TW335555B - Nonvolatile memory cell - Google Patents

Nonvolatile memory cell

Info

Publication number
TW335555B
TW335555B TW086110856A TW86110856A TW335555B TW 335555 B TW335555 B TW 335555B TW 086110856 A TW086110856 A TW 086110856A TW 86110856 A TW86110856 A TW 86110856A TW 335555 B TW335555 B TW 335555B
Authority
TW
Taiwan
Prior art keywords
silicon
oxide layer
layer
memory cell
nonvolatile memory
Prior art date
Application number
TW086110856A
Other languages
Chinese (zh)
Inventor
Willer Josef
Framosch Martin
Schafer Herbert
Krautschneider Wolfgang
Hofmann Franz
Stengl Reinhard
Reisinger Hans
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW335555B publication Critical patent/TW335555B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

A sort of permanent memory cell, having: an MOS-transistor, which has a 3-layer dielectric as gate-dielectric (5); having said 3-layer dielectric a first silicon-oxide layer (51), a silicon-nitride layer (52) and a second silicon-oxide layer (53), said first silicon-oxide layer (51) and said second silicon-oxide layer (53) having a difference in thickness between 0.5nm and 1nm, said first silicon-oxide layer (51) and said second silicon-oxide layer (53) having a minor difference in thickness between 3nm and 5nm, silicon-nitride layer of a thickness of 5nm as minimum, the MOS transistor having a gate electrode (6) formed by n-dopant silicon.
TW086110856A 1996-08-01 1997-07-30 Nonvolatile memory cell TW335555B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19631147A DE19631147C2 (en) 1996-08-01 1996-08-01 Non-volatile memory cell

Publications (1)

Publication Number Publication Date
TW335555B true TW335555B (en) 1998-07-01

Family

ID=7801536

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086110856A TW335555B (en) 1996-08-01 1997-07-30 Nonvolatile memory cell

Country Status (6)

Country Link
EP (1) EP0916161A1 (en)
JP (1) JP2000515325A (en)
KR (1) KR20000035785A (en)
DE (1) DE19631147C2 (en)
TW (1) TW335555B (en)
WO (1) WO1998006139A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10110150A1 (en) * 2001-03-02 2002-09-19 Infineon Technologies Ag Method for producing metallic bit lines for memory cell arrays, method for producing memory cell arrays and memory cell array
KR100426481B1 (en) * 2001-06-26 2004-04-13 주식회사 하이닉스반도체 Method of manufacturing a code address memory cell
DE10130765A1 (en) 2001-06-26 2003-01-09 Infineon Technologies Ag Transistor arrangement, method for operating a transistor arrangement as a data memory and method for producing a transistor arrangement
US6853587B2 (en) * 2002-06-21 2005-02-08 Micron Technology, Inc. Vertical NROM having a storage density of 1 bit per 1F2
DE10241172B4 (en) 2002-09-05 2008-01-10 Qimonda Ag Semiconductor memory with vertical memory transistors and method for its production
FR2861123B1 (en) * 2003-10-15 2006-03-03 Somfy METHOD FOR INITIALIZING AND CONTROLLING AN INSTALLATION COMPRISING WIND SENSITIVE SCREENS
DE10352641A1 (en) * 2003-11-11 2005-02-17 Infineon Technologies Ag Charge-trapping memory cell especially SONOS- and NROM- storage cells, has memory layer sequence for charge-trapping with memory zone between confinement layers
US7790516B2 (en) 2006-07-10 2010-09-07 Qimonda Ag Method of manufacturing at least one semiconductor component and memory cells

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05110114A (en) * 1991-10-17 1993-04-30 Rohm Co Ltd Nonvolatile semiconductor memory device
US5436481A (en) * 1993-01-21 1995-07-25 Nippon Steel Corporation MOS-type semiconductor device and method of making the same
US5408115A (en) * 1994-04-04 1995-04-18 Motorola Inc. Self-aligned, split-gate EEPROM device

Also Published As

Publication number Publication date
DE19631147C2 (en) 2001-08-09
KR20000035785A (en) 2000-06-26
DE19631147A1 (en) 1998-02-05
WO1998006139A1 (en) 1998-02-12
JP2000515325A (en) 2000-11-14
EP0916161A1 (en) 1999-05-19

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