經濟部中央標率局員工消費合作社印装 A7 B7 五、發明説明（) 1 產業上之利用廣城 本發明『一種高速紅外線感測的光電場效體通道電晶 體』係以鐵電薄腹材料-致酸热作爲紅外線感測材料，並 5 结合具有高移動率（mobility )之快速體通道（bulk channel)場效電晶體结構，以獲得一高效率之紅外線感測 器。此種紅外線感測器，可應用於科學、商業及單事上， 如雷射侦測、飛彈導向、紅外線光譜儀、遙控器、防盜器 、熱像偵察等用途上。 10 習知技術 向來，紅外線感測器主要有二大類：熱電式及量子式 *熱電式感測器比其他感測器具有多項發點，譬如： 15 (1)可在室溫下操作，而量子式感測器爲抑制雜钒，須 在-100°C至-200°C低溫下操作。 ⑵具有較快的響應速度；依照M.Okuyama等人於1985 年Computers & Teleommunications 第21 卷第265 頁揭示内容，熱電式感測器比Golay cells的響應 20 速度更快； 傳統的熱電場效電晶體係採用表面通追（surface channel)形式结構，依照John P. Uyemura等人於1988 24年Addison Wesely第1章第21頁揭示内容，熱電場效電 2 I -^1 ^ I 裝 „ Γ 訂 I n * 線 (請先閱讀背面之注意事項再填寫本頁) _ · 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） A7 B7 五 1 、發明説明（） 晶备表·®的散射(scattering)及製程所發生之缺:陷(trap) 往往使得表面通道型结構具有較低的移動率(mobi 1 ity)。 依照M.Okuyama 等人於 1985 年Computers & Teleco-nununications 或同年 Ferroelectrics 第63 卷第243 頁 揭示内容，發現傳統熱電場效電晶體的速度仍然緩慢，最 佳的上升時間僅爲3.5 /us *而且光產生的電流很小不足1 wA，無法直接進行切換動作，需再經放大器加以放大， 更延遲整個系统之切換時間。 10 發明欲解決的課題 本發明之目的係提供一種可在室溫下操作，擁有快速 率、高靈软度的紅外線光電場效電晶體；該電晶體係具有 15金屬/鐵電薄膜7ρ-η接面異型基板(metal/ferroelectric th in f i lm/semiconductor)之禮通造場效電晶禮结構。 本發明之另一 9的係配合超欠型稂體電路(VLSI)製程 以製铺紅外線光電場效電晶體，可發展成積體式IR 0EIC。 F 丨裝 ： "訂 '線 (請先閱讀背面之注意事項再填寫本頁) · 經濟部中央標準局員工消費合作社印製 20 解決課題而採取的手段 本發明人等有鑑於傳紋的熱電場效電晶體採用表面通 24追(surface channel)形式之结構，造_成較低的移勤率（ 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部中央樣準局貝工消费合作社印装 A7 B7 五、發明説明（） 1 mobility)，延遲系統之切換時間〇 經銳意研究结茱’發現以禮通造结構(bulk channel) ，可使等效電阻降低；除此而外，所研製的元件，其紅外 5 光所引起之補偾電荷變化係位於空乏區(depletion layer )，其等效電容爲鐵電電容(ferroelectric capacitance) ，FC) ·聯空乏電容（depletion capacitance)。而傳統 的表面通道型場效電晶體，其補償電荷變化係位於反轉層 (inversion layer )，它的等效電容僅爲鐵電電容（FC 10 )，依照S.M.Sze 於 Physics of semiconductor* devices 專著1981年第2版第7章所揭露方法相較之下，本研製之 感測器具有較低之等效電容。 本發明『一種高速紅外線感測的光電場效體通道電晶 15體』係以鐵電薄菝材料-鈦酸鉛作爲紅外線感測材料，由 於擁有較低電阻及較低的電容，可以提高反應速率因而解 決過去速度緩慢的炔點，另外，光產生的電流也大幅度提 升達到100 /ιΑ以上，具有較高靈软度之功能。 20 各構成事項之説明 本發明『一種高速紅外線感測的光電場效體通造電晶 體』係以鐵電薄腹材料-鈦酸齡作爲紅外線感測材料’其 24場效電晶體结耩如圖一所示，係以金屬/鐵電薄漢接 4 本紙張尺度遙用中國國家標準（CNS ) A4规格（210X 297公釐） ---------?-裝-----—.訂------一線 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局貝工消費合作社印製 S〇l〇〇4_E_ 五、發明説明U , , 1 (4 » metal/ferroelectric thin film/semi- conductor)所構成。該電晶#4之整赌架構爲p-n接面之發 基板⑷爲其接面基板，於其上方之中央處裝設有鐵電薄 腹(5，ferroelectric thin film);又於其上方裝設閘極 5 金屬薄腹（2，gate)。另外於P-η接面之矽基板⑷上方 相鄰於鐵電薄暖(5)左右兩側分別裝設源極金展薄膜：(1， source)以及吸極金屬薄後(3 , drain) 〇於p-n接面之發 基板(4)下方裝設有背極金屬薄腹(6，substrate)。 10 上迷之p-n同質異塑接面梦基板，可爲n/p+蜇或p/n+ 型，該半導體基板所使用材料可選用IV族之矽（Si)，或 II-V族硫化铋(CdS)或III-V族砷化鎵(GaAs)之類複合 材料。而鐵電薄蓰⑸係裝設於接面基板以感測紅外線* 閘極金屬薄菝作爲紅外線感測器之接光電極。 15 製備本發明『一種高速紅外線感測的先電場效禮通道 電晶體』之程序如下： 清洗P-n同質異型接面矽基故晶片； 以射頻磁控濺鍍系紋一成長鈦酸鐵電薄膜:於同質異 20 型接面矽基板上； 蒸著一閘極金屬薄暖於該鈦酸鉛鐵電薄膜Ji ; 然後利用光彫像術轴刻鈦酸鉛，以便開出源極及吸極 窗户； 24 利用蒸鍍及舉離技術，蒸著一源極金屬薄胰及一吸極 5 (請先閲讀背面之注意事項再填寫本頁) _裝·A7 B7 printed by the Employees ’Consumer Cooperative of the Central Standardization Bureau of the Ministry of Economic Affairs 5. Description of the invention () 1 Industrial use of Guangcheng The invention“ a high-speed infrared sensing photoelectric field effect channel transistor ”is made of ferroelectric thin-web material -Acid heating is used as an infrared sensing material, and it combines a fast bulk channel field effect transistor crystal structure with high mobility to obtain a high efficiency infrared sensor. This infrared sensor can be used in science, commerce, and single events, such as laser detection, missile guidance, infrared spectrometer, remote control, anti-theft device, thermal imaging reconnaissance, etc. 10 Conventional technology has always been, there are two main types of infrared sensors: thermoelectric and quantum * thermoelectric sensors have more points than other sensors, for example: 15 (1) can be operated at room temperature, and The quantum sensor must be operated at a low temperature of -100 ° C to -200 ° C in order to suppress the vanadium. ⑵ has a faster response speed; according to M. Okuyama et al. 1985 Computers & Teleommunications Volume 21, page 265, the thermoelectric sensor responds faster than Golay cells 20; the traditional thermoelectric field effect The crystal system adopts a surface channel structure. According to John P. Uyemura et al., 1988, Addison Wesely, Chapter 1, page 21, the effect of thermoelectric field 2 I-^ 1 ^ I is installed ... Γ Order the I n * line (please read the precautions on the back and then fill out this page) _ · The paper size is applicable to China National Standard (CNS) A4 specification (210X297mm) A7 B7 51, invention description () Crystal preparation table · Scattering of ® and defects in the manufacturing process: traps often make the surface channel structure have a lower mobility (mobi 1 ity). According to M. Okuyama et al. 1985 Computers & Teleco- nununications or the same year Ferroelectrics Vol. 63 page 243 reveals that it is found that the speed of traditional thermoelectric field effect transistors is still slow, the optimal rise time is only 3.5 / us * and the current generated by light is very small, less than 1 wA, unable to After the switching operation is performed, it needs to be amplified by an amplifier to delay the switching time of the entire system. 10 PROBLEMS TO BE SOLVED BY THE INVENTION The object of the present invention is to provide an infrared ray that can operate at room temperature and has a fast rate and high flexibility. Photoelectric field effect transistor; the transistor system has a 15-metal / ferroelectric thin film 7ρ-η junction profile substrate (metal / ferroelectric th in fi lm / semiconductor). The system of No. 9 cooperates with the VLS process to fabricate infrared photoelectric field effect transistors, which can be developed into an integrated IR 0EIC. F 丨 Installation: " Subscribe 'line (please read the notes on the back first (Fill in this page again) · Printed by the Ministry of Economic Affairs, Central Bureau of Standards, Employee and Consumer Cooperatives 20. Methods taken to solve the problem The inventors have considered that the structure of the thermoelectric field effect transistors in the form of a surface channel 24 surface channel, Create a lower transfer rate (This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) Printed A7 B7 by the Beige Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. () 1 mobility), delaying the switching time of the system. After a keen research, it was found that a bulk channel can reduce the equivalent resistance; in addition, the developed component has an infrared 5 light The induced charge change is located in the depletion layer (depletion layer), and its equivalent capacitance is ferroelectric capacitance (ferroelectric capacitance, FC). Depletion capacitance. For the traditional surface channel field effect transistor, the compensation charge change is located in the inversion layer, and its equivalent capacitance is only the ferroelectric capacitance (FC 10), according to SMSze in Physics of semiconductor * devices monograph In comparison with the method disclosed in Chapter 7 of the second edition of 1981, the sensor developed in this study has a lower equivalent capacitance. The present invention "a high-speed infrared sensing photoelectric field effect channel electric crystal 15 body" uses ferroelectric thin smilax material-lead titanate as infrared sensing material, because of lower resistance and lower capacitance, it can improve the reaction The rate thus solves the slow alkyne point in the past. In addition, the current generated by the light has also been greatly improved to more than 100 / ιΑ, which has the function of higher flexibility. 20 Description of various constituent items The present invention "a high-speed infrared sensing photoelectric field effect body-made transistor" uses a ferroelectric thin belly material-titanate as an infrared sensing material. Its 24 field effect transistors are as follows As shown in Figure 1, the metal / ferroelectric thin metal is used to connect 4 sheets of paper, and the Chinese national standard (CNS) A4 specification (210X 297 mm) is used remotely ---------?-Install ---- -—. Subscribe ----- First line (please read the notes on the back before filling in this page) S〇l〇〇4_E_ printed by Beigong Consumer Cooperative of Central Bureau of Standards of the Ministry of Economy V. Description of invention U,, 1 ( 4 »metal / ferroelectric thin film / semi-conductor). The overall structure of the electric crystal # 4 is a pn junction hair substrate ⑷ is its junction substrate, and a ferroelectric thin film (5, ferroelectric thin film) is installed in the center above it; and it is installed above it Gate 5 Metal thin belly (2, gate). In addition, on the silicon substrate ⑷ of the P-η junction, adjacent to the left and right sides of the ferroelectric thin warm (5), the source gold exhibition films are installed: (1, source) and the thin metal sink (3, drain) 〇 A thin metal back (6, substrate) is installed under the hair substrate (4) of the pn junction. 10. The pn homogenous heteroplastic junction dream substrate can be of n / p + sting or p / n + type. The semiconductor substrate can be made of group IV silicon (Si) or group II-V group bismuth sulfide (CdS) ) Or Group III-V gallium arsenide (GaAs) composite materials. The ferroelectric thin 铰 ⑸ is installed on the junction substrate to sense infrared light * The gate metal thin smilax is used as the light receiving electrode of the infrared sensor. 15 The procedure for preparing the "a high-speed infrared sensing pre-electric field effect channel transistor" of the present invention is as follows: cleaning Pn homogenous heterojunction silicon-based wafers; growing a ferrotitanate thin film by radio frequency magnetron sputtering system: On a silicon substrate with a heterogeneous 20-type junction; steaming a gate metal thinner than the lead titanate ferroelectric thin film Ji; and then engraving lead titanate using photolithography axis to open the source and sink windows; 24 Using vapor deposition and lift-off technology, steaming a source metal pancreas and a suction electrode 5 (please read the precautions on the back before filling this page) _ 装 ·
，1T 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 經濟部中央橾準局員工消費合作社印製 A7 B7 五、發明説明（） 1 全属薄珑於该同質具漤矽基板上，並且令別位於该鐵 電薄腹兩側與其接觸； 蒸著一背電極金屬薄猨於該矽基板之另一面，体形成 鈦酸鉛鐵電薄胰紅外線感測器； 5 製餚本發明『一種高速紅外線感測的光電場效體通道 電晶體』程序上，射頻磁控濺鍍系統之濺鍍jfe直徑爲5 cm *靶與试件座距爲5 cm，成長功率爲100 W，濺射氣體爲 W；氬氣(Ar)與10¾氧氣之混和氣禮，成長壓力爲6 mtorr 10 ，基板溫度爲500 Ό-ΘΟΟ °C。鉛鐵電薄腹之成長方法可 爲射镇滅錢(RF Sputtering)，或雷射蒸鍵(Laser evapor *ation) ° 本發明『一種高速紅外線感測的光電場效體通道電晶 15艟』，係以鈦酸鐵電薄腹作爲紅外線感測材料，再配合 具有高移動率(mobility)之快速技通造（bulk channel) 場效電晶體结構，以得到高速響應。基於鈦酸鉛鐵電薄菝 具有良好的熱電性質且可在室溫下操作，因此本發明之紅 外線感測器具有下列之特色： 20 (1)可在室溫下操作，因而解決傳統量子式紅外線感測器 需要低溫設備，方能在-100°C至-200t：低溫下操作 缺點，因此可降低高昂之成本。 ⑵具有超越其他结構熱電紅外線光電場效電晶體的高速 24 響應，它的上升時間僅需2.3微秒。 6 11 I ^ I 抑衣 ~~ - I - -IT111 f 1— (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度逋用中國國家標準（CNS ) A4規格（210X297公嫠） 經濟部中央標準局員工消费合作社印製 A7 B7 五、發明説明（） 1 ⑶本發明之紅外蟓感測器蛄構，容易被製佛成袪殖式紅 外線感測元件。 元件之特性測轼： 5 本發明以HP 4145B semiconductor parameter analy -zer測量其電流/電壓曲線；以HP 54600 A型示波器 測其響應時間；以長970 nm的IR LED作光源，圖二 爲鈦酸鉛鐵電薄腹紅外線光場效電晶體琢於不同紅外 線強度之典型吸極電流/吸極電壓曲線圖，圖三爲不 10 同的紅外線強度對吸極電流的影響，圖二與圈三表示 吸極電流随著紅外線強度之增加而增加，圖四爲HP 54600A型示波器經由紅外線光切換本感測器·所測得 之奂載波型，具有快速的2.3u s上升時間。 15 本發明之功效 综合上述内容得知，本發明『一種高速紅外線感測的 光電場效艘通道電晶體』，具有下列功效： (1) 量子式紅外線感測器雜快速，但爲了抑制雜机，須在 -lOOt至-200°C低溫下操作，造成成本高昴，而本感 20 測器不僅快速且能在室溫下操作，無須多餘之低溫附 加設備0 (2) 具有超越其他結構熱電紅外線光電場效電晶體的高速 響應，它的上升時間僅需2.3u s。 24 (3)容易製成積體式紅外線感測无件。 7 -------，丨裝-------訂-----^ -線 (請先閱讀背面之注意事項再填寫本頁) . 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部中央標準局貝工消費合作杜印製 301ϋ〇4 五、發明説明（） 1 確實爲實用之創新發明。 圖式説明： 5 圖一體通道紅外線光電場效電晶體结構 1···源極 （source) 2···閘極 （gate) 3·.·吸極 （drain) 4···p-n 接面之梦基板(p-n Si semiconductor*) 10 5·*·鐵電薄後 (ferroelectric thin film) 6 …背極 （substrate) 圖二琢於不同紅外線中之吸極電流/吸極電壓典型曲線圖 :從下往上分別爲0.200uW , 500uW，800uW紅外線強 度(垂直軸:50u A/div，水平軸:0.8 V/div) 15圖三不同紅外線強度對吸極電流的影響· Id，dark表示 吸極暗電流，Id爲吸極電流。 圖四體通造紅外線光電場效電晶豬之時間響應垂直軸:IV / div，水平抽:l〇u s/div) 圖五極化處理後，在鐵電薄膜7半導體介面處之能帶圖 20 (a)未曝光 〇>)瀑光 501 ·..鐵電（ferroe 1 ectr i c) 502.. ·η 區（n layer) 503.. . (Ec) 24 504... (Εν) 8 本紙張尺度適用中國國家梂準（CNS > A4規格（210X297公釐） I-------T 麵裝-------,訂------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央樣準局員工消費合作杜印製 A7 B7 五、發明説明（） 1 505···空乏區（depletion layer) 爲使審查委灵更進一步了解本發明，以下藉由一具體 之實施例，配合所附之圖式對本發明予以蛘細説明，説明 5 如后： 實施例 其次以本實施例進一步詳細説明： 爲了使本感測器能操作在空乏模式下(depletion mode)， 10在使用前必須敗一極化處理:200°C溫度下，對閘極施加-8伏特的電壓，歷時20分鐘，極化處理完畢後，在鈦酸鉛 鐵電薄腠内之殘留極化将產生一電場，驅離在η層内的電 子，產生一空乏區，正電荷，於是半導體的能帶將向上弩 曲，如圖5(a)所示，當此元件隊於紅外線中，鈦酸紹鐵電 15薄膜吸收紅外線後，爲產生些歡溫度上升，導致腠内之極 化變弱，進而空乏區寬度，正捕償電荷，變小，因而η堃 通道及吸極電導變大，其能帶闽如圖5(b)所示。 综合上迷内容得知，本發明『一種高速紅外線感測的 20光電場效體通道電晶體』以金屬/鐵電薄膜yp-n接面異型 I^Onetal/ferToelectricthinfilni/semicondiictor)， 再配合其有高移動率之快速體通道(bu lk channe 1)場效電 晶體結構，以得到高速響應。確實爲具有實用性之到新發 24明。 9 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---------r -裝------.訂-----|~線 (請先閲讀背面之注意事項再填寫本頁) -, 1T This paper scale is applicable to the Chinese National Standard (CNS) Α4 specification (210X297 mm) A7 B7 printed by the Employee Consumer Cooperative of the Central Bureau of Economics of the Ministry of Economic Affairs 5. Invention description () 1 All thin and thin in this homogenous silicon substrate On the side of the ferroelectric thin abdomen, and make contact with it on both sides of the thin ferroelectric thin abdomen; steaming a back electrode metal thin on the other side of the silicon substrate to form a lead titanate ferroelectric thin pancreatic infrared sensor; 5 Invented the procedure of "a high-speed infrared sensing photoelectric field effect body transistor", the sputtering jfe diameter of the RF magnetron sputtering system is 5 cm * the distance between the target and the test piece is 5 cm, and the growth power is 100 W. Sputtering gas is W; mixed gas of argon (Ar) and 10¾ oxygen, growth pressure is 6 mtorr 10, substrate temperature is 500 Ό-ΘΟΟ ° C. The growth method of lead-iron electric thin belly can be RF Sputtering or Laser evapor * ation. The present invention is a "high-speed infrared sensing photoelectric field effect channel electric crystal 15 艟" It uses a thin ferrotitanate belly as an infrared sensing material, coupled with a fast channel channel field effect transistor crystal structure with high mobility to obtain a high-speed response. Based on lead titanate ferroelectric thin Smilax has good thermoelectric properties and can be operated at room temperature, so the infrared sensor of the present invention has the following characteristics: 20 (1) can be operated at room temperature, thus solving the traditional quantum formula Infrared sensors require low-temperature equipment in order to operate at -100 ° C to -200t: shortcomings at low temperatures, which can reduce high costs. ⑵It has a high-speed 24 response that surpasses other structure thermoelectric infrared photoelectric field effect transistors, and its rise time only takes 2.3 microseconds. 6 11 I ^ I Yiyi ~~-I--IT111 f 1— (Please read the precautions on the back and then fill out this page) This paper uses the Chinese National Standard (CNS) A4 specification (210X297 public daughter) Ministry of Economic Affairs The A7 B7 is printed by the Staff Consumer Cooperative of the Central Bureau of Standards. V. Description of the invention (1) The structure of the infrared sensor of the present invention can be easily made into a reproductive infrared sensor. The characteristics of the components are measured: 5 The present invention uses the HP 4145B semiconductor parameter analy-zer to measure its current / voltage curve; the HP 54600 A-type oscilloscope measures its response time; the IR LED with a length of 970 nm is used as the light source. Figure 2 shows titanic acid Lead-iron ferroelectric thin-belt infrared light field effect transistors are modeled on typical sink current / sink voltage curves of different infrared intensities. Figure 3 shows the effect of different infrared intensities on the sink current. Figure 2 and circle 3 show The sink current increases with the increase of infrared intensity. Figure 4 shows the HP 54600A oscilloscope switching the sensor through infrared light. The measured carrier type has a fast rise time of 2.3us. 15 The efficacy of the present invention is obtained by synthesizing the above content. The present invention "a high-speed infrared sensing photoelectric field effect channel transistor" has the following effects: (1) The quantum infrared sensor is very fast, but in order to suppress the miscellaneous machine , Must be operated at a low temperature of -lOOt to -200 ° C, resulting in high cost, and this sensor 20 is not only fast and can be operated at room temperature, no additional low-temperature additional equipment is required 0 (2) It has thermoelectricity beyond other structures The high-speed response of the infrared photoelectric field effect transistor has a rise time of only 2.3us. 24 (3) It is easy to make an integrated infrared sensor. 7 -------, 丨 install ------- order ----- ^-line (please read the notes on the back before filling in this page). This paper size is applicable to China National Standard (CNS ) A4 specification (210X297 mm) 301 ϋ〇4 produced by Beigong Consumer Cooperation, Central Bureau of Standards, Ministry of Economic Affairs V. Description of invention () 1 It is indeed a practical and innovative invention. Diagram description: 5 Picture of integrated channel infrared photoelectric field effect transistor structure 1 ··· source (gate) 2 ··· gate (gate) 3 ··· drain (drain) 4 ··· pn junction Pn Si semiconductor * 10 5 · * · ferroelectric thin film 6… substrate Figure 2 Typical curves of sink current / sink voltage in different infrared rays: from below Upwards are 0.200uW, 500uW, 800uW infrared intensity (vertical axis: 50u A / div, horizontal axis: 0.8 V / div) 15 Figure 3 The effect of different infrared intensity on the sink current · Id, dark represents the sink dark current , Id is the sink current. Figure 4: Time response of the infrared photoelectric field effect pig made from the body-made infrared photoelectric vertical axis: IV / div, horizontal pumping: 10us / div) Figure 5 Energy band diagram at the semiconductor interface of the ferroelectric thin film 7 after polarization treatment 20 (a) unexposed 〇> waterfall light 501 · .. ferroelectric (ferroe 1 ectr ic) 502 .. · η region (n layer) 503... (Ec) 24 504 ... (Εν) 8 The size of this paper is suitable for China National Standard (CNS & A4 specification (210X297mm) I ------- T face-mounted -------, ordered ------ line (please read first Note on the back and then fill out this page) Employee Consumer Cooperation of the Central Prototype Bureau of the Ministry of Economic Affairs Du Printed A7 B7 V. Description of the invention () 1 505 ·· Depletion layer (depletion layer) In order for the review committee to understand the invention further In the following, the present invention will be described in detail with a specific embodiment and the accompanying drawings, and the description 5 is as follows: The embodiment is further described in detail in this embodiment: In order to enable the sensor to operate in the depletion mode In depletion mode, 10 must be polarized before use: at 200 ° C, apply a voltage of -8 volts to the gate for 20 minutes. The polarization process is completed , The residual polarization in the lead titanate ferroelectric thin pan will generate an electric field, driving away the electrons in the η layer, creating an empty depletion zone, positive charge, so the energy band of the semiconductor will cross upward, as shown in Figure 5 ( As shown in a), when this device is in infrared, the ferroelectric titanate 15 thin film absorbs infrared, and in order to produce some temperature rise, the polarization in the 腠 becomes weaker, and then the width of the depletion zone is positive. Becomes smaller, so the conductivity of the η 堃 channel and the sink electrode becomes larger, and its energy band is shown in FIG. "Crystal" uses a metal / ferroelectric thin film yp-n junction profile I ^ Onetal / ferToelectricthinfilni / semicondiictor), coupled with its fast mobility channel (bu lk channe 1) field-effect transistor structure with high mobility to obtain a high-speed response . It is indeed a new issue with practicality. 9 This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) --------- r -installation ------. Order ----- | ~ line (please read first (Notes on the back then fill this page)-