TW337591B - Anti-reflection coating material - Google Patents

Anti-reflection coating material

Info

Publication number
TW337591B
TW337591B TW085116035A TW85116035A TW337591B TW 337591 B TW337591 B TW 337591B TW 085116035 A TW085116035 A TW 085116035A TW 85116035 A TW85116035 A TW 85116035A TW 337591 B TW337591 B TW 337591B
Authority
TW
Taiwan
Prior art keywords
coating material
pyrrolidone
ethyl
reflection coating
polymer
Prior art date
Application number
TW085116035A
Other languages
English (en)
Inventor
Satoshi Watanabe
Shigehiro Nagura
Toshinobu Ishiwara
Original Assignee
Shinetsu Chem Ind Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chem Ind Co filed Critical Shinetsu Chem Ind Co
Application granted granted Critical
Publication of TW337591B publication Critical patent/TW337591B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
TW085116035A 1996-04-15 1996-12-23 Anti-reflection coating material TW337591B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11708796 1996-04-15

Publications (1)

Publication Number Publication Date
TW337591B true TW337591B (en) 1998-08-01

Family

ID=14703077

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085116035A TW337591B (en) 1996-04-15 1996-12-23 Anti-reflection coating material

Country Status (3)

Country Link
US (1) US5814694A (zh)
KR (1) KR100257365B1 (zh)
TW (1) TW337591B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3666807B2 (ja) * 2001-12-03 2005-06-29 東京応化工業株式会社 ホトレジストパターンの形成方法およびホトレジスト積層体
JP3851594B2 (ja) * 2002-07-04 2006-11-29 Ａｚエレクトロニックマテリアルズ株式会社 反射防止コーティング用組成物およびパターン形成方法
JP4322205B2 (ja) * 2004-12-27 2009-08-26 東京応化工業株式会社 レジスト保護膜形成用材料およびこれを用いたレジストパターン形成方法
WO2023283413A1 (en) * 2021-07-08 2023-01-12 Zymergen Inc. Energy storage application electrolytes and electrode compositions comprised of heterocycles

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586235B2 (ja) * 1974-07-16 1983-02-03 日本電気株式会社 Ｍｉｓ ガタトランジスタカイロ
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPH0612452B2 (ja) * 1982-09-30 1994-02-16 ブリュ−ワ−・サイエンス・インコ−ポレイテッド 集積回路素子の製造方法
JPH0799730B2 (ja) * 1985-09-13 1995-10-25 株式会社日立製作所 パターン形成方法
JPS6262520A (ja) * 1985-09-13 1987-03-19 Hitachi Ltd パタ−ン形成方法
EP0249139B2 (en) * 1986-06-13 1998-03-11 MicroSi, Inc. (a Delaware corporation) Resist compositions and use
US5310619A (en) * 1986-06-13 1994-05-10 Microsi, Inc. Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable
JPH02227660A (ja) * 1989-02-28 1990-09-10 Sony Corp 表面弾性波遅延線による化学物質検出装置
EP0522990B1 (en) * 1991-06-28 1996-09-25 International Business Machines Corporation Top antireflective coating films
JPH06118630A (ja) * 1992-10-06 1994-04-28 Tokyo Ohka Kogyo Co Ltd 化学増幅型レジスト用塗布液組成物
JP3192505B2 (ja) * 1992-11-13 2001-07-30 東京応化工業株式会社 半導体素子製造用パターン形成方法
JP2878150B2 (ja) * 1994-04-27 1999-04-05 東京応化工業株式会社 レジスト用塗布液およびこれを用いたレジスト材料

Also Published As

Publication number Publication date
KR100257365B1 (ko) 2000-06-01
US5814694A (en) 1998-09-29

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees