TW353234B - Decoding method of silicon controlled rectifiers (SCR) structure ROM array - Google Patents

Decoding method of silicon controlled rectifiers (SCR) structure ROM array

Info

Publication number
TW353234B
TW353234B TW086106329A TW86106329A TW353234B TW 353234 B TW353234 B TW 353234B TW 086106329 A TW086106329 A TW 086106329A TW 86106329 A TW86106329 A TW 86106329A TW 353234 B TW353234 B TW 353234B
Authority
TW
Taiwan
Prior art keywords
memory cells
transistor
coupled
scr
row
Prior art date
Application number
TW086106329A
Other languages
English (en)
Inventor
Rong-Mao Wen
Original Assignee
United Integrated Circuits Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Integrated Circuits Corp filed Critical United Integrated Circuits Corp
Priority to TW086106329A priority Critical patent/TW353234B/zh
Priority to US08/907,004 priority patent/US5781467A/en
Priority to JP23985297A priority patent/JP3818336B2/ja
Application granted granted Critical
Publication of TW353234B publication Critical patent/TW353234B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
TW086106329A 1997-05-13 1997-05-13 Decoding method of silicon controlled rectifiers (SCR) structure ROM array TW353234B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW086106329A TW353234B (en) 1997-05-13 1997-05-13 Decoding method of silicon controlled rectifiers (SCR) structure ROM array
US08/907,004 US5781467A (en) 1997-05-13 1997-08-06 Decoding method for ROM matrix having a silicon controlled rectifier structure
JP23985297A JP3818336B2 (ja) 1997-05-13 1997-09-04 Ｓｃｒ構造を有するｒｏｍマトリックスの復調方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086106329A TW353234B (en) 1997-05-13 1997-05-13 Decoding method of silicon controlled rectifiers (SCR) structure ROM array

Publications (1)

Publication Number Publication Date
TW353234B true TW353234B (en) 1999-02-21

Family

ID=21626606

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086106329A TW353234B (en) 1997-05-13 1997-05-13 Decoding method of silicon controlled rectifiers (SCR) structure ROM array

Country Status (3)

Country Link
US (1) US5781467A (zh)
JP (1) JP3818336B2 (zh)
TW (1) TW353234B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7499315B2 (en) * 2003-06-11 2009-03-03 Ovonyx, Inc. Programmable matrix array with chalcogenide material
TWI597724B (zh) * 2005-12-24 2017-09-01 奧佛尼克公司 具硫屬化物材料之可程式化矩陣陣列

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136097A (ja) * 1983-12-23 1985-07-19 Hitachi Ltd 連想メモリ装置

Also Published As

Publication number Publication date
JP3818336B2 (ja) 2006-09-06
JPH10320995A (ja) 1998-12-04
US5781467A (en) 1998-07-14

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees