TW392208B - Dynamic photo mask exposure system and method of producing same - Google Patents
Dynamic photo mask exposure system and method of producing same Download PDFInfo
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- TW392208B TW392208B TW087117529A TW87117529A TW392208B TW 392208 B TW392208 B TW 392208B TW 087117529 A TW087117529 A TW 087117529A TW 87117529 A TW87117529 A TW 87117529A TW 392208 B TW392208 B TW 392208B
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000011159 matrix material Substances 0.000 claims abstract description 15
- 238000001514 detection method Methods 0.000 claims abstract description 8
- 230000005540 biological transmission Effects 0.000 claims description 45
- 238000003860 storage Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 7
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 239000000779 smoke Substances 0.000 claims 1
- 238000012905 input function Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 7
- 238000005286 illumination Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010061218 Inflammation Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004054 inflammatory process Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
五、發明說明(1) 本發明係有關於曝光系統’且更特別地係有關於曝光 工件以定義一圖案之改進方式和裝置。 比較先前技藝的缺點在於傳統的步進機使用一固定鉻 (Cr)圖案的二元光罩。無缺點且具有精密關鍵尺寸的光罩 是非常難製造。對於必要的塗層通常需要許多光罩以產生 一晶片。為使所使用的照相平版過程最佳化,在不同的時 間,光罩的少許改變是必需的。更進一步,許多晶圓需要 步進機參數的最佳化例如聚焦、能量、N A (數值孔徑)和劑 量0V. Description of the Invention (1) The present invention relates to an exposure system 'and more particularly to an improved method and apparatus for exposing a workpiece to define a pattern. The disadvantage compared with the prior art is that the conventional stepper uses a binary mask with a fixed chromium (Cr) pattern. Masks that are flawless and have precise critical dimensions are extremely difficult to manufacture. Many masks are usually required for the necessary coatings to produce a wafer. To optimize the photolithography process used, slight changes in the reticle are necessary at different times. Furthermore, many wafers require optimization of stepper parameters such as focus, energy, NA (numerical aperture), and dose.
Pfauler et al. "High-Throughput Optical Direct Write Lithography" ’Solid State Technology (June 1997),pp. 175-176 ’178,180 ’182 描述一直接寫照相 平版系統,使用可程式化相位調變之空間光調變器(SLM) 系統,其中影像從SLM被反射至一半導體晶圓。空間光調 變器包含一陣列的矩形電極,其在頂部具有反射性、可變 形的粘彈性塗層。SLM係用做一光學系統中的一平面鏡。Pfauler et al. &Quot; High-Throughput Optical Direct Write Lithography " 'Solid State Technology (June 1997), pp. 175-176' 178, 180 '182 describes a direct writing photolithography system using programmable phase modulation. A spatial light modulator (SLM) system in which an image is reflected from the SLM to a semiconductor wafer. The spatial light modulator contains an array of rectangular electrodes with a reflective, deformable viscoelastic coating on top. SLM is used as a plane mirror in an optical system.
Reise et al.的美國第5, 701,185 號專利"Spatial Light Modulator Assembly for Adapting a Photographic printer to print Electronic Images" 描述一印相機中S L M之利用。U.S. Patent No. 5,701,185 to Reise et al. &Quot; Spatial Light Modulator Assembly for Adapting a Photographic Printer to Print Electronic Images " describes the use of SLM in a print camera.
Erhardt 的美國第4,846,694 號專利"Computer Controlled Overhead Projector Display"其中有一電 腦控制一透射(透明或半透明)液晶顯示之上方投影顯示 器。Erhardt's U.S. Patent No. 4,846,694 " Computer Controlled Overhead Projector Display " includes a computer controlled overhead projection display over a transmissive (transparent or translucent) liquid crystal display.
C:\Program Files\Patent\0516-3912-E.ptd第 4 頁 五、發明說明(2)C: \ Program Files \ Patent \ 0516-3912-E.ptd page 4 5. Description of the invention (2)
Stein 的美國第3, 824, 604 號專利"Alphanumeric Print System Employing Liquid Crystal Matrix"描述 一使用LCD陣列之映像系統。Stein, U.S. Patent No. 3,824,604 " Alphanumeric Print System Employing Liquid Crystal Matrix " describes an imaging system using an LCD array.
Hornbeck 的美國第 5,028,939 號專利"Spatial Light Modulator System"描述一SLM。 2&11^〇11116131.的美國第5,083,854號專利 Spatial Light Modulator with Improved Aperture Ratio"描述一具有改善透光孔徑比之SLM。Hornbeck U.S. Patent No. 5,028,939 " Spatial Light Modulator System " describes an SLM. 2 & 11 ^ 〇11116131. U.S. Patent No. 5,083,854. Spatial Light Modulator with Improved Aperture Ratio " describes an SLM with improved transmission aperture ratio.
Komuma 的美國第5, 576, 562 號專利"Solid-stateKomuma U.S. Patent No. 5,576,562 " Solid-state
Imaging Device" 描述一使用排列在矩陣陣列和CCD中之 光電偵測器的成像裝置。Imaging Device " Describes an imaging device using photodetectors arranged in a matrix array and a CCD.
Watanabe 的美國第 5, 629, 1 1 3 號專利"PhotomaskWatanabe U.S. Patent 5, 629, 1 1 3 " Photomask
Used by Photolithography and a Process of Producing Same" 描述一光罩和其製作過程。 一動態光罩曝光系統(和一對應方法)包括一工件支 架、一曝光光束的光源、和一具有正交排列的致動器線和 一元像素單元之矩陣的透射動態光罩,二元像素單元的不 透明或透明係作為控制致動器線之輸入的函數,此透射動 態光罩有一頂表面和一底表面。一工件或用以镇測被投射 於其上之一輻射光圖案的一影像偵測元件是放置在支架的 頂表面上。光線通過透明區域且從光罩投射一圖案到支架 上’在該處工件或影像偵測元件被設置。在以影像彳貞測元 件為目標的情況中’具有用以提供表示圖案的訊號至控制 系統的裝置。Used by Photolithography and a Process of Producing Same " Describes a photomask and its manufacturing process. A dynamic photomask exposure system (and a corresponding method) includes a workpiece holder, a light source for an exposure beam, and a transmissive dynamic photomask with a matrix of orthogonally arranged actuator lines and a single pixel unit, and a binary pixel unit. The opacity or transparency is a function of the input to the control actuator line. The transmissive dynamic reticle has a top surface and a bottom surface. A workpiece or an image detecting element for measuring a radiated light pattern projected thereon is placed on the top surface of the support. The light passes through the transparent area and projects a pattern from the mask onto the stand 'where the workpiece or image detection element is set. In the case where an image sensing element is targeted, there is a means for providing a signal representing a pattern to a control system.
五、發明說明(3) __ 控制系統最好是包含— 直接存取儲存裝置。 電腦和用以儲存圖案資料之 透射動態光罩最好是包含 光源最好是包含-二直=器。 透鏡來提ΐ最好由投射準直光束至光罩表面的-組聚焦 透射動態光罩最好是包括一透射 一組授射捸銘· "X、丨,MP i J疋調變器0 至支架上透鏡攸先罩底表面投射且聚焦光罩上的圖案 圖式簡單說明 參考附圖解釋和描述上述、其他方而^ 如下,其中: 述兵他方面和本發明的優點 示一概要立視部分的系統 件’伴隨者-電腦控制的圖案,其:J 明之透射通用動態光罩。 1仅射過符合本發 第1B圖係顯示一平面圖案,其供給至 用動態光罩反應電腦系統提供之訊號。 圖之透射通 第1C圖係顯示一由CCD感測器提供之平面圖 應由光束投射至CCD伴隨著投向透射通用動態光罩所 之影像,其供給回饋資料至控制電腦。 第1D圖係顯示如何由一提供由光束偵測到之影 的電荷耦合元件彩像感測器利用回饋監控系統性能。 ;第2圖係顯示一透射通用動態光um之平面^,其由 一小像素之X,Y矩陣陣列組成,其像素較佳地包括—空間5. Description of the invention (3) __ The control system preferably includes-direct access storage device. The computer and the transmission dynamic mask used to store the pattern data should preferably include a light source and a two-in-line device. The lens is best to be used to project a collimated beam onto the surface of the mask-a group-focusing transmission dynamic mask preferably includes a transmission group of transmitting inscriptions " X, 丨, MP i J 疋 modulator 0 The pattern on the bottom surface of the lens on the bracket is projected on the holder and the pattern on the focusing mask is briefly explained with reference to the drawings to explain and describe the