3284twf.doc/〇〇i A7 B7 麫浐部中^"^Χ0Μ-Τ!·Λ'^^竹，^印" 五、發明説明（i ) 本發明是有關於一種半導體之製程，且特別是有關於 一種雙重金屬鑲嵌（Dual Damascence)之製造方法。 當積體電路的積集度增加，其所需的金屬內連線 (Interconnect)數目也跟者增加’因此兩層以上的金屬層§受 計，便逐漸成爲許多積體電路所必須採用的方法。當積體 電路的積集度持續增加’對於製造良率佳，以及可靠度好 的金屬內連線的困難度也會增加；金屬鑲嵌法係一種在介 電層中先蝕刻出金屬內連線的溝渠’再塡入金屬當作內連 線的方法，此法可以滿足製程中對甲可靠度及高良率內連 線的要求，所以此法將成爲在深次微米(Sub-Quai.tei. Mi_n> 中內連線製造方法的最佳選擇。 第1A至1C圖係繪示習知雙重i屬鑲嵌的製造流程剖 面圖。請參照第1A圖，提供一基底10，此基底1〇上已形 成有導體層14。此導體層14係用來賴接至基底1〇上其他 欲導通之結構(未顯示）。並且導體層14與更包括形成有內 金屬介電層12,用以避免導體層14其他欲導通之結構之 間，在非預設爲導通的位置上產生不當的導通。 接著，例如使用低壓化學氣相沉積法，形成一層氧化 層16覆蓋導體層14。並且，例如使用低壓化學氣相沉積 法，形成一層隔離層18覆蓋氧化層16，其中隔離層18之 材質例如爲氮化矽（SiUcon Nitnde)。然後，同樣例如使用 低壓化學氣相沉積法，形成一層氧化層20覆蓋隔離層18。 接著’上一光阻層21定義氧化層20，暴露出部份的氧化 層20’其中此氧化層20上暴露出的部份對應於導體層14。 本紙張尺度適用中國國家標率（CNS ) A4规格（210X297公釐） f碕先閲讀背面之注項再填寫本頁)3284twf.doc / 〇〇i A7 B7 ^ " ^ χ0M-Τ! · Λ '^^ 竹 ， ^ 印 " V. Description of the Invention (i) The present invention relates to a semiconductor process, and In particular, it relates to a manufacturing method of dual metal damascence. When the integration degree of integrated circuits increases, the number of metal interconnects required by them also increases. Therefore, two or more metal layers have been calculated and gradually become a method that many integrated circuits must adopt. . When the integration degree of integrated circuits continues to increase, the difficulty of manufacturing metal interconnects with good yield and reliability will also increase; the metal damascene method is a type of metal interconnects first etched in the dielectric layer The trench is re-introduced into the metal as an internal interconnection method. This method can meet the requirements of the reliability and high-yield internal interconnection in the process, so this method will become a sub-micron (Sub-Quai.tei. Mi_n > The best choice for the manufacturing method of the inner and inner interconnects. Figures 1A to 1C are cross-sectional views showing the manufacturing process of a conventional dual i-type damascene. Please refer to Figure 1A to provide a substrate 10 on which the substrate 10 has been A conductor layer 14 is formed. The conductor layer 14 is used to connect to other structures (not shown) on the substrate 10 (not shown). The conductor layer 14 and the inner metal dielectric layer 12 are formed to avoid the conductor. The layer 14 is improperly conducted between other structures to be conducted at a position other than the predetermined position. Then, for example, a low-pressure chemical vapor deposition method is used to form an oxide layer 16 to cover the conductor layer 14. And, for example, a low voltage is used. Chemical vapor deposition An isolation layer 18 covers the oxide layer 16, and the material of the isolation layer 18 is, for example, silicon nitride (SiUcon Nitnde). Then, an oxide layer 20 is also formed to cover the isolation layer 18, for example, using a low pressure chemical vapor deposition method. A photoresist layer 21 defines an oxide layer 20, and an exposed portion of the oxide layer 20 'is exposed. The exposed portion of the oxide layer 20 corresponds to the conductor layer 14. This paper standard applies to China National Standard (CNS) A4 specifications ( 210X297 mm) f 碕 read the notes on the back before filling in this page)
284twf.doc/008 A7 B7 五、發明説明（> ) 一" 請參照第1B圖，使用傳統的微影蝕刻技術，蝕刻暴 露出的氧化層20,並且往下蝕刻穿過隔離層18’以形成 —開口 22暴露出氧化層16。然後移除光阻層21 ’移除的 方法例如爲使用氧電漿法。接著，上另一光阻層24進一 步定義氧化層20，暴露出開口 22與部份的氧化層20，其 中更包括暴露出開口 22兩側之部份氧化層20。 請參照第1C圖’使用傳統的微影蝕刻技術，繼續蝕 刻開口 22中所暴露出氧化層16，藉以使得開口 22進一步 暴露出隔離層18，以及蝕刻光阻層24所暴露出的氧化層 20與開口 22兩側之部份氧化層20，以分別形成一開口 26 與28，分別暴露出隔離層18。其中，開口 28更包栝暴露 出開口 22。 接著’例如使用氧電漿法，移除光阻層24。然後，例 如使用濺鍍法或化學氣相沉積法，形成一導體層30塡入 於開口 22與28中，接觸至導體層14，並且塡入開口 26 中。 然後，進行後續的步驟以完成雙重金屬鑲嵌之製造。 然而’此後續製程爲熟習此技藝者所能輕易完成，故此處 不再贅述。 然而，此後續製程，因爲需要進行兩次上光阻及微影 步驟’所以製程上較複雜，而且容易產生對焦不準的現象。 因此本發明的主要目的就是在提供一種雙重金屬鑲嵌 之製造方法，僅需使用一次上光阻及微影步驟，因此製程 簡單且不會產生對焦不準的現象。 4 本纸張尺度適州中國國家標牟（CNS ) A4规格（210X297公釐） ----·-----k裝-- I#先閲讀背面之注f項存填寫本茛) 訂 好浐部屮^e^/:JhJ消泠合竹W印絮 3284twf . doc/008 麫妒部十^irir石τ·ίΑφ;^竹；^印絮 A7 B7 五、發明説明（）） 根據本發明的目的，提出一種雙重金屬鑲嵌之製造方 法，包括形成一具有突起部份之氧化層覆蓋基底上的導體 層，並且此突起部份對應於導體層。接著，形成一隔離層， 覆蓋氧化層。形成一塗佈層覆蓋隔離層。然後，例如使用 化學機械硏磨法去除此突起部份，以形成一開口，其中此 開口對應於導體層。以及，進行其他後續步驟。 因此，本發明之方法可以比習知技藝省一次上光阻及 微影步驟，並且製程較簡單。 爲讓本發明之上述目的、特徵、和優點能更明顯易懂， 下文特舉一較佳實施例，並配合所附圖式，作詳細說明如 下： 圖式之簡單說明= 第1A至1C圖係繪示習知雙重金屬鑲嵌的製造流程剖 面圖；以及 第2A至2C圖係繪示依照本發明一較佳實施例的一種 雙重金屬鑲嵌的製造流程剖面圖；以及 第3A至3C圖係繪示依照本發明一較佳實施例的一種 雙重金屬鑲嵌的製造流程剖面圖。 圖示標記說明： 10、50 :基底 12、52 :內金屬介電層 14、30、53、54、68 :導體層 16、20、56、60、160 :氧化層 18、58 :隔離層 (讀先閲讀背面之注意事項再填寫本頁}284twf.doc / 008 A7 B7 V. Description of the invention (>) I " Please refer to Figure 1B, using the traditional lithographic etching technique, to etch the exposed oxide layer 20, and etch down through the isolation layer 18 ' To form—the opening 22 exposes the oxide layer 16. A method of removing the photoresist layer 21 'is, for example, an oxygen plasma method. Next, another photoresist layer 24 is further defined as the oxide layer 20, and the opening 22 and a part of the oxide layer 20 are exposed, which further includes a part of the oxide layer 20 on both sides of the opening 22 being exposed. Please refer to FIG. 1C. Using conventional lithographic etching techniques, the oxide layer 16 exposed in the opening 22 is continuously etched, so that the opening 22 further exposes the isolation layer 18 and the oxide layer 20 exposed by the photoresist layer 24 is etched. A part of the oxide layer 20 on both sides of the opening 22 is formed to form an opening 26 and 28 respectively, and the isolation layer 18 is exposed respectively. Among them, the opening 28 further exposes the opening 22. The photoresist layer 24 is then removed, for example, using an oxygen plasma method. Then, for example, using a sputtering method or a chemical vapor deposition method, a conductor layer 30 is formed and is inserted into the openings 22 and 28, contacts the conductor layer 14, and is inserted into the opening 26. Then, the subsequent steps are performed to complete the manufacture of the dual metal damascene. However, this follow-up process can be easily completed by those skilled in this art, so it will not be repeated here. However, in this subsequent process, the photoresist and lithography steps are required twice, so the process is more complicated, and the phenomenon of in-focus is easy to occur. Therefore, the main purpose of the present invention is to provide a method for manufacturing a dual metal damascene, which only requires the photoresist and lithography steps to be used once, so the manufacturing process is simple and the phenomenon of inaccurate focusing does not occur. 4 The size of this paper is suitable for China National Standards (CNS) A4 (210X297 mm) ---- · ----- k-pack-I # first read the note f on the back and fill in the buttercup. Order好 浐 部 屮 ^ e ^ /: JhJ Xiaolinghezhu W Yinxuan 3284twf. Doc / 008 jealousy ten ^ irir stone τ · ίΑφ; ^ bamboo; ^ Yinxuan A7 B7 V. Description of the invention () An object of the present invention is to provide a method for manufacturing a dual metal damascene, which includes forming an oxide layer having a protruding portion to cover a conductive layer on a substrate, and the protruding portion corresponds to the conductive layer. Next, an isolation layer is formed to cover the oxide layer. A coating layer is formed to cover the isolation layer. Then, the protruding portion is removed, for example, using a chemical mechanical honing method to form an opening, wherein the opening corresponds to the conductor layer. And, perform other subsequent steps. Therefore, the method of the present invention can save the photoresist and lithography steps once compared to the conventional technique, and the manufacturing process is simpler. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description as follows: Brief description of the drawings = FIGS. 1A to 1C FIG. 2 is a cross-sectional view showing a manufacturing process of a conventional double metal inlay; and FIGS. 2A to 2C are cross-sectional views showing a manufacturing process of a dual metal inlay according to a preferred embodiment of the present invention; and FIGS. 3A to 3C are A cross-sectional view showing a manufacturing process of a dual metal inlay according to a preferred embodiment of the present invention. Description of icons: 10, 50: substrates 12, 52: inner metal dielectric layers 14, 30, 53, 54, 68: conductor layers 16, 20, 56, 60, 160: oxide layers 18, 58: isolation layers ( Read the notes on the back before filling in this page}
本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 3284twf.doc/008 A7 B7 五、發明説明（t ) 21、 24、62 :光阻層 22、 26、28、59、64、159、164 :開口 57、61 :突起部份 7 0 :塗佈層 實施例 第2A至2C圖係繪示依照本發明一較佳實施例的一種 雙重金屬鑲嵌的製造流程剖面圖。請參照第2A圖，提供 一基底50，此基底50上已形成有導體層54與53。此導體 層54係用來耦接至基底50上其他欲導通之結構（未顯示）。 並且導體層54與更包括形成有內金屬介電層52，用以避 免導體層54其他欲導通之結構之間，在非預設爲導通的 位置上產生不當的導通。其中導體層54的寬度較寬，而 導體層53的寬度較窄。 接著，例如使用高密度電漿（High Density Plasma ; HDP) 化學氣相沉積法，形成一層氧化層56覆蓋導體層53與54。 因爲高密度電漿化學氣相沉積法，在沉積過程中具有獨特 的削角現象，因此會產生較佳的突起部份57與61。其中， 此突起部份61的位置對應於導體層54，而突起部份57的 位置對應於導體層53。並且，因爲導體層54的寬度大於 導體層53，所以突起部份61的突起高度大於突起部份57 的突起高度。 然後，例如使用低壓化學氣相沉積法，形成一層隔離 層58覆蓋氧化層56，其中隔離層58之材質例如爲氮化矽 或氮氧化矽。其中，此隔離層58會隨著氧化層56的表面 6 本紙張尺度國國家標隼（CNS ) A4規格（210X297公釐) (請先閱讀背面之注意事項再填寫本頁) 、1Τ 4r 284twf.doc/008 A7 B7 五、發明説明（t) 而起伏，並且隔離層58上高起之處對應%突起部份57與 61 ° 請參照第2B圖，接著，例如使用化學機械硏磨(Chermcal Mechanical Polishmg ; CMP)法，去除對應士突起部份61之 隔離層58，以形成開口 59暴露出氧化層56。