TW352482B - Red semiconductor laser of low beam divergence - Google Patents

Red semiconductor laser of low beam divergence

Info

Publication number
TW352482B
TW352482B TW086111535A TW86111535A TW352482B TW 352482 B TW352482 B TW 352482B TW 086111535 A TW086111535 A TW 086111535A TW 86111535 A TW86111535 A TW 86111535A TW 352482 B TW352482 B TW 352482B
Authority
TW
Taiwan
Prior art keywords
concentration
type
passive waveguide
well
semiconductor laser
Prior art date
Application number
TW086111535A
Other languages
Chinese (zh)
Inventor
Yan-Kuen Su
Wen-Liang Li
Shou-Jin Chang
Jin-Yau Tsai
Original Assignee
Nat Science Council
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Science Council filed Critical Nat Science Council
Priority to TW086111535A priority Critical patent/TW352482B/en
Application granted granted Critical
Publication of TW352482B publication Critical patent/TW352482B/en

Links

Abstract

A novel design of GaInP/AlGaInP structure comprises: (1) n typeGaAs substrate; (2) 0.5 um, concentration 2 x 10<-18> cm<3> n type GaAs buffer layer; (3) 0.5 um, concentration 2 x 10<-17> cm<3> n type Al-0.6In-0.5P shield layer; (4) 2,000A, concentration 4 x 10<-17> cm<3> n type(Al-0.6Ga-0.4)In-0.5P passive waveguide well; (5) 7,000A, concentration 4 x 10<-17> cm<3> n typeAl-0.5In-0.5P passive waveguide energy protection layer; (6) 900A, non-doped(Al-0.6Ga-0.4)In-0.5P photo confinement; (7) 80A, non-dopedGa-0.42In-0.58P strain quantum well; (8) 900A, concentration 4 x 10<-17> cm<3> n type(Al-0.6Ga-0.4)In-0.5P passive waveguide well; (9) 7,000A, concentration 5 x 10<-17> cm<3> p typeAl-0.5In-0.5P passive waveguide energy protection; (10)2,000A, concentration 5 x 10<-17> cm<3> p type (Al-0.6Ga-0.4)In-0.58P passive waveguide well; (11) 100A, concentration 1 x 10<-18> cm<3> p typeGaInP shield layer; (12) 100A, concentration 4 x 10<-17> cm<3> p typeGaAs conductive layer.
TW086111535A 1997-08-12 1997-08-12 Red semiconductor laser of low beam divergence TW352482B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086111535A TW352482B (en) 1997-08-12 1997-08-12 Red semiconductor laser of low beam divergence

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086111535A TW352482B (en) 1997-08-12 1997-08-12 Red semiconductor laser of low beam divergence

Publications (1)

Publication Number Publication Date
TW352482B true TW352482B (en) 1999-02-11

Family

ID=57940081

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086111535A TW352482B (en) 1997-08-12 1997-08-12 Red semiconductor laser of low beam divergence

Country Status (1)

Country Link
TW (1) TW352482B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6625190B1 (en) * 1999-08-26 2003-09-23 Fuji Photo Film Co., Ltd. Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6625190B1 (en) * 1999-08-26 2003-09-23 Fuji Photo Film Co., Ltd. Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layers

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