TW370724B - Method for manufacturing dynamic random access memory and metal connects - Google Patents
Method for manufacturing dynamic random access memory and metal connectsInfo
- Publication number
- TW370724B TW370724B TW087108819A TW87108819A TW370724B TW 370724 B TW370724 B TW 370724B TW 087108819 A TW087108819 A TW 087108819A TW 87108819 A TW87108819 A TW 87108819A TW 370724 B TW370724 B TW 370724B
- Authority
- TW
- Taiwan
- Prior art keywords
- random access
- access memory
- dynamic random
- metal
- opening
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
Abstract
The method of the present invention for manufacturing dynamic random access memory (DRAM) and metal connects includes using a capacitor structure of metal-insulator-metal (MIM), and producing a conductive plug of the peripheral region with two stages, so as to reduce the aspect ratio of the opening of the contact hole/via hole in the peripheral circuit, and allowing the use of conductive material having low resistance to fill in the opening of the storage node contact hole in the cell area and the opening of the contact hole/via hole in the peripheral region without considering whether the step coverage capacity of the conductive material is good enough.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4186898A | 1998-03-12 | 1998-03-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW370724B true TW370724B (en) | 1999-09-21 |
Family
ID=21918778
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087108819A TW370724B (en) | 1998-03-12 | 1998-06-04 | Method for manufacturing dynamic random access memory and metal connects |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN1159758C (en) |
TW (1) | TW370724B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100420001C (en) * | 2005-05-27 | 2008-09-17 | 中芯国际集成电路制造(上海)有限公司 | Method for improving CMP process window of deep slot DRAM tungsten metal bit line |
KR100815188B1 (en) | 2006-06-29 | 2008-03-19 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device and method for manufacturing nand type flash memory device using the same |
US9029260B2 (en) * | 2011-06-16 | 2015-05-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gap filling method for dual damascene process |
TWI579849B (en) * | 2015-07-15 | 2017-04-21 | 華邦電子股份有限公司 | Memory device and method of manufacturing the same |
-
1998
- 1998-06-04 TW TW087108819A patent/TW370724B/en not_active IP Right Cessation
- 1998-06-24 CN CNB981152201A patent/CN1159758C/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1229272A (en) | 1999-09-22 |
CN1159758C (en) | 2004-07-28 |
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Legal Events
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MK4A | Expiration of patent term of an invention patent |