TW360983B - Method for growing gallium nitride and its buffer layer structure - Google Patents

Method for growing gallium nitride and its buffer layer structure

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Publication number
TW360983B
TW360983B TW086103518A TW86103518A TW360983B TW 360983 B TW360983 B TW 360983B TW 086103518 A TW086103518 A TW 086103518A TW 86103518 A TW86103518 A TW 86103518A TW 360983 B TW360983 B TW 360983B
Authority
TW
Taiwan
Prior art keywords
gallium nitride
growing
buffer layer
layer
layer structure
Prior art date
Application number
TW086103518A
Other languages
English (en)
Inventor
Guang-Guo Shi
Jau-Nian Huang
Jin-Yuan Chen
Bing-Jie Li
Ming-Huang Hung
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW086103518A priority Critical patent/TW360983B/zh
Application granted granted Critical
Publication of TW360983B publication Critical patent/TW360983B/zh

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TW086103518A 1997-03-20 1997-03-20 Method for growing gallium nitride and its buffer layer structure TW360983B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086103518A TW360983B (en) 1997-03-20 1997-03-20 Method for growing gallium nitride and its buffer layer structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086103518A TW360983B (en) 1997-03-20 1997-03-20 Method for growing gallium nitride and its buffer layer structure

Publications (1)

Publication Number Publication Date
TW360983B true TW360983B (en) 1999-06-11

Family

ID=57940738

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086103518A TW360983B (en) 1997-03-20 1997-03-20 Method for growing gallium nitride and its buffer layer structure

Country Status (1)

Country Link
TW (1) TW360983B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112820768A (zh) * 2019-09-20 2021-05-18 深圳市晶相技术有限公司 一种半导体外延结构及其应用与制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112820768A (zh) * 2019-09-20 2021-05-18 深圳市晶相技术有限公司 一种半导体外延结构及其应用与制造方法

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