TW320737B

TW320737B -

Info

Publication number: TW320737B
Application number: TW086104028A
Authority: TW
Original assignee: Toshiba Co Ltd
Priority date: 1996-03-29
Filing date: 1997-03-28
Publication date: 1997-11-21
Also published as: JPH09270446A; KR100243826B1; KR970067751A; CN1167335A; US5936420A; CN1087101C

Description

經濟部中央標準局貝工消费合作社印製 A7 B7 五、發明説明（1) 〔發明之詳細說明〕〔發明所靥之技術領域〕本發明是有關半導體晶圃的半導體檢査裝置，尤其是關於可進行重覆配列有製品晶片與T E G晶片之半導體晶圃上所配列半導體晶片的導電特性等檢査用之探測器裝置等的半導體檢査裝置。〔習知技術〕在半導體晶圓上複數個重覆配列有形成製品的製品晶片。該等製品晶片是利用1次的照射使每一個製品晶片或每複數個製品晶片予以曝光後加以製造。又，製品晶片在每移動半導體晶圓後重覆使之曝光後可製造半導體晶圓的全面。 · 製品晶片在製造後的半導體晶圚上利用各個半導體檢査裝置接受全數的檢査。對於預定檢査項目之良否的檢査結果將每一製品晶片加以記錄。針對使用習知之晶圃探測裝置的半導體晶圖的檢査手法說明如下。圖4是表示橫向晶片尺寸a 、縱向晶片尺寸b的製品晶片A、B，圖7是表示配列有製品晶片A、B的半導體晶圓1。在此，製品晶片A與製品晶片B是利用一次喱印照射而曬印在半導體晶圓上。製品晶片A、B爲不同的製品晶片，但是具有同樣的晶片尺寸a、b，在檢査上是爲同等的製品晶片。_ 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）一 4 一 (請先閲讀背面之注意事項再填寫本頁) 装. 訂 320737 at B7 五、發明説明（2) 圖1是表示習知載置台控制手段的構成方塊圖。圖1中，在X索引暫存部3 1與y索引暫存部3 2上暫存有圖4表示之製品晶片A、B的橫向晶片尺寸a及縱向的晶片尺寸b。同時在測定指令部3 3上暫存有可同時檢査製品晶片之製品晶片的個數（圖7中爲2個）與配置〇乂/丫控制部34是根據乂索引暫存部31、7索引暫存部3 2及從同時測定指令部3 3所輸入的數據產生使夾緊載置台2移動控制用的移控制信號，將此一移動控制信號输出至X電動機驅動部3 5與Y電動機驅動部3 6。 X電動機驅動部3 5與Y電動機驅動部3 6可根據此一移動控制信號移動控制夾緊載置台2。夾緊載置台2上設定有可移動之最大移動距離。而必須在此最大移動距離的範圍內將製品晶片重覆配列在半導體晶圓1上。經濟部中央標準局只工消费合作杜印製 (請先閲讀背面之注意事項再填寫本頁) XADDR部3 8與YADDR部3 9是指示將作爲夾緊載置台2之X軸方向與y軸方向之移動單位的索引單位而累加於X/Y控制部3 4內。其結果，如圖7所示在各製品晶片上是以X軸爲橫軸而提供a X 1〜a X 6之座標值，且以y軸爲縱軸而提供 a y 1〜a y 6之座標值。夾緊載置台2的可移動領域被分割成索引單位的格子模樣，將各晶片藉著提供該等格子的X座標值與y座標值而加以分配。進行整列使夾緊載置台2的移動方向與半導體晶圓1 本紙悵尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -5 - 經濟部中央標準局只工消费合作社印掣 A7 B7 五、發明説明（3 ) 之格子模樣的配列方向一致。圖1 0是在該整列之後，進行適當分佈之製品晶片7 1〜7 5的5個晶片是否全部具有相同索引單位的檢査。藉此，完成X軸及y軸的對齊與晶片尺寸的確認。此外，製品晶片7 2與其他4個製品晶片71 、73、74、75的4個晶片在照射上雖形成不同的製品晶片A ’但是由於是與製品晶片B相同而可以毫無問題地予以對齊。圖12是表示對齊完成後的夾緊載置台2的移動例圖。夾緊載置台2可以製品52爲起點（1)而自（2)( (3)·.,(14)(15)(16)以至最終晶片爲止爲1晶片尺寸而予以正確地移動控制。該移動控制是利用XADDR部3 8與YADDR部3 9而對應上述移動控制方向以累加指示·晶片尺寸單位a、b進行。各製品晶片的座標是從製品晶片5 1的X : . a X 3、 Y : ayl至製品晶片52的X: ax4、Y: ayl在 X軸方向移動1個時，會使X座標產生1索引的單位變化。同樣地在y軸方向移動1個時，會使Y座標產生1索引的單位變化》各製品晶片在探測器檢査位置的每一移動時進行導電測定。將此導電測定的結果（良品/不良品）連結在各製品晶片的座檫上而保管於暫存器等之中。在同時測定複數個製品時，進行如下。圖1 4是表示同時測定2個製品晶片之動作例圈。在配列有2個探測器的狀態下移動，可同時測定2個製品晶本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂經濟部中央標準局只工消费合作社印製 A7 B7 五、發明説明（4 ) 片52、5 3等的導電特性•載置台的移動是以製品晶片 52爲起點（1)而移動至其次的製品晶片54(2)。在XADDR部3 8與YADDR部3 9中形成僅分別暫存有1個量的座標值。同時從測定指令部3 3的資訊相對分配其他的晶片座檫。圖1 4表示之例爲同時在測定指令部3 3上同時測定相對於基準位置之製品晶片的個數爲2個’將同時測定之其他晶片暫存於右側的位置。 X/Y控制部3 4 —旦接受同時測定指令部3 3的指令時，以一組同時測定個數（圖1 4中爲2個）而以組單位進行夾緊載置台2的移動控制。此時是以2個爲1組。測定結果是與每1個測定的場合相同與各晶片座標連接而保持在暫存器等之內。圇1 6爲表示X軸方向2個、y軸方向3個共計6個製品晶片同時測定時之夾緊載置台的移動例圓。以此時的基準晶片爲5 2 ( 1 3 2 )—旦同時側定而予暫存時，在實際上未形成製品晶片的格子領域1 3 1、 1 3 3內同樣會使載置台移動。此時，當然XADDR部 3 8或YADDR部3 9是表示未形成製品晶片的格子領域131、133的座標。以所設定的座標爲基準而將其他5個晶片分配在各別的座標內是與2個同時測定時相同。將與每測定1個時相同之測定結果的資訊與晶片座標連接而保持在暫存器等· 本紙浓尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ----rl-llt 装------訂------f (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局只工消费合作社印聚 320737 Α7 Β7 五、發明説明（5 ) 圖15爲y軸1列之6個同時測定的場合。基本上是與上述每1個、2個、2 X 3個測定時相同，因此可省略其具體說明。圖2 0是表示在導電測定完成後，相對於不良品予以暫存的製品晶片檫示不良印（墨等）的動作例圖。完成最終晶片的測定時，探測器保依不良晶片資訊暫存的順序而標以印記（墨水等）。不良晶片爲171 、 172、173、174的4個晶片時，依照（1) (2 )(3)(4)的順序移動而標示印記（墨水等）》圖2 2是表示移動控制夾緊載置台2用之習知的流程例圖。一但判斷出朝著其次晶片移動時可決定數個晶片的移動量。首先，爲使夾緊·載置台2移動而從〔A〕開始進行。在ST1 〇中如不是行中最後的晶片時，在ST1 1中以行爲1索引（1個晶片）量移動〔B〕完成副程式。行的最後晶片時，於ST 1 2中進行列的判斷，如爲列的最後時，則判斷爲最後的晶片而不使之移動在〔C〕完成副程式。 ST 1 2中如不是列的最後時，在ST 1 3中移動至. 其次的晶片，同時載入行移動之資訊η，於ST1 4中將列移動1索引量的同時使行移動η索引。並且移動方向是與現在爲止的方向相反而重覆進行上述相同的動作。在此完成移動而以〔Β〕完成副程式。本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ----1JA f, (請先閲讀背面之注意事項再填寫本頁) 訂 -8 - A7 B7 經濟部中央標準局只工消费合作社印犁五、發明説明 ( 6 ) 1 1 [ 發明所欲解決之問題 1 1 I 另一方面 t 在半導體晶圓上爲了調査晶片製造工程等 1 1 的良否等即除了製品晶片之外配列有 T E G 晶片的場合 -V 1 I 請 1 I 0 T E G 晶片 9 尤其是新製品晶片的生產技術在充份確立先閲 1 I 1 I 爲止的開發初期中可發揮重要的功能〇背面 1 1 之 T E G 晶片在製造晶片時每 — 次的照射中必須形成在 ·/王意重 1 半導體的晶圓上〇 Ψ 項再填圖 5 是表示以同之照射使 1 個製品晶片 A 興 1 個寫本 1 T E G 晶片加熱而配列之例圖 0 製品晶片 A 的横向寬幅爲頁 1 1 I a T E G 晶片 T 的憤向寬度爲 C 與 a 形成不同值 0 1 1 以往如圖 5 所示丁 E G 晶片 T 必須與製品晶片 1 對 1 I 1 配列〇訂 1 上述的理由爲習-知之晶圊探測裝置中只可以單一索 1 1 引的單位移動控制夾緊載置台 2 0 在習知中當 T Ε G 晶 1 1 片 T 與製品晶片 1 對 1 而鄰接時或者僅只以同一壓製形 1 4 成 1 個製品晶片與 1 個 T E G 晶片時可檢査製品晶片〇 Γ 如上述 t 以往如圖 5 表示之 T E G 晶片必須與製品晶 1 片 A 1 對 1 配列 » 因此多數的 T E G 晶便係形成半導體 hLSw 晶 1 * I 圓〇 1 並且 9 如圖 6 所示複數個製品晶片 A 與 1 個 Τ E G 1 1 I 晶片 T 是以相同的壓製而形成時並不能利用習知的晶圆 1 1 1 探測裝置進行檢査 0 1 1 多數配設 T E G 晶片爲當新製品晶片的生產技術 .充份 1 1 確立之後 f 因此在半導體晶圆的有限範圍內會有形成之製 1 1 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公釐）經濟部中央標準局負Η消費合作社印製 A7 B7 五、發明説明（7 ) 品晶片的個數少等問題。例如’如圓5所示與圖6所示比較時，必須要有TE G晶片T兩個量的面稹，又形成預定數的製品晶片所須要的壓製數爲2倍。近年來，製品晶片的大小有逐渐增大的傾向’而在晶圓的有效面積內儘可能確保較大之製品晶片用的領域而儘可能地減小T E G晶片的占有面稹的必要性提髙。又，在以往如圖9所示形成TEG晶片6 4時’與圖 7所示未形成T E G晶片時比較，由於在半導體晶圓1上增加了壓製的面積而減少了形成製品晶片5 2、5 3的個數。例如，圖7與圖9比較時，產生4晶片的個數差。而由於在一片半導體晶圊上減少了製品晶片的晶片數’因此爲了製造預定數的製品晶片所須要的半導體晶圓的片數必須隨著增加。此外，.T E G晶片6 4也並非全部有效而不能獲得左右端的資訊，以致會產生解析時的問題。爲解決上述之問題，在同一切片上形成如圖6所示之複數個製品晶片A與1個TE G晶片T，將設置TE G晶片之面稹的增加抑制在必要的最小限，同時晶圓探測裝置本身必須是可檢査圖6表示所形成的製品晶片。圖6是將2個製品晶片A與1個TEG晶片T爲1單位組，而以1照射形成該1單位組之例示圖，1照射之X 方向的尺寸爲a + a + c的尺寸時的照射圖。相對於2個製品晶片，將TEG晶片所須的尺寸減少至1/2。又，如以1次照射形成m個製品晶片與1個 TEG晶片時，可將TEG晶片所須的尺寸減少爲1/m 本紙张尺度適用中國國家標準（CNs )八4坑格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 _ 10 - 經濟部中央標準局工消费合作杜印製 A7 B7_ 五、發明説明（8 ) 〇如上述本發明之目的爲提供可解除上述習知技術所具有的問題，且複數個製品晶片及1個TE G晶片爲可檢査以同一照射所形成半導體裝置的半導體檢査裝置。〔解決問題的手段〕爲達成上述之目的，本發明之半導體裝置係將重覆配列有可檢査形成製品之製品晶片與特性用T E G晶片的半導體晶圓載置於載置台上，移動掃描上述載置台而使用探測器檢査上述每一製品晶片的良否，同時將檢査結果的印記檫示在上述製品晶片之半導體檢査裝置中，其特徵爲，具備：於上述半導體上重覆配列藉同一照射形成複數個製品晶片及1個T E G.晶片所成的單位組，以上述單位組的長度單位、上述製品晶片的長度單位、上述T E G晶片的長度單位、或者組合該等組合的長度所形成組合長度單位中任意的長度單位作爲上述載置台的移動單位而設定並控制上述載置台的載置台控制手段。〔發明之實施形態〕參閱圖示說明本發明半導體檢査裝置之實施形態如下〇圖3是表示半導體檢査裝置之晶圓探測裝置之一般構方塊圖。夾緊載置台2上所保持之半導體晶圆1上配列有製品晶片及T E G晶片•製品晶片與T E G晶片係如圚6 本紙張尺度適用中國囤家標準（CNS ) A4規格（210X297公釐） (祷先閲讀背面之注$項再填寫本頁) 策. 訂 -11 - 經濟部中央標準局貝工消費合作社印製 A7 B7 五、發明説明（9 ) 所示重覆形成2個TEG晶片A及1個丁EG晶片T所成的單位組。夾緊載置台2是利用載置台控制手段4予以移動控制。探測器3是利用探測控制手段5加以控制，而檢査朝著探測器3下方移動而來之製品晶片的導電性質等。載置台控制手段4與探測器控制手段5是以檢査控制手段6予以控制，且根據探測器3的檢査結果等而藉檢査控制手段6 予以記錄管理。圖3是表示本實施形態之載置台控制手段4的構成方塊圖。圖2表示之載置台控制手段4與圖1表示時比較重新設置XTEG部4 1與YTEG部4 2與TEG部4 3 〇圖6中，以a 、. b作爲製品晶片A的尺寸，以b、c 作爲TE G晶片T的晶片尺寸，製品晶片A與T E G晶片 T在X軸方向或y軸方向的任一方向的尺寸相同。以T E G晶片T的X軸方向的晶片尺寸c作爲索引而供應至XTEG部41，以TEG晶片T的y軸方向的晶片尺寸b作爲索引而供應至YTEG部42 ，XTEG部 4 1與YTEG部4 2是根據該等資訊而指示於Χ/γ控制部3 4。 TEG部4 3是將TEG晶片相關之資訊作爲TEG 參數而對X/Y控制部3 4發出指示。X/Y控制部3 4 係根據T E G部4 3等的指示，運算出夾緊載置台2的整列或基本移動控制所須要的索引量· 本紙張尺度適用中國國家標準（CNS ) A4规格（210X297公釐) ' -12 - (請先閲讀背面之注意事項再填寫本頁) ,衣，A7 B7 printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Description of the invention (1) [Detailed description of the invention] [Technical field of the invention] The present invention is a semiconductor inspection device related to a semiconductor crystal nursery, especially regarding A semiconductor inspection device such as a detector device for repeatedly inspecting the conductivity characteristics of the semiconductor wafers arranged on the semiconductor wafer on which the product wafers and the TEG wafers are arranged. [Conventional Technology] A plurality of product wafers on which a product is formed is repeatedly arranged on a semiconductor wafer. The product wafers are manufactured by exposing each product wafer or product wafers with a single irradiation. In addition, the product wafer can be manufactured all over the semiconductor wafer after the semiconductor wafer is moved and repeated to expose it. · Product wafers are fully inspected by the semiconductor inspection devices on the semiconductor wafers after manufacture. The inspection results of the quality of the predetermined inspection items are recorded for each product wafer. The inspection method for the semiconductor crystal pattern using the conventional crystal garden detection device is explained as follows. Fig. 4 shows product wafers A and B showing a horizontal wafer size a and a vertical wafer size b, and Fig. 7 shows a semiconductor wafer 1 in which product wafers A and B are arranged. Here, the product wafer A and the product wafer B are printed on the semiconductor wafer with one-time irradiating. The product wafers A and B are different product wafers, but have the same wafer sizes a and b, and are the same product wafers in inspection. _ This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) One 4 one (please read the precautions on the back before filling in this page) Binding. Order 320737 at B7 5. Description of the invention (2) Figure 1 is A block diagram showing the structure of a conventional mounting table control means. In FIG. 1, the horizontal wafer size a and the vertical wafer size b of the product wafers A and B shown in FIG. 4 are temporarily stored in the X index temporary storage section 31 and the y index temporary storage section 3 2. At the same time, the number of product wafers (two in FIG. 7) and the configuration of the product wafers that can simultaneously inspect the product wafers are temporarily stored on the measurement command section 33. The X / Y control section 34 is based on the X index temporary storage sections 31, 7 index The temporary storage unit 3 2 and the data input from the simultaneous measurement command unit 3 3 generate a movement control signal for controlling the movement of the clamping stage 2, and output this movement control signal to the X motor drive unit 35 and the Y motor drive Department 3 6. The X motor drive unit 35 and the Y motor drive unit 36 can move and control the clamping stage 2 based on this movement control signal. The maximum movable distance that can be moved is set on the clamping table 2. The product wafer must be re-arranged on the semiconductor wafer 1 within this maximum movement distance. The Central Bureau of Standards of the Ministry of Economic Affairs only prints for consumer cooperation (please read the precautions on the back before filling out this page) XADDR Department 3 8 and YADDR Department 3 9 indicate the X-axis direction and y-axis of the clamping stage 2 The index unit of the moving unit in the direction is accumulated in the X / Y control unit 34. As a result, as shown in FIG. 7, on each product wafer, the coordinate values of a X 1 ~ a X 6 are provided on the X axis as the horizontal axis, and the coordinate values of ay 1 ~ ay 6 are provided on the y axis as the vertical axis. . The movable area of the clamping stage 2 is divided into grid patterns in index units, and each wafer is allocated by providing the X coordinate value and the y coordinate value of the grids. Align the movement direction of the clamping table 2 with the semiconductor wafer 1 The standard size of the paper is in accordance with the Chinese National Standard (CNS) A4 (210X297 mm) -5-The Central Standards Bureau of the Ministry of Economic Affairs only the Consumer Cooperative A7 B7 5 The description of the invention (3) The arrangement direction of the lattice pattern is the same. Fig. 10 shows that after the entire row, whether the five wafers of the appropriately distributed product wafers 7 1 to 7 5 all have the same index unit is checked. With this, the alignment of the X axis and the y axis and the confirmation of the wafer size are completed. In addition, the product wafer 72 and the other four product wafers 71, 73, 74, 75 form different product wafers A 'on the irradiation, but they can be aligned without problems because they are the same as the product wafer B . 12 is a diagram showing an example of movement of the clamping stage 2 after the alignment is completed. The clamping stage 2 can be accurately moved and controlled from the product 52 as the starting point (1) and from (2) ((3) .., (14) (15) (16) to the final wafer of 1 wafer size. This The movement control is performed using the XADDR section 38 and the YADDR section 39 in accordance with the above-mentioned movement control direction in the cumulative indication · wafer size units a and b. The coordinates of each product wafer are from the product wafer 51 X:. A X 3 Y: ayl to product wafer 52 X: ax4, Y: ayl moves 1 unit in the X coordinate direction when moving one in the X axis direction. Similarly, moving 1 unit in the Y axis direction causes the Y coordinate to change A unit change of 1 index is generated. Each product wafer conducts a conductivity measurement at each movement of the detector inspection position. The result of this conductivity measurement (good product / defective product) is connected to the holder of each product wafer and stored in the temporary storage. When measuring multiple products at the same time, proceed as follows. Figure 14 shows an example of the operation of measuring two product wafers simultaneously. Moving with two detectors arranged, two products can be measured simultaneously Jingben paper scale is applicable to China National Standard (CNS) A4 specification (210X2 97mm) (Please read the precautions on the back before filling in this page) Order A7 B7 printed by the Consumer Labor Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Invention description (4) Conductive characteristics of sheets 52, 5 3, etc. • Mounting table The movement is based on the product wafer 52 as the starting point (1) and moves to the next product wafer 54 (2). In the XADDR section 38 and the YADDR section 39, a coordinate value in which only one amount is temporarily stored is formed. The information of the measurement command part 3 3 is allocated to other wafer holders. Figure 14 shows an example of simultaneous measurement of the product wafers relative to the reference position at the same time on the measurement command part 3 3, which will be measured simultaneously. The other wafers are temporarily stored in the right position. When the X / Y control unit 3 4 receives the instruction of the simultaneous measurement instruction unit 3 3, the number of simultaneous measurements in one group (two in FIG. 14) is performed in units of groups. The movement control of the clamping table 2. In this case, two sets are used. The measurement result is the same as the case of one measurement. It is connected to the coordinates of each wafer and held in a temporary memory, etc. 囵 1 6 means When two product wafers in the X-axis direction and three in the y-axis direction are measured simultaneously The movement example of the tight mounting table. When the reference wafer at this time is 5 2 (1 3 2)-once it is set at the same time and temporarily stored, the grid area where the product wafer is not actually formed 1 3 1, 1 3 3 The stage will also move inside. At this time, of course, the XADDR section 38 or the YADDR section 39 are the coordinates indicating the grid areas 131 and 133 where the product wafer is not formed. The other 5 wafers are allocated based on the set coordinates In each coordinate, it is the same as that of two simultaneous measurements. The information of the same measurement result as each measurement is connected to the chip coordinate and kept in the temporary memory, etc. · This paper concentration scale is applicable to the Chinese National Standard (CNS) A4 size (210X297mm) ---- rl-llt outfit ------ ordered ------ f (please read the notes on the back before filling this page) Central Bureau of Standards, Ministry of Economic Affairs Cooperative printing and printing 320737 Α7 Β7 V. Description of the invention (5) Figure 15 shows the case of simultaneous measurement of 6 of the y-axis 1 column. Basically, it is the same as that for the measurement of 1, 2, and 2 X 3 above, so the detailed description can be omitted. Fig. 20 is a diagram showing an example of the operation of displaying a defective print (ink, etc.) on a product wafer temporarily stored with respect to a defective product after the completion of the conductivity measurement. When the measurement of the final wafer is completed, the detector is marked with a mark (ink, etc.) according to the order in which the defective wafer information is temporarily stored. When the defective wafers are 4 wafers of 171, 172, 173, and 174, they are moved in the order of (1) (2) (3) (4) to mark the mark (ink, etc.). Fig. 2 2 shows the movement control clamping load. An example of the flow chart of the conventional procedure for setting up station 2. Once it is determined that it is moving towards the next wafer, the amount of movement of several wafers can be determined. First, to move the clamping / mounting table 2, start from [A]. If it is not the last chip in the line in ST1 〇, move the line 1 index (1 chip) amount in ST1 1 [B] to complete the subroutine. In the last wafer of the row, the column judgment is performed in ST 12, and if it is the last column, the final wafer is judged without moving it to [C] to complete the subroutine. If ST 1 2 is not the last column, move to the next chip in ST 1 3, and load the row movement information η at the same time, in ST1 4 move the column by 1 index while making the row move η index. In addition, the moving direction is opposite to the previous direction, and the same operation as described above is repeated. Complete the move here and complete the subroutine with [B]. This paper scale is applicable to China National Standard (CNS) A4 specification (210X297mm) ---- 1JA f, (please read the precautions on the back and then fill out this page) Order -8-A7 B7 Central Standards Bureau of the Ministry of Economic Affairs Consumer Cooperative Yinli V. Description of the invention (6) 1 1 [Problems to be solved by the invention 1 1 I On the other hand t In order to investigate the quality of the wafer manufacturing process on the semiconductor wafer, etc. 1 1 is arranged in addition to the product wafer When there are TEG wafers -V 1 I please 1 I 0 TEG wafer 9 Especially the production technology of new product wafers can play an important role in the early stage of development until 1 I 1 I is fully established. Back 1 1 TEG The wafer must be formed on the wafer of each semiconductor during every irradiation when manufacturing the wafer. Item 1 is refilled. 5 is an example of arranging a product wafer A and a writing book 1 TEG wafer with the same irradiation. Figure 0 The horizontal width of product wafer A is page 1 1 I a TEG The width of wafer T is C and a Form different values 0 1 1 In the past, as shown in FIG. 5, the EG wafer T must be paired with the product wafer 1 to 1 I 1. The above reason is that only a single index 1 1 can be used in the crystal detection device of Xi-zhi Unit movement control clamping stage 2 0 In the conventional case when T EG crystal 1 1 piece T is adjacent to product wafer 1 to 1 or only one same shape 1 4 into 1 product wafer and 1 TEG wafer The product wafer can be inspected. Γ As mentioned above, the TEG wafer shown in Figure 5 must be arranged with a product crystal 1 A 1 to 1 »Therefore, most TEG crystals form a semiconductor hLSw crystal 1 * I circle 〇1 And 9 As shown in FIG. 6, a plurality of product wafers A and 1 T EG 1 1 I wafer T is formed by the same pressing and cannot be inspected by the conventional wafer 1 1 1 detection device 0 1 1 Let TEG wafer be the production technology of the new product wafer. After sufficient 1 1 is established, f will be formed within a limited range of semiconductor wafers. 1 1 This paper size is applicable to the Chinese National Standard Falcon (CNS) A4 specification (210X297 Mm) A7 B7 printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. V. Description of invention (7) The problem is that the number of product chips is small. For example, when compared with the one shown in circle 5 and shown in FIG. 6, there must be two amounts of TE G wafer T, and the number of pressings required to form a predetermined number of product wafers is twice. In recent years, the size of product wafers has tended to increase gradually, and it is necessary to secure a larger field for product wafers as much as possible within the effective area of the wafer and to minimize the necessity of occupying the surface of TEG wafers . In addition, in the conventional case where the TEG wafer 64 is formed as shown in FIG. 9 ′, compared with the case where the TEG wafer is not formed as shown in FIG. 7, since the pressed area is increased on the semiconductor wafer 1, the number of product wafers 5 and 5 is reduced. The number of 3. For example, when comparing Fig. 7 with Fig. 9, there is a difference in the number of 4 wafers. However, since the number of product wafers is reduced on one semiconductor wafer, the number of semiconductor wafers required for manufacturing a predetermined number of product wafers must be increased accordingly. In addition, not all of the TEG chips 64 are effective and cannot obtain information on the left and right ends, which may cause problems in analysis. In order to solve the above-mentioned problems, a plurality of product wafers A and one TE G wafer T as shown in FIG. 6 are formed on the same slice, and the increase in the surface grain of the TE G wafer is suppressed to the minimum necessary, while the wafer The detection device itself must be able to inspect the formed product wafer shown in FIG. 6. FIG. 6 is an example diagram of forming two unit wafers A and one TEG wafer T as a unit group, and irradiating the unit unit group with 1 irradiation, and the dimension in the X direction of 1 irradiation is the size of a + a + c Illumination diagram. Relative to two product wafers, the required size of the TEG wafer is reduced to 1/2. In addition, if m product wafers and one TEG wafer are formed by one irradiation, the size required for the TEG wafer can be reduced to 1 / m. The paper size is applicable to the Chinese National Standard (CNs) 84 cell (210X297 mm) ) (Please read the precautions on the back before filling in this page) Order _ 10-A7 B7_ Printed by the Ministry of Economic Affairs, Central Standards Bureau, Industry and Consumer Cooperation V. Invention Description (8) 〇 If the purpose of the present invention is to provide the above The problem with the conventional technology is that a plurality of product wafers and one TEG wafer are semiconductor inspection devices that can inspect semiconductor devices formed by the same irradiation. [Means for Solving the Problem] In order to achieve the above-mentioned object, the semiconductor device of the present invention mounts a semiconductor wafer on which a product wafer and a TEG wafer for characteristic inspection are repeatedly arranged on a mounting table, and moves and scans the mounting table The detector is used to check the quality of each product wafer, and the mark of the inspection result is displayed in the semiconductor inspection device of the product wafer. It is characterized by comprising: repeating the arrangement on the semiconductor to form a plurality of the same irradiation The unit group formed by the product wafer and one TE G. wafer is formed by the unit of length of the unit unit, the unit of length of the product wafer, the unit of length of the TEG wafer, or a combination of the lengths of these combinations. An arbitrary length unit is set as a moving unit of the mounting table and controls the mounting table control means of the mounting table. [Embodiment of the Invention] The embodiment of the semiconductor inspection apparatus of the present invention will be described with reference to the drawings. FIG. 3 is a general block diagram showing a wafer inspection apparatus of a semiconductor inspection apparatus. The semiconductor wafer 1 held on the clamping table 2 is equipped with product wafers and TEG wafers. The product wafers and TEG wafers are as shown in Fig. 6. This paper size is applicable to the China Standards (CNS) A4 (210X297mm) ( Please read the note $ item on the back and then fill out this page) policy. Order-11-A7 B7 printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Invention description (9) Repeatedly form 2 TEG chips A and A unit group formed by 1 D EG wafer T. The clamping stage 2 is moved and controlled by the stage control means 4. The detector 3 is controlled by the detection control means 5 and checks the conductive properties of the product wafer moving downward from the detector 3 and the like. The mounting table control means 4 and the detector control means 5 are controlled by the inspection control means 6, and the recording control means 6 are used for record management based on the inspection results of the detector 3 and the like. Fig. 3 is a block diagram showing the configuration of the stage control means 4 of this embodiment. The stage control means 4 shown in FIG. 2 is compared with that shown in FIG. 1 and the XTEG part 41 and YTEG part 4 2 and TEG part 4 3 are re-set. In FIG. 6, a and .b are used as the size of the product wafer A, and b C As the wafer size of the TEG wafer T, the product wafer A and the TEG wafer T have the same size in either the X-axis direction or the y-axis direction. The chip size c of the X axis direction of the TEG wafer T is used as an index and supplied to the XTEG part 41, and the chip size b of the Y axis direction of the TEG wafer T is used as an index to the YTEG part 42, the XTEG part 41 and the YTEG part 4 2 is instructed by the X / γ control unit 34 based on such information. The TEG unit 43 is an instruction to the X / Y control unit 34 using information related to the TEG chip as a TEG parameter. The X / Y control unit 3 4 calculates the index required for the entire row of the clamping table 2 or the basic movement control according to the instructions of the TEG unit 4 3 etc. This paper scale applies the Chinese National Standard (CNS) A4 specification (210X297 Mm) '-12-(Please read the precautions on the back before filling out this page), clothing,

.1T 320737 Α7 Β7 五、發明説明（10) TEG部4 3對於X/Y控制部3 4發出指示之 TEG 參數爲 TEG 參數 X/Y、nn、mm。 T E G參數爲指示夾緊載置台2移動控制模式的參數〇根據X/Y值進行其次的指示。從以下所設定之 TEG參數X/Y中選擇TEG參數X/Y的值，而在設定時以製品晶片的長度單位及以單位設定組的長度單位之任一長度單位作爲夾緊載置台2的移動單位，又，在印字時以檢査結果作爲移動單位而設定製品晶片的長度單位者 9 X/Y是表示未設置τ E G晶片。 X/Y=l是表示在X方向具有TEG晶片，在檢査時移動測定時，可根·據檢査結果於製品晶片之印字良否等兩方的時候有效，而指示以製品晶片的單位移動。 Χ/Υ=2爲在Υ方向具有TEG晶片，一旦檢査而予以移動測定時，在根據檢査的結果係於印字良否之雙方時有效，而指示以製品晶片的單位移動。經濟部中央標準局貝工消费合作社印製 (請先閲讀背面之注意事項再填寫本頁) Χ/Υ = 5爲在X方向具有TE G晶片，一旦檢査而予以移動測定時無效，並根據檢査結果僅於印字良否之雙方時有效，而指示以單位組的單位移動。 Χ/Υ=6爲在Υ方向具有TEG晶片，一旦檢査而予以移動測定時無效，並根據檢査結果僅於印字良否之雙方時有效，而指示以單位組的單位移動。此外，上述表示之T E G參數Χ/Υ爲其一例•並設本紙悵尺度適用中國國家標準（CNS ) Α4规格（210X297公釐） -13 - 經濟部中央標準局月工消费合作杜印掣 A7 B7 五、發明説明（11) 定T E G參數X/Y的值時，可以單位組的長度單位、製品晶片的長度單位、T E G晶片的長度單位、或該等長度單位的組合所成之組合單位中任意長度單位作爲夾緊載置台2的移動單位而設定者。又，TEG參數η η是表示單位群晶片之製品晶片A 的個數。 T E G參數mm是表示在單位群晶片內從基準晶片（例如X軸方向的左端、y軸方向最上方的製品晶片）至 T E G晶片爲止之製品晶片的個數。 TEG部43係指示TEG參數X/Y、nn、mm 如下。以下是藉TEG參數X/Y、η η、mm的組及該 TE G參數組表示的單位組所構成，即針對製品晶片（A )與TEG晶片（T.)的配置關係說明如下》3位的數字是表示TEG參數X/Y、nn、mm組的種類。 (1) TEG 參數 X/Y、nn、mni 爲 122 時，.1T 320737 Α7 Β7 V. Description of the invention (10) The TEG parameter of the TEG part 4 3 to the X / Y control part 3 4 is the TEG parameter X / Y, nn, mm. The T E G parameter is a parameter indicating the movement control mode of the clamping stage 2. The next instruction is based on the X / Y value. Select the value of the TEG parameter X / Y from the TEG parameter X / Y set below, and any length unit of the length unit of the product wafer and the unit of the unit setting group is used as the clamping stage 2 during setting The unit of movement, and the length unit of the product wafer is set using the inspection result as the unit of movement during printing. 9 X / Y means that no τ EG wafer is set. X / Y = 1 indicates that there is a TEG wafer in the X direction. When the measurement is moved during the inspection, it can be valid based on the inspection result when the printing of the product wafer is good or not, and indicates the movement of the product wafer unit. Χ / Υ = 2 means that there is a TEG wafer in the Υ direction and it is moved and measured once it is inspected. It is valid when the result of the inspection is on both sides of the printing quality, and it is instructed to move in units of product wafers. Printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling in this page) Χ / Υ = 5 means that there is a TE G chip in the X direction, which is invalid when it is moved and measured once inspected, and according to the inspection The result is only valid when the printing is good or bad, and the instruction is to move in units of unit groups. Χ / Υ = 6 means that there is a TEG wafer in the Υ direction, and it is invalid when it is moved and measured once it is inspected, and it is only valid for both sides of the printing quality according to the inspection result, and it is instructed to move in units of unit groups. In addition, the above-mentioned TEG parameters Χ / Υ are just one example. • The paper size is set in accordance with the Chinese National Standard (CNS) Α4 specification (210X297 mm) -13-Monthly Industry and Consumer Cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs V. Description of the invention (11) When setting the value of the TEG parameter X / Y, the unit of length of the unit group, the unit of length of the product wafer, the unit of length of the TEG wafer, or a combination of these units can be any The unit of length is set as the moving unit of the clamping table 2. In addition, the TEG parameter η η is the number of product wafers A representing unit group wafers. The T E G parameter mm is the number of product wafers from the reference wafer (for example, the left end in the X-axis direction and the top product wafer in the y-axis direction) to the T E G wafer in the unit group wafer. The TEG unit 43 instructs the TEG parameters X / Y, nn, and mm as follows. The following is the composition of the TEG parameter X / Y, η η, mm and the unit group represented by the TEG parameter group, that is, the configuration relationship between the product wafer (A) and the TEG wafer (T.) is explained as follows The numbers indicate the type of TEG parameter X / Y, nn, and mm groups. (1) When the TEG parameters X / Y, nn, and mni are 122,

A A T 即，表示在x軸方向以製品晶片、製品晶片、T E G 晶片的順序配列而成。 (2) TEG 參數 X/Y、nn、mm 爲 1 20 時，本紙張尺度適用中國國家標準（CNS ) Α4規格（2丨0X297公釐） --------^— (請先閲讀背面之注意事項再填寫本頁) 、?τ 14 經濟部中央標隼局頁工消费合作社印製 A7 B7 五、發明説明（12)A A T means that the product wafer, the product wafer, and the T E G wafer are arranged in this order in the x-axis direction. (2) When the TEG parameters X / Y, nn, and mm are 1 20, the paper size is applicable to the Chinese National Standard (CNS) Α4 specification (2 丨 0X297mm) -------- ^ — (please read first Note on the back and then fill out this page),? Τ 14 Printed by the Ministry of Economic Affairs, Central Standard Falcon Bureau Page Consumption Cooperative A7 B7 V. Description of invention (12)

T A A 即，表示在x軸方向以T E G晶片、製品晶片、製品晶片的順序配列而成。 (3) TEG 參數 X/Y、nn、mm 爲 1 52 時，T A A means that the T E G wafer, the product wafer, and the product wafer are arranged in this order in the x-axis direction. (3) When the TEG parameters X / Y, nn, mm are 1 52,

A A T A A A 即，表示在x軸方向以製品晶片、製品晶片、T E G 晶片、製品晶片、製品晶片、製品晶片的順序配列而成。 (4 ) T E G 參數 X./ Y、nn、mm 爲 222 時，A A T A A A means that it is arranged in the order of product wafer, product wafer, T E G wafer, product wafer, product wafer, and product wafer in the x-axis direction. (4) When the T E G parameters X./Y, nn, mm are 222,

AA

T 即，表示在y軸方向以製品晶片、製品晶片、T E G 晶片的順序配列而成。其次，以圖6爲例說明如下。圖6表示之單位組的TEG參數X/Y、η η、mm 爲1 2 2時，於X索引部3 1賦予a 、Y索引部3 2賦予b之索引本紙张尺度適用中國國家標準（CNS ) A4規格（210X297公釐） : :ι·Γ装訂 f (請先閲讀背面之注意事項再填寫本頁) -15 - B7 五、發明説明（13) ，於XTEG部41賦予a、YTEG部42賦予b之索引，而實際動作時的移動置在X軸方向形成2 a + e、y 軸方向則形成b。圖8是表示以1次切片形成圖6表示單位組之半_體晶圓的晶片配置狀態。藉TEG部43所指示之TEG參數X/Y、nn、 m m，及製品晶片5 2、5 3的晶片尺寸a 、b，在製品晶片（A) 52與製品晶片（B) 53上分配與圖4及圖 7表示的場合相同之個別的X、y座標。圓11是表示探測器在辨識晶圓內晶片配置所須之整列完成後可進行適當整列之確認用而抽出的製品晶片8 1 〜8 5的位置圖。可確認5個單位組（在此的單位組是由圖6表示的2個製品·晶片與1個T E G晶片等構成）全部皆爲同等，藉此可完成X軸方向、y軸方向及單位組尺寸的確認。經濟部中央樣準局貝工消费合作社印製 (請先閲讀背面之注意事項再填寫本頁) 圖13是表示夾緊載置台2的整列完成後的移動動作例圖》而將TEG部43之TEG參數X/Y、nn、 mm設定爲1 22。藉此一TEG參數X/Y、nn、 mm的設定使整列以2個製品晶片52、5 3與1個 TE G晶片6 4所構成的單位組爲單位而進行，檢査用之測定則形成可以製品晶片5 2、5 3的單位進行。圚13中，以單位組從起點（1) (2) (3) . · (14)(15)(16)至最後晶片爲止，在X軸上正確移動控制2次之製品晶片的1晶片尺寸單位a及1次之本紙張尺度適用中國國家標準（CNS ) A4说格（210X297公釐） ~ 16 * A7 ___B7_ 五、發明説明（14) TEG晶片的1晶片尺寸單位c。y軸上是在X軸的兩端部進行b尺寸的移動控制》此時，XADDR部38、YADDR部39所指示的座標是與以晶片動作1對1的關係變化。各晶片座標是從製品晶片52的X : bx3、Y : byl朝著製品53 之X : b x4、Y : b y 1 ，及將晶片朝著X軸方向移動 1個時使X座標變化爲相鄰的晶片座標。同樣地對於y軸方向使晶片移動1個時即可使y座探變化1晶片置。導電測定的結果（良品/不良品）是與各製品晶片的座標連結而保管於暫存器等的方法是與上述習知方法相同〇圖1 5是表示同時測定2個時的動作例圖。以單位組爲單位而可同時測定·導電特性。夾緊載置台2的移動控制是以圖1 3表示的單位組的起點（1 )爲起點，而其次依 (2)(3)...(14)(15)(16)移動控制〇 XADDR部3 8與YADDR部3 9上分別形成僅經濟部中央標隼局只工消费合作社印製 ---------4裝-- (請先閲讀背面之注意事項再填寫本頁) 暫存一個量之座標值者。同時，從測定指令部3 3的資訊相對分配其他的晶片座標。圖1 7是表示同時測定X軸方向2個、y軸方向3個共計6個製品晶片時之夾緊載置台2的移動動作例圖。圖18是表示同時測定1列配列在y軸方向的6個製品晶片時之夾緊載置台2的移動動作例圖。圖21是表示相對於作爲導電測定完成後不良品而予本紙^尺度適用中國國家標準（CNS ) A4规格（210X297公釐） -17 - 經濟部中央標準局月工消費合作社印製 A7 B7____ 五、發明説明（15) 暫存的晶片上檩示不良印（墨水等）用之動作例圖。一旦完成最後晶片的測定時，探測器3係依不良晶片的資訊暫存順序而標以印記（墨水等）。圖2 1中，不良晶片爲181、182、183、184的場合，根據（ 1) (2) (3) (4)的順序移動而標以印記（墨水等 )。如圖21所示，從TEG部43之TEG參數X/Y 、η η、mm與各製品晶片的座標指定不良晶片的座標，而可直接移動者。此外，在製品晶片52、53與TEG 晶片6 4所構成之基準組的基準晶片（該例爲製品晶片 5 2 )移動之後，並可相對移動而在製品晶片5 2、製品晶片5 3、或者雙方的製品5 2、5 3上檩示不良的印記〇圖2 3是表示移·動控制夾緊載置台2的流程例圖。相對於圖2 2表示之習知流程例，追加TE G晶片有無的判斷。在左右或上下的進行方向上辨識TE G晶片最初的位置是由於單位組的構成種類而必須辨識其相異處而使之加以動作。首先，爲了使夾緊載置台2移動而從〔A〕加以實行。ST1 〇中如不是最後的晶片時，在ST2 0中判斷 TEG參數X/Y是否爲1 » TEG參數X/Y爲1時由於在X方向具有TEG晶片’因此以ST2 1判斷其次的移動側是否有TEG晶片。藉ST21判斷其次的移動側是否有TEG晶片時，僅移動藉XTEG部41所提供的 TEG晶片之X方向的橫向寬幅值XT.S I ZE，其次在本紙張尺度適用中國國家標準（CNS ) A4规格（210XM7公釐） (婧先閲讀背面之注意事項再填寫本頁) 訂 -18 - 經濟部中央標率局員工消费合作社印製 320737 A7 B7 五、發明説明（16) ST1 1—索引移動行。於ST20中判斷TEG參數X /Y不爲1時或在ST21中判斷其次移動側並非TEG 晶片時則前進至S T 1 1。完成最後晶片的測定時，探測器會根據不良晶片資訊暫存的順序標示印記（里水等）。不良晶片爲1 7 1、 172、173、174的4個枚晶片時，依（1) (2 )(3)(4)的順序移動而標以印記（墨水等）。在ST1 〇中不是最後行的場合時，以ST1 2判斷是否爲最後的列，判斷不是最後列時在S T 2 3中判斷 TEG參數X/Y是否爲2。當TEG參數X/Y爲2時，在y方向具有TEG晶片，因此可在ST2 4判斷其次之移動側是否爲TE G晶片。如在ST2 4判斷其次的移動側爲TE G晶片時·，僅藉YTEG4 2所供應之TEG 晶片的y方向縱向寬度值YTS I ZE，其次以ST26 將列移動1索引》並於ST2 3中判斷TEG參數X/Y 不爲2時或以ST2 4判斷其次的移動側並非是TEG晶片時前進至S T 2 6。如以上說明，根據本實施形態時，載置台控制手段4 具備 XTEG 部 41、YTEG 部 42 及 TEG 部 43，因此即使相對於重覆同一照射形成複數個製品晶片A與 1個TEG晶片T的單位組而配列之半導體晶圓時，可檢査每一製品晶片A良否的同時，移動掃描夾緊載置台2而將檢査結果的印記標示在製品晶片A上》其結果，即使對於未形成1對1配列有製品晶片A與本紙張尺度適用中國國家榡準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 衣· 訂 -19 _ A7 B7 五、發明説明（Π) T E G晶片T的半導體晶圓時同樣可進行製品晶片A的檢査，並可將配設在半導體晶圖1上的TE G晶片T的個數減少至必要的最小限•並且可增加配設在半導體晶圓上之製品晶片A的個數。〔發明效果〕如以上說明，根據本發明之構成具備：可以單位組的長度單位、製品晶片的長度單位、TEG晶片的長度單位、或者組合該等長度單位而形成的組合長度單位中任意長度單位移動而控制載置台之載置台控制手段，因此即使重覆對於利用同一照射形成複數個製品晶片及1個T E G晶片而成的單位組而配列之半導體晶圓時，仍可檢査每一製品的良否，同時移動.掃描載置台而將檢査結果的印記標示在製品晶片上，其可將半導體晶圓的丁 E G晶片的個數限制在必要之最小限的個數。〔圖示之簡單說明〕經濟部中央標準局負工消费合作社印繁 (請先閲讀背面之注意事項再填寫本頁) 圖1爲表示控制習知晶圓探測裝置之載置台的載置台控制手段的構成方塊圖》圖2是表示控制本發明半導體檢査裝置之載置台的載置台控制手段的構成方塊圚β 圖3是表示本發明半導體檢査裝置之晶園探測裝置之概略構成方塊圖。圖4是表示以一次照射形成2個製品晶片的配列例圖本紙?民尺度適用中國國家標準（€呢）人4規格（210乂297公釐） — -20 - 經濟部中央標率局只工消費合作杜印1i A7 B7 五、發明説明（18) 圖5是表示以一次照射形成1個製品晶片及1個 TEG晶片的配列例圓。圖6是表示以一次照射形成2個製品晶片與1個 TEG晶片的配列例圚，藉2個製品晶片與1個TEG晶片構成單位組· 圖7是對應圖4表示半導體晶園之製品晶片的配列例圚。圖8是對應圖6表示半導體晶圖之製品晶片與T E G 晶片的配列例圔。T means that the product wafer, the product wafer, and the T E G wafer are arranged in this order in the y-axis direction. Next, take FIG. 6 as an example to explain as follows. When the TEG parameters X / Y, η η, and mm of the unit group shown in FIG. 6 are 1 2 2, the index assigned to a in the X index part 3 1 and the index assigned to the b in the Y index part 3 2 This paper scale is subject to the Chinese National Standard (CNS ) A4 specification (210X297 mm):: ι · Γ binding f (please read the precautions on the back before filling in this page) -15-B7 5. Description of the invention (13), assigned to a, YTEG department at XTEG 41 42 gives the index of b, and the movement during actual operation forms 2 a + e in the X-axis direction, and b in the y-axis direction. Fig. 8 is a diagram showing a wafer arrangement state in which the half-wafer wafers of the unit group shown in Fig. 6 are formed in one slice. With the TEG parameters X / Y, nn, mm instructed by the TEG part 43, and the wafer sizes a, b of the product wafers 5 2, 5 3, assign and map on the product wafer (A) 52 and the product wafer (B) 53 4 and FIG. 7 are the same individual X and y coordinates in the case shown. Circle 11 is a position diagram showing the product wafers 8 1 to 8 5 extracted by the detector after the alignment necessary for recognizing the wafer arrangement within the wafer is completed. It can be confirmed that the 5 unit groups (the unit groups here are composed of 2 products, wafers, and 1 TEG wafer shown in FIG. 6) are all equal, thereby completing the X-axis direction, y-axis direction, and unit group Confirmation of size. Printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling in this page). Figure 13 is an example of the movement of the clamping table 2 after the entire row is completed. The TEG parameters X / Y, nn, mm are set to 122. With this setting of a TEG parameter X / Y, nn, mm, the entire row is performed in units of two product wafers 52, 53 and one TE G wafer 64, and the measurement for inspection can be performed. Product wafers 5 2, 5 3 are performed in units. In 圚 13, from the starting point (1) (2) (3). · (14) (15) (16) to the last wafer, move the X-axis to control the 1 wafer size of the product wafer twice. The unit a and the first time the paper scale is applicable to the Chinese National Standard (CNS) A4 grid (210X297 mm) ~ 16 * A7 ___B7_ V. Description of the invention (14) 1 wafer size unit c of TEG wafer. On the y-axis, the movement of size b is performed at both ends of the X-axis. At this time, the coordinates indicated by the XADDR section 38 and the YADDR section 39 are changed in a one-to-one relationship with the wafer operation. Each wafer coordinate is from X: bx3, Y: byl of the product wafer 52 to X: b x4, Y: by 1 of the product 53, and the X coordinate is changed to be adjacent when the wafer is moved by one in the X axis direction Wafer coordinates. Similarly, when the wafer is moved by one in the y-axis direction, the y probe can be changed by one wafer. The result of the conductivity measurement (good product / defective product) is linked to the coordinates of each product wafer and stored in the register, etc. The method is the same as the above-mentioned conventional method. FIG. 15 is a diagram showing an example of the operation when measuring two simultaneously. The unit group can be used to measure and conduct electrical properties simultaneously. The movement control of the clamping table 2 is based on the starting point (1) of the unit group shown in FIG. 13 as the starting point, followed by (2) (3) ... (14) (15) (16) movement control. XADDR Department 3 8 and YADDR Department 3 9 are formed by the Ministry of Economic Affairs, Central Standard Falcon Bureau, and only printed by the consumer cooperative --------- 4 equipment-(please read the precautions on the back before filling this page) Temporarily store the coordinate value of a quantity. At the same time, other wafer coordinates are allocated relatively to the information from the measurement command section 33. Fig. 17 is a diagram showing an example of the movement operation of the clamping stage 2 when measuring two product wafers in total, six in the X-axis direction and three in the y-axis direction. Fig. 18 is a diagram showing an example of the movement operation of the clamping stage 2 when six product wafers arranged in a row in the y-axis direction are simultaneously measured. Figure 21 shows that the Chinese National Standard (CNS) A4 specification (210X297 mm) is applied to the paper as a defective product after the completion of the electrical conductivity measurement -17-A7 B7____ printed by Yuegong Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs Description of the invention (15) An example of the operation for displaying the defective print (ink, etc.) on the temporarily stored wafer. Once the measurement of the final wafer is completed, the detector 3 is marked with an imprint (ink, etc.) according to the temporary storage order of the defective wafer. In Fig. 21, when the defective wafers are 181, 182, 183, and 184, they are moved in the order of (1) (2) (3) (4) and marked with a mark (ink, etc.). As shown in FIG. 21, the coordinates of the defective wafer are designated from the TEG parameters X / Y, η η, mm of the TEG unit 43 and the coordinates of each product wafer, and the person can be moved directly. In addition, after the reference wafer (in this example, the product wafer 5 2) of the reference group formed by the product wafers 52 and 53 and the TEG wafer 64 moves, it can be relatively moved to the product wafer 5 2, the product wafer 53, or Both products 5 2 and 5 3 show defective marks on the purlins. FIG. 23 shows an example of the flow of the clamping table 2 by the movement and movement control. With respect to the conventional flow example shown in Fig. 22, it is judged whether a TEG wafer is added or not. Recognizing the initial position of the TE G chip in the direction of left, right, or up and down is due to the type of unit group, and it is necessary to recognize the difference and make it act. First, to move the clamping stage 2 from [A]. If it is not the last wafer in ST1 〇, it is judged in ST2 0 whether the TEG parameter X / Y is 1 »When the TEG parameter X / Y is 1, since there is a TEG wafer in the X direction ', ST2 1 is used to judge whether the next moving side is There are TEG chips. When determining whether there is a TEG wafer on the moving side next by ST21, only move the horizontal width XT.SI ZE in the X direction of the TEG wafer provided by the XTEG part 41, followed by the Chinese National Standard (CNS) A4 at this paper scale Specifications (210XM7mm) (Jing first read the precautions on the back and then fill out this page) Order -18-Printed by the Ministry of Economic Affairs, Central Standard Rate Bureau, Employee Consumer Cooperatives 320737 A7 B7 V. Invention description (16) ST1 1-Index Mobile . When it is judged in ST20 that the TEG parameter X / Y is not 1, or in ST21 when it is judged that the second moving side is not a TEG wafer, the process proceeds to ST11. When the measurement of the last chip is completed, the detector will mark the mark (Lishui, etc.) according to the order in which the defective chip information is temporarily stored. When the defective wafers are four of 171, 172, 173, and 174, they are moved in the order of (1) (2) (3) (4) and marked with marks (ink, etc.). When it is not the last row in ST1 〇, it is judged by ST1 2 whether it is the last column, and if it is not the last column, it is judged by ST 2 3 whether the TEG parameter X / Y is 2. When the TEG parameter X / Y is 2, there is a TEG wafer in the y direction, so it can be judged in ST24 whether the next moving side is a TEG wafer. If it is judged in ST2 4 that the next moving side is a TEG wafer, only borrow the YTS I ZE of the YEG longitudinal width value of the TEG wafer supplied by YTEG4 2, and then move the column 1 index by ST26 "and judge in ST2 3. When the TEG parameter X / Y is not 2 or when ST2 4 determines that the next moving side is not a TEG wafer, the process proceeds to ST 26. As described above, according to the present embodiment, the stage control means 4 includes the XTEG part 41, the YTEG part 42, and the TEG part 43, so even if the unit of forming a plurality of product wafers A and one TEG wafer T with respect to the same irradiation is repeated When grouping and arranging semiconductor wafers, you can check the quality of each product wafer A while moving the scanning and clamping stage 2 and mark the inspection result on the product wafer A. The product wafer A and the paper size are applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) (please read the precautions on the back and then fill out this page) Clothing · order -19 _ A7 B7 V. Description of invention ( Π) The semiconductor wafer of the TEG wafer T can also be inspected for the product wafer A, and the number of TEG wafers T arranged on the semiconductor wafer 1 can be reduced to the minimum necessary. The number of product wafers A on the semiconductor wafer. [Effects of the Invention] As described above, the configuration according to the present invention includes: any length unit that can be formed by combining the unit of length of the unit group, the unit of length of the product wafer, the unit of length of the TEG wafer, or the combined length unit formed by combining these units of length The stage control means that moves and controls the stage, so even if the semiconductor wafers arranged for a unit group formed by forming multiple product wafers and one TEG wafer by the same irradiation are repeated, the quality of each product can still be checked At the same time, move. Scan the mounting table and mark the inspection result on the product wafer, which can limit the number of EG wafers of the semiconductor wafer to the minimum necessary number. [Simple description of the figure] Indo-China Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs (please read the precautions on the back before filling in this page) Figure 1 shows the structure of the stage control means that controls the stage of the conventional wafer detection device [Block Diagram] FIG. 2 is a block diagram showing the configuration of the stage control means for controlling the stage of the semiconductor inspection apparatus of the present invention. FIG. 3 is a block diagram showing a schematic configuration of the crystal detector of the semiconductor inspection apparatus of the present invention. Figure 4 is a diagram showing an example of the arrangement of two product wafers formed by one irradiation. The civil standard is applicable to the Chinese national standard (€?), And the human 4 specifications (210 to 297 mm) — -20-The Central Bureau of Standards of the Ministry of Economic Affairs only works Consumer Cooperation Duin 1i A7 B7 V. Description of the invention (18) Fig. 5 shows an example of the arrangement of a product wafer and a TEG wafer formed by one irradiation. 6 is a diagram showing an example of the arrangement of two product wafers and one TEG wafer formed by one irradiation, and two product wafers and one TEG wafer constitute a unit group. FIG. 7 is a diagram corresponding to FIG. 4 showing a product wafer of a semiconductor crystal garden. With examples. FIG. 8 corresponds to FIG. 6 and shows an example of arrangement of the product wafer and the T E G wafer of the semiconductor crystal pattern.

圖9是對應圖5表示半導髖晶_之製品晶片與T E G 晶片的配列例圖。圖1 ,0是對應圖.7表示以習知之晶片單位進行整列之動作確認說明圚。圖1 1是對應圖9表示以本發明單位組的單位進行整列之動作確認說明圖。圖12是對應圖7表示習知之晶圓探測裝置的載置台移動動作例圖。圚13是對應圖8表示習知之晶圓探測裝置的載置台移動動作例圖。圖14是對應圖7表示同時測定2個製品晶片時習知載置台之移動動作例圖。圚15是對應圖8表示同時測定2個製品晶片時本發明載置台之移動動作例圖。本紙乐尺度適用中國國家標準（CNS ) A4規格（2lOX297公釐） (請先閲讀背面之注意事項再填寫本頁) t -21 - A7 B7 五、發明説明（19) 圖1 6是表示同時測定X方向2個、y方向3個共# 6個製品晶片所成之單位組時習知載置台移動動作例闽^ 圖17是表示同時測定X方向2個'y方向3個共計 6個製品晶片所成之單位組時本發明載置台移動動作例〇圖18是表示同時測定y方向配列6個製品晶片所成之單位組時習知載置台移動動作例圖。圖19是表示同時測定y方向配列6個製品晶片所成之單位組時本發明載置台移動動作例圖。圖2 0是表示檢査結果的印記打點之習知動作例圖。圖21是表示檢査結果的印記打點之本發明動作例圖圖2 2是說明習.知載置台之移動控制的流程圖》圓2 3是說明本發明載置台之移動控制的流程圖。〔符號說明〕 1 半導體晶圓經濟部中央標準局負工消费合作社印製 ......- . I— In m I n - -I - -n ...... 1^1 1^1 In、一 (請先聞讀背面之注^'項再填寫本頁) 2 載置台（夾緊載置台） 3 探測器 4 載置台控制手段 5 探測器控制手段 6 檢査控制手段 3 1 X索引部 3 2 Y索引部本紙张尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -22 - A7 B7 五、發明説明（20) 經濟部中央標準局貝工消费合作社印製 3 3 同時測定指令部 1 1 3 4 X / y 軸控制部 1 1 I 3 5 X 軸電動機驅動部 1 I 請 1 | 3 6 y 軸電動機驅動部先閲 1 I 讀 1 1 3 8 X A D D R 部背 1 % 1 之 1 3 9 Y A D D R 部注意 1 | 事 4 1 X Τ E G 部項再填 1 4 2 Y Τ E G 部 % 本衮頁 1 4 3 T Ε G 部 1 5 2 製品晶片 1 1 5 3 製品晶片 1 1 6 4 τ Ε G 晶片訂 1 a 製品晶片之 X 尺寸 1 I b 製品晶片之 y 尺寸 1 1 I c Τ Ε G 晶片之 X 尺寸 1 4 A 製品晶片丨· B 製品晶片 1 1 T Τ Ε G 晶片 ^ I a X 1 6 b X 1 6 X軸座標 1 a y 1 6 、 b y 1 6 y軸座標 1 1 1 7 1 7 5 製品晶片 1 1 I 8 1 /-s»/ 8 5 製品晶片 1 1 I ( 1 ) ( 1 6 ) 動作順序 1 1 本紙张尺度適用中國國家標準（CNS ) A4規格（2IOX297公釐） -23 -9 is a diagram corresponding to FIG. 5 showing an example of arrangement of a semiconducting hip crystal product wafer and a T E G wafer. Figures 1 and 0 are corresponding diagrams. Figure 7 shows the description of the operation confirmation for the entire row in the conventional wafer unit. Fig. 11 is an explanatory view corresponding to Fig. 9 showing the operation confirmation of performing the alignment in units of the unit group of the present invention. Fig. 12 is a diagram showing an example of the movement operation of the mounting table of the conventional wafer detection apparatus corresponding to Fig. 7. Fig. 13 is a diagram showing an example of the movement operation of the mounting table of the conventional wafer detection apparatus corresponding to Fig. 8. Fig. 14 is a diagram corresponding to Fig. 7 showing an example of the movement operation of the conventional stage when measuring two product wafers simultaneously. Fig. 15 corresponds to Fig. 8 and shows an example of the movement of the stage of the present invention when two product wafers are measured simultaneously. This paper music scale is applicable to the Chinese National Standard (CNS) A4 specification (2lOX297mm) (please read the precautions on the back before filling in this page) t -21-A7 B7 5. Description of the invention (19) Figure 16 shows the simultaneous determination 2 units in the X direction and 3 units in the y direction with a total of # 6 product wafers. Example of the movement operation of the conventional mounting table. Figure 17 shows the simultaneous measurement of 2 in the X direction and 3 in the y direction for a total of 6 product wafers. The movement example of the mounting table of the present invention when the unit group is formed. FIG. 18 is a diagram showing an example of the movement operation of the conventional mounting table when the unit group formed by arranging six product wafers in the y direction is simultaneously measured. Fig. 19 is a diagram showing an example of the movement operation of the mounting table of the present invention when the unit group formed by arranging six product wafers in the y direction is simultaneously measured. Fig. 20 is a diagram showing an example of the conventional operation of marking and striking showing the inspection result. Fig. 21 is a diagram showing an example of the operation of the present invention showing the marking of inspection results. Fig. 22 is a flowchart explaining the movement control of the mounting table. Circle 23 is a flowchart explaining the movement control of the mounting table of the present invention. [Description of symbols] 1 Printed by the Consumer Labor Cooperative of the Central Standards Bureau of the Ministry of Semiconductor Wafer Economy ...-. I— In m I n--I--n ...... 1 ^ 1 1 ^ 1 In, 1 (please read the note ^ 'on the back before filling in this page) 2 Mounting table (clamping mounting table) 3 Detector 4 Mounting table control means 5 Detector control means 6 Inspection control means 3 1 X index Department 3 2 Y Index Department The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -22-A7 B7 V. Description of invention (20) Printed by Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy 3 3 Simultaneous determination Command part 1 1 3 4 X / y axis control part 1 1 I 3 5 X axis motor drive part 1 I please 1 | 3 6 y axis motor drive part first read 1 I read 1 1 3 8 XADDR part back 1% 1 of 1 3 9 YADDR Part Note 1 | Event 4 1 X Τ EG Part Refill 1 4 2 Y Τ EG Part% This page 1 4 3 T EG Part 1 5 2 Product wafer 1 1 5 3 Product crystal 1 1 6 4 τ Ε G wafer order 1 a X size of product wafer 1 I b y size of product wafer 1 1 I c Τ EG X size of wafer 1 4 A product wafer 丨 · B product wafer 1 1 T Τ Ε G chip ^ I a X 1 6 b X 1 6 X-axis coordinate 1 ay 1 6, by 1 6 y-axis coordinate 1 1 1 7 1 7 5 product wafer 1 1 I 8 1 / -s »/ 8 5 product wafer 1 1 I (1) (1 6) Action sequence 1 1 The paper size is applicable to China National Standard (CNS) A4 specification (2IOX297mm) -23-

Claims

320737 A8 B8 C8 D8 VI. Patent application scope 1. A semiconductor inspection device is a semiconductor wafer that is repeatedly arranged with a product wafer that can be inspected to form a product and a characteristic τ EG wafer is placed on a mounting table, and the scanning is moved and scanned The detector is used to check the quality of each product wafer, and the mark of the inspection result is marked in the semiconductor inspection device of the product wafer. The characteristics are: equipped with: repeating the arrangement on the semiconductor to form multiple products by the same irradiation The unit group formed by the wafer and one TEG wafer is any length of the combined length units formed by the unit of length of the unit group, the unit of length of the product wafer, the unit of length of the TEG wafer, or a combination of these combinations The unit is set as a moving unit of the mounting table and controls the mounting table control means of the mounting table. τ " (Please read the note # ^ on the back before filling in this page) Γ Printed by the Central Bureau of Industry and Consumer Cooperatives of the Ministry of Economic Affairs, the paper size is free to use China National Standard (CNS) A4 specification (210X297mm) -24 -