TW329563B - The manufacturing method for load resistors of SRAM - Google Patents
The manufacturing method for load resistors of SRAMInfo
- Publication number
- TW329563B TW329563B TW085106541A TW85106541A TW329563B TW 329563 B TW329563 B TW 329563B TW 085106541 A TW085106541 A TW 085106541A TW 85106541 A TW85106541 A TW 85106541A TW 329563 B TW329563 B TW 329563B
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric
- conducting device
- manufacturing
- sram
- load resistors
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/136—Resistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/926—Dummy metallization
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085106541A TW329563B (en) | 1996-06-01 | 1996-06-01 | The manufacturing method for load resistors of SRAM |
US08/686,587 US5686338A (en) | 1996-06-01 | 1996-07-26 | Process for fabricating high-resistance load resistors using dummy polysilicon in four-transistor SRAM devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085106541A TW329563B (en) | 1996-06-01 | 1996-06-01 | The manufacturing method for load resistors of SRAM |
Publications (1)
Publication Number | Publication Date |
---|---|
TW329563B true TW329563B (en) | 1998-04-11 |
Family
ID=21625270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085106541A TW329563B (en) | 1996-06-01 | 1996-06-01 | The manufacturing method for load resistors of SRAM |
Country Status (2)
Country | Link |
---|---|
US (1) | US5686338A (zh) |
TW (1) | TW329563B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5883417A (en) * | 1996-06-27 | 1999-03-16 | Winbond Electronics Corporation | Poly-load resistor for SRAM cell |
KR100200488B1 (ko) * | 1996-10-14 | 1999-06-15 | 윤종용 | 박막저항을 갖는 반도체 장치의 제조 방법 |
TW388109B (en) * | 1997-02-11 | 2000-04-21 | Winbond Electronics Corp | Method for fabricating SRAM polyload |
US6309956B1 (en) | 1997-09-30 | 2001-10-30 | Intel Corporation | Fabricating low K dielectric interconnect systems by using dummy structures to enhance process |
DE19834234C2 (de) * | 1998-07-29 | 2000-11-30 | Siemens Ag | Integrierter Halbleiterchip mit Füllstrukturen |
US7432179B2 (en) * | 2004-12-15 | 2008-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Controlling gate formation by removing dummy gate structures |
US7701034B2 (en) * | 2005-01-21 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dummy patterns in integrated circuit fabrication |
US20060257790A1 (en) * | 2005-05-16 | 2006-11-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | A semiconductor device structure and methods of manufacturing thereof |
US7939384B2 (en) * | 2008-12-19 | 2011-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Eliminating poly uni-direction line-end shortening using second cut |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR900005038B1 (ko) * | 1987-07-31 | 1990-07-18 | 삼성전자 주식회사 | 고저항 다결정 실리콘의 제조방법 |
JP2695185B2 (ja) * | 1988-05-02 | 1997-12-24 | 株式会社日立製作所 | 半導体集積回路装置及びその製造方法 |
US5187114A (en) * | 1991-06-03 | 1993-02-16 | Sgs-Thomson Microelectronics, Inc. | Method of making SRAM cell and structure with polycrystalline P-channel load devices |
-
1996
- 1996-06-01 TW TW085106541A patent/TW329563B/zh active
- 1996-07-26 US US08/686,587 patent/US5686338A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5686338A (en) | 1997-11-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW363276B (en) | Thin-film semiconductor device, thin-film transistor and method for fabricating the same | |
EP2500941A3 (en) | Semiconductor device and manufacturing method thereof | |
WO2003058723A1 (fr) | Transistor a film mince organique et son procede de fabrication | |
MY111990A (en) | Mos transistor and method for making the same | |
EP1227513A3 (en) | Method for forming variable-K gate dielectric | |
TW328154B (en) | Field effect transistor and CMOS element | |
TW326553B (en) | Semiconductor device and method of fabricating same | |
MY127799A (en) | Soi device with reduced junction capacitance. | |
WO2003103032A3 (en) | A method for making a semiconductor device having a high-k gate dielectric | |
EP0827202A3 (en) | Semiconductor device including protection means and method of fabricating the same | |
WO2003007384A3 (en) | Single-electron transistors and fabrication methods | |
TW329563B (en) | The manufacturing method for load resistors of SRAM | |
KR970013226A (ko) | 금속 플로그로서 형성된 다층 배선을 갖는 반도체 장치 및 그 제조 | |
MY114267A (en) | Metal-oxide semiconductor device | |
EP0869557A3 (en) | Ferroelectric memory cell and method of making the same | |
TW200505274A (en) | Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device | |
EP0899782A3 (en) | Method of manufacturing a field effect transistor | |
TW253992B (en) | Dielectric as load resistor in 4T SRAM | |
EP0802564A3 (en) | Semiconductor device having high resistive element including high melting point metal | |
TW356586B (en) | Semiconductor device having conductive layer and manufacturing method thereof | |
JPS5621363A (en) | Semiconductor device | |
JPS57204168A (en) | Semiconductor device | |
JPS56162873A (en) | Insulated gate type field effect semiconductor device | |
JPS5688366A (en) | Semiconductor device | |
TW333687B (en) | The method for forming poly-via in driver transistor |