因爲，突起 部份57的高度不高，所以此硏磨步驟並不會去除對應於 突起部份57之隔離層58。並且，使得殘留的隔離層58與 暴露出的氧化層56，大約位於同一高度。然後，例如使用 低壓化學氣相沉積法，形成一層氧化層60覆蓋隔離層58 與暴露出的氧化層56。 本發明之特徵即是使用化學機械硏磨法，去除對應於 突起部份59之隔離層58，以形成開口 59，因此可以比習 知技藝省一次上光阻及微影步驟。並且，當導體層54與 導體層54之間，同時具有較高的突起部份與較低的突起 部份時。此硏磨步驟只會使得較高的突起部份形成開口， 而不會在較少的突起部份上形成開口。故，在後續步驟中 沉積另一導體層時，即可以避免此導體層與下方的導體層 產生不適當的導通。 請參照第2B圖，上一塗佈層62，例如光阻層62或是 其他有機流體層62(polymide) ’來定義氧化層60。此光阻 層62暴露出對應於開口 59之氧化層60。並且此光阻層62 所暴露出之區域約大於開口 59,因此也會暴露出開口 59 兩側之隔離層58。 請參照第2C圖，然後，使用傳統的微影蝕刻技術， 本紙張尺度通Λ中國國家標準（CNS ) A4規格（210X297公嫠） (請先閱讀背面之注項再填寫本页) 訂This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 3284twf.doc / 008 A7 B7 V. Description of the invention (t) 21, 24, 62: Photoresist layer 22, 26, 28, 59, 64, 159, 164: openings 57, 61: protrusions 70: coating layer embodiments 2A to 2C are cross-sectional views showing a manufacturing process of a dual metal inlay according to a preferred embodiment of the present invention. Referring to FIG. 2A, a substrate 50 is provided. The substrate 50 has conductor layers 54 and 53 formed thereon. The conductive layer 54 is used for coupling to other structures (not shown) on the substrate 50 to be conducted. In addition, the conductive layer 54 and the inner metal dielectric layer 52 are formed to prevent other conductive structures of the conductive layer 54 from being conducted, and improper conduction is generated at a position that is not preset to be conductive. Among them, the width of the conductor layer 54 is wide, and the width of the conductor layer 53 is narrow. Next, for example, a high density plasma (High Density Plasma; HDP) chemical vapor deposition method is used to form an oxide layer 56 to cover the conductor layers 53 and 54. Because the high-density plasma chemical vapor deposition method has a unique chamfering phenomenon during the deposition process, better protruding portions 57 and 61 will be generated. Among them, the position of the protruding portion 61 corresponds to the conductive layer 54, and the position of the protruding portion 57 corresponds to the conductive layer 53. Also, since the width of the conductor layer 54 is larger than the conductor layer 53, the protrusion height of the protrusion portion 61 is greater than the protrusion height of the protrusion portion 57. Then, for example, a low-pressure chemical vapor deposition method is used to form an isolation layer 58 covering the oxide layer 56, wherein the material of the isolation layer 58 is, for example, silicon nitride or silicon oxynitride. Among them, this isolation layer 58 will follow the surface of the oxide layer 56 and the national paper standard (CNS) A4 size (210X297 mm) of paper size (please read the precautions on the back before filling this page), 1T 4r 284twf. doc / 008 A7 B7 V. Description of the invention (t) and undulations, and the raised portion on the isolation layer 58 corresponds to the% protrusions 57 and 61 ° Please refer to Figure 2B, and then, for example, use chemical mechanical honing (Chermcal Mechanical Polishmg; CMP) method, removing the isolation layer 58 corresponding to the protrusion portion 61 to form an opening 59 to expose the oxide layer 56. Since the height of the protruding portion 57 is not high, this honing step does not remove the isolation layer 58 corresponding to the protruding portion 57. In addition, the remaining isolation layer 58 and the exposed oxide layer 56 are positioned at approximately the same height. Then, for example, a low-pressure chemical vapor deposition method is used to form an oxide layer 60 covering the isolation layer 58 and the exposed oxide layer 56. A feature of the present invention is to use a chemical mechanical honing method to remove the isolation layer 58 corresponding to the protruding portion 59 to form the opening 59, so that the photoresist and lithography steps can be saved in one step compared with the conventional technique. Also, when the conductor layer 54 and the conductor layer 54 have both a high protrusion portion and a lower protrusion portion at the same time. This honing step only allows openings to be formed in the higher protrusions, and does not form openings in the fewer protrusions. Therefore, when another conductor layer is deposited in a subsequent step, it is possible to avoid an inappropriate conduction between this conductor layer and the underlying conductor layer. Referring to FIG. 2B, the previous coating layer 62, such as a photoresist layer 62 or other organic fluid layer 62 (polymide) ', defines the oxide layer 60. This photoresist layer 62 exposes an oxide layer 60 corresponding to the opening 59. And the area exposed by the photoresist layer 62 is larger than the opening 59, so the isolation layers 58 on both sides of the opening 59 are also exposed. Please refer to Figure 2C. Then, using traditional lithographic etching technology, this paper is sized according to Chinese National Standard (CNS) A4 (210X297 cm) (Please read the note on the back before filling this page) Order
4T 3284twf-doc/008 3284twf-doc/008 經濟部中央棣準局*C工消費合作社印策 A7 ______B7___ 五、發明说明（厶） 蝕刻氧化層60，用以形成開口 64，其中更包括進一步往 下蝕刻開口 59暴露出之氧化層56，使得開口 59進一步暴 露出導體層54。然後，例如使用濺鍍法或化學氣相沉積法， 形成一導體層68塡入開口 59中接觸導體層54，並覆蓋開 口 64所暴露出的隔離層58。其中，導體層68之材質例如 爲鎢，或其他導電材料。 接著’進行後續步驟以完成雙重金屬鑲嵌之製造。然 而此後續製程非關於本發明之特徵，故此處不再贅述。 因此’本發明的特徵包括使用高密度電漿化學氣相沉 積法與電漿增益化學氣相沉積法形成氧化層56，然後形成 隔離層58 ’藉以產生突起部份57。接著，以化學機械硏 磨法，去除隔離層58較大突起之部份，用以形成開口 59。 因此可以比習知技藝省一次上光阻及微影步驟，所以製程 比習知技藝更簡單。 本發明之另一種雙重金屬鑲嵌之製造方法，包括同樣 進行第2A圖的製程，以完成如第2A圖所示之結構。 接著，請參照第3A圖’形成一層塗佈層70覆蓋隔離 層58，藉以獲得平坦之表面。此塗佈層70之材質例如爲 光阻或旋塗式玻璃或者是其他可獲得平坦表面之材質。 接著，例如使用化學機械硏磨法或者使用蝕刻法，去 除對應於突起部份61之塗佈層70與隔離層58，以形成開 口 159暴露出氧化層56。若使用蝕刻法，則蝕刻法對於塗 佈層70與隔離層58具有相同的蝕刻速率。因爲，突起部 份57的高度不高，所以此硏磨步驟並不會去除對應於突 8 本紙張家轉（CNS) A4祕（21〇Χ29ϋ " ' (請先閲讀背面之注意事項再填寫本頁) 〔裝. 訂 3284twf . doc/008 3284twf . doc/008 經濟部中决標率局貝工消费合作社印簟 A7 B7 _ 五、發明説明（0 ) 起部份57之隔離層58。並且，使得殘留的塗佈層70、隔 離層58與暴露出的氧化層56，大約位於同一高度。 請參照第3B圖，然後，例如使用低壓化學氣相沉積 法，形成一層氧化層160覆蓋隔離層58、塗佈層70與暴 露出的氧化層56。上一光阻層162定義氧化層160，此光 阻層162暴露出對應於開口 159之氧化層160。並且此光 阻層162所暴露出之區域約大於開口 159,因此也會暴露 出開口 159兩側之隔離層58與塗佈層70。 請參照第3C圖，然後，使用傳統的微影蝕刻技術， 蝕刻氧化層160,用以形成開口 164,其中更包括進一步 往下蝕刻開口 159暴露出之氧化層56，使得開口 159進一 步暴露出導體層54。然後，例如使用濺鍍法或化學氣相沉 積法，形成一導體層168塡入開口 159中接觸導體層54， 並覆蓋開口 164所暴露出的隔離層58。其中，導體層168 之材質例如爲鎢，或其他導電材料。 接著，進行後續步驟以完成雙重金屬鑲嵌之製造。然 而此後續製程非關於本發明之特徵，故此處不再贅述。 因此，本發明的特徵包括使用高密度電漿化學氣相沉 積法與電漿增益化學氣相沉積法形成氧化層56。然後形$ 隔離層58，接著形成塗佈層70覆蓋隔離層58，藉以產生 突起部份57。接著，以化學機械硏磨法或蝕刻法，去除隔 離層58較大突起之部份，用以形成開口 159。因此可以比 習知技藝省一次上光阻及微影步驟，所以製程比習知技藝 更簡單。 9 ^^張纽逋用中國國家標準（€叫八4躲（21(^297公釐) - (請先閱讀背面之注意事項再填寫本頁) •裝. 域· 3284twf.doc/008 3284twf.doc/008 經濟部中央標準局員工消费合作社印製 A7 B7 五、發明説明（$ ) 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 本紙張尺度逍用中困國家標準（CNS > A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁)4T 3284twf-doc / 008 3284twf-doc / 008 Central Government Standards Bureau of the Ministry of Economic Affairs * C Industrial Consumer Cooperatives Co., Ltd. A7 ______B7___ V. Description of the Invention (厶) The oxide layer 60 is etched to form the opening 64, including further down The oxide layer 56 exposed by the opening 59 is etched, so that the opening 59 further exposes the conductor layer 54. Then, for example, a sputtering method or a chemical vapor deposition method is used to form a conductive layer 68 that is inserted into the opening 59 to contact the conductive layer 54 and cover the isolation layer 58 exposed by the opening 64. The material of the conductive layer 68 is, for example, tungsten or other conductive materials. Then, the subsequent steps are performed to complete the manufacture of the dual metal damascene. However, this subsequent process is not related to the features of the present invention, so it will not be repeated here. Therefore, the feature of the present invention includes the use of a high-density plasma chemical vapor deposition method and a plasma gain chemical vapor deposition method to form an oxide layer 56 and then an isolation layer 58 'to generate the protruding portion 57. Next, the large protruding portion of the isolation layer 58 is removed by a chemical mechanical honing method to form an opening 59. Therefore, the photoresist and lithography steps can be saved once compared to the conventional technique, so the process is simpler than the conventional technique. Another manufacturing method of the dual metal inlay of the present invention includes similarly performing the process of FIG. 2A to complete the structure shown in FIG. 2A. Next, referring to FIG. 3A, a coating layer 70 is formed to cover the isolation layer 58 so as to obtain a flat surface. The material of the coating layer 70 is, for example, photoresist or spin-on glass, or other materials capable of obtaining a flat surface. Next, for example, a chemical mechanical honing method or an etching method is used to remove the coating layer 70 and the isolation layer 58 corresponding to the protruding portion 61 to form an opening 159 to expose the oxide layer 56. If an etching method is used, the etching method has the same etching rate for the coating layer 70 and the isolation layer 58. Because the height of the protruding portion 57 is not high, this honing step does not remove the paper corresponding to the protruding 8 paper (CNS) A4 secret (21〇 × 29ϋ " '(Please read the precautions on