above and other aspects ^ as follows, in which: the aspects of the soldier and the advantages of the present invention are summarized. The visual part of the system is a 'companion-computer controlled pattern', which is: J Mingzhi transmission universal dynamic mask. 1 Only shot in accordance with the present invention. Figure 1B shows a flat pattern, which is supplied to the signal provided by the computer system using a dynamic photomask. Figure 1C shows a plan view provided by a CCD sensor. The image should be projected by the light beam onto the CCD along with the image transmitted by the universal dynamic mask, which provides feedback data to the control computer. Figure 1D shows how the performance of a system can be monitored using feedback from a charge-coupled element color image sensor that provides shadows detected by a light beam. Figure 2 shows a plane ^ transmitting general dynamic light um, which is composed of a small pixel X, Y matrix array, and its pixels preferably include-space
C:\Program Files\Patent\0516-3912-E.ptd第 6 頁 五、發明說明(4) _~ 光調變器(SLM)。 第3圖係顯示一 CCD空中影像的強度曲線圖以微米為單 位距離X之方程式》 [符號說明] LB〜光束;Μ卜鏡子;L1〜聚焦透鏡;IL1〜聚焦透 鏡;IL2〜聚焦透鏡;1C〜照明透鏡柱;1〇〜系統;ILM~發光 器透鏡組件;ILC〜照明透鏡柱;ΤΜ~光罩,· TBL〜桌;LB,〜 光束;PU〜聚焦透鏡;PL2〜聚焦透鏡;pLC〜投射鏡柱; CL〜中線;B〜光束;W〜工件;CCD~電荷耦合元件;ST〜載 物;20~影像感測器;24〜傳輸線;26〜電腦(CPU) ; 28〜傳 輸線’30〜直接存取裝置(DASD) ; 34〜控制線;XI〜x轴座 標;Xm~x轴座標;Y1〜y軸座標;γη〜y轴座標;X〜χ軸; C〜CD在晶圓上的圖案,CD〜要求之圖案。 較佳實施例之說明 第1Α圖係顯示根據本發明之一概要立視部分的系統 10,用以利用投射過透射通用動態光罩ΤΜ的光之圖案曝光 一工件。第1Α圖係根據本發明之系統1 0的概要立視部分, 其係沿著系統10的X轴(水平從左至右)和z轴(垂直)(在\ y,z座標系統中)。在桌TBL固定的位置上,放置一透射通 用動態光罩TM。系統10利用投射穿過光罩TM之光線曝光由 載物ST支撐的工件W。 第2圖描述之X,y矩陣激發光罩TM ’其為光罩之平 面圖和包含激發光罩TM的像素元件之電腦26的控制系統。 因此電腦26控制之光罩TM供給的圖案曝光到工件W上。 inn C:\ProgramFiles\Patent\0516-3912-E.ptd第 7 頁 五、發明說明(5) 圖1D係顯示如何利用f荷搞合元 20的回饋監控系統1〇之性能,豆雷 Y^豕歇列益 „ ,ar .«on ^ . 具電何耦合兀件(CCD)影像 感測器2 0供應由光束B债測到的影像資料。 顯/ 一透射通用動態光罩以之平面圖,其顯示 由:夕:像素之X ^矩陣陣列所組成,其像素較佳地包含 -空間光調變器(SLM)。可由-電腦26之中央處理單元改 變,-像素之開/關而從一儲存在例如一磁碟機 或:他直接存取裝置(DASD)的資料儲存元件3〇之電腦資料 庫形成一設計元件圖案。經由習用之互聯方塊34連接電腦 26至包含一延直線χ和7座標軸伸展之致動器線陣列的光罩 ΤΜ。在m條水平線XI…xm 條垂直線γι〜γη的陣列中,χ 線XI至Xm水平延伸和X軸平行且丫線”至“垂直延伸和y軸 平行’在此之m和"η"為正整數和陣列中致動器線數目相 同0 圖1Β顯示一由在圖1Α透射通用動態光罩τμ提供圖案之 平面圖’反應由電腦26取DASD 30中的資料所提供之訊 號,將更詳細地在下介紹。 圖1C顯示一 CCD 20供給圖案之平面圖,反應由光束β 穿過透射通用動態光罩所提供之圖案投射在CC1) 2〇上而被 偵測到之影像。CCD 20提供回饋資料至電腦26,將更詳細 地在下介紹。理想上,圖1B應和圖1(:看起來完全一致,但 由於圖1B係來自DASD 30的影像,其經過電腦16透過傳輸 線3 2傳送至光罩TM ’所以非常容易發生差異。 另一方面’圖1C係當光束β撞擊圖id所示之CCD裝置C: \ Program Files \ Patent \ 0516-3912-E.ptd page 6 5. Description of the invention (4) _ ~ Light modulator (SLM). Figure 3 shows the intensity curve of a CCD aerial image in the unit of distance X in micrometers. [Symbol] LB ~ beam; Mb mirror; L1 ~ focus lens; IL1 ~ focus lens; IL2 ~ focus lens; 1C ~ Illumination lens column; 10 ~ System; ILM ~ Illuminator lens assembly; ILC ~ Illumination lens column; TM ~ Mask, · TBL ~ Table; LB, ~ Beam; PU ~ Focusing lens; PL2 ~ Focusing lens; pLC ~ Projection mirror column; CL ~ center line; B ~ light beam; W ~ workpiece; CCD ~ charge-coupled element; ST ~ loaded object; 20 ~ image sensor; 24 ~ transmission line; 26 ~ computer (CPU); 28 ~ transmission line ' 30 ~ direct access device (DASD); 34 ~ control line; XI ~ x axis coordinate; Xm ~ x axis coordinate; Y1 ~ y axis coordinate; γη ~ y axis coordinate; X ~ χ axis; C ~ CD on wafer On the pattern, CD ~ required pattern. DESCRIPTION OF THE PREFERRED EMBODIMENT FIG. 1A shows a system 10 for an outline viewing part according to an embodiment of the present invention for exposing a workpiece with a pattern of light projected through a universal dynamic mask TM. Figure 1A is a schematic elevation part of the system 10 according to the present invention, which is along the X axis (horizontal from left to right) and z axis (vertical) of the system 10 (in the \ y, z coordinate system). At the fixed position of the table TBL, a translucent dynamic mask TM is placed. The system 10 exposes the workpiece W supported by the carrier ST with the light projected through the mask TM. The X, y matrix excitation mask TM 'described in FIG. 2 is a plan view of the mask and a control system of a computer 26 including pixel elements of the excitation mask TM. Therefore, the pattern supplied from the mask TM controlled by the computer 26 is exposed to the workpiece W. inn C: \ ProgramFiles \ Patent \ 0516-3912-E.ptd page 7 5. Description of the invention (5) Figure 1D shows how to use the F load to combine the performance of the feedback monitoring system 10 of the element 20, Dou Lei Y ^ Xi Xie Li Yi „, ar.« On ^. The electrically-coupled element (CCD) image sensor 20 supplies the image data measured by the beam B debt. A plan view of a transmissive universal dynamic photomask, Its display is composed of: X: matrix array of pixels, whose pixels preferably include-spatial light modulator (SLM). It can be changed by-the central processing unit of computer 26,-on / off of the pixel from one The computer database stored in, for example, a disk drive or the data storage element 30 of his direct access device (DASD) forms a design element pattern. The computer 26 is connected to a line including extension lines χ and 7 through a conventional interconnecting box 34. The mask TM of the actuator line array with the coordinate axis extending. In an array of m horizontal lines XI ... xm vertical lines γι to γη, the χ lines XI to Xm horizontally extend parallel to the X axis and the Y line "to" vertical extension and The y-axis is parallel, where m and "η" are positive integers relative to the number of actuator lines in the array. 0 Figure 1B shows a plan view of the pattern provided by the transmission universal dynamic mask τμ in Figure 1A. The signal provided by the computer 26 and the data in DASD 30 will be described in more detail below. Figure 1C shows a CCD 20 supply pattern The plan view reflects the image detected by the pattern provided by the beam β passing through the transmissive universal dynamic mask and projected on CC1) 20. The CCD 20 provides feedback data to the computer 26, which will be described in more detail below. Ideal Above, Figure 1B should look exactly like Figure 1 (: looks exactly the same, but since Figure 1B is an image from DASD 30, it is transmitted to the photomask TM through the computer 16 through the transmission line 32, so it is very easy to make a difference. On the other hand, FIG. 1C shows the CCD device shown in FIG.
C:\ProgramFiles\Patent\0516-3912-E. ptd第 8 頁 五、發明說明(6) ' _ - — 20,由CCD裝置20所偵測之圖案,在圖1D中載物遠移至提 供圖1C所示之理想相同圖案的系統右侧。 來自一(未顯示)光源的光束LB被導向在一鏡子Ml上, 其反射來自光源的光束LB延著與垂直的z軸平行之路徑 向下,進入一發光器透鏡組件ILM。照明透鏡柱ILC包含— 組發光器透鏡,其產生被導向光罩TM之光線的一準直光 束,依據光罩TM之圖案決定光束!^之部分LB,的透光光 束LB充滿光罩TM之上表面,其被桌TBL支撐在固定位置。 桌TBL在光罩TM圖案的中央下方具有一中空開口 ,光束u, 便經由該處通過。 工件W最好包含一矽半導體晶圓,塗有一層光阻材 料’其被曝光在包括投射穿過光罩TM之一影像的圖案下。 其技射圖案係當一準直光束LB通過當時光罩tj(之透明部分 而產生。因此,在光罩TM的透明部分(而非暗的部分),部 分準直光束LB穿透光罩TM ’藉以投射由光罩所界定且在 光束LB’中被圖案化的影像至工件w上。 透射通用動態光罩TM最好是包括一透射空間光調變器 (SLM),其包含一像素矩陣,而每一像素之透明或不透 明’分別地依據由CPU 26透過傳輸線32至光罩TM供給之X ,y矩陣二元訊號。C P U 2 6控制每一像素之"亮"或"暗"。 光罩TM之矩陣的每一像素回應於X和y矩陣線之訊號而 被切換為ON(亮:"Γ )或OFF(暗:"0")。二元的 0N/0FF("1" Λ"0")訊號提供在矩陣中的透明區域和不透明 區域,使用如由一空間光調變器(SLM)所形成的透射通用C: \ ProgramFiles \ Patent \ 0516-3912-E. Ptd page 8 V. Description of the invention (6) '_-— 20, the pattern detected by the CCD device 20, the load is moved farther to provide in Figure 1D The ideally patterned system on the right is shown in Figure 1C. A light beam LB from a (not shown) light source is directed onto a mirror M1, and the light beam LB from the light source reflects down a path parallel to the vertical z-axis and enters a light emitter lens assembly ILM. The illumination lens column ILC contains a group of illuminator lenses, which generates a collimated beam of light guided to the photomask TM, and determines the light beam according to the pattern of the photomask TM! Part LB, the transparent light beam LB fills the photomask TM. The upper surface is supported in a fixed position by the table TBL. The table TBL has a hollow opening below the center of the photomask TM pattern, and the light beam u passes through it. The workpiece W preferably comprises a silicon semiconductor wafer coated with a layer of photoresist material 'which is exposed under a pattern including an image projected through a photomask TM. The technical pattern is generated when a collimated light beam LB passes through the transparent portion of the mask tj (at the time. Therefore, in the transparent portion (not the dark portion) of the mask TM, a part of the collimated beam LB penetrates the mask TM 'Thus projecting the image defined by the mask and patterned in the light beam LB' onto the workpiece w. The transmissive universal dynamic mask TM preferably includes a transmissive spatial light modulator (SLM), which includes a pixel matrix The transparent or opaque of each pixel is respectively based on the binary signal of X, y matrix supplied by CPU 26 through transmission line 32 to mask TM. CPU 2 6 controls the "light" or "dark" of each pixel ". Each pixel of the mask TM matrix is switched to ON (light: " Γ) or OFF (dark: " 0 ") in response to the signals of the X and y matrix lines. Binary 0N / 0FF (" 1 " Λ " 0 ") The signal provides transparent and opaque areas in the matrix, using a transmission common as formed by a spatial light modulator (SLM)
C:\Program Files\Patent\0516-3912-E.ptd第 9 頁 五、發明說明(7) 動態光罩TM,,光束LB經其被投射。 由设§十者製作並被儲存於磁碟機儲存元件2〇的電路佈 局從電腦(CPU)26被轉移至透射通用動態光罩μ之控制線 34中’經由適時地在適當位置改變像素為"〇N,,和/或 "OFF” ,以形成當不同的工件被負載於平台ST上時做為時 間的函數所須要的每一圖案。 如上所述,在供給透射通用動態光罩TM的元件能量之 電腦CPU 26的控制下,產生由透射光罩TM供給之圖案化之 影像。電腦CPU 26由直接存取裝置(DASD) 3〇例如一圖案 資料被儲存之磁碟機,收到在傳輸線28之x,y矩陣圖案 化資料。CPU 26也在傳輸線28上傳送資料用以儲存資料在 DASD 30,如同在技藝中被相當了解之技巧。 投射光束LB穿過光罩TM之後,其轉換為光束!^,,光 束LB穿過投射鏡柱PLC曝光工件W,投射在光束b收到從透 射光罩TM映射至工件w之圖案化影像。 換句話說,圖案化影像包含部分光束[β,其穿過光罩 TM而成為光束LB’ ’且然後其向下穿透過投射鏡柱几(:,其 在光束LB穿過光罩TM之後接收光束LB,。投射鏡柱PLC包括 -組透鏡。投射透鏡維持沿中線被導向王:^^的括 準直光束LB,。這些透鏡聚焦光束LB,成為光束B,其以從 光罩TM被技射的圖案曝光工件w的表面,藉以利用從光罩 TM被投射的圖案曝光工件w表面上的光阻。 在晶圓承載平台上之CCD成像器回應於由光罩/投射透 鏡轉換之曝光圖案。電荷耦合元件以!)產生一影像,其被C: \ Program Files \ Patent \ 0516-3912-E.ptd page 9 5. Description of the invention (7) Dynamic photomask TM, through which the light beam LB is projected. The circuit layout produced by the designer and stored in the storage device 20 of the disk drive is transferred from the computer (CPU) 26 to the control line 34 of the transmission universal dynamic mask μ 'by changing the pixels at appropriate locations in time to " 〇N ,, and / or " OFF "to form each pattern required as a function of time when different workpieces are loaded on the platform ST. As described above, a universal dynamic reticle is provided in the transmission The component energy of the TM is controlled by the computer CPU 26 to generate a patterned image supplied by the transmission mask TM. The computer CPU 26 is controlled by a direct access device (DASD) 30. For example, a disk drive in which pattern data is stored is collected. To the x, y matrix patterning data on the transmission line 28. The CPU 26 also transmits the data on the transmission line 28 to store the data in the DASD 30, as a technique well known in the art. After the projection beam LB passes through the mask TM, It is converted into a beam! ^. The beam LB passes through the projection lens PLC to expose the workpiece W, and is projected on the beam b to receive a patterned image mapped from the transmission mask TM to the workpiece w. In other words, the patterned image includes a part of the beam [β , 其 穿The photomask TM becomes the light beam LB ′ ′ and then it passes through the projection lens column (:, it receives the light beam LB after the light beam LB passes through the photomask TM. The projection lens PLC includes a group lens. The projection lens is maintained The collimated light beam LB, which is guided along the center line, is focused by these lenses. These lenses focus the light beam LB into a light beam B, which exposes the surface of the workpiece w in a pattern fired from the photomask TM, thereby using the photomask TM The projected pattern exposes the photoresist on the surface of the workpiece w. The CCD imager on the wafer carrier platform responds to the exposure pattern converted by the photomask / projection lens. The charge-coupled element generates an image, which is
C:\ProgramFiles\Patent\0516-3912-E.ptd第 10 頁C: \ ProgramFiles \ Patent \ 0516-3912-E.ptd page 10
庫之=』 存在資料儲存裝置3。的資料 二又:圖案比較。分析這些CCD影像之結果 化炎 上之圖案。ccd成像器也對聚焦、劑量、數 值孔徑和部分相干性設置之最佳化有幫助。 圖2係顯示一透射通用動態光罩TM,其具有一範園由 ^約〇·1至大約約5〇%至大約_的光寶透 率〇 s曝光不同層時,不用機械式地再裝光罩ΤΜ,只要經 由CPU將裝置/層之檔案載入至光罩ΤΜ。 /' 整個裝置使用同一實質的光罩以(固定的像素)且光罩 ΤΜ沒有機械式的移動,其可引人注目地改善外罩 Coverlay)(層到層之間)。 這明顯地減少了所需之光罩組。 資料庫 裝置A 裝置B 層1 層1 層2 層2 層3 層3 層4 層4 1. 一 C C Ι>·影像(虛幻影像)和真實處理過之晶圓[j)比 較’以校準CCD影像臨界尺寸(CD),固定虛幻影像之界The library = ”exists in the data storage device 3. Information Second: Pattern comparison. The result of analyzing these CCD images is the pattern on the inflammation. The ccd imager also helps optimize the focus, dose, numerical aperture, and partial coherence settings. FIG. 2 shows a transmissive universal dynamic reticle TM, which has a light transmission rate ranging from about 0.1 to about 50% to about 50%. When different layers are exposed, there is no need to reinstall mechanically. Mask TM, as long as the device / layer file is loaded into the mask TM via the CPU. / 'The entire device uses the same physical mask (fixed pixels) and the mask TM has no mechanical movement, which can noticeably improve the cover cover (layer to layer). This significantly reduces the number of reticle sets required. Library device A Device B Layer 1 Layer 1 Layer 2 Layer 2 Layer 3 Layer 3 Layer 4 Layer 4 1. One CC Ι > · Comparison of the image (unreal image) and the real processed wafer [j) 'to calibrate the CCD image Critical Dimensions (CD), fixed boundaries for unreal images
C:\ProgramFiles\Patent\0516-3912-E.ptd 第 11 頁 五、發明說明(9) 如同在圖3所示,其顯示以強度做 離x的函數的CCD虛幻影像之圖式。·、 书之距 在圖3中’ C係設計圖案CD映射在曰圓,*阳 驗數據決定c之強度臨界值。在曰日圓上之圖案’由實 〇之後CD之⑽影像也將和資料庫圖案相比較以決定 U)之改變和CCD影像之失真。 权Μ决& 失真3.然後在電腦26中之系統改正CD和在動態光罩ΤΜ上之 4.使用此CCD影像,一則可定準則以決 ^ ^ 的最佳焦距和1的曝光工具ΕΤ之承組 資料5庫也可改變焦距和曝光劑量,然後檢視CCD影像/ f料庫圖案對應結果,根據至CPU的回冑決定最佳之 值孔偎)和透鏡參數之部分相干性,以提供為得到最大 距深度和能量曝光寬度的最佳設置。 ·、、 總而言之’本發明講授一光罩系統,包含 合_:a) 一透明通用動態光罩TM(例如,一空間光調變器組 (b) —回饋至電腦之CCD影像。 本發明中所應用之物質材料,並不限於實施例所引述 者’其能由各種具恰當特性之物質和形成方法所置換,立 本發明之結構空間亦不限於實施例引用之尺寸大小。 雖然本發明已以一較佳實施例揭露如上,然其並非用 以限定本發明,任何熟習此技藝者’在不脫離^發明之精 神和範圍内,當可作些許之更動與潤飾,因此本發明之保C: \ ProgramFiles \ Patent \ 0516-3912-E.ptd Page 11 V. Description of the Invention (9) As shown in Fig. 3, it shows the CCD unreal image of the function of intensity as a function of x. ·, Book distance In Figure 3, the C design pattern CD is mapped on a circle, and the * empirical data determines the critical value of c's intensity. After the pattern on the Japanese yen, the image of the CD will be compared with the database pattern to determine the U) change and the distortion of the CCD image. Weight M & Distortion 3. Then the system in the computer 26 corrects the CD and on the dynamic mask TM 4. Using this CCD image, a rule can be set to determine the best focal length and 1 exposure tool ET It can also change the focal length and exposure dose in the library 5 database, and then check the CCD image / f library pattern corresponding results, and determine the optimal value according to the response to the CPU.) And the partial coherence of the lens parameters to provide Optimal settings for maximum distance depth and energy exposure width. · In short, the present invention teaches a photomask system, including: a) a transparent universal dynamic photomask TM (for example, a spatial light modulator group (b)-a CCD image fed back to a computer. In the present invention The material materials used are not limited to those cited in the examples, which can be replaced by various materials and forming methods with appropriate characteristics, and the structural space of the present invention is not limited to the dimensions cited in the examples. Although the present invention has The above is disclosed in a preferred embodiment, but it is not intended to limit the present invention. Any person skilled in the art can make some changes and retouches without departing from the spirit and scope of the invention, so the protection of the present invention
C:\Program Files\Patent\0516-3912-E.ptd第 13 頁C: \ Program Files \ Patent \ 0516-3912-E.ptd page 13
Claims (1)
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KR1019970081387A KR100499622B1 (en) | 1997-12-31 | 1997-12-31 | Method for manufacturing cell projection mask of semiconductor device |
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TW087117529A TW392208B (en) | 1997-12-31 | 1998-10-22 | Dynamic photo mask exposure system and method of producing same |
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