TW357361B - High-voltage level shifting CMOS buffer - Google Patents

High-voltage level shifting CMOS buffer

Info

Publication number
TW357361B
TW357361B TW086114170A TW86114170A TW357361B TW 357361 B TW357361 B TW 357361B TW 086114170 A TW086114170 A TW 086114170A TW 86114170 A TW86114170 A TW 86114170A TW 357361 B TW357361 B TW 357361B
Authority
TW
Taiwan
Prior art keywords
buffer
voltage level
voltage
level shifting
operation voltage
Prior art date
Application number
TW086114170A
Other languages
English (en)
Inventor
Richard L Hull
Randy L Yach
Original Assignee
Microchip Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microchip Tech Inc filed Critical Microchip Tech Inc
Application granted granted Critical
Publication of TW357361B publication Critical patent/TW357361B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Read Only Memory (AREA)
  • Logic Circuits (AREA)
TW086114170A 1996-10-01 1997-09-30 High-voltage level shifting CMOS buffer TW357361B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72392596A 1996-10-01 1996-10-01

Publications (1)

Publication Number Publication Date
TW357361B true TW357361B (en) 1999-05-01

Family

ID=24908277

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086114170A TW357361B (en) 1996-10-01 1997-09-30 High-voltage level shifting CMOS buffer

Country Status (5)

Country Link
EP (1) EP0864203A4 (zh)
JP (1) JPH11500896A (zh)
KR (1) KR19990071743A (zh)
TW (1) TW357361B (zh)
WO (1) WO1998015060A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144603A (ja) 1999-11-18 2001-05-25 Oki Micro Design Co Ltd レベルシフタ回路およびそれを含むデータ出力回路
KR100585168B1 (ko) * 2004-12-22 2006-06-02 삼성전자주식회사 다중경로 입력버퍼회로
US20090243841A1 (en) * 2006-06-02 2009-10-01 Koninklijke Philips Electronics N. V. Cognitive monitoring wireless device for healthcare equipment
JP5110247B2 (ja) 2006-07-31 2012-12-26 ミツミ電機株式会社 半導体集積回路装置
US10263621B2 (en) 2017-03-24 2019-04-16 Taiwan Semiconductor Manufacturing Company Limited Level shifter with improved voltage difference

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845381A (en) * 1987-10-01 1989-07-04 Vlsi Technology, Inc. Voltage level shifting circuit
DE3934303C2 (de) * 1988-10-15 2001-01-25 Sony Corp Adreßdecoder für nichtflüchtige Speicher
US4978870A (en) * 1989-07-19 1990-12-18 Industrial Technology Research Institute CMOS digital level shifter circuit
US5157280A (en) * 1991-02-13 1992-10-20 Texas Instruments Incorporated Switch for selectively coupling a power supply to a power bus
US5243236A (en) * 1991-12-31 1993-09-07 Intel Corporation High voltage CMOS switch with protection against diffusion to well reverse junction breakdown
US5175512A (en) * 1992-02-28 1992-12-29 Avasem Corporation High speed, power supply independent CMOS voltage controlled ring oscillator with level shifting circuit
JP3144166B2 (ja) * 1992-11-25 2001-03-12 ソニー株式会社 低振幅入力レベル変換回路
JPH0774616A (ja) * 1993-07-06 1995-03-17 Seiko Epson Corp 信号電圧レベル変換回路及び出力バッファ回路
US5510748A (en) * 1994-01-18 1996-04-23 Vivid Semiconductor, Inc. Integrated circuit having different power supplies for increased output voltage range while retaining small device geometries
JP3204848B2 (ja) * 1994-08-09 2001-09-04 株式会社東芝 レベル変換回路及びこのレベル変換回路を用いてレベル変換されたデータを出力する方法
US5455526A (en) * 1994-08-10 1995-10-03 Cirrus Logic, Inc. Digital voltage shifters and systems using the same

Also Published As

Publication number Publication date
EP0864203A4 (en) 2001-02-07
WO1998015060A1 (en) 1998-04-09
KR19990071743A (ko) 1999-09-27
EP0864203A1 (en) 1998-09-16
JPH11500896A (ja) 1999-01-19

Similar Documents

Publication Publication Date Title
TW338135B (en) Travel programming device (2)
TW357483B (en) Power device and voltage converter as well as the semiconductor circuit
EP0660517A3 (en) Voltage controlled oscillator with symmetrical output and logic gate intended to be used there.
EP0611161A3 (en) Soft wakeup output buffer.
TW324799B (en) MOS termination for low power signaling
CA2196345A1 (en) Cord with high non-structural elongation
ES2176482T3 (es) Conmutacion entre señales de velocidad de bits reducida.
EP0605752A3 (en) Switching power supply.
JPS6454819A (en) Cmos digital-analog converter circuit
MY124616A (en) Method and apparatus for preventing power amplifier saturation
TW330294B (en) Built-in self test of memory embedded in a logic circuit
DE68921342D1 (de) Versorgungsleitungsanordnung und -vorrichtung für ultrareines wasser.
TW359050B (en) Analog switch
TW357361B (en) High-voltage level shifting CMOS buffer
TW336321B (en) Fuse-refresh-circuit for semiconductor memory-arrangement
CA2096627A1 (en) Reference voltage generator for dynamic random access memory
JPS6468005A (en) Mosfet incorporating protection function
HK1046999A1 (en) Programmable buffer circuit
ZA989827B (en) Interface for a lamp operating unit
TW359028B (en) Level shifter irrespective of variation of threshold voltage
JPS53135249A (en) Logic circuit system for integration
MY116647A (en) Automatic drawing device
IT1261884B (it) Unita' a vite per l'uso in elementi per implantologia ossea
TW357487B (en) Drive circuit for a fieldeffect controlled power semiconductor component
JPS56154865A (en) Rewriting device for subscriber service data