TW368736B - Manufacturing method for multiple surface short insulated gate bipolar transistor - Google Patents

Abstract

A kind of manufacturing method for multiple surface short insulated gate bipolar transistor which is to form an epitaxy silicon layer on the surface of substrate; then, forming a first oxide on the epitaxy silicon layer and employing photolithography and etching to define a plurality of P-well predetermined region; then, proceeding ion implantation and forming a plurality of P-well in a plurality of P-well predetermined region; then, forming a second oxide on the chip and defining the active region by photolithography and etching; sequentially depositing a gate oxide and a polycide on the surface of active region and defining polycide layer by the photolithography and etching and forming the gate of transistor component; proceeding ion implantation to form a channel region; proceeding ion implantation to form a plurality of buried emitter lines in the channel region; coating a photoresistant on the chip and employing photolithography for defining a plurality of spaced implantation contact; employing the photoresistant as the mask for ion implantation to form the N+/P+ crossed diffusion region, and removing the photoresistant; then, depositing a third oxide on the chip and employing photolithography and etching to define the third oxide and form a plurality of contacts; lastly, depositing a metal aluminum layer on the front and back face of the chip and employing photolithography and etching to define the front metal aluminum layer and form the metal interconnect.