TW334633B - Extended-life method for soft-programming floating-gate memory cells - Google Patents

Extended-life method for soft-programming floating-gate memory cells

Info

Publication number
TW334633B
TW334633B TW085110665A TW85110665A TW334633B TW 334633 B TW334633 B TW 334633B TW 085110665 A TW085110665 A TW 085110665A TW 85110665 A TW85110665 A TW 85110665A TW 334633 B TW334633 B TW 334633B
Authority
TW
Taiwan
Prior art keywords
voltage
soft
drain
programming
applying
Prior art date
Application number
TW085110665A
Other languages
English (en)
Inventor
Mehrad Freidoon
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW334633B publication Critical patent/TW334633B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
TW085110665A 1995-08-30 1996-09-02 Extended-life method for soft-programming floating-gate memory cells TW334633B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/521,555 US5576992A (en) 1995-08-30 1995-08-30 Extended-life method for soft-programming floating-gate memory cells

Publications (1)

Publication Number Publication Date
TW334633B true TW334633B (en) 1998-06-21

Family

ID=24077193

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085110665A TW334633B (en) 1995-08-30 1996-09-02 Extended-life method for soft-programming floating-gate memory cells

Country Status (6)

Country Link
US (1) US5576992A (zh)
EP (1) EP0764953B1 (zh)
JP (1) JP3869891B2 (zh)
KR (1) KR970012768A (zh)
DE (1) DE69620698T2 (zh)
TW (1) TW334633B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11423998B2 (en) 2020-05-22 2022-08-23 Windbond Electronics Corp. Semiconductor device and reading method thereof

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ATE238610T1 (de) * 1994-03-03 2003-05-15 Rohm Corp Niederspannungs-eintransistor-flash-eeprom-zell mit fowler-nordheim programmier- und löschung
JPH08263992A (ja) * 1995-03-24 1996-10-11 Sharp Corp 不揮発性半導体記憶装置の書き込み方法
JPH0997500A (ja) * 1995-09-29 1997-04-08 Toshiba Corp 不揮発性半導体記憶装置
KR100323554B1 (ko) 1997-05-14 2002-03-08 니시무로 타이죠 불휘발성반도체메모리장치
JP3189740B2 (ja) * 1997-06-20 2001-07-16 日本電気株式会社 不揮発性半導体メモリのデータ修復方法
EP0908895A1 (en) * 1997-10-09 1999-04-14 STMicroelectronics S.r.l. Controlled hot-electron writing method for non-volatile memory cells
US6240023B1 (en) * 1998-02-27 2001-05-29 Micron Technology, Inc. Method for efficiently executing soft programming of a memory block
US6587903B2 (en) 1998-02-27 2003-07-01 Micron Technology, Inc. Soft programming for recovery of overerasure
JP4057756B2 (ja) * 2000-03-01 2008-03-05 松下電器産業株式会社 半導体集積回路
JP3631463B2 (ja) * 2001-12-27 2005-03-23 株式会社東芝 不揮発性半導体記憶装置
US6438037B1 (en) * 2001-05-09 2002-08-20 Advanced Micro Devices, Inc. Threshold voltage compacting for non-volatile semiconductor memory designs
US6493269B1 (en) * 2001-05-31 2002-12-10 Sandisk Corporation Dual cell reading and writing technique
US6795349B2 (en) * 2002-02-28 2004-09-21 Sandisk Corporation Method and system for efficiently reading and programming of dual cell memory elements
US6795348B2 (en) * 2002-05-29 2004-09-21 Micron Technology, Inc. Method and apparatus for erasing flash memory
JP4049641B2 (ja) * 2002-09-06 2008-02-20 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US6847557B2 (en) * 2003-01-24 2005-01-25 Winbond Electronics Corp. Method of erasing non-volatile memory data
US7630237B2 (en) 2003-02-06 2009-12-08 Sandisk Corporation System and method for programming cells in non-volatile integrated memory devices
US6856551B2 (en) 2003-02-06 2005-02-15 Sandisk Corporation System and method for programming cells in non-volatile integrated memory devices
ITTO20030115A1 (it) * 2003-02-17 2004-08-18 St Microelectronics Srl Metodo di soft-programmazione per un dispositivo di
US7085170B2 (en) 2003-08-07 2006-08-01 Micron Technology, Ind. Method for erasing an NROM cell
US7230851B2 (en) * 2004-12-23 2007-06-12 Sandisk Corporation Reducing floating gate to floating gate coupling effect
US7746706B2 (en) * 2006-12-15 2010-06-29 Spansion Llc Methods and systems for memory devices
US7564711B2 (en) * 2007-02-20 2009-07-21 Sandisk Corporation Multiple pass write sequence for non-volatile storage
KR101177215B1 (ko) * 2010-10-26 2012-08-24 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법

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US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
JPH01162359A (ja) * 1987-12-18 1989-06-26 Fujitsu Ltd 不揮発性半導体記憶装置
US5042009A (en) * 1988-12-09 1991-08-20 Waferscale Integration, Inc. Method for programming a floating gate memory device
JPH02183496A (ja) * 1989-01-07 1990-07-18 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US4996669A (en) * 1989-03-08 1991-02-26 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND memory cell structure
US5272669A (en) * 1991-02-20 1993-12-21 Sundisk Corporation Method and structure for programming floating gate memory cells
US5400286A (en) * 1993-08-17 1995-03-21 Catalyst Semiconductor Corp. Self-recovering erase scheme to enhance flash memory endurance
US5467306A (en) * 1993-10-04 1995-11-14 Texas Instruments Incorporated Method of using source bias to increase threshold voltages and/or to correct for over-erasure of flash eproms
US5487033A (en) * 1994-06-28 1996-01-23 Intel Corporation Structure and method for low current programming of flash EEPROMS
JP3238574B2 (ja) * 1994-07-28 2001-12-17 株式会社東芝 不揮発性半導体記憶装置とその消去方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11423998B2 (en) 2020-05-22 2022-08-23 Windbond Electronics Corp. Semiconductor device and reading method thereof

Also Published As

Publication number Publication date
EP0764953B1 (en) 2002-04-17
DE69620698T2 (de) 2002-10-31
EP0764953A3 (en) 1998-10-28
KR970012768A (ko) 1997-03-29
DE69620698D1 (de) 2002-05-23
JP3869891B2 (ja) 2007-01-17
EP0764953A2 (en) 1997-03-26
JPH09120691A (ja) 1997-05-06
US5576992A (en) 1996-11-19

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees