^ 修正丨！ A7 -“i。vi ------- 五、發明説明（ ) 經濟部中央橾準局員工消費合作社印裂 一非等向性導體（anisotropic conductor)5包含樹脂及 導電性之顆粒’此非等向性導體5可以填補在半導體晶片} 及2，及在絕緣電路膜3之間的連接部份，及可以填補在絕 緣電路膜3及導線框之内側導線4之間的連接部份，以將上 面之元件作電氣連接。 一個預定區域係用一塑膜化合物（molding compound) 包裹起來，以形成一個包裝主體6,此預定區域包含半導 體晶片1及2，絕緣電路膜3及内側導線4。具有預定尺寸之 波紋(dimple)6a在包裝主體6之下側部份形成，此6a具有兩 行（column)，以相對應於襯墊電極之陣列，而導線框之外 側導線7會分別位在波紋6a之内。其中外側導線7之末端部 份由包裝主體之中央部份向外折疊’而在不同行上之外側 導線則是折向相反之方向。而這些外側導線之折疊末端為 待電氣連接到一外界元件之部份。 現在我們將配合第4圖及第5A — 5C圖，說明在上述 包裝中所使用之絕緣電路膜3之結構。 參考第4圖及第5A — 5B圖，此絕緣路膜3具有由聚合 物組成之基底膜3a及一金屬線3b，此金屬線3b分別在基底 膜3a之上側及下側部份上形成。如第5B圖所示，在金屬線 3b之上形成多數之内側導線3C及多數之外側導線3d，其 中’多數之内側導線3c將會連接到接合襯墊ia&lb，而多 數之外侧導線3d則將會連接到第4圖中之内側導線4,以在 半導體晶片1及2，及在導線框之内側導線4之間形成一個 電氣連接。除此之外，在絕緣電路膜3之上設立一個通過 (請先閡讀背面之注意事項再填寫本頁) 、νδ i 本久-、故尺度4用中國國家择準（CNS ) A4夫?.格（21〇X：?97公焚） A7 B7 五、發明説明（） 發明背景 <發明領域> 本發明係有關於一個半導體包裝，更具體而言，本發 明係有關於一種多層底部導線包裝（multe_layer b〇u〇m lead package)，此多層底部導線包裝具有一導線框 (leadfmme)，其接出導線係在導線主體之底侧部份露出。 <習知技藝之説明> 在大多數之習知的半導體包裝當中，一個半導體晶片 係塑模在一個樹脂之内，此樹脂例如可為環氧塑膜化合物 (epoxy molding c〇mpound)，此種包裝方式稱為單排線包 裝(single in line package)。習知之包裝具有一個導線框， 其外接腳自包裝主體向外伸出，因此可以提供在晶片及外 界元件間信號傳輸之路徑。 —、在如此之傳統的半導體包裝之中，係藉由下列步驟來 完成包裝：（1)一個晶元黏結步驟（adieb〇ndingpr〇cess) 經濟部中央標準局員工消費合作社印裝 ------kl·---- 裝-- (請先閱面之注意事項再填寫本頁) 、’將半導體晶片（semiconductor)安裝在一個導線框之襯墊 之上，（2)一個接線黏結步驟，將在襯塾上之半導體晶片使 用一金屬線電連接至内侧導線；（3)一個塑膜步驟;使用環 氧$脂(epoxy resin)，將含有晶片、内侧導線及金屬線之 予.、Λ邛伤，包裹起來，以形成一個包裝主體 =dy) ; (4)一個修整/形成步驟，將支撐導線框中每一導 線之支撐棒(dambar)加以修整，以分成獨立之包裝，並I 將由包裝主體延伸出來之外侧導線折成預定形式。 本紙法尺度適用中國國家榡準（⑽）μ規格（2丨ο,〆29?公楚 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（ 參考第2圖，連接到絕緣膜3之外側襯墊3d之内側引 線4之連接部份覆有一個預定之金屬，如銀、錫或是錮， 以增加接合力量。 在第4圖中所示之非等向性導體5含有液態或是固態之 樹脂’及含有導電顆粒。上述之樹脂則可使用環氧樹脂，或 是已轉換之環氧樹脂(transformed epoxy resin)、聚醋（p〇iy estor)或是已轉換之聚合物(transformed p〇iymer)、丙烯酸醋 (acryloster)或已轉換之酯（transformecj ester)、石夕樹脂（siHc〇n resin)、盼樹脂（phenoXy resin)、聚胺基甲酸乙醋 (polyurethane) '多硫化合物（p〇iySUifide)、氰基丙稀酸 (cyanoacrylate)、聚補體(polyalexin)，及其它可在受到熱及紫 外光輻射後或是置於室溫下可以硬化之聚合物。 上述用來導電之顆粒包含銀、鎳、銦、錫 '氧化銦錫 或是這些材料之合金，或是電阻係數大於1〇-8Ω/αη之金 屬。這些顆粒之大小在3/zm—15/zm之間較佳，而且這些 顆粒之形狀可為圓形、四邊形、三角形、六角形、方錐形 或是三角錐形。 參考第3A圊及第3B圖，多數在包裝主體6内部形成之 波紋6a會在包裝主體6之下側部份處形成，而且導線框之 外側導線7會置於包裝主體6之波紋6a之内。外側導線7之 末端部份最好由外側導線7末端處折疊一個預定之長度， 而且這個被折疊之部份會與包裝主體6之底部表面有相同之 位準。波紋6a位在包裝主體6之中，而且以鋸齒之形狀排 成兩行’而且相對應於此波紋6a之外側導線7亦會依相似 11 本纸疼疋及轉用中國國家嫜準（CNS ) A4規格（210X297公嫠） (請先ΪΚΙ讀背面之注意事續再填寫本頁) 訂 岐！ 經濟部中央標準局員工消費合作社印製 、發明説明（ 如上列方式所形成之半導體包裝作 t ^^(pnnted circuit board)±^® t , IS板上之圖案而介以與外界元件進行 如上文所説明之半導體包裝只能塑膜 由於導線框之需要有—個只放置 之=擴有其限制。除此之外，為了在= U冓中，媒兩個或是更多個晶片，就 ;晶元襯墊，造成在降低包裝尺寸上之限制及匕ί】 產程序中先進技術需求之限制。 "生 ^者^於包裳主體及接腳組態（咖eQnfig脳㈣之 際標準來決定，因此傳統上之半導體包裝會 Γ陆制而無糾足在特定場合巾，使用者之需求，如接 腳陣列之變化(alteration of pin array)。 在此同時，為了解決使用突出導線之半導體 遭遇到之問題，在過去曾有人提出-誠部導 =〇u〇m lead paekage)，其中在包裝主體之下侧部份中有 路出之外侧導線。然’在逞樣的包裝中需要用來支撐晶 片疋晶元健及支觀晶元襯墊之支撐棒(tiebar<)，同時， 在此半導體包裝之中，晶片及導線框之内侧導線也要使用 一個金屬線而彼此互相連接。由於在支撐棒及包裝之間有 微小之間隙存在，溼氣會滲透進來，造成可靠度下降，而 士接線及内侧導線之間會有接合失敗（b〇nding failure)之 情況會發生，因此對於包裝尺寸之降低，亦薈造成限制。 -------------种衣------tT------.^ (請先閲讀背面之注意事項再填寫本頁) Μ氏張尺度速用中國國家標準（CNS ) A4規格（2丨Ox297公釐） 亮及擦洗過程 <發明總論> 个赞明（一 經濟部中央標準局員工消費合作社印11 A7 B7 五·、發明説明（ 除^卜外’由傳統之底部導線包裝要 進行，因此，此項找過程需要額 裝技 哲姑料P 提供—種多層導線包裝，此種包 現-個輕、薄、短、小之叫並且有 ㈣—目的在於提供—種多層底部導線包袭， 用ίϋΐ術可以輕易組裝、提高可靠度及可輕易符合使 本發明之其它特徽優點可在下列 微及!點部份可由説明了解，而部份可;=發 侍到了 II而本發明之目的及其它優點將可由 p" $及文字説明，以及附加巾請專利範圍中舉出 之特疋結構而更為人所瞭解。 | 糾iLi據本發明之目的而實現上述及其它之優點，本 發^所提供之多層底料線包裝包含：⑷射錄之接合 半導體晶片；（b)—個絕緣電路膜，其具有：⑴呈有 絕緣基底膜；（ii)在基底膜之上侧及下側ί面 7之第一多數金屬線；（iH)多數之突起、導電内侧 襯』’其各別在第一金屬線上形成，並且各別/連至每—半 本紐尺度賴中闕家標準（⑽）M規格（2丨ΰχ 297公瘦^ Fix 丨! A7-"i.vi ------- V. Description of the invention () An employee of the Central Government Bureau of the Ministry of Economic Affairs of the Consumer Cooperative printed an anisotropic conductor 5 containing resin and conductive particles' this The anisotropic conductor 5 can fill the connecting portion between the semiconductor wafer} and 2 and the insulating circuit film 3, and can fill the connecting portion between the insulating circuit film 3 and the inner conductor 4 of the lead frame. The above components are used for electrical connection. A predetermined area is wrapped with a molding compound to form a packaging body 6. The predetermined area includes the semiconductor wafers 1 and 2, the insulating circuit film 3, and the inner conductor 4 A dimple 6a with a predetermined size is formed on the lower part of the packaging body 6. This 6a has two columns to correspond to the array of pad electrodes, and the leads 7 on the outer side of the lead frame are respectively positioned. Within the corrugations 6a. The end portions of the outer wires 7 are folded outward from the central portion of the packaging body, and the outer wires on different rows are folded in opposite directions. The folded ends of these outer wires are The part that is electrically connected to an external component. Now we will explain the structure of the insulating circuit film 3 used in the above package in conjunction with Figures 4 and 5A-5C. Referring to Figures 4 and 5A-5B, This insulating road film 3 has a base film 3a composed of a polymer and a metal wire 3b, and the metal wires 3b are formed on the upper and lower portions of the base film 3a, respectively. As shown in FIG. 5B, the metal wire 3b A majority of the inner leads 3C and a majority of the outer leads 3d are formed thereon, among which the 'most of the inner leads 3c will be connected to the bonding pad ia & lb, and the majority of the outer leads 3d will be connected to the inner side in FIG. 4. Leads 4 to form an electrical connection between the semiconductor wafers 1 and 2 and the leads 4 inside the lead frame. In addition, a pass is established on the insulating circuit film 3 (please read the precautions on the back first) (Fill in this page again), νδ i Benjiu-, so the scale 4 uses the Chinese national standard (CNS) A4 husband ?. (21〇X:? 97 public incineration) A7 B7 V. Description of the invention () Background of the invention < FIELD OF THE INVENTION The present invention relates to a semiconductor package, and more In particular, the present invention relates to a multi-layer bottom lead package (multe_layer b〇u〇m lead package). The multi-layer bottom lead package has a lead frame (leadfmme). The lead wires are connected to the bottom portion of the lead body. ≪ Explanation of conventional techniques > In most conventional semiconductor packages, a semiconductor wafer is molded in a resin, and this resin may be, for example, an epoxy molding compound. ), This type of packaging is called a single in line package. The conventional package has a lead frame, and its external legs protrude outward from the package body, so it can provide a signal transmission path between the chip and the external components. — In such traditional semiconductor packaging, packaging is accomplished by the following steps: (1) a die bonding step (adiebooning pr〇cess) printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ---- --kl · ---- Assembly-- (Please read the precautions on this page before filling in this page), 'Install the semiconductor chip on the pad of a lead frame, (2) a bonding step , The semiconductor wafer on the liner is electrically connected to the inner wires using a metal wire; (3) a plastic film step; using epoxy resin, the wafer, the inner wires and the metal wires will be included., Λ 邛 wound, wrapped to form a packaging body = dy); (4) a trimming / forming step, trim the support bar (dambar) of each wire in the lead frame to separate into separate packages, and I The outer side wire extended from the package body is folded into a predetermined form. The size of this paper method is applicable to China's national standard (⑽) μ specifications (2 丨 ο, 〆29? Gongchu A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. The connection portion of the inner lead 4 of the outer pad 3d is covered with a predetermined metal, such as silver, tin, or rhenium, to increase the bonding strength. The anisotropic conductor 5 shown in FIG. 4 contains a liquid or Is a solid resin 'and contains conductive particles. The above resins can be epoxy resins, transformed epoxy resins, polyisocyanates, or converted polymers ( transformed p〇iymer), acrylic vinegar (acryloster) or transformedecj ester, siHccon resin, phenoXy resin, polyurethane 'polysulfide Compounds (p0yySUifide), cyanoacrylate, polyalexin, and other polymers that can harden after being exposed to heat and ultraviolet radiation or at room temperature. The above are used to conduct electricity The particles contain silver and nickel Indium, tin'indium tin oxide or alloys of these materials, or metals with resistivity greater than 10-8Ω / αη. The size of these particles is preferably between 3 / zm-15 / zm, and the shape of these particles It can be circular, quadrangular, triangular, hexagonal, square, or triangular. Referring to Figures 3A 圊 and 3B, most of the corrugations 6a formed inside the packaging body 6 will be on the lower side of the packaging body 6. And the outer lead 7 of the lead frame will be placed inside the corrugation 6a of the packaging body 6. The end portion of the outer lead 7 is preferably folded by a predetermined length from the end of the outer lead 7, and the folded portion Will have the same level as the bottom surface of the packaging body 6. The corrugations 6a are located in the packaging body 6, and are arranged in two rows in a zigzag shape ', and the outer wires 7 corresponding to the corrugations 6a will also be similar to 11 This paper hurts and uses the Chinese National Standard (CNS) A4 specification (210X297) (please read the notes on the back side and fill in this page first) Dingqi! Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs, Invention description (as listed above) The semiconductor package formed by the method is t ^^ (pnnted circuit board) ± ^ ® t, the pattern on the IS board, and the semiconductor package as described above with the external components can only be plastic film due to the need of the lead frame— There are restrictions on placing only = expansion. In addition, in order to mediate two or more wafers, the wafer pads cause restrictions and reduce the size of the package. ] Restrictions on demand for advanced technology in production processes. " 生 ^ 者 ^ is determined by the standard of the package body and the pin configuration (eQnfig 脳 ㈣), so traditionally semiconductor packaging will be made by land without slackening on specific occasions. The needs of users, Such as the change of pin array. At the same time, in order to solve the problems encountered by semiconductors using protruding wires, it has been proposed in the past-sincere guide = 〇u〇m lead paekage), which is in the packaging There is an outer lead in the lower part of the main body. However, a support bar (tiebar <) for supporting the wafer, wafer and wafer support is needed in the same package. At the same time, in this semiconductor package, the inner wires of the wafer and the lead frame are also required. Use a metal wire to connect to each other. Because there is a slight gap between the support rod and the package, moisture will penetrate into it, which will reduce the reliability, and there will be a bonding failure between the driver wiring and the inner conductor. Therefore, for the The reduction in packaging size has also created restrictions. ------------- Seed coat ------ tT ------. ^ (Please read the precautions on the back before filling out this page) National Standard (CNS) A4 specification (2 丨 Ox297 mm) Brightening and scrubbing process < General Introduction of Invention > A tribute (1 printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 11 A7 B7 V. Invention Description Bu Wai 'is carried out by traditional bottom wire packaging, so this process of finding the goods needs to be provided by the amount of technology. A kind of multi-layer wire packaging, this package is a light, thin, short, small and has目的 —The purpose is to provide—a kind of multi-layer bottom wire encapsulation, which can be easily assembled using ϋΐ technology, improve reliability, and can be easily conformed to make other special emblem advantages of the present invention in the following subtle points!可可; = The service has arrived II and the purpose and other advantages of the present invention will be better understood by p " $ and text descriptions, as well as additional special structures listed in the patent scope. | IiLi 本本The object of the invention achieves the above and other advantages. The multi-layer primer line package provided by the present invention contains (B) a bonded semiconductor wafer for recording; (b) an insulating circuit film having: (a) an insulating base film; (ii) a first majority metal line on the upper and lower sides of the base film 7; (IH) Most of the protrusions and conductive inner linings' are formed on the first metal wire, and each / half to one-half of the standard is based on the standard (标准) M specification (2 丨 ΰχ 297) thin
五、發明説明（） 導體晶片之所述接合襯墊；（iv)多數之突起、導電外倒襯 塾，這些外侧襯墊在第一金屬線上形成，並且與多數之内 侧襯墊有一個預定之間距，及（v)多數之第二金屬線，遠婆 第二金屬線沿著多數通過孔之壁面表面上形成，且會速 至每~r半導體晶片之内侧襯墊上面，這些多數之第二金屬 線之作用為將位在基底膜之上侧及下侧表面之内侧襯蛰彼 此連接；（C) 一導線框，此導線框包含一内側導線及〆外側 導線，以將絕緣電路膜之外側襯墊電連接至—個外界元件 之上；及(d)包裝一預定區域之一包裝主體，此預定之 包含半導體晶片、絕緣電路膜及導線框之内側導':或 包裝主體包含多數在電氣連接位置上所形成7 (dimples)，以與外界元件作信號之傳輸，其中> 導2 延伸到此波紋上面，外侧導線之每一末端會曝士爽，，’7會 且與包裝主體之底部表面有相同之位準。 出來，並 須知在上面之一般性說明及在後績之特 為範例，且為説顿質，本發明更進—步 Ί兄明皆 加之申請專利範圍。 " 兄明則參見附 <附圖之簡要説明> 經濟部中央標準局員工消費合作社印裝 明之其它目的及特點可配合附圖説 佳具眩貫例而更為人所了解。這些圖示為：發月《較 實例= 據本發明之，較佳具體 體實包=發明之另，佳具 本纸悵尺度適用中國國家標準（CNS ) A4規格 (210x297公釐） --- Α7 Β7 經濟部中央標準局員工消費合作社印製 五、發明説明（ 第3A及3B圖説明依據本發明之多層底部導線包裝之 外侧導線之下侧部份； 第4圖是一放大剖面圖，顯示依據本發明之多戶底部 導線包裝之主要部份； 胃 第5A圖是一放大之直立剖面圖，説明依據本發明之多 層底部導線包裝中所使用之絕緣電路膜； 弟5B圖是第5A圖之一^固平面圖； 第5C圖是一個放大之剖面圖，説明—通過 hole)之結構；V. Description of the invention () The bonding pads of the conductor wafer; (iv) most of the protrusions and conductive outer inverted linings, these outer pads are formed on the first metal wire, and there is a predetermined Pitch, and (v) the majority of the second metal lines, the far second metal lines are formed along the wall surface of the majority through hole, and will reach the top of the inner pad of each semiconductor wafer, these majority of the second The function of the metal wires is to connect the inner liners located on the upper and lower surfaces of the base film to each other; (C) a lead frame containing an inner lead and an outer lead to connect the outer side of the insulating circuit film The pad is electrically connected to an external component; and (d) a package body of a predetermined area of the package, the predetermined package including the semiconductor wafer, the insulating circuit film, and the inner side of the lead frame; or the package body contains most of the electrical components 7 (dimples) are formed at the connection position for signal transmission with external components, where > Guide 2 extends above this ripple, each end of the outer wire will be exposed, and '7 will be connected to the main body of the package. The bottom surface has the same level. Come out, and note that the general description above and the particulars of the later results are special examples, and for the sake of quality, the present invention goes one step further-the scope of the patent application added by Brother Xiongming. " For brothers, please refer to the attached < Brief description of the attached drawings > Other purposes and features of the printed instructions of the Employees' Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs can be better understood with the accompanying illustrations. These diagrams are: "A comparative example = according to the present invention, a better concrete package = another invention. The size of the paper frame of the tool is applicable to the Chinese National Standard (CNS) A4 specification (210x297 mm) --- Α7 Β7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Illustrations of the invention (Figures 3A and 3B illustrate the lower part of the outer wires of the multilayer bottom wire package according to the present invention; Figure 4 is an enlarged sectional view showing The main part of the multi-family bottom wire packaging according to the present invention; FIG. 5A is an enlarged vertical cross-sectional view illustrating the insulating circuit film used in the multi-layer bottom wire packaging according to the present invention; FIG. 5B is FIG. 5A Figure 1C is a solid plan view; Figure 5C is an enlarged cross-sectional view illustrating the structure through holes);
第6圖疋一平面圖，説明依據本發明之 包裝中所使用之導_;及 ^部U 圖是一平面圖，説明依據本發明之 包裝在塑膜後之狀態。 <較佳具體實例之詳細説明> J在將配合附加圖示，説明本發明之較佳具體實例。 乡考第卜2、3A及3B圖，半導體晶片⑴係用向下 而接合在絕緣電路膜3之上侧及下側部份，在絕 道^日片广上有金屬線圖案(韻311—_服），以在半 面向I心㈣部份，'謂接合襯墊電極設置之位置，係 框之内侧J:膜ί?曰向設置。絕緣電路膜3也連接到導線 氣信號可以傳輸1及2、及外部姑之間，形成電 ---------•裝------訂 (请先閱讀背面之注意事項再填寫本頁) ^ 修正丨！ A7 -“i。vi ------- 五、發明説明（ ) 經濟部中央橾準局員工消費合作社印裂 一非等向性導體（anisotropic conductor)5包含樹脂及 導電性之顆粒’此非等向性導體5可以填補在半導體晶片} 及2，及在絕緣電路膜3之間的連接部份，及可以填補在絕 緣電路膜3及導線框之内側導線4之間的連接部份，以將上 面之元件作電氣連接。 一個預定區域係用一塑膜化合物（molding compound) 包裹起來，以形成一個包裝主體6,此預定區域包含半導 體晶片1及2，絕緣電路膜3及内側導線4。具有預定尺寸之 波紋(dimple)6a在包裝主體6之下側部份形成，此6a具有兩 行（column)，以相對應於襯墊電極之陣列，而導線框之外 側導線7會分別位在波紋6a之内。其中外側導線7之末端部 份由包裝主體之中央部份向外折疊’而在不同行上之外側 導線則是折向相反之方向。而這些外側導線之折疊末端為 待電氣連接到一外界元件之部份。 現在我們將配合第4圖及第5A — 5C圖，說明在上述 包裝中所使用之絕緣電路膜3之結構。 參考第4圖及第5A — 5B圖，此絕緣路膜3具有由聚合 物組成之基底膜3a及一金屬線3b，此金屬線3b分別在基底 膜3a之上側及下側部份上形成。如第5B圖所示，在金屬線 3b之上形成多數之内側導線3C及多數之外側導線3d，其 中’多數之内側導線3c將會連接到接合襯墊ia&lb，而多 數之外侧導線3d則將會連接到第4圖中之内側導線4,以在 半導體晶片1及2，及在導線框之内側導線4之間形成一個 電氣連接。除此之外，在絕緣電路膜3之上設立一個通過 (請先閡讀背面之注意事項再填寫本頁) 、νδ i 本久-、故尺度4用中國國家择準（CNS ) A4夫?.格（21〇X：?97公焚） 五 、發明説明（ A7 B7 經濟部中央標準局負工消費合作社印製 监PaU接在半導體晶片1及2之間的相同端點（亦即， 、二、土CAS，將ras連至RAS)，即可形成一個端黠 #這二卵片會接合到絕緣電路躁3之上侧及下侧部份。 第C圖所示，在通過孔8之内側壁上之預定部份中形成 ^固金屬纟泉，即可在絕緣電路膜3之上侧及下侧表面上之 目咏點(like terminals)之間形成一個信號傳輸路徑。 絕緣電路膜3形成之厚度约為1 mil (大約等於24 μ m)。而金屬線3b可由銅、鎳、金；銅、鎳、鉻、金；銅、鍊 餘金，或是電阻係數大於1〇-8Ω/αη之金屬材料。内侧 導、、泉3c及外侧導線3d自金屬線3b之表面突起一個固定之高 度。此哭起之高度在1—2 μ m之間，且其尺寸在5jimX 5_~~20〇4111\2〇〇4111之間。通過孔8在形成時之直徑约 為 10* — 200 (X m 〇 參考第6圖，導線框之構造如下，在侧向軌道（side rail)s内側之内側導線4係連接到絕膜3之外側導線3d，而 用來與一個印刷電路板相連接之外側導線7則與一個、、閉 合棒D〃相連接。在此種結構之中。在此結構之中，用來 支撐晶片襯墊之支撐棒及晶元襯墊，與習知之技藝相較， 並未出現，因此，使用這樣的結構，可以避免因為晶元襯 墊及支撐失效而造成之可靠度問題。除此之外，像這樣的 結構可以達成輕、薄、短、小之效果。 本發明在上面所説明之導線框之厚度至少為2mil，且 使用銅、MF202、Alloy42、〇rin194、Allay5〇或是其它 電阻值超過1(ΗΩ/αη之金屬。 ' 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） nn n^— n^i m · I —參-- (請先閱讀背面之注意事項再填寫本頁) A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（ 參考第2圖，連接到絕緣膜3之外側襯墊3d之内側引 線4之連接部份覆有一個預定之金屬，如銀、錫或是錮， 以增加接合力量。 在第4圖中所示之非等向性導體5含有液態或是固態之 樹脂’及含有導電顆粒。上述之樹脂則可使用環氧樹脂，或 是已轉換之環氧樹脂(transformed epoxy resin)、聚醋（p〇iy estor)或是已轉換之聚合物(transformed p〇iymer)、丙烯酸醋 (acryloster)或已轉換之酯（transformecj ester)、石夕樹脂（siHc〇n resin)、盼樹脂（phenoXy resin)、聚胺基甲酸乙醋 (polyurethane) '多硫化合物（p〇iySUifide)、氰基丙稀酸 (cyanoacrylate)、聚補體(polyalexin)，及其它可在受到熱及紫 外光輻射後或是置於室溫下可以硬化之聚合物。 上述用來導電之顆粒包含銀、鎳、銦、錫 '氧化銦錫 或是這些材料之合金，或是電阻係數大於1〇-8Ω/αη之金 屬。這些顆粒之大小在3/zm—15/zm之間較佳，而且這些 顆粒之形狀可為圓形、四邊形、三角形、六角形、方錐形 或是三角錐形。 參考第3A圊及第3B圖，多數在包裝主體6内部形成之 波紋6a會在包裝主體6之下側部份處形成，而且導線框之 外側導線7會置於包裝主體6之波紋6a之内。外側導線7之 末端部份最好由外側導線7末端處折疊一個預定之長度， 而且這個被折疊之部份會與包裝主體6之底部表面有相同之 位準。波紋6a位在包裝主體6之中，而且以鋸齒之形狀排 成兩行’而且相對應於此波紋6a之外側導線7亦會依相似 11 本纸疼疋及轉用中國國家嫜準（CNS ) A4規格（210X297公嫠） (請先ΪΚΙ讀背面之注意事續再填寫本頁) 訂 岐！ A7 _____B7 五、發明説明（） 之鋸齒形式而安置。此波紋6a之形狀為四方形或是正方形 ’而其尺寸則為4milX4mil — 4milX5mil，且其深度則為 24 μ m —400 μ m。 如第3B圖所示，位在一行上之波紋會興多一行之波紋 I 隔開-個間距，此間距最好為lmi卜5咖，而且為織形 式。為了維持這樣的間距，内侧導線要折成—個預定之角 度，此折疊角度最好為-1〇。至+ 1〇。。 在下文中我們將說明依據本發明之多層底部導線包裝 之製造方法及其操作。 '' 首先，先用-般性之PWB(Printed WidngB〇ard)方法 ，製造絕緣電路板3。接$，在基底膜〜之上侧及下侧部 份經由將預定之金屬層加以沈積、電鑛及佈形，可以 金屬線3b及襯墊，其中此基底膜3a具有多數之通過孔8， 然後通過孔之壁面表面之預定部份再覆上或是電鑛上金屬 ，因此可以軸有錄触及通過孔之_電路膜3。 依照上述方式所形成之絕緣電路膜3再摻雜上非等向 導體5，而導線框之内侧導線4會連接到絕緣電路膜° 侧襯墊之上。接著，使用面向下之方式，將一個第一半 體晶片1接合到絕緣電路膜3之一個侧面之上，其中触 晶片之接合健會與絕緣電路膜3之内籠墊排成—線 接著，再用一加溫爐熟化帅打11^〇以1^1^)、—紫外 熟化㈤的Vi〇let C紙）、或是—個熱壓縮（then^ C〇mpreSSi〇n)之方法，來進行一個硬化步騾。在接合第^ 半導體晶片1之後，絕緣電路膜3之另一侧邊夸摻有非等 (請先閲讀背面之注意事項再填寫本頁) -裝- .I I · A7 B7 五、發明説明（ 導。其次，再使用上述之熟化（euHngGperati。狀— ，使一個第二半導體晶片2接合於其上。 — 政-- C請先閲讀背面之注意事项再填寫本頁} 導完上述之步驟之後，可以進行—個—般性之半 製程：換言之，依序進行塑模、修整/形成、測 =：/驟。在塑膜之步驟時，外侧導線塑模區域之接線形 二係使用_狀之形式，並且形成有預定深度之波紋，以 裂作相對應於焊結部份之導線框之外侧導線。此焊結部份 f形成外侧導線7之時，會在塑膜主體中形成。在修整步 知之時，可去除支撐棒D及侧面軌道s，只留下外侧導線7 及内侧導線4。在形成步驟之時，在焊接部份之外侧導線 之末端可折疊，且折疊過之末端可進入波紋之内，因此可 與包裝主體6底部表面保持一個相同之位準。 依據上述之步驟，可製作出如第1圖及第2圖所示之 多層底部導線包裝。接著，依照平常之方式，此已製好之 包衣可將露出之導線焊在基材之上，而可安置，並且可以 進行信號輸入/輸出工作。 經濟部中央標準局員工消費合作社印製 如上面所作之説明，在依據本發明之多層底部導線包 裝之中，具有一預定金屬圖案及連接襯墊之絕緣電路膜可 用來支撐晶片1及2，及可作為一個電氣連接，其中晶片可 直接地附在其上側及下侧表面。因此，可以使用傳統之製 造過程，而不需大幅度之變更，益且可以在包裝上裝上兩 個或是多個晶片，因此可以增加包裝容量。再者，利用此 絕緣電路膜及非等向性導體，可提供高容量七輕薄之包裝 13 本纸诙尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） A7 B7 五、發明説明（ 除此之外，在依據本發明之多層底部導線包裳之中， 垃=需要使用導_之晶元餘及用來連接晶減墊之連 門^因!^可以有效地防止聽會由連接棒及包裝主體 i驟時,：:ί=來。此外备本發明亦可避免在塑膜 引apertlde)會由塑膜化合物中產生而 塑模步驟係將晶片用面朝下之方式接合時 所產生），因此可以增加可靠度。 呼 符八於絕緣電路膜之自由設計，因此，本發明可 付&使用者在接腳組態上之要求。 對此技藝熟知者應知，在本 部導線包裝之中，可以作_“所乂供之—種多層底 明之精神與·，目此本 ^錢化科悸離本發 之申請專利範圍來加以界定 \ ❾正及變化係由附加 濟 部 中 央 楯 準 局 員 X 消 f 合 作 社 印 製 14 本.祕尺度·巾關(Fig. 6 is a plan view illustrating the guides used in the packaging according to the present invention; and Fig. U is a plan view illustrating the state of the packaging according to the present invention after the plastic film. < Detailed description of preferred specific examples > J will be described with reference to accompanying drawings to illustrate preferred specific examples of the present invention. Figures 2, 3A, and 3B of the rural examination. The semiconductor wafer is bonded to the upper and lower sides of the insulating circuit film 3 with the metal wire pattern (rhyme 311— _ Service), with the half-faced I heart palpitation part, the position where the bonding pad electrode is set, the inner side of the frame J: film, and the direction is set. Insulated circuit film 3 is also connected to the wire gas signal that can be transmitted between 1 and 2, and the external conductor, forming electricity --------- • installation ----- (Please read the precautions on the back first Fill out this page again) ^ Correct 丨! A7-"i.vi ------- V. Description of the invention () An employee of the Central Government Bureau of the Ministry of Economic Affairs of the Consumer Cooperative printed an anisotropic conductor 5 containing resin and conductive particles' this The anisotropic conductor 5 can fill the connecting portion between the semiconductor wafer} and 2 and the insulating circuit film 3, and can fill the connecting portion between the insulating circuit film 3 and the inner conductor 4 of the lead frame. The above components are used for electrical connection. A predetermined area is wrapped with a molding compound to form a packaging body 6. The predetermined area includes the semiconductor wafers 1 and 2, the insulating circuit film 3, and the inner conductor 4 A dimple 6a with a predetermined size is formed on the lower part of the packaging body 6. This 6a has two columns to correspond to the array of pad electrodes, and the leads 7 on the outer side of the lead frame are respectively positioned. Within the corrugations 6a. The end portions of the outer wires 7 are folded outward from the central portion of the packaging body, and the outer wires on different rows are folded in opposite directions. The folded ends of these outer wires are The part that is electrically connected to an external component. Now we will explain the structure of the insulating circuit film 3 used in the above package in conjunction with Figures 4 and 5A-5C. Referring to Figures 4 and 5A-5B, This insulating road film 3 has a base film 3a composed of a polymer and a metal wire 3b, and the metal wires 3b are formed on the upper and lower portions of the base film 3a, respectively. As shown in FIG. 5B, the metal wire 3b A majority of the inner leads 3C and a majority of the outer leads 3d are formed thereon, among which the 'most of the inner leads 3c will be connected to the bonding pad ia & lb, and the majority of the outer leads 3d will be connected to the inner side in FIG. 4. Leads 4 to form an electrical connection between the semiconductor wafers 1 and 2 and the leads 4 inside the lead frame. In addition, a pass is established on the insulating circuit film 3 (please read the precautions on the back first) (Fill in this page again), νδ i Benjiu-, so the standard 4 uses the Chinese national standard (CNS) A4 husband ?. (21〇:? 97 public incineration) 5. Description of the invention (A7 B7 Central Bureau of Standards, Ministry of Economic Affairs Consumer Supervisor Cooperative Print PaU connected to semiconductor wafers 1 and 2 The same end point (that is, CAS, RAS, and RAS connected to RAS), you can form a terminal 黠 # These two pieces will be joined to the upper and lower parts of the insulation circuit No. 3. As shown in the figure, a solid metal spring is formed in a predetermined portion on the inner side wall of the through hole 8, which can be formed between like terminals on the upper and lower surfaces of the insulating circuit film 3. A signal transmission path. The thickness of the insulating circuit film 3 is about 1 mil (approximately equal to 24 μm). The metal wire 3b can be made of copper, nickel, gold; copper, nickel, chromium, gold; copper, chain gold, or It is a metal material with a resistivity greater than 10-8Ω / αη. The inner conductor 3c and the outer conductor 3d protrude from the surface of the metal wire 3b by a fixed height. The height of this cry is between 1-2 μm, and its size is between 5jimX 5_ ~~ 20〇4111 \ 2〇〇4111. The diameter of the through hole 8 at the time of formation is about 10 * -200 (X m 〇 refer to FIG. 6. The structure of the lead frame is as follows. The inner wire 4 inside the side rails is connected to the insulation film 3. The outer conductor 3d is used to connect to a printed circuit board. The outer conductor 7 is connected to a closed rod D〃. In this structure. In this structure, it is used to support the wafer pad. The support rods and wafer pads have not appeared compared with the known technology, so using this structure can avoid the reliability problems caused by wafer pads and support failures. In addition, like this The structure can achieve light, thin, short, and small effects. The thickness of the lead frame described above in the present invention is at least 2mil, and copper, MF202, Alloy42, Orin194, Allay50 or other resistance values exceeding 1 ( ΗΩ / αη metal. 'This paper size applies Chinese National Standard (CNS) A4 (210X297mm) nn n ^ — n ^ im · I —Refer to-(Please read the precautions on the back before filling this page) A7 B7 Staff Consumption of Central Bureau of Standards, Ministry of Economic Affairs Printed by Zakusho 5. Description of the invention (refer to Figure 2, the connection part of the inner lead 4 connected to the outer pad 3d of the insulating film 3 is covered with a predetermined metal such as silver, tin or rhenium to increase the bonding Strength. The anisotropic conductor 5 shown in Figure 4 contains liquid or solid resin 'and contains conductive particles. The above resin can be epoxy resin or transformed epoxy resin (transformed epoxy) resin), polyacetic acid ester or transformed polymer, transformed acrylic acid or transformedecj ester, siHcOn resin, PhenoXy resin, polyurethane 'polysulfide (poly Suifide), cyanoacrylate, polyalexin, and others can be exposed to heat and ultraviolet light Polymers that can harden after exposure to radiation or at room temperature. The particles used for electrical conduction above include silver, nickel, indium, tin, indium tin oxide or alloys of these materials, or resistivity greater than 10-8Ω / αη 的 金属。 These particles are It is better to be between 3 / zm and 15 / zm, and the shape of these particles can be circular, quadrangular, triangular, hexagonal, square or triangular. Refer to Figures 3A 圊 and 3B, most A corrugation 6 a formed inside the packaging body 6 is formed at a lower portion of the packaging body 6, and a lead 7 outside the lead frame is placed inside the corrugation 6 a of the packaging body 6. The end portion of the outer wire 7 is preferably folded by a predetermined length from the end of the outer wire 7, and the folded portion will have the same level as the bottom surface of the package body 6. The corrugation 6a is located in the packaging body 6, and is arranged in two rows in a zigzag shape. Moreover, the outer wires 7 corresponding to this corrugation 6a will also be similar to the 11 paper and converted to China National Standards (CNS) A4 size (210X297) 嫠 (Please read the notes on the back first and then fill out this page) A7 _____B7 Fifth, the invention description () is arranged in a zigzag form. The shape of the corrugation 6a is a square or a square, and its size is 4milX4mil—4milX5mil, and its depth is 24 μm—400 μm. As shown in Fig. 3B, the ripples on one line will be separated by a distance of one line. The distance is preferably 1mi, 5cm, and is woven. In order to maintain such a distance, the inner wire is folded into a predetermined angle, and the folding angle is preferably -10. To +10. . In the following, we will explain the manufacturing method and operation of the multilayer bottom wire package according to the present invention. '' First, an insulated circuit board 3 is manufactured using the general-purpose PWB (Printed Widng Boward) method. After $, the metal film 3b and the pad can be formed on the upper and lower sides of the base film by depositing a predetermined metal layer, electric ore and cloth shape. The base film 3a has a large number of through holes 8, Then pass through a predetermined part of the wall surface of the hole or cover the metal with electricity, so you can touch the circuit film 3 through the hole. The insulating circuit film 3 formed in the above manner is further doped with the anisotropic conductor 5, and the inner wire 4 of the lead frame is connected to the insulating circuit film-side pad. Next, a first-half wafer 1 is bonded onto one side of the insulating circuit film 3 using a downward-facing method, wherein the bonding contact of the wafer and the inner cage pad of the insulating circuit film 3 are aligned in a line. Then use a heating furnace to cure 11 ^ 〇 to 1 ^ 1 ^),-UV curing of Violet C paper), or a method of thermal compression (then ^ C〇mpreSSi〇n), to Perform a hardening step. After joining the ^ th semiconductor wafer 1, the other side of the insulating circuit film 3 is doped with inequalities (please read the precautions on the back before filling out this page) -Installation-.II · A7 B7 V. Description of the invention (Guide . Secondly, use the above-mentioned maturation (euHngGperati.) — To make a second semiconductor wafer 2 bonded to it. — Government-C Please read the precautions on the back before filling this page} After completing the above steps, You can perform a half-general process: in other words, sequentially perform molding, trimming / forming, and measuring =: / step. In the step of plastic film, the wiring shape of the outer wire molding area is used in the second form. It has a corrugation of a predetermined depth and is formed into a wire corresponding to the outer side of the lead frame corresponding to the bonding portion. When the bonding portion f forms the outer conductor 7, it is formed in the plastic film body. When the steps are known, the support rod D and the side rails s can be removed, leaving only the outer wires 7 and the inner wires 4. At the formation step, the ends of the outer wires at the soldering portion can be folded, and the folded ends can enter Within the ripple, so can The bottom surface of the packaging body 6 maintains the same level. According to the above steps, a multilayer bottom wire package as shown in Figures 1 and 2 can be produced. Then, according to the usual way, this prepared coating The exposed wires can be soldered on the base material, can be placed, and can perform signal input / output. The Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs printed as described above in the multilayer bottom wire packaging according to the present invention. Among them, an insulating circuit film having a predetermined metal pattern and a connection pad can be used to support the wafers 1 and 2, and can be used as an electrical connection in which the wafer can be directly attached to the upper and lower surfaces thereof. Therefore, the conventional can be used The manufacturing process does not need to be greatly changed, and it is possible to mount two or more wafers on the package, so the packaging capacity can be increased. Furthermore, using this insulating circuit film and anisotropic conductor, Provide high-capacity seven light and thin packaging 13 This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X 297 mm) A7 B7 V. Description of invention (except In addition, in the multi-layer bottom wire package according to the present invention, it is necessary to use a conductive wafer and a connecting door for connecting a crystal reduction pad ^ because! ^ Can effectively prevent the hearing by the connecting rod and The main body of the package is: ί = 来. In addition, the present invention can also avoid apertlde) from the plastic film compound, and the molding step is generated when the wafers are bonded face down. Therefore, the reliability can be increased. The free design of the insulation symbol on the insulating circuit film, therefore, the present invention can meet the user's requirements for pin configuration. Those skilled in the art should know that In the text, you can make _ "the confession provided-a kind of multi-layered ideological spirit and ·, so this article ^ Qianhua Branch is defined from the scope of the patent application issued by this issue \ \ Zheng Zheng and changes are approved by the Ministry of Economic Affairs Bureau member X Xiaof Cooperative printed 14 books.