TW352482B - Red semiconductor laser of low beam divergence - Google Patents
Red semiconductor laser of low beam divergenceInfo
- Publication number
- TW352482B TW352482B TW086111535A TW86111535A TW352482B TW 352482 B TW352482 B TW 352482B TW 086111535 A TW086111535 A TW 086111535A TW 86111535 A TW86111535 A TW 86111535A TW 352482 B TW352482 B TW 352482B
- Authority
- TW
- Taiwan
- Prior art keywords
- concentration
- type
- passive waveguide
- well
- semiconductor laser
- Prior art date
Links
Abstract
A novel design of GaInP/AlGaInP structure comprises: (1) n typeGaAs substrate; (2) 0.5 um, concentration 2 x 10<-18> cm<3> n type GaAs buffer layer; (3) 0.5 um, concentration 2 x 10<-17> cm<3> n type Al-0.6In-0.5P shield layer; (4) 2,000A, concentration 4 x 10<-17> cm<3> n type(Al-0.6Ga-0.4)In-0.5P passive waveguide well; (5) 7,000A, concentration 4 x 10<-17> cm<3> n typeAl-0.5In-0.5P passive waveguide energy protection layer; (6) 900A, non-doped(Al-0.6Ga-0.4)In-0.5P photo confinement; (7) 80A, non-dopedGa-0.42In-0.58P strain quantum well; (8) 900A, concentration 4 x 10<-17> cm<3> n type(Al-0.6Ga-0.4)In-0.5P passive waveguide well; (9) 7,000A, concentration 5 x 10<-17> cm<3> p typeAl-0.5In-0.5P passive waveguide energy protection; (10)2,000A, concentration 5 x 10<-17> cm<3> p type (Al-0.6Ga-0.4)In-0.58P passive waveguide well; (11) 100A, concentration 1 x 10<-18> cm<3> p typeGaInP shield layer; (12) 100A, concentration 4 x 10<-17> cm<3> p typeGaAs conductive layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086111535A TW352482B (en) | 1997-08-12 | 1997-08-12 | Red semiconductor laser of low beam divergence |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086111535A TW352482B (en) | 1997-08-12 | 1997-08-12 | Red semiconductor laser of low beam divergence |
Publications (1)
Publication Number | Publication Date |
---|---|
TW352482B true TW352482B (en) | 1999-02-11 |
Family
ID=57940081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086111535A TW352482B (en) | 1997-08-12 | 1997-08-12 | Red semiconductor laser of low beam divergence |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW352482B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6625190B1 (en) * | 1999-08-26 | 2003-09-23 | Fuji Photo Film Co., Ltd. | Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layers |
-
1997
- 1997-08-12 TW TW086111535A patent/TW352482B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6625190B1 (en) * | 1999-08-26 | 2003-09-23 | Fuji Photo Film Co., Ltd. | Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layers |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6127691A (en) | Semiconductor laser device | |
TW415112B (en) | Buried heterostructure | |
CA2329416A1 (en) | Narrow spectral width high power distributed feedback semiconductor lasers | |
JPS6489491A (en) | Surface luminous semiconductor laser | |
JPH10190050A (en) | Luminous diode | |
EP0860916A3 (en) | Long wavelength VCSEL | |
EP0788203A4 (en) | Semiconductor laser device | |
Tsang et al. | cw narrow beam (AlGa) As multiquantum‐well heterostructure lasers grown by molecular beam epitaxy | |
TW352482B (en) | Red semiconductor laser of low beam divergence | |
JPH04144183A (en) | Surface light emitting type semiconductor laser | |
Mawst et al. | Optimization and characterization of index-guided visible AlGaAs/GaAs graded barrier quantum well laser diodes | |
JP3859839B2 (en) | Refractive index semiconductor laser device | |
EP0279815B1 (en) | Quantum well laser with charge carrier density enhancement | |
TW375848B (en) | Visible wavelength vertical cavity surface emitting laser | |
US5617437A (en) | Semiconductor laser | |
ISHIKAWA et al. | Room Temperature CW Operation of Transverse Mode Stabilized InGaAIP Visible Lighe Laser Diodes | |
EP0368087A3 (en) | Gaalinas semiconductor laser | |
JPS56112782A (en) | Semiconductor laser | |
Xu et al. | Monolithic integration of an InGaAsP-InP MQW laser/waveguide using a twin-guide structure with a mode selection layer | |
ES476750A1 (en) | Infra red light emissive devices. | |
JPS6286782A (en) | Quantum well laser | |
JPS6432693A (en) | Semiconductor optical functional light-emitting element | |
Garbuzov et al. | Influence of saturation of the gain on threshold characteristics of quantum-well InGaAsP/GaAs heterolasers | |
Ou et al. | Surface‐emitting lasers with optical cavity along the [111] direction | |
Skogen et al. | Small-footprint, high-efficiency, integrated transmitters for high-speed optical interconnect applications |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |