JP3064366B2 - Projection exposure apparatus and circuit pattern manufacturing method using the apparatus - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure apparatus for exposing a circuit pattern on a substrate for photolithography (such as a semiconductor wafer or a glass plate).

[Conventional technology]

In a conventional projection exposure apparatus, even if it has a means for correcting the image distortion of the projection optical system, its operation purpose is:
Prevent fluctuation of image distortion mainly due to environmental changes in the outside world,
Alternatively, it has been used for the purpose of removing an uncorrectable residual error during assembly adjustment.

Further, when it is assumed that a plurality of projection exposure apparatuses are used, even if any combination of the projection exposure apparatuses is used, the image distortion is averaged among the plurality of apparatuses so that the superposition of the circuit patterns does not largely shift. It was adjusted to be the best.

Further, in order to increase the overlay accuracy between layers exposed by different projection exposure apparatuses, Japanese Patent Application Laid-Open No. 62-7129,
As disclosed in Japanese Patent Application Laid-Open No. 62-24624, there has been proposed a method of adjusting the relative magnification of each device so that the overlay accuracy of an image having characteristics relating to image distortion of each device is optimized. I have. This method uses a characteristic (aberration curve) relating to image distortion within a predetermined exposure range from the center of the field of view (optical axis) of the first projection exposure apparatus to a predetermined image height position, and the second exposure used for overlay exposure. When comparing the characteristics of the projection exposure apparatus with respect to image distortion within a predetermined exposure range, for example, while changing the projection magnification of the projection optical systems of both apparatuses relatively,
The image distortion amount obtained at any of a plurality of image height positions within a predetermined exposure range from the optical axis of the first projection exposure apparatus to the predetermined image height input value, and the image distortion amount within the same predetermined exposure range of the second projection exposure apparatus The absolute value of the deviation from the image distortion amount in step (1) is obtained, and the projection optical system of at least one of the first and second exposure apparatuses is designed to minimize the maximum value among the absolute values. It is to adjust the magnification. As the magnification correcting means, a part of the lens element interval constituting the projection optical system is sealed from the outside air, and the internal air pressure is changed. Alternatively, a method has been proposed in which some lens elements are moved up and down in the optical axis direction.

[Problems to be solved by the invention]

However, the projection optical system provided in the projection exposure apparatus essentially causes a superposition error due to an image distortion that cannot be completely removed by adjustment due to a minute processing error generated at the time of manufacturing or assembling the optical member. come. Conventionally, when using multiple devices, these errors are:
In all combinations between devices, adjustments were made to minimize them as much as possible. For example, when considering three devices A, B, and C, the characteristics of device A were strictly matched to the characteristics of device B. In such a case, it is difficult to exactly match the characteristics between all the devices, such as the deterioration of the overlay accuracy of the devices A and C.

In addition, even when the magnification between different devices is adjusted to improve the overlay accuracy, since the magnification is isotropically corrected with respect to the optical axis, a usage method in which the optical axes between the devices do not match is used. In this case, or when there is an asymmetric (anisotropic) image distortion in the optical axis, there is a problem that it cannot always be an effective means.

[Means for solving the problem]

In order to solve the above problems, the present invention provides a projection exposure apparatus that projects an image of a pattern formed on a mask (1) onto a substrate (14) via a projection optical system (3) and exposes the substrate. In the first, a first part forming a part of the projection optical system
It has a lens group (6, 7), a second lens group (8) that constitutes a part of the projection optical system, and three driving elements arranged at a predetermined interval on the periphery of the first lens group. A first drive unit (4, 10a, 10b, 10c) for driving each of the three drive elements to move the first lens group; and a first drive unit (4, 10a, 10b, 10c) disposed at predetermined intervals on a peripheral portion of the second lens group. Second drive means (5, 11a, 11b, 11c) having three drive elements, each of which drives to move the second lens group
And control for controlling the driving amounts of the three driving elements of the first driving means and the three driving elements of the second driving means in order to adjust the image forming state of the pattern image projected on the substrate. Means (20, 21).

