TW345766B - VCSEL with distributed Bragg reflectors for visible light - Google Patents

VCSEL with distributed Bragg reflectors for visible light

Info

Publication number
TW345766B
TW345766B TW086100793A TW86100793A TW345766B TW 345766 B TW345766 B TW 345766B TW 086100793 A TW086100793 A TW 086100793A TW 86100793 A TW86100793 A TW 86100793A TW 345766 B TW345766 B TW 345766B
Authority
TW
Taiwan
Prior art keywords
distributed bragg
bragg reflector
disposed
vcsel
visible light
Prior art date
Application number
TW086100793A
Other languages
English (en)
Inventor
Wenbin Jiang
Ramdani Jamal
S Lebby Michael
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of TW345766B publication Critical patent/TW345766B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
TW086100793A 1996-03-15 1997-01-24 VCSEL with distributed Bragg reflectors for visible light TW345766B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/616,359 US5706306A (en) 1996-03-15 1996-03-15 VCSEL with distributed Bragg reflectors for visible light

Publications (1)

Publication Number Publication Date
TW345766B true TW345766B (en) 1998-11-21

Family

ID=24469093

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086100793A TW345766B (en) 1996-03-15 1997-01-24 VCSEL with distributed Bragg reflectors for visible light

Country Status (6)

Country Link
US (1) US5706306A (zh)
JP (1) JPH104243A (zh)
KR (1) KR100469546B1 (zh)
CN (1) CN1166067A (zh)
DE (1) DE19708992A1 (zh)
TW (1) TW345766B (zh)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6243407B1 (en) 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
US5953362A (en) * 1997-12-15 1999-09-14 Pamulapati; Jagadeesh Strain induce control of polarization states in vertical cavity surface emitting lasers and method of making same
US6160830A (en) * 1998-03-04 2000-12-12 Motorola, Inc. Semiconductor laser device and method of manufacture
US6317444B1 (en) * 1998-06-12 2001-11-13 Agere System Optoelectronics Guardian Corp. Optical device including carbon-doped contact layers
US6301281B1 (en) * 1998-08-31 2001-10-09 Agilent Technologies, Inc. Semiconductor laser having co-doped distributed bragg reflectors
GB2344456B (en) * 1998-12-02 2000-12-27 Arima Optoelectronics Corp Semiconductor devices
GB2344457B (en) 1998-12-02 2000-12-27 Arima Optoelectronics Corp Semiconductor devices
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
US6621842B1 (en) 1999-10-15 2003-09-16 E20 Communications, Inc. Method and apparatus for long wavelength semiconductor lasers
DE10017337C2 (de) * 2000-04-07 2002-04-04 Vishay Semiconductor Gmbh Verfahren zum Herstellen lichtaussendender Halbleiterbauelemente
JP4592873B2 (ja) * 2000-05-24 2010-12-08 古河電気工業株式会社 面発光半導体レーザ素子
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
EP1298461A1 (en) * 2001-09-27 2003-04-02 Interuniversitair Microelektronica Centrum Vzw Distributed Bragg reflector comprising GaP and a semiconductor resonant cavity device comprising such DBR
US6853012B2 (en) * 2002-10-21 2005-02-08 Uni Light Technology Inc. AlGaInP light emitting diode
US6845116B2 (en) * 2002-10-24 2005-01-18 Wisconsin Alumni Research Foundation Narrow lateral waveguide laser
CN1319175C (zh) * 2003-01-17 2007-05-30 中国科学院半导体研究所 基于激子效应的多量子阱光调制器/探测器列阵
US7339666B2 (en) * 2004-09-14 2008-03-04 Hewlett-Packard Development Company, L.P. Light-amplifying structures and methods for surface-enhanced Raman spectroscopy
US7177021B2 (en) * 2004-09-14 2007-02-13 Hewlett-Packard Development Company, L.P. Integrated radiation sources and amplifying structures, and methods of using the same
US7307719B2 (en) * 2004-09-14 2007-12-11 Hewlett-Packard Development Company, L.P. Wavelength-tunable excitation radiation amplifying structure and method
US7408967B2 (en) * 2005-12-19 2008-08-05 Emcore Corporation Method of fabricating single mode VCSEL for optical mouse
US7511808B2 (en) * 2006-04-27 2009-03-31 Hewlett-Packard Development Company, L.P. Analyte stages including tunable resonant cavities and Raman signal-enhancing structures
CN102169392B (zh) * 2010-02-26 2013-01-23 深圳华映显示科技有限公司 触控面板及触控感测方法
US9124062B2 (en) * 2012-03-22 2015-09-01 Palo Alto Research Center Incorporated Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector
US9112331B2 (en) 2012-03-22 2015-08-18 Palo Alto Research Center Incorporated Surface emitting laser incorporating third reflector
US9112332B2 (en) 2012-06-14 2015-08-18 Palo Alto Research Center Incorporated Electron beam pumped vertical cavity surface emitting laser
CN105164871A (zh) * 2013-06-20 2015-12-16 惠普发展公司，有限责任合伙企业 模式控制激光系统
CN106030938B (zh) * 2014-02-25 2020-05-19 皇家飞利浦有限公司 具有吸除剂层的发光半导体器件
CN106876590A (zh) * 2017-02-06 2017-06-20 华南师范大学 一种新型透明有机光伏电池
EP3514898A1 (en) * 2018-01-19 2019-07-24 Koninklijke Philips N.V. Vertical cavity surface emitting laser device with integrated photodiode
CN109038215A (zh) * 2018-08-28 2018-12-18 深亮智能技术（中山）有限公司 一种双氧化孔径的高功率高速垂直腔面发射激光器
CN112544021B (zh) * 2019-07-08 2024-02-06 泉州市三安光通讯科技有限公司 半导体激光光束整形器
CN113589322A (zh) * 2021-07-06 2021-11-02 太原理工大学 一种面向多线激光雷达的vcsel线性阵列

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5568499A (en) * 1995-04-07 1996-10-22 Sandia Corporation Optical device with low electrical and thermal resistance bragg reflectors

Also Published As

Publication number Publication date
CN1166067A (zh) 1997-11-26
KR100469546B1 (ko) 2005-04-25
US5706306A (en) 1998-01-06
KR970068060A (ko) 1997-10-13
DE19708992A1 (de) 1997-10-30
JPH104243A (ja) 1998-01-06

Similar Documents

Publication Publication Date Title
TW345766B (en) VCSEL with distributed Bragg reflectors for visible light
AU3629495A (en) Vertical geometry light emitting diode with group iii nitride active layer and extended lifetime
HK1015549A1 (en) Double heterojunction light emitting diode with gallium nitride active layer.
TW200625679A (en) Group Ⅲ nitride based quantum well light emitting device structures with an indium containing capping structure
DE69732713D1 (de) Lichtemittierende gegenstände mit lichtreflektierende stukturen
TW363295B (en) Ultraviolet/visible light emitting vertical cavity surface emitting laser and method of fabrication
DE69715337D1 (de) Halbleiterlaser mit aktiver Schicht in Quantentopstruktur, dessen Verwendungsverfahren, diesen beinhaltendes Lichtquellengerät sowie diesen verwendendes optisches Kommunikationssystem.
DE68906207D1 (de) Phase-deckschicht fuer dfb/dbr-laserdioden.
DE69827246D1 (de) Organische laser
DE69606596D1 (de) Halbleitende Emissionsvorrichtung mit schneller Wellenlängenmodulation
TW360985B (en) Semiconductor light emitting element and method for fabricating the same
TW338198B (en) Gallium nitride compound semiconductor light emitting element and method for fabrication of the same
US6643304B1 (en) Transparent substrate light emitting diode
DE599248T1 (de) Vielfach Molekular Gas-Laser gepumpt mit Halbleiter-Laser.
TW363294B (en) Improved semiconductor lasers and method for making the same
CA2106943A1 (en) Spin-Polarized Electron Emitter Having Semiconductor Opto-Electronic Layer with Split Valence Band
IT1256883B (it) Proiettore per veicoli, in particoalre autoveicoli.
KR970060602A (ko) 하이브리드 미러를 가지는 가시광 수직 캐비티 표면 발광 레이저
KR900002104A (ko) 변조기 장치
DE69826502D1 (de) Laserdiode mit vergrabener heterostruktur
TW200505042A (en) LED device
EP0621665A3 (en) Two-channel planar buried heterostructure laser diode with low lech current.
EP0824274A3 (en) Light emitting diode and manufacturing method therefor
TW264573B (en) Light emitting diode
MY111898A (en) Semiconductor laser