TW373261B - Method of processing gate electrode etching integrated circuit - Google Patents
Method of processing gate electrode etching integrated circuitInfo
- Publication number
- TW373261B TW373261B TW087101490A TW87101490A TW373261B TW 373261 B TW373261 B TW 373261B TW 087101490 A TW087101490 A TW 087101490A TW 87101490 A TW87101490 A TW 87101490A TW 373261 B TW373261 B TW 373261B
- Authority
- TW
- Taiwan
- Prior art keywords
- oxygen
- etching
- reactive gas
- chlorine
- gate electrode
- Prior art date
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
A kind of method of processing gate electrode etching integrated circuit: etching process is classified as the three steps continually as follows: etching bottom part an-reflection layer and hard protection cover, to remove light block and bottom anti-reflective layer, and etch silicon thin film. Wherein etch bottom part anti-reflective layer is with one group of oxygen/hydrogen bromide, or oxygen/nitrogen, or oxygen/chlorine, or oxygen/carbon tetrafluoride, or oxygen/bicarbon hexafluoride as reactive gas, etch hard protection cover is by using one group of chlorine, or carbon tetrafluoride, or bicarbon hexafluoride as reactive gas; to remove light block and bottom anti-reflective layer is by oxygen as reactive gas; etching silicon thin film reactive gas as chlorine bromide and hydrogen bromide. The three etching steps are to be processed within the same etching mouth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087101490A TW373261B (en) | 1998-02-05 | 1998-02-05 | Method of processing gate electrode etching integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087101490A TW373261B (en) | 1998-02-05 | 1998-02-05 | Method of processing gate electrode etching integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW373261B true TW373261B (en) | 1999-11-01 |
Family
ID=57941699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087101490A TW373261B (en) | 1998-02-05 | 1998-02-05 | Method of processing gate electrode etching integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW373261B (en) |
-
1998
- 1998-02-05 TW TW087101490A patent/TW373261B/en not_active IP Right Cessation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |