TW363226B - Heat treatment method for silicon wafer - Google Patents

Heat treatment method for silicon wafer

Info

Publication number
TW363226B
TW363226B TW084112414A TW84112414A TW363226B TW 363226 B TW363226 B TW 363226B TW 084112414 A TW084112414 A TW 084112414A TW 84112414 A TW84112414 A TW 84112414A TW 363226 B TW363226 B TW 363226B
Authority
TW
Taiwan
Prior art keywords
wafer
hydrogen
heat treatment
mechanical strength
oxygen concentration
Prior art date
Application number
TW084112414A
Other languages
Chinese (zh)
Inventor
Masahiko Yamamoto
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Application granted granted Critical
Publication of TW363226B publication Critical patent/TW363226B/en

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The wafer after hydrogen treatment will reduce its mechanical strength. The invention provides a heat treatment after the hydrogen treatment so as to increase the mechanical strength of wafer and maintain all the properties of hydrogen treatment and increase oxygen concentration around the surface of wafer. The hydrogen-treated wafer is heat treated under 1100 degree C for two hours while oxygen is guided around the surface of wafer. The oxygen concentration decreases gradually from the surface to the depth about 3 to 4 micrometer and beyond this point it increase again till it reaches the internal oxygen concentration. Dislocations are produced by pressing the wafer and increased by the heat treatment. The propagation of the dislocations are detected and it is approximately 1/10 of that in hydrogen-treated wafer. By the heat treatment method proposed here, the wafer can have the same regional mechanical strength as before the hydrogen processing.
TW084112414A 1994-06-03 1995-11-22 Heat treatment method for silicon wafer TW363226B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14563094A JP3458342B2 (en) 1994-06-03 1994-06-03 Silicon wafer manufacturing method and silicon wafer

Publications (1)

Publication Number Publication Date
TW363226B true TW363226B (en) 1999-07-01

Family

ID=15389455

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084112414A TW363226B (en) 1994-06-03 1995-11-22 Heat treatment method for silicon wafer

Country Status (2)

Country Link
JP (1) JP3458342B2 (en)
TW (1) TW363226B (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5994761A (en) * 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
DE69841714D1 (en) 1997-04-09 2010-07-22 Memc Electronic Materials Silicon with low defect density and ideal oxygen precipitation
US6828690B1 (en) 1998-08-05 2004-12-07 Memc Electronic Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices
DE69941196D1 (en) 1998-09-02 2009-09-10 Memc Electronic Materials Heat treated silicon wafers with improved self-termination
US6336968B1 (en) 1998-09-02 2002-01-08 Memc Electronic Materials, Inc. Non-oxygen precipitating czochralski silicon wafers
EP1114454A2 (en) 1998-09-02 2001-07-11 MEMC Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
WO2000013226A1 (en) 1998-09-02 2000-03-09 Memc Electronic Materials, Inc. Process for preparing an ideal oxygen precipitating silicon wafer
EP1125008B1 (en) 1998-10-14 2003-06-18 MEMC Electronic Materials, Inc. Thermally annealed, low defect density single crystal silicon
US6284384B1 (en) 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
US20030051656A1 (en) 1999-06-14 2003-03-20 Charles Chiun-Chieh Yang Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
US6339016B1 (en) 2000-06-30 2002-01-15 Memc Electronic Materials, Inc. Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
US6599815B1 (en) 2000-06-30 2003-07-29 Memc Electronic Materials, Inc. Method and apparatus for forming a silicon wafer with a denuded zone
US6897084B2 (en) 2001-04-11 2005-05-24 Memc Electronic Materials, Inc. Control of oxygen precipitate formation in high resistivity CZ silicon
KR100399946B1 (en) * 2001-06-30 2003-09-29 주식회사 하이닉스반도체 The method for annealing in flowable inter layer dielectrics
US6955718B2 (en) 2003-07-08 2005-10-18 Memc Electronic Materials, Inc. Process for preparing a stabilized ideal oxygen precipitating silicon wafer
KR100695004B1 (en) * 2005-11-01 2007-03-13 주식회사 하이닉스반도체 Method of forming an oxide film in a semiconductor device
US7485928B2 (en) 2005-11-09 2009-02-03 Memc Electronic Materials, Inc. Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering
WO2010016586A1 (en) 2008-08-08 2010-02-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Method for manufacturing semiconductor wafer

Also Published As

Publication number Publication date
JPH07335657A (en) 1995-12-22
JP3458342B2 (en) 2003-10-20

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