(Operation)

According to the present invention, since the distortion shape of the pattern image projected on the substrate can be changed almost arbitrarily, it is possible to improve the overlay accuracy of the pattern on the substrate. Further, for example, a characteristic relating to image distortion of a projection optical system of an exposure apparatus used in a pre-process or a post-process and a characteristic relating to image distortion generated when driving a driving element of a first driving unit and a driving element of a second driving unit. Based on the above, the amount of image distortion at which the pattern of the mask and the substrate are superimposed is calculated, and the image distortion is corrected based on the amount of image distortion. The characteristics of the exposure apparatus relating to image distortion can be more strictly matched.

〔Example〕

FIG. 1 is a diagram showing a schematic configuration of a projection exposure apparatus according to an embodiment of the present invention.

Circuit pattern drawn on photomask (reticle) 1
The MP (or an image distortion measurement pattern described later) is illuminated from above with almost uniform illuminance by the illumination light IL, and forms an image on the wafer 14 via the one-side telecentric projection lens 3. Reticle 1 is a reticle holder RH and a piezo element 30
It is mounted on the reticle stage 2 via a to 30d (only 30a and 30b are shown in FIG. 1), and is positioned so that the center point of the formation area of the circuit pattern MP coincides with the optical axis AX. The reticle stage 2 is configured to be two-dimensionally movable in a horizontal plane by a motor (not shown). The initial setting of the reticle 1 is based on a mark detection signal from a reticle alignment system (not shown) for photoelectrically detecting an alignment mark around the reticle. This is performed by finely moving the reticle stage 2 based on this. The piezo elements 30a to 30d are fixed to the reticle stage 2 corresponding to the respective sides of the circuit pattern area, and the reticle 1 can be moved in the optical axis direction (z direction) by expanding and contracting them. In addition, it is possible to incline two-dimensionally with respect to a horizontal plane with the center point (optical axis AX) of the circuit pattern area as a reference. Incidentally, the projection lens 3 is satisfactorily corrected for chromatic aberration with respect to the wavelength (exposure wavelength) of the illumination light IL, and the reticle 1 and the wafer 14 are arranged so as to be conjugate to each other under the exposure wavelength. The wafer 14 is two-dimensionally moved by a motor 13 in a step-and-repeat manner, and is mounted on a wafer stage 12 movable in the z-direction. The end of the wafer 14 reflects a laser beam from a laser interferometer 18. The movable mirror 17 is fixed. The two-dimensional position of the wafer stage 12 is detected by the laser interferometer 18 with a resolution of, for example, about 0.01 μm. A reference member (glass substrate) 15 having fiducial marks used for image distortion measurement (described later) is provided on the wafer stage 12 so as to substantially coincide with the surface position of the wafer 14. I have. Although not shown in the present embodiment, it is assumed that two sets of light transmissive slit patterns (bar patterns) are formed extending in the y and x directions, respectively, as fiducial marks. Further, the inside of the wafer stage 12 is close to the reference member 15.
A photoelectric detector 16 such as a PIN photodiode is disposed. In this embodiment, the transparent light (exposure light) IL that has passed through the image distortion measuring pattern of the reticle 1 (for example, a light-transmitting cross pattern) is converted into a slit pattern. It is configured to receive light via a. In FIG. 1, the wafer stage 12 has moved to the left, and the projected image of the circuit pattern is formed not on the wafer 14 but on the reference member 15 for measuring image distortion.

Lens elements 6 and 7 that are components of the projection lens 3 are integrally fixed to the support 4, and a lens element 8 is fixed to the support 5. The support 4 includes piezo elements 10a and 10b,
The support 5 is supported by a support 5 via a not-shown 10c, and the support 5 is supported by a barrel of the projection lens 3 via piezo elements 11a and 11b and an unshown 11c. By driving these piezo elements 10a to 10c, 11a to 11c, the lens elements 6, 7, and 8 can be moved in the optical axis direction or can be tilted from a plane perpendicular to the optical axis direction.

The lens elements 6 to 8 are located close to the reticle 1 among the components of the projection lens 3. This is because the position and tilt amount of these three lens elements have a greater effect on the image distortion characteristics of the projection lens 3 than the other lens elements. It should be noted that the lens element may be driven by a projection lens that has the greatest effect on image distortion characteristics. At this time, it is assumed that the lens elements are driven within a range where the influence on the other aberrations of the projection lens 3 can be ignored. Alternatively, a method of correcting other various aberrations while correcting the nonlinear image distortion by adjusting the distance between the lens elements is also conceivable.

A controller (CNT) 21 is provided from a console (CON) 22 storing information on the amount of image distortion of each exposure apparatus and information on fluctuation characteristics of image distortion according to the amount of driving of a lens element or a reticle, or from another exposure apparatus. The information is directly input from the device (EXP) 23. Also, based on this information, the driving amounts of the piezo elements 10a to 10c, 11a to 11c, or 30a to 30c for optimally matching the image distortion of each exposure apparatus are calculated, and the piezo element driving circuit (PC) 20 Output. The console 22 also stores information on the presence or absence of a thin film (a so-called pellicle) for preventing the transfer from attaching to the reticle, and further stores information about the type and thickness of the pellicle. This is one of the basic data when controlling the amount of image distortion.

The piezo element driving circuit 20 includes the piezo elements 10a to 10c and 11a.
11c and 30a to 30c. Although only one piezo element driving circuit 20 is shown, a plurality of piezo elements may be used in accordance with the number of piezo elements. Note that hysteresis exists between the piezo element and the drive voltage, and does not change in proportion to the drive voltage. For this reason, it is desirable to perform position control by disposing a position sensor, for example, a capacitive sensor, a differential transformer, a strain gauge, or the like, near each piezo element. As for the driving element, a magnetostrictive element or the like can be considered in addition to the piezo element, and the same effect can be obtained. Further, in this embodiment, means for driving the reticle 1 and optical members of the projection lens 3, that is, the lens elements 6 to
Although an example is shown in which both of the driving means 8 and the driving means 8 are used, only one of the means may be used in the present invention, and the same effect can be obtained in any case. A specific correction example will be described later.

By the way, in the present embodiment, the reference member 1 for image distortion measurement is used.
5 and a photoelectric detector (detector) 16 are sensors for measuring the image distortion set by the above means, and the controller 21 checks whether or not the image distortion matches the set image distortion. The reticle 1 is a reticle (test reticle) dedicated to image distortion measurement, and has a plurality of image distortion measurement patterns on its lower surface (pattern surface).
It is formed in an array of × 5.

In the present embodiment, the reticle 1 is illuminated by the illumination light IL, and an image of a reticle pattern (image distortion measurement pattern) is sequentially projected onto the image distortion measurement reference member 15 by driving the wafer stage 12. . By detecting the amount of light that passes through this reference member 15 and reaches the detector 16,
It detects whether the position of the pattern for measuring the image distortion of the reticle 1 is formed on the image side of the projection lens 3, that is, the position on the conjugate plane of the reticle 1, that is, the image distortion in the exposure field of the projection lens 3. The relative positional relationship between the projected images of the measurement pattern is detected. At this time, the wafer stage 12 holding the image distortion measurement reference member 15 and the detector 16
Is detected by a laser interferometer 18 and this position information is transmitted to a signal processor (DSC) 19 together with a light amount signal from the detector 16. Here, a photoelectric signal is sampled in synchronization with an up / down pulse signal generated for each unit movement amount (0.01 μm) of the wafer stage 12, and each sampled value is converted into a digital value and stored in a memory (not shown). After being stored in order, the position of the projected image of the pattern is calculated by a predetermined arithmetic processing. Position information (image distortion information) of the projected image of the image distortion measurement pattern obtained by the signal processor 19 is fed back to the controller 21 to determine whether to further drive the piezo elements 10a to 10c, 11a to 11c, and 30a to 30c. Is determined. Note that the images of the plurality of image distortion measurement patterns by the projection lens 3 are sequentially transferred to the image distortion measurement reference member 15.
To project upward, the wafer stage 12 may be scanned.

The above-described method of measuring image distortion is also disclosed in Japanese Patent Application Laid-Open No. 59-94032.

Further, as reticle 1, a device reticle in which a plurality of image distortion measurement patterns are formed near the outer periphery of the circuit pattern (and in the case of a multi-die reticle, within the area corresponding to the scribe line) instead of the test reticle is used. You can also. In this case, an alignment mark may be used as the image distortion measurement pattern, and the position, number, and the like of the measurement pattern may be determined according to the required measurement accuracy. Further, by using a test reticle (or device reticle), a reference member 15 and a detector 16, the relationship between the driving amount of the reticle 1 or the lens elements 6 to 8 and the change amount of the optical characteristics (image distortion or the like) of the projection lens 3 The optical characteristics and the like of the projection lens 3 in the initial state can also be obtained.
Therefore, it is not necessary to store the above relationships and optical characteristics in the console 22 in advance. In addition, the above measurement is performed at regular time intervals or each time a sensor that monitors changes in the environment (temperature, atmospheric pressure, humidity, etc.) detects a change exceeding an allowable value, and the information stored in the console 22 is sequentially updated. It does not matter. By this update operation, even if there is an environmental change, a change in the optical characteristics of the projection lens 3 due to absorption of exposure light, or an expansion of the reticle 1, it is possible to accurately control the magnification and image distortion of the projected image of the reticle pattern. It becomes possible.

Further, in the present embodiment, the pattern for image distortion measurement is illuminated by the illumination light IL illuminated from above the reticle 1 and is formed on the reference member 15, but the light source is arranged on the detector 16 side. Illuminates the slit pattern of the reference member 15 from below (inside the wafer stage), forms an image on the image distortion measurement pattern on the lower surface of the reticle 1, and transmits light transmitted from the reticle 1 by a detector provided on the upper surface of the reticle. The same effect can be obtained by a configuration for receiving light.

The reference member 15, the detector 16, and the signal processor 19
Is a means for confirming image distortion, and even if these components are omitted, the effects of the present invention are sufficiently present.

FIG. 2 is a view schematically showing an arrangement of a piezo element of a projection lens used in a projection exposure apparatus according to an embodiment of the present invention. The piezo elements 10a to 10c are arranged on substantially the same circumference at a distance of about 120 ° each. Further, the other piezo elements 11a to 11c are similarly arranged. This allows the supports 4 and 5 to move in the vertical (z) direction and to tilt from the horizontal plane.

FIG. 3 is a diagram schematically showing an example of a state in which a piezo element, which is a driving unit of an optical member of the projection exposure apparatus according to the embodiment of the present invention, is driven to change the image distortion characteristic of the projection lens. . The characteristic relating to image distortion before driving the piezo element is indicated by a broken line, and the characteristic relating to image distortion after driving the piezo element is indicated by a solid line.

The following relationship exists between the driving of the piezo element and the change in the characteristic of image distortion. That is, when driving the piezo element up and down the reticle, if the projection lens 3 is telecentric on both sides, the shape of the image distortion changes from a barrel type to a pincushion type (or vice versa), and the one-side telecentric. If so, the magnification changes. When the reticle is tilted, trapezoidal or rhombic image distortion can be changed.

On the other hand, when driving the piezo element to move the lens element up and down, the magnification of the image changes, and when the lens element is tilted or moved in the horizontal direction, the trapezoidal or rhombic image distortion changes. Can be done.

Next, the operation of this embodiment will be described with reference to FIG.

FIG. 4 is a diagram showing a state in which two projection exposure apparatuses to which the embodiment of the present invention is applied are combined.

First, a pattern PA1 of the reticle M ₁ in unit A wafer 14
Exposure. Information DS1 on the optical characteristics (amount related to image distortion) of the projection lens PL1 of this apparatus A in a standard state is as follows.
It is stored in the controller CNT1 in advance. The wafer 14 exposed by the apparatus A is transported to the apparatus B after the processing, and is subjected to the overlay exposure.

Next, prior to the overlay exposure, an information signal DS1 relating to the optical characteristics of the projection lens PL1 of the apparatus A is transmitted from the controller CNT1 to the controller CNT2 of the apparatus B directly or via an external host controller HCNT. The controller CNT2 stores information DS2 relating to the optical characteristics of the projection lens PL2 of the device B. Based on this information and the information DS1 input from the controller CNT1, both devices A, B
Of the projection lens PL1, for optimally match the optical properties of PL2, the reticle M ₂ and, or determine the driving amount of the lens elements 6-8. Furthermore, the piezo element P ₂ corresponding to this drive amount
And outputs a signal S ₂ related to the driving amount of the piezo controller PC2. Piezo controller PC2 is a driving voltage V ₂ and outputs the piezo element P ₂ on the basis of the signal S _2, to drive the piezo element P _2. At this time, a reticle M ₂ or a lens element 6 to 8 is used based on a signal from the position sensor using a position sensor.
By driving the piezo element P ₂ while monitoring the position of
More accurate position control is possible. The determination of the amount of drive of the piezoelectric element P ₂ may be performed by an external host controller HCNT.

By the driving of the piezo element P ₂ after the optical properties of the projection lens PL2 is corrected, the pattern of the reticle M ₂ to the wafer 14
PA2 is overlaid and exposed. Prior to this exposure,
The optical characteristics of the projection lens PL2 after the optical characteristic correction may be confirmed using the test reticle, the reference member 15, and the detector 16 described above. Further, the correction of the optical characteristics is not limited to only adapting the characteristics of the device B to the characteristics of the device A as described above.
The characteristics of the device B may be adapted to the device A in advance.
Further, the optical characteristics of both devices A and B may be corrected, or the optical characteristics of both devices may be adapted.

Incidentally, the piezoelectric element P ₁ is a drive member for correcting the optical characteristics of the device A, the piezoelectric element P _1, P _2, like the embodiment of FIG. 1, the components of the projection lens PL1, PL2 It may be mounted on both the part and the supports of the reticles M ₁ and M ₂ .
PC ₁ , S ₁ , and V ₁ respectively represent a piezo controller of the device A, a signal representing the drive amount of the piezo element, and a drive voltage of the piezo element, and both correspond to the device B. Further, three or more projectors can be used via the host controller HCNT as shown in FIG. 4 or by directly connecting the controller CNTs.

FIG. 5 shows the image distortion (here, isotropic image distortion) of the circuit pattern due to the overlapping exposure when the optical axes do not coincide.
FIG. Dotted lines indicate characteristics relating to image distortion of the exposure apparatus used in the previous process. At this time, the position of the optical axis of the projection lens of the device is SC1. In the previous step, exposure is performed using only a 4 × 4 block portion at the upper left of the drawing in the area shown by the dotted line. Other blocks are shielded from light and are not exposed. That is, it is assumed that the exposure apparatus used in the preceding process has a field size of, for example, 30 × 30 mm and performs exposure using a part of the 20 × 20 mm area. Then, consider a case where the apparatus that performs exposure this time has a field size of 20 × 20 mm. The state (shape) of the image distortion of the apparatus used for exposure this time is shown by a solid line. The position of the optical axis of the projection lens of this device is SCa. That is, this is an example in which the optical axis cannot be aligned due to the arrangement of the pattern on the reticle. As is apparent from the figure, the shape of the solid line image distortion is isotropically enlarged or reduced with respect to the optical axis SCa, or xy.
Good superposition of the circuit patterns cannot be expected even if they are moved in a plane. However, according to the method of the present invention, for example, in the case shown in FIG. 3, the shape of the image distortion can be changed from the solid line to the broken line, contrary to the case of FIG. By utilizing this, higher overlay accuracy can be obtained. An example of the method is briefly described below.

First, consider the absolute value of the deviation between the grid point in the previous process of each grid point of the region to be superimposed shown in FIG. 5 and the grid point to be exposed this time. For example, consider the absolute value of the distance between SCa and SCa 'in FIG. In addition, the controller CNT or the host controller HCNT stores the driving amount of the lens for image distortion correction or the driving amount of the reticle and the moving amount of each lattice point in advance in the form of a mathematical expression or a table. From this information, the driving amount of the correcting lens element or the driving amount of the reticle, and the driving amount of the lens element and the reticle, which minimize the absolute value of the absolute value of the deviation of each corresponding lattice point, become the minimum. The amount of lateral shift in the xy plane of the wafer stage and the amount of correction of the focal position for correcting the displacement between the reticle and the wafer are calculated. As a result,
As shown in the figure, good superimposition of circuit patterns can be expected by including an image in a form that matches as much as possible the image distortion of the exposure apparatus in the previous step.

〔The invention's effect〕

As described above, according to the present invention, the distortion shape of the pattern image projected on the substrate (wafer) can be changed almost arbitrarily, so that the pattern overlay accuracy on the substrate can be improved. Further, even when overlay exposure between different layers on a substrate (wafer) is performed using different projection exposure apparatuses, the overlay accuracy of circuit patterns can be improved.

Further, according to the present invention, since the shape of the image distortion can be changed to an almost arbitrary shape, when the optical axes of a plurality of exposure apparatuses used between different layers do not coincide with each other or are asymmetric with respect to the optical axis. Even in the case where there is a large image distortion, a more accurate overlay can be expected by distorting the image asymmetrically with respect to the optical axis.

Furthermore, such as superimposition was possible only by selecting a particularly compatible combination from a large number of projection exposure apparatuses,
It is not necessary to select a specific device even when superposing layers that require extremely high accuracy, and there is also an effect that restrictions on use of the device on a semiconductor element manufacturing line can be greatly reduced.

Also, on a production line composed of a plurality of projection exposure apparatuses,
Even when there is an exposure apparatus having a different exposure method, for example, an exposure apparatus of a mirror projection method, a proximity method, or a contact method, by incorporating the projection exposure apparatus according to the present invention, high-accuracy overlay exposure can be similarly performed.

[Brief description of the drawings]

FIG. 1 is a diagram showing a schematic configuration of a projection exposure apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic view showing an arrangement of a piezo element of a projection lens used in the projection exposure apparatus according to the embodiment of the present invention. FIG. 3 is a diagram schematically showing an example of a state in which a piezo element, which is a driving unit of an optical member of the projection exposure apparatus according to the embodiment of the present invention, is driven to change the image distortion characteristic of the projection lens. FIG. 4 is a view showing a state in which two projection exposure apparatuses to which the embodiment of the present invention is applied are combined. FIG. 5 is a view showing a state of image distortion of a circuit pattern due to superposition exposure when the optical axes do not coincide. FIG. 6 is a diagram showing a state of image distortion showing the superposition of circuit patterns after performing image distortion correction according to the embodiment of the present invention. [Explanation of Signs of Main Parts] 1, M ₁ , M ₂ …… reticle, 3, PL1, PL2 …… Projection lens, 10a
_{~10c, 11a~11c, 30a~30c, P 1} , P 2 ...... piezoelectric element, 20, PC
1, PC2 ... Piezo drive circuit, 21, CNT1, CNT2 ... Controller, HCNT ... Host controller.

