經濟部中央樣準局員工消费合作社印装 322618 at B7 五、發明説明（I ) 詳細說明： 本發明是有關積體電路之淺渠溝隔離技術，特別是有關淺渠 溝隔離技術中渠溝填充技術之改良。 在進入元件積集度提高、尺寸縮小的深次微米領域，各種積 體電路的製程一直在改變。目前積體轚路最常使用的電晶體是互 補式金氣半電晶體(CMOS)，在道種電晶體的製程中，需要有許多 的隔離製程，作爲主動區的絕緣之用。習知的隔離技術是使用區 域氧化法(L0C0S)，使用較厚的氧化眉作爲隔離之用，但是厚氣化 層會佔據許多面積，降低元件在晶圓上的積集度，於是新的方法 被提出。利用在主動區挖下一道深渠溝，再回填氣化矽至渠溝 中，形成良好的渠溝隔離。使用淺渠溝隔離技術，最常會遇到一 個問題，是在回填絕緣材料至渠溝時，不能形成很好的填入，在 後續的製程中，隔離屑會很容易遭受到破壞。在使用臭氧四乙氧 基矽烷爲渠溝回填材料時，會因底層圜案密度的不同，使得在渠 溝上沉積的速率不一致，這造成氧化物的結構鬆散以及出現孔 洞，使得在後續製程中會有缺陷發生。 請參閱圖一，在基板11挖下一道深的渠溝，在渠溝表面作表 面處理，回填氣化眉13至渠溝中，在回填臭氣四乙氣基矽烷的過 程中，若氣化物的沉積速率不一致，會在氧化眉13的中間形成凹 洞A，而且在後續製程中，會在氣化靥13的表面造成凹陷B，使得 隔離變差。 請參閱圖二，顯示渠溝的頂視圖，在沉積氧化靥13後，因爲 臭氧四乙氧基矽烷對底層圖案的敏感度，會在渠溝的邊緣產生空 洞C，使得氣化眉13的結構變差。 5 (請先聞讀背面之注意事項再填寫本頁) 、τPrinted 322618 at B7 by the Employee Consumer Cooperative of the Central Prototype Bureau of the Ministry of Economy V. Description of the invention (I) Detailed description: The present invention relates to the shallow trench isolation technology of integrated circuits, especially the trench filling in shallow trench isolation technology Improvement of technology. In the deep sub-micron field where the degree of component accumulation is improved and the size is reduced, the process of various integrated circuits has been changing. At present, the most commonly used transistors in integrated circuits are complementary gold gas semi-transistors (CMOS). In the process of transistor transistors, many isolation processes are required to insulate the active area. The conventional isolation technology is to use the local oxidation method (L0C0S), using a thicker oxide eyebrow for isolation, but the thick vaporized layer will occupy a lot of area, reducing the accumulation of components on the wafer, so the new method Been proposed. Use the next deep trench to dig in the active area, and then backfill the vaporized silicon into the trench to form a good trench isolation. When using shallow trench isolation technology, the most common problem is that when the insulating material is backfilled into the trench, a good fill cannot be formed. In the subsequent process, the isolation chips will be easily damaged. When ozone tetraethoxysilane is used as a trench backfill material, the deposition rate on the trench will be inconsistent due to the difference in the density of the underlying layer, which will cause the structure of the oxide to be loose and the appearance of holes, which will cause the subsequent process A defect occurs. Please refer to Fig.1, dig a deep ditch on the substrate 11 and make surface treatment on the surface of the ditch, backfill the gasification eyebrow 13 into the ditch, in the process of backfilling the odorous tetraethyl silane, if the gasification The deposition rate is not uniform, and a cavity A will be formed in the middle of the oxide eyebrow 13, and in the subsequent process, a depression B will be formed on the surface of the vaporized tantalum 13, making the isolation worse. Please refer to FIG. 2, which shows the top view of the ditch. After the deposition of thorium oxide 13, because of the sensitivity of ozone tetraethoxysilane to the underlying pattern, a cavity C will be generated at the edge of the ditch, making the structure of the gasification eyebrow 13 Get worse. 5 (please read the notes on the back before filling this page), τ
本纸張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） 經濟部中央樣準局員工消费合作杜印製 322618 五、發明説明（α) 改善這兩種現象的方法，是消除臭氣四乙氧基矽烷對底層圖 案的敏感度，使得氧化物在渠满表面的沉積速率一致，可以促使 氧化眉的結構更緊密。 本發明之主要目的是提供一種淺渠溝隔離技術，利用表面處 理方式，使得氧化物在渠溝表面的沉積速率一致，使氣化物能平 坦的填入渠溝。 本發明之次要目的是提供一種渠溝填充技術，使用表面處理 方式，可以消除臭氧四乙氣基矽烷對底眉圖案的敏感度，形成良 好的渠溝填入。 (一） 圖式說明： 圖一係顳示淺渠溝隔離之剖面圖，在氣化眉的中間會形成 凹洞，以及在m化層表面形成凹陷。 圖二係顯示淺渠溝隔離之頂視圔，在渠溝的邊緣會產生凹 洞。 圖三係顯示淺渠溝隔離之剖面示意圖，顯示在基板上形成 渠溝、墊氣化眉和氮化矽層的結構，在渠溝中填入氣 化眉作爲隔離之用。 圖四係顳示淺渠溝隔離之剖面圖，顯示氣化眉良好填入渠 溝的情形。 圖五係顯示淺渠溝隔離之頂視圖，顳示氧化層良好填入渠 溝的情形。 (二） 圖號說明： 11_基板 13-氧化眉 (請先閱讀背面之注意事項再填寫本頁.) 本紙張尺度適用中國國家橾準（CNS ) A4規格（210X297公釐） 經濟部中央樣準局貝工消费合作社印裝 A7 B7 五、發明説明（2)) 15-墊氣化眉 17-氮化矽層 19-表面處理眉 請參閱圖三，首先利用微影與蝕刻技術，在基板11之上形成 複數個渠溝。所使用的蝕刻技術是利用電漿蝕刻方法，可以運用 傳統的反應式活性離子蝕刻(reactive ion etching;RIE)或電子 迴旋共振電漿蝕刻（ECR)或磁場增強式反應式活性離子蝕刻 (MERIE)，反應氣髏是使用含氯氣體。 接著，在基板11與渠溝的表面形成一眉墊氣化層15(pad oxide)，形成的方法是熱氧化法(thermal oxidation)。 或者，使用熱氧化方法，先在基板11之上形成一層墊氣化 層，然後利用微影與蝕刻技術形成渠溝，再進行一次熱氣化方 法，在渠溝的表面形成一層熱氣化眉，該熱氧化雇是作爲絕緣之 用0 然後形成氮化矽眉17作爲停止眉（stop layer)之用，可以在 化學機械研磨製程中，當作研磨停止眉之用。 接著進行表面處理，以消弭臭氣四乙氣基矽烷(〇3-teos)對底 層圖案的敏感度。表面處理的方式是在渠溝與基板的表面，形成 一層氣化層，形成方法是使用電漿輔助化學氣相沉積法(PECVD)， 其厚度係介於500到1500埃之間，然後再對表面作氮氣電漿處理 (N2 plasma treatment)，處理時間係介於30到60秒之間0 最後，回填氧化物至渠溝中，形成絕緣之用的氧化眉13 °沉 積氧化眉13的方法是使用次大氣壓化學氣相沉積法 (sub-atmosphere chemical vapor deposit ion; SACVD)，沉積溫度係介 —.-------¢------IT------^ (請先聞讀背面之注意事項再填寫本頁) 本紙張尺度遑用中國國家搮準（CNS ) A4規格（210X297公釐） Α7 Β7 322618 五、發明説明（ m 於1000到1100°@間，沉積時間係介於0·5到2小時之間。 請參閱圖四，經過表面處理後的渠溝，回填氣化物至渠溝 中，在氧化屑13的中間與旁邊，不會形成凹洞與凹陷。 請參閱圖五，經過表面處理後的渠溝，在回填氣化物至渠溝 中，在渠溝旁邊的氧化眉13不會出現孔洞，氧化眉13的結構較爲 緊密。 由圖四及圖五可以知道，使用本發明的表面處理配方，對渠 溝表面進行表面處理，可以有效消除臭氧四乙氧基矽烷對底眉圖 案的敏感度，形成良好的渠溝填入。 本發明是透過具體實施例加以敘述，說明本發明的原則和精 神，應可瞭解本發明並不限於所揭露的具體實施例，因此，在本 發明之原則和範圔底下作細節上的變化，都應視爲本發明的進一 步實施例。 ί f ---κ---^-----^------.-IT------^ (請先聞讀背面之注意事項再填寫本頁) 經濟部中央揉準局另工消費合作社印装 本紙張纽適用中國國家棣準（CNS ) 21()><297公董）This paper scale is applicable to the Chinese National Standard (CNS) A4 (210X297mm). The Central Sample Bureau of the Ministry of Economic Affairs of the People ’s Republic of China Consumer Printing Co., Ltd. 322618 V. Invention Description (α) The method to improve these two phenomena is to eliminate the smell The sensitivity of gas tetraethoxysilane to the underlying pattern makes the deposition rate of oxide on the surface of the channel uniform, which can promote the structure of the oxide eyebrows to be closer. The main object of the present invention is to provide a shallow trench isolation technology that uses surface treatment to make the deposition rate of oxide on the surface of the trench uniform, so that the gasification can be smoothly filled into the trench. The secondary objective of the present invention is to provide a trench filling technique that uses surface treatment to eliminate the sensitivity of ozone tetraethyl silane to the bottom eyebrow pattern and form a good trench fill. (I) Schematics: Figure 1 is a temporal cross-sectional view showing the isolation of shallow trenches. A cavity will be formed in the middle of the vaporized eyebrow, and a depression will be formed on the surface of the mized layer. Figure 2 shows the top view of the isolation of a shallow ditch, and a cavity will be created at the edge of the ditch. Figure 3 shows a schematic cross-sectional view of shallow trench isolation, showing the structure of the trench, pad vaporization eyebrow, and silicon nitride layer formed on the substrate. The vaporization eyebrow is filled in the trench for isolation. Figure 4 is a temporal cross-sectional view showing the isolation of a shallow ditch, showing how the gasification eyebrow is well filled into the ditch. Figure 5 shows a top view of the isolation of a shallow ditch, showing the situation where the oxide layer is well filled into the ditch. (2) Description of drawing number: 11_substrate 13-oxidized eyebrow (please read the precautions on the back before filling in this page.) The paper size is applicable to China National Standard (CNS) A4 specification (210X297mm) Central sample of the Ministry of Economic Affairs Printed by ABS B7 of the Quasi-Bureau Consumer Cooperative. V. Description of the invention (2)) 15-pad gasification eyebrow 17-silicon nitride layer 19-surface treatment eyebrow Please refer to FIG. 3, first use lithography and etching technology 11 Form a plurality of ditches. The etching technique used is a plasma etching method, which can use traditional reactive ion etching (RIE) or electron cyclotron resonance plasma etching (ECR) or magnetic field enhanced reactive ion etching (MERIE) The reaction gas is using chlorine-containing gas. Next, a pad oxide layer 15 (pad oxide) is formed on the surface of the substrate 11 and the trench, and the formation method is thermal oxidation. Alternatively, using a thermal oxidation method, a pad vaporization layer is formed on the substrate 11 first, and then a trench is formed using photolithography and etching technology, and then a thermal vaporization method is performed to form a thermal vaporization eyebrow on the surface of the trench. The thermal oxidation is used for insulation 0 and then the silicon nitride eyebrow 17 is formed as a stop layer, which can be used as a grinding stop eyebrow in the chemical mechanical polishing process. Next, surface treatment is performed to eliminate the sensitivity of the odor of tetraethyl silane (〇3-teos) to the underlying pattern. The surface treatment method is to form a vaporized layer on the surface of the trench and the substrate. The formation method is to use plasma-assisted chemical vapor deposition (PECVD) with a thickness between 500 and 1500 angstroms. The surface is treated with N2 plasma treatment (N2 plasma treatment), the treatment time is between 30 and 60 seconds. Finally, backfill the oxide into the trench to form an oxide eyebrow 13 for insulation. The method for depositing the oxide eyebrow 13 is Using sub-atmosphere chemical vapor deposition (SACVD), the deposition temperature is ———————————— IT ------ ^ (please Read the precautions on the back first and then fill out this page) This paper uses the Chinese National Standard (CNS) A4 (210X297mm) Α7 Β7 322618 5. Description of the invention (m between 1000 and 1100 ° @, deposition time It is between 0.5 and 2 hours. Please refer to Figure 4. After the surface treatment of the trench, backfill the gasification into the trench, in the middle and side of the oxide debris 13, no recesses or depressions will be formed. Please refer to Figure 5. After the surface treatment of the ditch, backfill the gasification into the ditch, No holes appear in the oxide eyebrow 13 next to the ditch, and the structure of the oxide eyebrow 13 is relatively compact. It can be seen from FIGS. 4 and 5 that the surface treatment formula of the present invention can be used to surface treat the surface of the ditch to effectively eliminate ozone. The sensitivity of tetraethoxysilane to the bottom eyebrow pattern forms a good ditch fill. The present invention is described through specific embodiments to illustrate the principles and spirit of the present invention, it should be understood that the present invention is not limited to the disclosed Specific embodiments, therefore, changes in details under the principles and scope of the present invention should be regarded as further embodiments of the present invention. Ί f --- κ --- ^ ----- ^ --- ---.- IT ------ ^ (Please read the precautions on the back first and then fill out this page) Printed copy of this paper button applicable to China National Standard (CNS) 21 () > < 297 company director)