TW373261B - Method of processing gate electrode etching integrated circuit - Google Patents

Method of processing gate electrode etching integrated circuit

Info

Publication number
TW373261B
TW373261B TW087101490A TW87101490A TW373261B TW 373261 B TW373261 B TW 373261B TW 087101490 A TW087101490 A TW 087101490A TW 87101490 A TW87101490 A TW 87101490A TW 373261 B TW373261 B TW 373261B
Authority
TW
Taiwan
Prior art keywords
oxygen
etching
reactive gas
chlorine
gate electrode
Prior art date
Application number
TW087101490A
Other languages
Chinese (zh)
Inventor
Hong-Yuan Tao
jia-xiong Cai
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW087101490A priority Critical patent/TW373261B/en
Application granted granted Critical
Publication of TW373261B publication Critical patent/TW373261B/en

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

A kind of method of processing gate electrode etching integrated circuit: etching process is classified as the three steps continually as follows: etching bottom part an-reflection layer and hard protection cover, to remove light block and bottom anti-reflective layer, and etch silicon thin film. Wherein etch bottom part anti-reflective layer is with one group of oxygen/hydrogen bromide, or oxygen/nitrogen, or oxygen/chlorine, or oxygen/carbon tetrafluoride, or oxygen/bicarbon hexafluoride as reactive gas, etch hard protection cover is by using one group of chlorine, or carbon tetrafluoride, or bicarbon hexafluoride as reactive gas; to remove light block and bottom anti-reflective layer is by oxygen as reactive gas; etching silicon thin film reactive gas as chlorine bromide and hydrogen bromide. The three etching steps are to be processed within the same etching mouth.
TW087101490A 1998-02-05 1998-02-05 Method of processing gate electrode etching integrated circuit TW373261B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW087101490A TW373261B (en) 1998-02-05 1998-02-05 Method of processing gate electrode etching integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087101490A TW373261B (en) 1998-02-05 1998-02-05 Method of processing gate electrode etching integrated circuit

Publications (1)

Publication Number Publication Date
TW373261B true TW373261B (en) 1999-11-01

Family

ID=57941699

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087101490A TW373261B (en) 1998-02-05 1998-02-05 Method of processing gate electrode etching integrated circuit

Country Status (1)

Country Link
TW (1) TW373261B (en)

Similar Documents

Publication Publication Date Title
EP1284305A3 (en) Copper film vapor phase deposition method and apparatus
ATE27186T1 (en) PROCESSES FOR THE PRODUCTION OF AMORPHOUS SEMICONDUCTING ALLOYS AND ARRANGEMENTS BY MICROWAVE ENERGY.
ATE331298T1 (en) IMPROVED METHOD OF ETCHING AN OXIDE LAYER
WO2004008827A3 (en) Atomic layer deposition of high k dielectric films
EP0376252A3 (en) Method of removing an oxide film on a substrate
EP1077476A3 (en) Oxygen free plasma stripping process
AU2001247537A1 (en) Method for improving uniformity and reducing etch rate variation of etching polysilicon
TW255049B (en) Anisotropic polysilicon plasma etching
EP1229574A3 (en) Silicon-based film, formation method therefor and photovoltaic element
WO2003030238A1 (en) Processing method
MY122888A (en) Carbon doped oxide deposition
WO2001096955A3 (en) A method and apparatus for etching metal layers on substrates
TW363220B (en) Etching organic antireflective coating from a substrate
TW373261B (en) Method of processing gate electrode etching integrated circuit
WO2001009929A3 (en) Method for etch rate enhancement by background oxygen control in a soft etch system
TW350099B (en) IC microfilm process
EP0066042A3 (en) Methods of processing a silicon substrate for the formation of an integrated circuit therein
PT1169492E (en) PROCESS OF PRODUCTION OF FINE COATINGS AND DIFFICULT DISSOLUTION
EP1039519A3 (en) Method and apparatus for forming a porous SiO2 interlayer insulating film
WO2001078117A3 (en) Gaseous process for surface preparation
EP0978883A1 (en) Method of producing solar cell device
JPS5717179A (en) Manufacture of semiconductor device for generating photoelectromotive force
TW357437B (en) Manufacturing process for compound semiconductor cells
CN1967773B (en) Etching method of ditch road device
TW344118B (en) Etch process for single crystal silicon

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent