TW350097B - Etching method for improvement of metal silicon selectivity and etching rate - Google Patents
Etching method for improvement of metal silicon selectivity and etching rateInfo
- Publication number
- TW350097B TW350097B TW086119491A TW86119491A TW350097B TW 350097 B TW350097 B TW 350097B TW 086119491 A TW086119491 A TW 086119491A TW 86119491 A TW86119491 A TW 86119491A TW 350097 B TW350097 B TW 350097B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- improvement
- etching
- silicified
- metal
- Prior art date
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A sort of improvement for etching method for improvement of metal silicon selectivity and etching rate, including the following steps: provision of a substrate, having an oxidized layer, a port, a conductive layer and a plurality of source/drain zone, including the port a port oxidization layer and a poly crystal silicon layer, with a plurality of silicified metal layer on the conductive layer, and on the poly silicone layer and the source/drain zone: forming a dielectric layer on the substrate and the silicified metal layers; and mask being defined by etching by means of a gas mixed by carbon tetrafluoride, trifluoride methane, nitrogen, for removal part of the dielectric layer and exposing the silicified metal layer, for further forming of a metal nitride layer on the surface of the silicified metals.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086119491A TW350097B (en) | 1997-12-22 | 1997-12-22 | Etching method for improvement of metal silicon selectivity and etching rate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086119491A TW350097B (en) | 1997-12-22 | 1997-12-22 | Etching method for improvement of metal silicon selectivity and etching rate |
Publications (1)
Publication Number | Publication Date |
---|---|
TW350097B true TW350097B (en) | 1999-01-11 |
Family
ID=57939886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086119491A TW350097B (en) | 1997-12-22 | 1997-12-22 | Etching method for improvement of metal silicon selectivity and etching rate |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW350097B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6399508B1 (en) | 1999-01-12 | 2002-06-04 | Applied Materials, Inc. | Method for metal etch using a dielectric hard mask |
-
1997
- 1997-12-22 TW TW086119491A patent/TW350097B/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6399508B1 (en) | 1999-01-12 | 2002-06-04 | Applied Materials, Inc. | Method for metal etch using a dielectric hard mask |
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