TW355834B - Method to produce a semiconductor device - Google Patents
Method to produce a semiconductor deviceInfo
- Publication number
- TW355834B TW355834B TW086113013A TW86113013A TW355834B TW 355834 B TW355834 B TW 355834B TW 086113013 A TW086113013 A TW 086113013A TW 86113013 A TW86113013 A TW 86113013A TW 355834 B TW355834 B TW 355834B
- Authority
- TW
- Taiwan
- Prior art keywords
- plug
- produce
- semiconductor device
- electrode
- condensator
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1996140448 DE19640448C1 (de) | 1996-09-30 | 1996-09-30 | Verfahren zum Herstellen einer Halbleiteranordnung mit einem Kondensator |
Publications (1)
Publication Number | Publication Date |
---|---|
TW355834B true TW355834B (en) | 1999-04-11 |
Family
ID=7807542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086113013A TW355834B (en) | 1996-09-30 | 1997-09-09 | Method to produce a semiconductor device |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE19640448C1 (zh) |
TW (1) | TW355834B (zh) |
WO (1) | WO1998014992A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19842704C2 (de) * | 1998-09-17 | 2002-03-28 | Infineon Technologies Ag | Herstellverfahren für einen Kondensator mit einem Hoch-epsilon-Dielektrikum oder einem Ferroelektrikum nach dem Fin-Stack-Prinzip unter Einsatz einer Negativform |
DE19842684C1 (de) * | 1998-09-17 | 1999-11-04 | Siemens Ag | Auf einem Stützgerüst angeordneter Kondensator in einer Halbleiteranordnung und Herstellverfahren |
DE19929723B4 (de) * | 1999-06-29 | 2004-05-06 | Infineon Technologies Ag | Verfahren zur Herstellung einer Elektrode |
DE10053170C2 (de) | 2000-10-26 | 2002-09-26 | Infineon Technologies Ag | Speicherkondensator und zugehörige Kontaktierungsstruktur sowie Verfahren zu deren Herstellung |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5382817A (en) * | 1992-02-20 | 1995-01-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having a ferroelectric capacitor with a planarized lower electrode |
JP2550852B2 (ja) * | 1993-04-12 | 1996-11-06 | 日本電気株式会社 | 薄膜キャパシタの製造方法 |
JPH0714993A (ja) * | 1993-06-18 | 1995-01-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5504041A (en) * | 1994-08-01 | 1996-04-02 | Texas Instruments Incorporated | Conductive exotic-nitride barrier layer for high-dielectric-constant materials |
US5464786A (en) * | 1994-10-24 | 1995-11-07 | Micron Technology, Inc. | Method for forming a capacitor having recessed lateral reaction barrier layer edges |
-
1996
- 1996-09-30 DE DE1996140448 patent/DE19640448C1/de not_active Expired - Fee Related
-
1997
- 1997-09-09 TW TW086113013A patent/TW355834B/zh active
- 1997-09-18 WO PCT/DE1997/002119 patent/WO1998014992A1/de active Application Filing
Also Published As
Publication number | Publication date |
---|---|
DE19640448C1 (de) | 1998-02-19 |
WO1998014992A1 (de) | 1998-04-09 |
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