the back before filling This page) [Packing. Order 3284twf. Doc / 008 3284twf. Doc / 008 In the Ministry of Economic Affairs, the bidding rate of Shellfish Consumer Cooperatives Co., Ltd. A7 B7 _ V. Insulation layer 58 of Part 57 from the description of the invention (0). So that the remaining coating layer 70, the isolation layer 58 and the exposed oxide layer 56 are located at the same height. Please refer to FIG. 3B, and then, for example, use a low pressure chemical vapor deposition method to form an oxide layer 160 to cover the isolation layer. 58, the coating layer 70 and the exposed oxide layer 56. The previous photoresist layer 162 defines the oxide layer 160, and this photoresist layer 162 exposes the oxide layer 160 corresponding to the opening 159. And the photoresist layer 162 is exposed The area is larger than the opening 159, so the isolation layer 58 and the coating layer 70 on both sides of the opening 159 are also exposed. Referring to FIG. 3C, the conventional lithographic etching technique is used to etch the oxide layer 160 to form Opening 164, which includes further etching down The oxide layer 56 exposed by the opening 159 causes the opening 159 to further expose the conductive layer 54. Then, for example, using a sputtering method or a chemical vapor deposition method, a conductive layer 168 is formed and is inserted into the opening 159 to contact the conductive layer 54 and cover it. The isolation layer 58 exposed by the opening 164. The material of the conductive layer 168 is, for example, tungsten or other conductive materials. Then, the subsequent steps are performed to complete the manufacture of the dual metal inlay. However, this subsequent process is not related to the features of the present invention. Therefore, the details are not described here. Therefore, the features of the present invention include the use of a high-density plasma chemical vapor deposition method and a plasma gain chemical vapor deposition method to form an oxide layer 56. Then, an isolation layer 58 is formed, and then a coating layer 70 is formed. Cover the isolation layer 58 so as to generate the protruding portion 57. Then, the larger protruding portion of the isolation layer 58 is removed by chemical mechanical honing or etching to form the opening 159. Therefore, it can be saved once compared to the conventional technique Photoresist and lithography steps, so the process is simpler than the know-how. 9 ^^ Zhang Niuyu uses Chinese national standard (€ 8 to hide) (21 (^ 297mm)-(Please read first Please fill in this page again if you need to pay attention to it.) • Equipment. Domain · 3284twf.doc / 008 3284twf.doc / 008 Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description ($) Although the present invention has been compared with The preferred embodiment is disclosed as above, but it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. The attached application patent shall prevail. This paper is a national standard for easy use (CNS > A4 size (210X297 mm) (Please read the precautions on the back before filling in this page)