TW333663B - The method for uniformly coating photoresist - Google Patents

The method for uniformly coating photoresist

Info

Publication number
TW333663B
TW333663B TW086114326A TW86114326A TW333663B TW 333663 B TW333663 B TW 333663B TW 086114326 A TW086114326 A TW 086114326A TW 86114326 A TW86114326 A TW 86114326A TW 333663 B TW333663 B TW 333663B
Authority
TW
Taiwan
Prior art keywords
rotating speed
semiconductor wafer
enable
uniformly coating
photoresist
Prior art date
Application number
TW086114326A
Other languages
Chinese (zh)
Inventor
Lih-Ming Wang
Original Assignee
Vanguard Int Semiconduct Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW086114326A priority Critical patent/TW333663B/en
Application granted granted Critical
Publication of TW333663B publication Critical patent/TW333663B/en

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

A method for uniformly coating photoresist on semiconductor wafer, it includes following steps: Use 1st rotating speed to rotate semiconductor wafer on central axis of semiconductor wafer, and simultaneously spray photoresist on top surface of semiconductor wafer. Stop spray photoresist, and keep the semiconductor wafer at 1st rotating speed. Accelerate semiconductor wafer to enable the rotating speed accelerating from 1st rotating speed to 2nd rotating speed. Accelerate semiconductor wafer to enable the rotating speed accelerating from 2nd rotating speed to 3rd rotating speed, for determining the thickness of PR layer coated on semiconductor wafer. Reduce semiconductor wafer speed to enable the rotating speed reducing from 3rd rotating speed to 4th rotating speed, and clean the backside of semiconductor wafer. Keep the semiconductor wafer at 4th rotating speed. Stop to rotate semiconductor substrate before moving out the semiconductor wafer.
TW086114326A 1997-10-01 1997-10-01 The method for uniformly coating photoresist TW333663B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086114326A TW333663B (en) 1997-10-01 1997-10-01 The method for uniformly coating photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086114326A TW333663B (en) 1997-10-01 1997-10-01 The method for uniformly coating photoresist

Publications (1)

Publication Number Publication Date
TW333663B true TW333663B (en) 1998-06-11

Family

ID=58262906

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086114326A TW333663B (en) 1997-10-01 1997-10-01 The method for uniformly coating photoresist

Country Status (1)

Country Link
TW (1) TW333663B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI785626B (en) * 2020-05-29 2022-12-01 日商斯庫林集團股份有限公司 Peripheral portion coating apparatus and peripheral portion coating method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI785626B (en) * 2020-05-29 2022-12-01 日商斯庫林集團股份有限公司 Peripheral portion coating apparatus and peripheral portion coating method

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees