TW350097B - Etching method for improvement of metal silicon selectivity and etching rate - Google Patents

Etching method for improvement of metal silicon selectivity and etching rate

Info

Publication number
TW350097B
TW350097B TW086119491A TW86119491A TW350097B TW 350097 B TW350097 B TW 350097B TW 086119491 A TW086119491 A TW 086119491A TW 86119491 A TW86119491 A TW 86119491A TW 350097 B TW350097 B TW 350097B
Authority
TW
Taiwan
Prior art keywords
layer
improvement
etching
silicified
metal
Prior art date
Application number
TW086119491A
Other languages
Chinese (zh)
Inventor
Jr-Shiang Jeng
Kuen-Juo Chen
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW086119491A priority Critical patent/TW350097B/en
Application granted granted Critical
Publication of TW350097B publication Critical patent/TW350097B/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A sort of improvement for etching method for improvement of metal silicon selectivity and etching rate, including the following steps: provision of a substrate, having an oxidized layer, a port, a conductive layer and a plurality of source/drain zone, including the port a port oxidization layer and a poly crystal silicon layer, with a plurality of silicified metal layer on the conductive layer, and on the poly silicone layer and the source/drain zone: forming a dielectric layer on the substrate and the silicified metal layers; and mask being defined by etching by means of a gas mixed by carbon tetrafluoride, trifluoride methane, nitrogen, for removal part of the dielectric layer and exposing the silicified metal layer, for further forming of a metal nitride layer on the surface of the silicified metals.
TW086119491A 1997-12-22 1997-12-22 Etching method for improvement of metal silicon selectivity and etching rate TW350097B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086119491A TW350097B (en) 1997-12-22 1997-12-22 Etching method for improvement of metal silicon selectivity and etching rate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086119491A TW350097B (en) 1997-12-22 1997-12-22 Etching method for improvement of metal silicon selectivity and etching rate

Publications (1)

Publication Number Publication Date
TW350097B true TW350097B (en) 1999-01-11

Family

ID=57939886

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086119491A TW350097B (en) 1997-12-22 1997-12-22 Etching method for improvement of metal silicon selectivity and etching rate

Country Status (1)

Country Link
TW (1) TW350097B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6399508B1 (en) 1999-01-12 2002-06-04 Applied Materials, Inc. Method for metal etch using a dielectric hard mask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6399508B1 (en) 1999-01-12 2002-06-04 Applied Materials, Inc. Method for metal etch using a dielectric hard mask

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