TW349246B - Hemispherical-grained silicon top gate electrode with enhanced soft error immunity in SRAM - Google Patents
Hemispherical-grained silicon top gate electrode with enhanced soft error immunity in SRAMInfo
- Publication number
- TW349246B TW349246B TW085109704A TW85109704A TW349246B TW 349246 B TW349246 B TW 349246B TW 085109704 A TW085109704 A TW 085109704A TW 85109704 A TW85109704 A TW 85109704A TW 349246 B TW349246 B TW 349246B
- Authority
- TW
- Taiwan
- Prior art keywords
- sram
- charge storage
- hemispherical
- storage node
- gate electrode
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
Abstract
An SRAM having word lines and bit lines for capturing memory cells of SRAM, the SRAM memory cells comprising: a first transistor having a first gate and first source/drain regions connected to a first charge storage node; a second transistor having a second gate and second source/drain regions connected to a second charge storage node, the first gate being connected to the second charge storage node, and the second gate being connected to the first charge storage node; and a first charge storage capacitance being connected to the first charge storage node, the first charge storage capacitor comprising a lower side electrode having a textured surface, a dielectric layer, and an upper electrode being connected to a constant potential.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085109704A TW349246B (en) | 1996-08-09 | 1996-08-09 | Hemispherical-grained silicon top gate electrode with enhanced soft error immunity in SRAM |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085109704A TW349246B (en) | 1996-08-09 | 1996-08-09 | Hemispherical-grained silicon top gate electrode with enhanced soft error immunity in SRAM |
Publications (1)
Publication Number | Publication Date |
---|---|
TW349246B true TW349246B (en) | 1999-01-01 |
Family
ID=57939823
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085109704A TW349246B (en) | 1996-08-09 | 1996-08-09 | Hemispherical-grained silicon top gate electrode with enhanced soft error immunity in SRAM |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW349246B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6535417B2 (en) | 2000-07-31 | 2003-03-18 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor storage device |
-
1996
- 1996-08-09 TW TW085109704A patent/TW349246B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6535417B2 (en) | 2000-07-31 | 2003-03-18 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor storage device |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |