TW320782B - Chip LED and its production method - Google Patents

Abstract

A chip LED includes a chip with structure of LED, in which P-N junction is formed; a first pole formed on one chip surface relative to P-N junction of the chip; a secondary pole formed on another chip surface relative to P-N junction of the chip; a third pole formed on one side of the chip adjacent to P-N junction conducting with the first pole and disconnect with the secondary pole; a insulation layer formed between the third pole and P-N junction to prevent the third pole from contacting P-N junction directly.

Description

3SG7S2 A7 ________— _B7 by the consumer cooperation cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (1) The present invention relates to a light-emitting diode and its manufacturing method, in particular, it relates to a type of crystal-type light-emitting diode For the body and its manufacturing method, the front electrode and the negative electrode are located on the same crystal plane, which can be turned on at the same time during the solid crystal, without additional wiring. Please refer to FIG. 1. For a conventional light emitting diode, its positive and negative electrodes 10, U are located on different egg planes on both sides of the p_N interface 5 of the die, respectively. When the finished product is made, the grain is generally fixed on a fixed frame (LEAD FRAME) or a fixed point of the circuit board. After the silver glue is dried, the electrode is connected by wire bonding. In this way, the light-emitting diode side Has the ability to emit light. However, in the process of solid crystal bonding and wire bonding, improper handling often results in damage to the crystal grains and defects in the finished product, which affects the production yield, manufacturing politics and product life. In addition, this conventional wire bonding process also makes it impossible to reduce the distance between the die. The miniaturization and resolution of LED products, such as dot matrix (Dot Matnx) or flat panel display (Dlsplay), have produced progress. Hinder. In addition, the high price of wire bonding equipment is one of the main reasons for the high cost of LED products. / On the other hand, in order to comply with the integration with other components and electronic integrated circuit products, the importance of surface bonding technology (hereinafter referred to as SMD) for the light-emitting diode system is becoming increasingly urgent. At present, the smd production of light-emitting diodes (the smallest is more than 2mm) has become a major bottleneck in integrated development. In order to meet the needs of SMD, in conventional light-emitting diode products, the crystal grains are first fixed on a small carrier or carrier plate (Camei ·). The material of the referee can be ceramic or plastic polymer. There are two threats on the back of the back (2 丨 0X297mm) (please read the precautions on the back before filling in this page)-binding economy, printed by the Central Bureau of Precinct Beigong Consumer Cooperative 3S0782 A7 ______ B7 V. Invention Description (2) Separate the metal pole and the positive and negative electrode blades made by printed circuit technology on the front side. When the crystal is fixed on the appropriate electrode on the front side by solid crystal, then connect the crystal by wire bonding After the resin is sealed by resin, a separate light-emitting diode is formed, which is generally called Chlp LED. This kind of crystal-type light-emitting diode not only needs The traditional die-bonding wire bonding also requires special packaging tools and materials (Tape and Reel), which is probably very costly. Furthermore, due to the limitations of finished product design, such as printed circuits and wire bonding, the conventional die-type light-emitting diodes Although the size of the body is more general Light-emitting diodes have shrunk a lot, and still have their limits. It is usually difficult to be less than 1 mm. In application, the improvement of product resolution and the stability of the electrical properties of the grains are still difficult to have breakthrough effects. For this reason No wire bonding is required, the size is small, and the production of light-emitting diode crystals with SMD function is an urgent task. In view of this, the purpose of the present invention is to provide a crystal-type pre-diode and its production method, It is made of a single bare die (Bare chlp) and can be applied to various surface bonding technologies and processes. Another object of the present invention is to provide a die-type light emitting diode and a manufacturing method thereof, and its bonding surface With the positive and negative electrodes of the present invention, the circuit connection can be completed at the same time during the solid crystal, and the volume can be reduced, so it can be applied to high resolution, extremely slim display, and various complicated electronic optoelectronic components and pp design Among them, this is an effect that cannot be achieved by conventional light-emitting diodes and newer conventional crystal-type light-emitting diodes. In order to achieve the above purpose, the present invention uses the following method to produce a crystal-type light-emitting diode For the diode, please refer to Figure 2, which includes the following steps: (1) Step 20: First, an ohmic 4 (CNS) A4 «^ S- (210x1 is fabricated on an epitaxial wafer with a grown light-emitting diode structure ^^] ------ (please read the precautions on the back before filling in this page) -install · f '^ 0782' ^ 0782 five A7 B7, invention description (3 electrodes, (2) ㈣22 'then follow again Cut the required size into the side of the die; (3) Step 24, then make an absolute V on the side of the die to avoid direct contact between the electrode and the p_N interface of the light-emitting diode; ⑷; 26 'Next, make on the side of the die The conductive layer, so that the positive electrode is located on the same crystal plane Θ.g-, ⑴Step 28, and finally the insect chip is formed into an earlier grain. The traditional egg-shaped light-emitting diode is finished after the fabrication of the front and back electrodes, and then cut and tested. The feature of the manufacturing method of the present invention is that the present invention further utilizes the following steps to destroy and guide the circuit on the side of the die: (1) forming the side of the die to provide the official way that the front electrode extends to the back. The crystal plane can be single, double or four sides of the crystal grain, and its depth is at least greater than the thickness of the PN interface, and the maximum is the thickness seen through the entire crystal. The method of forming the sides of the crystal grains may be various methods such as chemical etching, mechanical cutting, laser penetration, gas phase, or chemical reaction. ⑺An insulating layer is formed on the side of the die to rely on isolating the p_N interface, so as not to be affected by the conductive layer made later. The material of this insulating layer can use oxides (such as SiO2), nitrides (such as SlsN4), as well as high molecular polymers (such as p〇lyimide) and all materials with insulating properties. Of course, the selected material must have good adhesion strength to the surface layer and conductive layer on the grain side. At the same time, it must have good light transmission and moisture resistance, corrosion resistance and other characteristics. Its range is consistent with the degree of side exposure to achieve the purpose of covering the P_N interface. With the formation technology of the insulating layer, it is generally functional from hundreds of angstroms to about 100 microns. As for the method of forming this insulating layer, there are spin coating method (Spin Coatmg), spray coating method (Spray Coatmg), chemical vapor deposition method (CVD), thermal evaporation -------- ---- Installation — Please read the notes on the back of 1 # first and then fill out this page j -55 Printed line of the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs ----- 4, this paper scale is applicable to the Chinese National Standard (CNS ) A4 specification (210x '^^ J'y A7 B7 Printed by Beigong Consumer Cooperative of Central Standard Falcon Bureau of the Ministry of Economic Affairs V. Invention Description (4) Method (Thermal Coating), and E-Gun Sputtering) Technology. (3) Form a conductive layer on the side of the crystal grain so that the positive and negative electrodes originally located on different crystal planes can exist on the same crystal plane or adjacent crystal planes through the conductive layer, so that the two electrodes are solidified It can be connected at the same time without additional wiring. In addition to being conductive, the material of the conductive layer is preferably thin (for example, less than 1 μm), well-proportioned, and good in light transmittance; in addition, its adhesion to the insulating layer and phase Capacitance, as well as the wear resistance, corrosion resistance and stability to heat and moisture of the material also need to be noted. Of course The impact of the working environment of the conductive layer on the photoelectric characteristics of the crystal grains can not be ignored. The material of this conductive layer can be metal (such as gold, silver, copper, aluminum, nickel, etc.), oxide (such as indium oxide, oxide Tin, indium tin oxide), non-oxides (such as silicon nitride) or conductive polymer compounds. As for the production method can be plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition), physical vapor deposition ( Physical Vapor Deposition, Thermal Coating, Electron-Gun Sputtering, Electroplating, Spraying, and Electroless Plating, etc. by the above It can be seen that the focus of the present invention is to make the positive and negative electrodes on the top and the bottom of the conventional light-emitting diode grains by the conductive layer on the side of the grain, and simultaneously make the positive and negative electrodes on the same crystal surface to become A new type of light-emitting diode with double electrodes on the same crystal surface. In application, solid crystal is formed on the bracket or printed circuit board to form a channel, which is more popular The light-emitting diode die still needs to use a gold wire to form a passage, which simplifies the working process and has the advantage of saving materials and labor. (Please read the precautions on the back before filling this page). Binding paper size Applicable to China National Standard (CNS) A4 specification (210X; 297mm) 3 ^ 〇782 A7 B7 Fifth Central Economic Bureau of the Ministry of Economic Affairs Staff Consumer Cooperative Printed 'Invention Description (5) In addition to the characteristics of the aforementioned production steps, it still needs Consider the technique of grain splitting and wrapping. When the vertical crystal grain is divided into grains, it is necessary to avoid damaging the conductive layer on the side surface. The division method can be cut and separated by a chipping machine or a general light emitting diode a-day grain cutter. The packaging method is different depending on the upright type and side trans type. The former can use the traditional light-emitting diode packaging method, and the latter needs to lie horizontally before packaging to adapt to the subsequent solid crystal movement. Using the above manufacturing method, the present invention can produce two different types of grain-type light-emitting diodes, one is an upright grain-type light-emitting diode (Free-Standmg Clup LED), which is implanted in the grain At this time, the direction is perpendicular to the PN interface; the other is a side-type grain-type LED (Side-Lying Chip LED) 'whose grain implantation direction is parallel to the p_N interface. Both of these two die-type light emitting diodes are made with conduction circuits on the sides of the die, so that the positive and negative electrodes can be located on the same solid crystal surface. Between the two electrodes, there is no general path and T, and the separation of the two electrodes on the solid crystal surface needs to be more than three degrees of solid surface. After using the surface bonding technology to fix the die in this way, the circuit connection can be automatically completed. The following is a description of preferred embodiments of the present invention with reference to the accompanying drawings, in order to more clearly illustrate the architecture, manufacturing method, and features of the present invention. FIG. 1 is a schematic diagram of a conventional light-emitting diode architecture; FIG. 2 is a flowchart for explaining the manufacturing method of the present invention; FIG. 3 is a diagram showing the structure of a preferred embodiment of the grain-type light emitting diode of the present invention; FIGS. 4a to 4d The figure shows the subdivision of the grain-type light emitting diode of the present invention (please read the precautions on the back before filling this page).

、 1T line private paper standard is applicable to China National Standard (CNS) A4 regulation phase • 1 ^ 1 —1- -1 · Printed by the employee consumer cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 -----____ B7_ V. Description of invention (6) -A diagram of the architecture of another preferred embodiment; circle 5 is a diagram of the modified architecture of the architecture of FIG. 3; and FIG. 6 is a modified architecture of the architecture of FIG. 4d Scheme. In the above drawings, the same reference numerals are used to refer to the same elements or structures. Description of the preferred embodiment: = Please refer to FIG. 3, which shows the structure of a vertical light-emitting diode on one side. As for its manufacturing method, it includes the following steps: (1) A remote structure with a light-emitting diode structure will be grown After the wafers are properly cleaned, according to their "n properties", use a thermal evaporation machine (Thermal Coater) to form an alloy metal that can form ohmic contacts (for example, Au_Be for P surface and Au_Ge for N surface), respectively, to the front and back On the top, re-anneal to form the front electrode 30 and the back electrode of the ohmic contact. The temperature, time and alloy thickness can be in accordance with traditional parameters; ⑺ Then according to the thickness of the p_N interface layer 5, use a cutter to cut out the required thickness or about 10. 〇 Micron (^ m), and the width is about twice the thickness of the cutter; (3) After cutting, the cutting surface is acid etched to remove the cutting defects, and the side of the wafer can be covered with insulating material to generate The insulating layer 35 is on the side of the die (ie, the cut surface); (4) After that, the front electrode 30 is made through the side conductive layer 30a, so that the front electrode 30 and the side electrode 30a are connected; (5) Finally, cutting The knife cuts through the grain Vertical grain-type light-emitting diode. Please refer to FIG. 3 again, another manufacturing method of the side vertical grain-type light-emitting diode includes the following steps: (1) a structure with a light-emitting diode structure will be grown After the wafers are cleaned by the appropriate wafers, according to their p and N properties, the alloy metal that can form the ohmic contact layer is plated on the front and back sides with a hot vapor deposition machine, and 8 (please read the precautions on the back side before filling in This page)-installed-

, 1T line paper from the applicable national standard (CNS) 21GX297 public envy) __ A7 ----- B7 V. Description of the invention (7) ------- Please read the details before filling in this page 2 Photographic development of the yellow light chamber technology produces regional electrodes, and then annealed to form the ohmic contact front electrode 3 {) and back electrode 3. The yellow light chamber development technology cooperates with chemical etching technology to open the platform on the front of the die ( Mesa), the groove width around the platform is about twice the width of the cutting blade (center to 50μιη), and the depth is slightly greater than the p_N interface layer $ deep production or ⑽; (3) using chemical vapor deposition technology On the front surface of the wafer is coated with a layer of emulsified silicon (Sl3N4) 35, but the front electrode 30 is exposed, and then a conductive and transparent oxide layer 3Qa, such as an oxidized domain, is plated in a cheap way; ⑷ last The cutting blade cuts through the crystal grains to form a vertical grain-type light emitting diode on one side. Please refer to Figures 4a to 4d for the printing and printing of the employee consumer cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. Next, the manufacturing method of the vertical grain-type light-emitting diode will be described, which includes the following steps: (1) as shown in the first figure , To provide an epitaxial wafer 40 fabricated with a light-emitting diode structure, which includes a P-type region, an N-type region, and a P_N interface 42 with a thickness of 200 ± 50μπι. After properly cleaning its front and back surfaces, it is plated first — = Nitride chips with a thickness of about several hundred angstroms to several thousand angstroms 44; ⑺As shown in Figure 4b, using the yellow light chamber development technology and chemical etching technology, a plurality of diameters of about ISO to 200 are opened on the wafer Micrometer penetrating round hole 46; (3) then spin-coated glass (SPm-〇n Glass) coated on the surface of the round hole as an insulating layer 48, and then through the photoresist treatment, open the front and back electrode area , As shown in the figure; (4) plating a layer of gold in the aforementioned electrode area, and annealed to form a front electrode 50 and a negative electrode 52 with ohmic contact, and a conductive layer 50a is formed on the insulating layer 4 [ ; (5) Please refer to Figure 4d, the worm chip is divided into independent according to the relative position of the round hole 46 Tablets' completes the vertical type light emitting die 9

A7

Printed by the Consumer Consortium of the Central Falcon Bureau of the Ministry of Economic Affairs 5. Description of the invention (8 diodes. The grain-shaped light-emitting diodes produced by the method of the previous fan I are mainly grains with a light-emitting diode structure; 1 The front electrode is formed on the front surface of the "-back electrode", which is formed on the back surface of the die; a side electrode is formed on the side of the squat, ^ \, and egg 釭 < next to the PN interface , And the front electrode is conductive, but not the back electrode; and an insulating layer is formed between the side electrode and the P_N interface to prevent the side electrode from directly contacting the p_N interface. With the side vertical or upright The application of the formula is different. It can be formed as shown in Figure 3 or Figure 4. That is to say, for the contralateral vertical solar-type light-emitting diode, the formed side electrode does not cover the entire side. For the vertical grain-type light emitting body: for the polar body, the formed back electrode does not cover the entire back surface of the grain. As for the fabrication, the lateral vertical grain-type light emitting diode can be cut or formed to the depth of the platform To control The position where the surface electrode is formed, and the vertical grain-type light emitting diode can be used after the formation of the θ surface electrode, and then the yellow light chamber development technology and the etching technology are used to form the desired back electrode. In addition, with different solid crystal methods, The grain-type light-emitting diode of the present invention can also be formed as shown in Figure 5 and Figure 6. The opposite vertical grain-type light-emitting diode and Lu 'can make the back electrode include-extend to the same as the side electrode The electrode 31a on the side, and for the vertical grain type light emitting diode, the front electrode can include an electrode 50b extending on the back side of the grain. For the polar body, the required grooves can be cut in advance on the back side of the die with a dicing knife. For the upright grain type light-emitting diode, the yellow light chamber development technology can be used in conjunction with the remaining technology. Please read the precautions on the back before filling in this page). Installation,-'° line

.—. 1 I- I This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297). The Central Standards Bureau of the Ministry of Economic Affairs has printed and printed the A7 B7 in cooperation with consumers. V. Description of the invention (9) .

ti IX ----- .--- installed ----- ordered (please read the precautions on the back before filling in this page) The size of the line paper is suitable for China National Standard (CNS) A4 specification (210X297mm )

Claims (1)

3 ^ 0782 6. Patent application 1. The surface;-Seed-type light emitting dichroic body, including: a crystal with a light-emitting dichroic body structure, in which a second electrode formed on the ρ_Ν interface ⑽㈣ interface is formed on The relative of the crystal grains. _N The other third electrode of the interface is formed on the crystal face of the grain; the interface is: formed on the side of the grain, tightly connected with the PN; and with (the electrode conduction) and the aforementioned first Two-electrode non-conductive I II I Note I -II 丨 Buying-insulating viewing is formed in the aforementioned third avoiding direct contact between the third electrode and the interface. versus. · N interface ^, the former ^ such as the patented model of the first paragraph of the grain-type light-emitting diode, in which, the two sides: the electrode system covers the entire crystal plane 'and the third electrode is covered-3 as please The n-th crystallite light-emitting diode of the patent scope, wherein: the second electrode covers part of the crystal plane, and the third electrode has the entire side surface. -Γ Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs ^ 'If the crystal-type light-emitting diode of claim 2 is claimed, the second electrode further includes the same crystal plane as the third electrode Electrode. 5. The grain-type light-emitting diode according to item 3 of the Shenzhou Patent, wherein the second electrode further includes an electrode extending to the same crystal plane as the second electrode. 6. The grain-type light-emitting diode as claimed in item 2 or item 3 of the patent scope, wherein the aforementioned insulating layer may be an oxide, nitride or polymer polymer. This paper is from China National Sample Rate (CNS) Μ 秘 （21GX297mm） Printed by the Ministry of Economic Affairs of the Central Bureau of Accreditation and Consumer Cooperatives of the 7th patent application of the second or third grain-type light-emitting diodes, wherein the first electrode and the second electrode are alloy metals that can form ohmic contacts . 8. The grain-type light-emitting diode as claimed in item 6 of the patent scope, wherein the thickness of the insulating layer may be 100 angstroms to 100 microns. 9—A manufacturing method of grain-type light-emitting diodes, including the following steps: (1) Provide an epitaxial wafer with a light-emitting diode structure, and plate the metal on the front and back of the epitaxial wafer respectively, and then anneal to generate Front electrode and back electrode; (11) According to the depth of the P_N interface layer, use a dicing knife to cut the required depth and width on the epitaxial wafer; (in) acid etch the cut surface to remove the cutting defects. The cutting surface is covered with an insulating substance to generate an insulating layer on the side of the cut grain; (iv) A conductive layer is formed on the side of the grain, and the front electrode, the first electrode and the side conductive layer are made Connectivity; (v) Cutting the epitaxial wafer to form a die-type light emitting diode. 10. The manufacturing method as described in item 9 of the patent application, wherein the front electrode may be a gold-wrinkle alloy, and the back electrode may be a gold-germanium alloy. 11. The manufacturing method as claimed in item 9 of the patent scope, in which the cutting depth in the previous step needs to be greater than the depth of the P-N interface layer, and the width is about twice the thickness of the cutting blade. (Please read the precautions on the back first and then fill out this page)-Install this paper Slave Wealth Guan Jia Pi (CNS) Λ4 Secret U10X297mm) Patent application scope 12. The manufacturing method as described in item 9 of the patent application scope, wherein the method of removing cutting defects in the aforementioned step (ill) can use a mixed solution of sulfuric acid and hydrogen peroxide to etch the cut surface. Steps: 13. The production method of 8 kinds of grain-shaped light-emitting diodes, including the following steps: Printed by the Ministry of Economic Affairs, Central Bureau of Standards and Technology, Beigong Consumer Cooperative (^) to provide an epitaxial wafer with a light-emitting diode structure, and the metal Plated on the front and back of the flake film, and then annealed to form the front electrode and the back electrode; (ii) open the platform on the front of the die; (m) plate an insulating layer on the side of the wafer and expose the front electrode Now, a conductive layer is plated again, and the conductive layer is connected to the front electrode; (iv) The remote wafer is cut to form a grain-type light emitting diode. 14. The manufacturing method according to item 13 of the patent application (iv), wherein the formation of the platform in the aforementioned step ⑻ uses yellow light chamber development technology in combination with lithography technology. 15. The manufacturing method as claimed in item 13 of the patent application scope, wherein the 'insulation (iv) formation in the aforementioned step (m) is an audio vapor deposition technique. 16- The manufacturing method according to item 13 of the patent application range, wherein the formation of the 'conductivity | in the aforementioned step (m) is by sputtering. 17. The manufacturing method as claimed in item 丨 3 of the patent application, wherein the aforementioned “the width of the groove around the platform is about 30 ° to φ, and the depth” is the depth of the two P_N interface layers or about] 〇〇 pottery. 18. The manufacturing method as claimed in item _ item 13, wherein the aforementioned insulating layer may be silicon nitride. . ^ --- 1 — (Please read the precautions on the back before filling this page), va line 14 320782 Patent application scope 19. The manufacturing method as claimed in item 13 of the patent application scope, wherein the aforementioned conductive layer may be indium tin oxide. , * Qiao Step 20—The manufacturing method of a grain-type light-emitting diode, including the following steps: Printed by Beigong Consumer Cooperative of Central Bureau of Standards of the Ministry of Economy ⑴Provide an epitaxial chip with a light-emitting diode structure, and Yu Lei A protective layer is coated on the front and back of the wafer;, 09 (ii) Then a plurality of through holes are formed on the wafer; (π〇 Then an insulating layer is formed on the surface of the through holes, and then processed to open the front and back Electrode area; place (iv) plated on the aforementioned electrode area-metal wide, and annealed to form an ohmic contact of the front electrode and the face electrode, and at the same time form an electrical layer on the insulation; (V) opposite through holes The remote wafer is divided into independent crystal grains to complete the vertical grain-type light-emitting diode. The manufacturing method as described in item 20 of the patent application range, wherein the thickness of the aforementioned insect daily film is about 100μηι Up to 300μπι .. Guang 22_ as the manufacturing method of patent application item 20, wherein the thickness of the aforementioned silicon nitride is about 100 angstroms to 1 micron. 23. As the manufacturing method of patent application item 20, wherein the aforementioned The through hole is a through hole And its diameter is about ⑽Magic_micron. Μ 24. The manufacturing method as claimed in item 20 of the patent scope, wherein the formation of the aforementioned through-hole is developed using yellow light chamber development technology in conjunction with the chemical technology technology to 25. Such as applying for a patent The production method of item 20 in the scope, in which the aforementioned insulating IT is formed by spin-coated glass coating. ^ 15 This paper (please read the precautions on the back before filling out this page) Binding-Binding Line • ·-ABCD 、 Patent application 26. If the patent application scope, the protective layer can be silicon nitride. 27. As the patent application scope: The thickness of silicon nitride is about 500 angstroms to. Nuclear, of which the aforementioned 3000 Angstroms. (Please read the precautions on the back before filling in this page) · "Order-Line 16 printed by the Ministry of Economic Affairs Central Standards Bureau Beigong Consumer Cooperative Co., Ltd. using the Chinese National Standard Rate (CNS ) A4 specification (210 X 297 mm)