TW337028B - Improvements to the chemical-mechanical polishing of semiconductor wafers - Google Patents
Improvements to the chemical-mechanical polishing of semiconductor wafersInfo
- Publication number
- TW337028B TW337028B TW086107567A TW86107567A TW337028B TW 337028 B TW337028 B TW 337028B TW 086107567 A TW086107567 A TW 086107567A TW 86107567 A TW86107567 A TW 86107567A TW 337028 B TW337028 B TW 337028B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- wafer
- opening
- main surface
- metal
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 7
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 235000012431 wafers Nutrition 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 4
- 239000000853 adhesive Substances 0.000 abstract 2
- 239000011247 coating layer Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000007517 polishing process Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP96480109 | 1996-12-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW337028B true TW337028B (en) | 1998-07-21 |
Family
ID=8225464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086107567A TW337028B (en) | 1996-12-13 | 1997-06-03 | Improvements to the chemical-mechanical polishing of semiconductor wafers |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6008119A (zh) |
| KR (1) | KR100296608B1 (zh) |
| DE (1) | DE69730577T2 (zh) |
| TW (1) | TW337028B (zh) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3701469B2 (ja) | 1998-06-12 | 2005-09-28 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| US6211068B1 (en) * | 1999-05-25 | 2001-04-03 | United Microelectronics Corp. | Dual damascene process for manufacturing interconnects |
| KR100596768B1 (ko) * | 1999-10-22 | 2006-07-04 | 주식회사 하이닉스반도체 | 반도체장치의 화학기계적연마 방법 |
| DE10000759C1 (de) * | 2000-01-11 | 2001-05-23 | Infineon Technologies Ag | Verfahren zur Erzeugung von Justiermarken |
| US6424137B1 (en) | 2000-09-18 | 2002-07-23 | Stmicroelectronics, Inc. | Use of acoustic spectral analysis for monitoring/control of CMP processes |
| US6515488B1 (en) | 2001-05-07 | 2003-02-04 | Stmicroelectronics, Inc. | Fingerprint detector with scratch resistant surface and embedded ESD protection grid |
| DE10127888A1 (de) * | 2001-06-08 | 2002-12-19 | Infineon Technologies Ag | Verfahren zur Bildung von Kontaktregionen von in einem Substrat integrierten Bauelementen |
| US6857938B1 (en) * | 2002-12-16 | 2005-02-22 | Cypress Semiconductor Corporation | Lot-to-lot feed forward CMP process |
| KR100805832B1 (ko) * | 2005-10-24 | 2008-02-21 | 삼성전자주식회사 | 화학기계적 연마 방법 및 이를 이용한 반도체 장치의 제조방법 |
| US8518817B2 (en) | 2010-09-22 | 2013-08-27 | International Business Machines Corporation | Method of electrolytic plating and semiconductor device fabrication |
| CN112563132B (zh) * | 2020-11-13 | 2024-06-04 | 北京遥测技术研究所 | 一种表面异质结构的快速减薄抛光方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4956313A (en) * | 1987-08-17 | 1990-09-11 | International Business Machines Corporation | Via-filling and planarization technique |
| EP0664559B1 (en) * | 1994-01-17 | 2000-05-31 | Sony Corporation | Process for planarizing surface of a semiconductor device |
| US5602423A (en) * | 1994-11-01 | 1997-02-11 | Texas Instruments Incorporated | Damascene conductors with embedded pillars |
| US5551986A (en) * | 1995-02-15 | 1996-09-03 | Taxas Instruments Incorporated | Mechanical scrubbing for particle removal |
| US5702563A (en) * | 1995-06-07 | 1997-12-30 | Advanced Micro Devices, Inc. | Reduced chemical-mechanical polishing particulate contamination |
| US5726099A (en) * | 1995-11-07 | 1998-03-10 | International Business Machines Corporation | Method of chemically mechanically polishing an electronic component using a non-selective ammonium persulfate slurry |
-
1997
- 1997-06-03 TW TW086107567A patent/TW337028B/zh not_active IP Right Cessation
- 1997-08-27 KR KR1019970041414A patent/KR100296608B1/ko not_active IP Right Cessation
- 1997-09-09 DE DE69730577T patent/DE69730577T2/de not_active Expired - Fee Related
- 1997-09-30 US US08/940,762 patent/US6008119A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69730577T2 (de) | 2005-09-22 |
| US6008119A (en) | 1999-12-28 |
| DE69730577D1 (de) | 2004-10-14 |
| KR19980063426A (ko) | 1998-10-07 |
| KR100296608B1 (ko) | 2001-08-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |