TW329558B - The method & apparatus for manufacturing DRAM & SRAM on single semiconductor chip - Google Patents
The method & apparatus for manufacturing DRAM & SRAM on single semiconductor chipInfo
- Publication number
- TW329558B TW329558B TW085111532A TW85111532A TW329558B TW 329558 B TW329558 B TW 329558B TW 085111532 A TW085111532 A TW 085111532A TW 85111532 A TW85111532 A TW 85111532A TW 329558 B TW329558 B TW 329558B
- Authority
- TW
- Taiwan
- Prior art keywords
- sram
- dram
- manufacturing
- semiconductor chip
- film transistor
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085111532A TW329558B (en) | 1996-09-20 | 1996-09-20 | The method & apparatus for manufacturing DRAM & SRAM on single semiconductor chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085111532A TW329558B (en) | 1996-09-20 | 1996-09-20 | The method & apparatus for manufacturing DRAM & SRAM on single semiconductor chip |
Publications (1)
Publication Number | Publication Date |
---|---|
TW329558B true TW329558B (en) | 1998-04-11 |
Family
ID=58262543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085111532A TW329558B (en) | 1996-09-20 | 1996-09-20 | The method & apparatus for manufacturing DRAM & SRAM on single semiconductor chip |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW329558B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI385729B (zh) * | 2008-07-02 | 2013-02-11 | Applied Materials Inc | 用以製造高效能金屬氧化物和金屬氮氧化物薄膜電晶體之閘極介電層處理 |
US10211344B2 (en) | 2009-10-16 | 2019-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
-
1996
- 1996-09-20 TW TW085111532A patent/TW329558B/zh not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI385729B (zh) * | 2008-07-02 | 2013-02-11 | Applied Materials Inc | 用以製造高效能金屬氧化物和金屬氮氧化物薄膜電晶體之閘極介電層處理 |
US10211344B2 (en) | 2009-10-16 | 2019-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
US10593810B2 (en) | 2009-10-16 | 2020-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
US10770597B2 (en) | 2009-10-16 | 2020-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
US11302824B2 (en) | 2009-10-16 | 2022-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
US11742432B2 (en) | 2009-10-16 | 2023-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |