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Priority claimed from JP7086480Aexternal-prioritypatent/JPH08259372A/en
Application filed by Komatsu Denshi Kinzoku KkfiledCriticalKomatsu Denshi Kinzoku Kk
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Publication of TW344090BpublicationCriticalpatent/TW344090B/en
A method of supplying raw material for fabricating semiconductor single crystal according to a continuously charged method, utilizing two heaters for melting raw material bars which are disposed above a crucible containing melt of the raw material; then drawing up and forming single crystal simultaneously while the molten raw material flows to the crucible and, thereby fabricating the single crystal; in which the method is characterized by: melting two raw material bars simultaneously, determining the difference between the weight of the growing single crystal and the molten raw material to calculate the corresponding modification necessary for compensating the mismatch of charged raw material, using the modification and the reference supply rate of the raw material bars to adjust the reference supply rate of the two raw material bars, and simultaneously calculating the coordinates of the tips of the two raw material bars and keeping the tips at constant positions while the raw material bars start to melt initially by controlling the power of the two heaters based on the coordinates of the tips.
TW085103431A1995-03-161996-03-21Method for feeding stock in producing semiconductor single crystal by continuous charge method
TW344090B
(en)