TW316717U - Method of stripping a nitride layer from a wafer and wet etching apparatus using the same - Google Patents
Method of stripping a nitride layer from a wafer and wet etching apparatus using the sameInfo
- Publication number
- TW316717U TW316717U TW086203291U TW86203291U TW316717U TW 316717 U TW316717 U TW 316717U TW 086203291 U TW086203291 U TW 086203291U TW 86203291 U TW86203291 U TW 86203291U TW 316717 U TW316717 U TW 316717U
- Authority
- TW
- Taiwan
- Prior art keywords
- stripping
- wafer
- same
- nitride layer
- wet etching
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 title 1
- 238000001039 wet etching Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- C11D2111/22—
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950037146A KR970022581A (ko) | 1995-10-25 | 1995-10-25 | 웨이퍼상에 형성된 질화막의 제거방법과 이에 사용되는 습식식각장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW316717U true TW316717U (en) | 1997-09-21 |
Family
ID=19431323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086203291U TW316717U (en) | 1995-10-25 | 1996-05-04 | Method of stripping a nitride layer from a wafer and wet etching apparatus using the same |
Country Status (4)
Country | Link |
---|---|
US (1) | US5843850A (zh) |
JP (1) | JPH09129591A (zh) |
KR (1) | KR970022581A (zh) |
TW (1) | TW316717U (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6207068B1 (en) * | 1998-11-18 | 2001-03-27 | Advanced Micro Devices, Inc. | Silicon nitride etch bath system |
US6326313B1 (en) * | 1999-04-21 | 2001-12-04 | Advanced Micro Devices | Method and apparatus for partial drain during a nitride strip process step |
US6245681B1 (en) * | 2000-01-25 | 2001-06-12 | Advanced Micro Devices, Inc. | Dual temperature nitride strip process |
US20040115957A1 (en) * | 2002-12-17 | 2004-06-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for enhancing wet stripping of photoresist |
JP2004214243A (ja) * | 2002-12-27 | 2004-07-29 | Toshiba Corp | 半導体ウェーハのエッチング方法及びエッチング装置 |
KR100498495B1 (ko) * | 2003-05-07 | 2005-07-01 | 삼성전자주식회사 | 반도체 소자의 세정 시스템 및 이를 이용한 세정방법 |
KR100559040B1 (ko) * | 2004-03-22 | 2006-03-10 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
KR100929817B1 (ko) * | 2007-10-23 | 2009-12-07 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 장치의 제조 방법 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4559098A (en) * | 1983-05-23 | 1985-12-17 | Azonic Technology, Inc. | Nitride etch bath |
JPH0296334A (ja) * | 1988-10-01 | 1990-04-09 | Nisso Eng Kk | 高温エッチング液の循環方法 |
-
1995
- 1995-10-25 KR KR1019950037146A patent/KR970022581A/ko not_active Application Discontinuation
-
1996
- 1996-03-14 JP JP8058051A patent/JPH09129591A/ja active Pending
- 1996-05-04 TW TW086203291U patent/TW316717U/zh unknown
- 1996-10-23 US US08/735,503 patent/US5843850A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR970022581A (ko) | 1997-05-30 |
US5843850A (en) | 1998-12-01 |
JPH09129591A (ja) | 1997-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0665580A3 (en) | Method and device for global planarization of the surface of a semiconductor wafer. | |
IL123520A0 (en) | Method of modifying an exposed surface of a semiconductor wafer | |
GB2287827B (en) | Method for wet processing of a semiconductor substrate | |
SG63637A1 (en) | Apparatus and method for cleaning semiconductor wafers | |
GB9614061D0 (en) | Method and apparatus for dicing a substrate | |
KR970700933A (ko) | Besoi 웨이퍼와 그 외부 에지를 스트립하는 방법(besoi wafer and process for stripping outer edge thereof) | |
GB2333267B (en) | Method of etching a silicon layer | |
EP0770926A3 (en) | Method for forming fine pattern of semiconductor device | |
GB2316805B (en) | method for dry-etching of silicon substrate | |
EP0637064A3 (en) | Method and device for polishing extra flat wafers. | |
TW316717U (en) | Method of stripping a nitride layer from a wafer and wet etching apparatus using the same | |
AU1781499A (en) | Semiconductor etching process and apparatus | |
EP0706206A3 (en) | Method of etching silicon nitride | |
GB2308010B (en) | Method of lapping a wafer | |
GB9604189D0 (en) | A method of etching a semiconductor | |
GB9626363D0 (en) | A method of manufacturing a semiconductor device | |
GB2321964B (en) | Method of and apparatus for detecting a surface condition of a wafer | |
GB9708028D0 (en) | Method for forming element isolating film of semiconductor device | |
SG60137A1 (en) | Method and device for removing a semiconductor wafer from a flat substrate | |
EP0744764A3 (en) | Method and apparatus for manufacture of semiconductor devices | |
EP0600664A3 (en) | Dry etching process for a silicon thin film. | |
GB2323967B (en) | Method of forming a semiconductor device | |
EP0735594A3 (en) | Semiconductor assemblies and manufacturing processes used on an insulator | |
EP0744773A3 (en) | Semiconductor device having a plasma-processed layer and the method of manufacturing the same | |
GB2307344B (en) | Method for planarization of semiconductor device |