TW349246B - Hemispherical-grained silicon top gate electrode with enhanced soft error immunity in SRAM - Google Patents

Hemispherical-grained silicon top gate electrode with enhanced soft error immunity in SRAM

Info

Publication number
TW349246B
TW349246B TW085109704A TW85109704A TW349246B TW 349246 B TW349246 B TW 349246B TW 085109704 A TW085109704 A TW 085109704A TW 85109704 A TW85109704 A TW 85109704A TW 349246 B TW349246 B TW 349246B
Authority
TW
Taiwan
Prior art keywords
sram
charge storage
hemispherical
storage node
gate electrode
Prior art date
Application number
TW085109704A
Other languages
Chinese (zh)
Inventor
shi-wei Sun
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW085109704A priority Critical patent/TW349246B/en
Application granted granted Critical
Publication of TW349246B publication Critical patent/TW349246B/en

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  • Semiconductor Memories (AREA)

Abstract

An SRAM having word lines and bit lines for capturing memory cells of SRAM, the SRAM memory cells comprising: a first transistor having a first gate and first source/drain regions connected to a first charge storage node; a second transistor having a second gate and second source/drain regions connected to a second charge storage node, the first gate being connected to the second charge storage node, and the second gate being connected to the first charge storage node; and a first charge storage capacitance being connected to the first charge storage node, the first charge storage capacitor comprising a lower side electrode having a textured surface, a dielectric layer, and an upper electrode being connected to a constant potential.
TW085109704A 1996-08-09 1996-08-09 Hemispherical-grained silicon top gate electrode with enhanced soft error immunity in SRAM TW349246B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW085109704A TW349246B (en) 1996-08-09 1996-08-09 Hemispherical-grained silicon top gate electrode with enhanced soft error immunity in SRAM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085109704A TW349246B (en) 1996-08-09 1996-08-09 Hemispherical-grained silicon top gate electrode with enhanced soft error immunity in SRAM

Publications (1)

Publication Number Publication Date
TW349246B true TW349246B (en) 1999-01-01

Family

ID=57939823

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085109704A TW349246B (en) 1996-08-09 1996-08-09 Hemispherical-grained silicon top gate electrode with enhanced soft error immunity in SRAM

Country Status (1)

Country Link
TW (1) TW349246B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6535417B2 (en) 2000-07-31 2003-03-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor storage device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6535417B2 (en) 2000-07-31 2003-03-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor storage device

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees