-type, p-type, and N-type conductive impurities to form the structure shown in the first figure. Please refer to the second figure, in which the Doping Concentration vs. Depth in Bipolar Transistors. Curve A is the N-type conductive impurity doping concentration at the emitter, and Curve B is the base type? Curve C is the doping concentration of the n-type conductive impurities at the collector. Using these three doping concentrations, an NpN type bipolar transistor is manufactured. The other bipolar transistor structure is an emitter and collector p-type. Semiconductor, and the middle base is an N-type semiconductor, which is called a pNp type bipolar transistor. Generally, electron mobility is faster than holes, and p-type semiconductors are used as the base. Bipolar transistor, because a few carriers are electrons, its speed will be faster, so most Weizi transistors are all designed by Qing. The NPN type bipolar transistor will be used as an example. In fact, the operation methods of these two types of carrier transistors are similar. Just explain one of them.凊 Refer to the third figure, showing a simple junction of a bipolar transistor. The N-type semiconductor on the left is used as the emitter, and the ㈣ semiconductor 2 on the right is used as the collector. _ P-type semiconductor is used as the base. Emitter and base force Vbe bias' Positive voltage is connected to the base, Zhen f M is connected to the emitter. _ Yu bias is applied between the collectors, the positive voltage is connected to the collectors, the negative current i / main Base. Emitter output-current 1E, base and collector input respectively-electricity B and shown in the third picture _ a variety of common emitter configuration (c. Position_ Λ4 specifications (210X297 mm) J- ------- ^ > Equipment—— (Please read the notes on the back before filling this page) l · Order '• 4 A7 B7 V. Description of the invention ()

Emitter) circuit design, this circuit design can be used as a switch. When VBE is greater than a certain initial voltage value, Ic begins to increase rapidly; if VBE is less than this initial voltage value, Ic will approach zero, in other words, the Ic size of the bipolar transistor can be controlled by VBE . Please refer to the fourth figure, when VBE is greater than the starting voltage, the relationship between Ic and VCE is displayed. The above is the operation mode of a general transistor. The current-voltage curve obtained using the structure of a general bipolar transistor is as shown in the fourth figure. Generally, the base, emitter and collector used in this structure each have a doping concentration curve. There is only one Current Gain, that is, only one Saturation Region. The structure and doping concentration are adjusted to determine the operating characteristics of the transistor. 5-3 Purpose and Summary of the Invention: The present invention discloses a structure of a bipolar transistor. The base of the transistor has two doping concentrations. One has a collector of the first base region connecting element with a low doping concentration. A second base region having a high doping concentration is formed over the first base region, and an emitter is fabricated over the second base region to form a bi-carrier transistor. Utilizing the above-mentioned double-carrier transistor structure, when using a common emitter circuit design, the entire component is equivalent to an amplifier. The relationship between the collector current Ic and the voltage between the collector and the emitter VCE will appear in Of these current gains, one at a low VCE voltage (about less than 5 volts) and the other at a high VCE voltage (about more than 8 volts). 4 ^ 纸 ^ 度 诚 ili 中国 仓 家 # ^ (rNS) Λ4 specifications (210X 297 male f) (Please read the precautions on the back before filling this page) Ding A7 B7, invention description (one of the advantages of x month Yes: By using the bipolar transistor junction of the present invention, two current gains can be obtained, and the component can be used in high-voltage circuits. \] Another advantage of this & Ming is: By adjusting the present, The doping concentration of the region can change the operation of the bipolar transistor. Do not use it as a circuit switch or as a bipolar transistor. 5-4 Schematic description of the invention: Many of the objects and advantages of the invention will become easier to be understood and understood by referring to the following detailed descriptions. At the same time, please refer to the following diagrams to clarify, among them: Figure-shows the conventional technology, the type Cross-section schematic diagram of a double-carrier transistor; Figure-Figure shows the doping concentration curves of emitter, base, and collector of NpN-type double-carrier transistors in the conventional technique; the second figure shows the conventional technique Among them, a simple schematic diagram of the common emitter circuit design of the NPN type bipolar transistor; Forty-one series display the conventional technology. The bipolar transistor uses a common emitter circuit design, and the current and voltage working curves are obtained. The fifth figure shows the NPN type dual load with high and low base concentration in the present invention. Cross-sectional schematic diagram of a daughter transistor; Figure 6 ^ shows the doping concentration curves of the base, emitter, and collector of NPN type bipolar transistor with high and low base concentration in the present invention; n I— I nn · I! Nnn —l \) in II nn If T nu II n 11¾.,: ^ US. ^ (Fs read the notes on the back before filling in this page) This paper ruler 4 Shizhou China 1S House Standard 埤 (rNS) M said grid (210X297 public box) Ministry of Standards and Industry Standard Bureau p'-τ elimination processing bamboo drawing A7 ------ B7 V. Description of the invention ()-The seventh picture shows the NPN double The relationship diagram of the current and voltage of the carrier transistor 'under the design of the common emitter circuit, it has two current gains; the eighth diagram is a diagram showing the relationship between the current and voltage of the NPN type double-carrier transistor of the present invention' When the high-concentration base region of the transistor is reduced, only one current gain at high operating voltage remains; and the ninth Lines showed the relationship between current and voltage according to the present invention FIG NPN type bipolar transistor apos When reducing the width of the low-concentration base region, the transistor of this curve approximates a general bipolar transistor. 5-5 Detailed description of the invention: In the present invention, the structure of a bipolar transistor is disclosed. The base of the bipolar transistor has two kinds of doping concentration curves, which are the second base with high doping concentration. Electrode region and the first base region with a low doping concentration. The two base regions are used as a base. The structure of other collectors and emitters is the same as that of a normal bipolar electric body. . When this bipolar transistor is used as an amplifier, that is, when the common emitter circuit design (c0mm 00n Emitter) is used, there are two graphs of the relationship between the emitter current c and the VCE voltage. The current gains are respectively located in the dust and low operating voltage regions, that is, in the working electric house intervals of less than 5 volts and greater than 8 volts, respectively. With this type of double-carrier electric crystal structure with high and low base concentration, the current gain will be present in the general low operating voltage, and the current gain will be generated in the working dust. Therefore, this transistor can be used in high voltage circuits or smart power control systems. 6 This paper distorts 彡, 彡: material (" ^ 7X4 specifications (2 "0X297 public 7 J -------- I. (Please read the precautions on the back before filling in this page j

A7 -------- B7 V. Explanation of the invention ^ '' " " " ~ Please refer to the fifth figure, which shows the intention of a bipolar transistor. Above the base plate 100, the base plate is:

-Type Shi Xijing, forming a -N-type doped buried layer 11〇P on the substrate 100

The N-type collector 13 in the well region is formed in the first base region 142 of the N-type transistor in the N-type doped buried layer 909, which is formed in the N-type collector 130 dual-loaded first-base region 142. For -P well area. A second base region 14m is formed in the _th base region 14 $, and the second base region 141 is also the same in θ, the P well region. In the present invention, the next day the doping concentration of the second base region 141 is concentrated, the two regions form a base with two doping concentrations based on the doping concentration of the first base region 142. a In a preferred embodiment, the first base region 142 is formed by using a synchronous doping chemical vapor deposition process (In_Situ Doped Chemical Vapor Deposition) in the N-type doped buried layer 11〇. On the other hand, a p-type heterogeneous premature stone layer is directly formed. Generally, this process technology can be used to control the doped concentration in the monocrystalline stone layer to form a low-doped concentration layer. region. In addition, the method of forming the second base region 141 is to use an ion implantation process (Ion Implantation) to dope the single crystal layer with conductive impurities to increase the doping in the single crystal silicon layer. Impurity concentration, forming a high doping concentration region. Please continue to refer to the fifth figure. The base contact 150 and the N-type emitter 160 are formed on the P-type base 140, and the two regions are separated by a field oxide layer 120. The bipolar transistor described in this preferred embodiment is a type of NPN bipolar transistor. The emitter, base, and collector of the transistor are respectively mixed with N-type, P-type, and N-type. A conductive impurity of the type 'forms the structure shown in the fifth figure. This paper is used in the standard of Chinese paper ® house standard (('NS) Λ4 size (210X 297) 浼 J ------------ {Please read the precautions on the back before filling this page} ίOrder The " Ministry of Foreign Affairs ^ Uc-T Consumer Assets Co., Ltd. prints and issues A7 B7 in the ministry if. Μ -Τ 消 ji- person η a. Printing 5. Description of the invention (please refer to the sixth figure, in this figure It shows the relationship between doped concentration and depth in a bipolar transistor. The curve shows the doping concentration of N-type conductive impurities at the a pole, and the curve m is the second base region. = Type conductive impurity doping concentration, the curve is the p-type conductive impurity doping concentration of the first-base region 142, and curve C is the collector ❹-type conductive impurity doping concentration. -A Qing-type bipolar transistor. When ... In the sixth figure, the doping concentration curve shown by Hu Jin is only one 亍: It is used to explain the second base region ⑷ and the first base region 142. Change the relationship between degrees. ^ The structure used by Heming Erming can also be used in another bipolar transistor structure, the emitter and collector semiconductors, and the base ㈣Ν is a bridging type double-transistor transistor. Although it is described in the detailed description of the present invention that the PN type double-transistor is used as a practical implementation, in fact, the operation method of this crystal is roughly similar to the structure, only f says ㈣ 中 _ 种 $ 心 = give a collector current 1C vs. collector-emitter electric soil 1. The circuit diagram of the relationship between this current and the electric god (CG surface. In the case of nE reading ㈣ Next, it is the circuit design of = pole. When-雔 Gongfu 啻 said that the unbiased τ transistor operated in this way, the graph of the relationship of this element 'C 元 丨 L to VCE voltage. The invented degree of the double-carrier electric w ™ ㈣ has a very strong listening base, which means that at IV: the current gain (CUrrem is also called " V curve has two turning points, respectively located in the area of the ancient n operating voltage by the A knife刎 is located between the working voltage and low B. Generally speaking, there are two current-increasing crystals, the pedestal-yituo T-tunxian · h doublet

The doping concentration of the base region 141 is between lx㈣ to 3x 8 (please read the precautions on the back before filling this page). ---- ^-order A7 B7 V. Description of the invention (between 1016 / cm3, The doping concentration of the first base region 142 is between 4 × 10 × 5 and 8 × 1015 / cm3; the width of the first base region 141 is between 8000 angstroms and the width of the second base region 142. Money is between the measurement and the deletion of Angstroms. Using a two-carrier transistor with two base concentrations (mpioar Transis⑽ 'can get two current gains, the reason is that the current of the two-carrier transistor The gain is related to the width of the base. For the double transistor of the present invention, the veE voltage is gradually increased, and under low voltage operating conditions (below about 5 volts), the operation of the entire component is not large. The method uses the first base region and the second base region as a base, so at this time, under the condition of low voltage, _ current gain will be obtained; under high voltage working conditions (about 8 volts or more), a large empty area will appear in the base part ① 叩 ㈣Plus M_) ' Covering to the-base region, so that the component's operating conditions, only using the-base region as the base of the element, that is, using a region with a higher concentration as the base 'for reading the width of the base. Generates a second current gain. Month / See the eighth figure 'shows the relationship between another Ic current and I voltage. * Concise bipolar transistor with high and low base concentration, reducing the second base region ( That is, the width of the high-doped concentration region), and the width of the first base region (also the low-doped desert region) is increased. Generally speaking, the first base region is between 0 and 15 Å. Between, the width of the second base region is: \ 3_Angle 'the impurity concentration of the first base region is between lxlOI5 10 / cm, and the impurity concentration of the second base region is In between, the component will only have a current gain, and the electricity and muscle gains will be in the high power operating voltage, I will be in the low power operating voltage, and the collector will be charged.

Q Paper Size ^ ^ Pack ------ ^ Order ----,-1 ^. (Please read the precautions on the back before filling out this page) B7 B7 The Central Standards Bureau of the Ministry of Economic Affairs Cooperative printed 5. Description of the invention () The current Ic is close to zero, that is, the current gain of the entire component occurs under the condition of high VCE voltage, and its working state is similar to a circuit switch, only when the VCE voltage is greater than Collector current will flow only at a certain value. Please refer to the ninth figure, which shows a relationship between the collector current ic and the voltage vCE. In the bipolar transistor of the present invention, the width of the first base region (ie, the region with a low doping concentration) is reduced, and the second base region (the region with a high doping concentration) is used as the bipolar transistor. The relationship between the base current of the element and the collector current Ic of the device versus the VCE voltage is the same as that of a conventional bipolar transistor, and the current gain will be generated at a low VeE voltage. Based on the above discussion, it can be known that in the base of the bipolar transistor, a region with two doping concentrations is formed. By adjusting the width of the two regions, or using high or low concentration doping In this region, the current gain of the transistor can be adjusted, and even in the same transistor, a high VCE voltage current gain and a low veE voltage current gain are obtained. The present invention has been described above with reference to the preferred embodiments, and those skilled in the art can make some modifications and modifications without departing from the spirit of the present invention. Field-specific. For example, the specific embodiment used in the present invention is an NPN bipolar transistor, but it is not limited to such a transistor. The PNP bipolar transistor can also use the structure of the present invention to achieve the desired result. efficacy. This paper size applies the Chinese National Standard (CNS) Λ4 gauge (210 > < 2 men's film) (Please read the precautions on the back before filling this page.

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Claims (1)

A8 B8 C8 D8 Announced patent scope of this application • —A bipolar transistor with two base concentrations, including at least: — a semiconductor substrate; — a buried layer with —first — polarity, located on the semiconductor substrate -li., —collector 'has the first polarity and is located above the buried layer; the first base region has a second polarity and is located above the collector, wherein the first base has a first Doping concentration; 〃, the first base region has a second polarity and is located above the first base region, wherein the second base region has a second doping degree, and the second doping The concentration is greater than the first doping concentration; and an emitter 'has the first polarity and is located above the second base region. 2 'The bipolar transistor according to item 1 of the scope of the patent application, wherein the first polarity is N-type and the second polarity is p-type. ^ 3 · If the scope of patent application is 帛! The bipolar transistor described in the item is P-type, and the second polarity ^ -type. I younger pole 4 · If the scope of patent application is 帛! The bipolar transistor described in the above item, wherein the doping concentration of the first US pole region is between 4X10 "and 8xioWcm3. 5. The bipolar transistor according to item 1 of the patent application, wherein The doping concentration of the second pole region is between 1X1016 and 3X10i6 / cm3. Soil 11 -------------- (Please read the precautions on the back before filling this page) The standard for printing wood and paper by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Foreign Affairs of the People's Republic of China (CN ^ 4k ^ (210X297 ^ 57) printed by the Consumer Cooperatives of the Central Procurement Bureau of the Ministry of Economic Affairs. A8 B8 C8 D8 The bipolar transistor described in item i, wherein the width of the _ base region is between 5000 and 8000 Angstroms. 7_ The bipolar transistor described in item i of the patent application range, wherein the first The width of the two base regions is between 2500 and 3000 angstroms. 8. The bipolar transistor as described in the scope of the patent application (i), further comprising a base contact having the second polarity and formed in the Above the second base region. 9. Double load as described in the scope of patent application (1) A transistor, in which the first base region is a well region, and the second base region is another well region formed in the first base region. Ίο. A double-carrier electricity as a switch The crystal includes at least: a semiconductor substrate; a buried layer having a first polarity above the semiconductor substrate; a collector having the first polarity above the buried layer; an A base region Has a second polarity and is located on the collector, wherein the first base region has a first doping concentration; the first base region has a second polarity and is located on the first base region ^ Wherein the second base region has a second doping concentration, and the third doping concentration is greater than the first doping concentration, the width of the second base region is then smaller than the width of the first base region; And ^ --- ： ----- ^ 叫 装 ------ Order ---- Ί 1Lu! (Please read the precautions on the back before filling out this page) 12 Α8 Β8 C8 D8 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 6. Patent application scope emitter with the first polarity, located in the second base region 11. Double-loading as described in item 10 of the scope of patent applications The daughter transistor, wherein the first polarity is N-type and the second polarity is p-type. 12. The bipolar transistor according to item 10 in the scope of the patent application, wherein the first polarity is P-type and the second polarity is N-type. 13 'The bipolar transistor according to item 10 of the scope of application for a patent, wherein the doping concentration of the first base region is between 1 × 1015 and 3xio5 / cm3. 14. The bipolar transistor described in item 10 of the scope of the patent application, wherein the doping concentration of the second base region is between 1 × 1016 and 3xio6 / cm3. 15 _ The bipolar transistor described in claim 10 of the patent application, wherein the width of the first base region is between 10,000 and 15,000 angstroms. 16. The bipolar transistor according to item 10 of the patent application, wherein the width of the second base region is between 2500 and 3000 Angstroms. 17_ The bipolar transistor described in claim 10 of the patent scope further includes a base contact having the second polarity and formed on the second base region. 18. The bipolar transistor described in item 10 of the scope of patent application, wherein the first base region is a well region, and the second base region is a 13-sheet paper formed on the first base electrode. National Standard of the Country (CNS) Α4 · _ (21QX297 public fantasy (please read the precautions on the back before filling out this page)-installed · 8 8 8 8 Central Standard of the Ministry of Economic Affairs of another well in the area covered by the ABCD Printed by the Bureau's Consumer Cooperative (please read the precautions on the back before filling out this page). Binding and binding 14 This paper size applies to China National Standard (CNS) A4 (210X297 mm)