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Priority to TW086118311ApriorityCriticalpatent/TW362246B/en
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Publication of TW362246BpublicationCriticalpatent/TW362246B/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Abstract
The method is used to remove fluoride photoresist layer on the silicon permittivity layer. First is to form a metal contact layer on the substrate; then form a photo-resist layer on the metal contact layer; then employ the fluorine etching agent for reactive ion plasma etching to generate dielectric holes directly to the metal contact. Then, use the argon inclusive plasma for the first stripping to remove part of the fluoride layer and by the second stripping, the residual layer of metal polymer can be removed from the side wall of dielectric holes.
TW086118311A1997-12-051997-12-05Method of removing fluoride photoresist layer on semiconductor substrate
TW362246B
(en)