Continuation of the front page (56) References JP-A-62-291920 (JP, A) JP-A-62-35619 (JP, A) JP-A-2-81019 (JP, A) JP-A-63-213341 (JP) JP-A-63-199419 (JP, A) JP-A-62-32613 (JP, A) JP-A-62-7129 (JP, A) JP-A-62-24624 (JP, A) 60-21051 (JP, A) JP-A-4-30411 (JP, A) JP-A-3-88317 (JP, A) JP-A-61-256636 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/027 G03F 7/20

Claims (12)

(57) [Claims] 1. A projection exposure apparatus for projecting an image of a pattern formed on a mask onto a substrate via a projection optical system and exposing the substrate, wherein a first lens group constituting a part of the projection optical system A second lens group constituting a part of the projection optical system; and three driving elements arranged at a predetermined interval on a peripheral portion of the first lens group, wherein each of the three driving elements is First
A first driving unit for driving the lens group; and three driving elements arranged at a predetermined interval on a peripheral portion of the second lens group, each of the three driving elements being the second driving element.
A second driving unit that drives to move the lens group; and three driving elements of the first driving unit and a second driving unit that adjusts an imaging state of a pattern image projected on the substrate. Control means for controlling each of the driving amounts of the three driving elements, the projection exposure apparatus comprising: 2. The control means controls a driving amount of three driving elements of the first driving means to move the first lens group in an optical axis direction of the projection optical system. 2. The apparatus according to claim 1, wherein a driving amount of three driving elements of a second driving unit is controlled to move the second lens group in an optical axis direction of the projection optical system. 3. 3. The control means drives three drive elements of the first drive means and three drive elements of the second drive means to adjust a magnification of a pattern image projected on the substrate. 3. The device according to claim 2, wherein each of the quantities is controlled. 4. The control means can control the drive amounts of three drive elements of the first drive means so that the first lens group can be tilted from a plane perpendicular to the optical axis of the projection optical system. ,
2. The apparatus according to claim 1, wherein the driving amounts of three driving elements of the second driving unit are controlled to tilt the second lens group from a plane perpendicular to the optical axis of the projection optical system. The described device. 5. The control means according to claim 3, wherein said control means controls three drive elements of said first drive means and three drive elements of said second drive means to adjust a distortion shape of a pattern image projected on said substrate. The apparatus according to claim 4, wherein each of the driving amounts is controlled. 6. The apparatus according to claim 1, further comprising third driving means having a driving element for supporting the mask so as to be vertically movable and tiltable. . 7. The device according to claim 1, wherein three driving elements of said first driving means are arranged at substantially equal intervals, and three driving elements of said second driving means are arranged at substantially equal intervals. The device according to any one of claims 1 to 6. 8. A measuring means for photoelectrically detecting an image of a pattern for measurement via the projection optical system and measuring an image forming state thereof, wherein the measurement by the measuring means is performed at regular time intervals. The apparatus according to any one of claims 1 to 7, wherein the change is performed when a change in environment becomes equal to or greater than a predetermined allowable value. 9. The apparatus according to claim 1, further comprising a confirmation unit configured to confirm whether each of the driving amounts of the three driving elements of the first driving unit and the three driving elements of the second driving unit is appropriate. Item 10. The apparatus according to any one of Items 1 to 8. 10. The control device according to claim 3, wherein said control means includes three drive elements of said first drive means and said second drive element based on optical characteristics of a projection optical system of an exposure apparatus used in a preceding process or a subsequent process.
The apparatus according to claim 1, wherein each of the driving amounts of three driving elements of the driving unit is controlled. 11. The method according to claim 1, wherein the control unit is configured to control a distortion of a pattern image formed on the substrate by an exposure apparatus used in the pre-process or the post-process, and a distortion of a pattern image of the mask projected on the substrate. So that the deviation from
11. The apparatus according to claim 10, wherein each of the driving amounts of three driving elements of the first driving means and three driving elements of the second driving means is controlled. 12. A method for manufacturing a circuit pattern using the apparatus according to claim 1. Description: