TW370724B - Method for manufacturing dynamic random access memory and metal connects - Google Patents

Method for manufacturing dynamic random access memory and metal connects

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Publication number
TW370724B
TW370724B TW087108819A TW87108819A TW370724B TW 370724 B TW370724 B TW 370724B TW 087108819 A TW087108819 A TW 087108819A TW 87108819 A TW87108819 A TW 87108819A TW 370724 B TW370724 B TW 370724B
Authority
TW
Taiwan
Prior art keywords
random access
access memory
dynamic random
metal
opening
Prior art date
Application number
TW087108819A
Other languages
Chinese (zh)
Inventor
Yeur-Luen Tu
Ji-Jin Luo
Ko-Hsing Chang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Application granted granted Critical
Publication of TW370724B publication Critical patent/TW370724B/en

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Abstract

The method of the present invention for manufacturing dynamic random access memory (DRAM) and metal connects includes using a capacitor structure of metal-insulator-metal (MIM), and producing a conductive plug of the peripheral region with two stages, so as to reduce the aspect ratio of the opening of the contact hole/via hole in the peripheral circuit, and allowing the use of conductive material having low resistance to fill in the opening of the storage node contact hole in the cell area and the opening of the contact hole/via hole in the peripheral region without considering whether the step coverage capacity of the conductive material is good enough.
TW087108819A 1998-03-12 1998-06-04 Method for manufacturing dynamic random access memory and metal connects TW370724B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4186898A 1998-03-12 1998-03-12

Publications (1)

Publication Number Publication Date
TW370724B true TW370724B (en) 1999-09-21

Family

ID=21918778

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087108819A TW370724B (en) 1998-03-12 1998-06-04 Method for manufacturing dynamic random access memory and metal connects

Country Status (2)

Country Link
CN (1) CN1159758C (en)
TW (1) TW370724B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100420001C (en) * 2005-05-27 2008-09-17 中芯国际集成电路制造(上海)有限公司 Method for improving CMP process window of deep slot DRAM tungsten metal bit line
KR100815188B1 (en) 2006-06-29 2008-03-19 주식회사 하이닉스반도체 Method for manufacturing semiconductor device and method for manufacturing nand type flash memory device using the same
US9029260B2 (en) * 2011-06-16 2015-05-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling method for dual damascene process
TWI579849B (en) * 2015-07-15 2017-04-21 華邦電子股份有限公司 Memory device and method of manufacturing the same

Also Published As

Publication number Publication date
CN1229272A (en) 1999-09-22
CN1159758C (en) 2004-07-28

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