經濟部中央橾準局負工消費合作社印製 A7 B7 五、發明説明（/ ) <發明之範圍> 本發明是有關一種半等體支架之製造方法，特別是有 關一種具有更小的支腳與更智的間距*且使用蝕刻法及横 歷法製成之半導體支架的製造方法者。 眾所周知，半等賭支架（lead frame)是用Μ支捋一 半導骽元件，且將半導體元件與一電路連接之裝置。一般 的半導體支架具有：一基座，用來裝設半導體晶片；一内 支腳連接至半導體晶片，Μ及一夕卜支腳，用Μ使內支腳與 外電路連接〇 目前，半導體支架的製造係採用模壓法與化學触刻法 。第1圖表示一種藉著模歷法製造半導體支架的方法，其 中，一支架板11係置於一模體12上，板體11以固定體13壓 住，使之被夾持於模體12的上面，而板體11則Μ—沖頭14 沖歷，藉此形成一如第1Β圖所示的半導體支架。 在利用触刻法製造半導體支架的方法中，支架板的表 面乃以光致抗触劑（photoresist )被覆，然後，以光致 抗触劑被覆的表面則被掩罩並且曝光，藉此形成一預定的 圖樣。随後，支架板的兩面乃利用唄灌一種定歷腐触溶液 於其上而形成半導體支架。 由於半導體晶片愈來愈小，且愈來愈集成*因此，支 架愈精密的製造也就更加需要，特別地，定義成一個内導 體的寬度與兩個内導體間隙之和的間距（pitch )，目卩必 需更智。然而，利用傳統的模壓法與触刻法時，內支腳的 製造，即會因為支腳之間的間隙必然會有一定的間隙而無 本紙張尺度適用中國國家標率（CNS ) A4規格（210X297公釐） I I I 裝.—I I I 訂 —線 (请先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消费合作社印裝 A7 B7 五、發明説明（ 法變得更為狹窄0 第2圖是一種半導體支架的平面圖，在其中，内支腳 22之間的間隙愈向用以安装半導體晶片的基座21愈智，在 利用傳統模壓法或蝕刻法製成的半導體支架中，支架的内 支腳22可被製成的最小寬度是0.1 nun，内支腳之間的最小 間隙也是0.1腿〇因此，利用傳統的方法所製造的半専體 支架，其内支腳22的最小間距大約為0.2 mm。 <發明之總論> 因此，本發明之一目的即在提供一種具有更微细之内 支腳的半導體支架，其內支腳的間隙乃大為減小。 為了達成上述的目的，本發明提供的半導體支架的製 造方法包括了模壓步驟與蝕刻步驟。亦即，其包括了：半 蝕刻支架板的一個部份，而其中支架板的厚度則藉著部份 触刻而減少：以及，藉著沖展設施模壓已經半蝕刻了的支 架板的部份，而將其切斷。 <圖式之簡單說明> 本發明的上述目的與功效，將藉由下列參照附圖所作 之較佳具體實例之說明而得到完全的了解： 附圃者： 第lmiB係利用傳統模壓法製造半導發支架之示意圖 Ο 第2：圖是一半導體支架的平面圖。 第3圖係第2圖之A部份的放大圖。 第4圖係表示第3圖所示的支架板，其係部份被模歷 —4 — 本紙張尺度逋用中國國家標準（CNS ) A4規格（210X297公釐） ----------^------ΐτ------it (請先閲讀背面之注意事項再填寫本頁) 五、發明説明（孓 A7 B7 經濟部中央標準局負工消费合作社印製 或触刻。 第5圖係表示第4圖中已部份被触刻的支架板部份示 意圖。 第6圖係從第5鼴之VI — VI線所視之截面圖。 第7圖係表示第5圖中已被半蝕刻的部份要被沖頭模 壓的情況，Μ及 第8圖為依照本發明之方法所製造出來的内支腳的截 面圖。 <較佳具體實例之詳细描述> 第3圖是第2圖所示之支架板30的Α部份的放大圖。 請參考第3圖，虛線代表作為半導體支架之內支腳31或夕卜 支腳32的部份，依照本發明，内支腳31其間的間隙相當寬 的部份係利用傳統的製造方法所形成。此亦即，如第4圖 所示，在半導體支架板30離支腳尖端33較〜預定距離D更 遠的部份，内支腳31與夕卜支腳32係利用模壓法或触刻法形 成。此處，距離D係，較佳的，大約為0.8 nun。 至於其餘的部份34，如第5圖所示，内支腳31係利用 半蝕刻法與如第7圖所示，使用一種小沖頭的模歷法來形 成。首先*支架板30係先被半触刻而使得支架板30的其餘 部份34被部份独刻，如第6圖所示，然後，請參考第7圖 ，支架街30乃被横歷，而利用一沖頭41截斷部份已被触刻 的部份*藉此，產生半導體支架，由於已被半触刻部份34 的厚度已減小’甚至於很薄的沖頭41均可截斷部份34，第 8圖即表示了一已被沖頭41截斷之半導體支架的内支腳31 —5 - 本紙伕尺度通用中國國家標準（CNS ) A4規格（2丨0><297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝. 訂 锑 A7 B7 五、發明説明（） 依照本發明之實施例，支腳31 (請參第8圖）的寬度 W，支腳31之間的間隙S，而因此支腳31的間距p分別可 減低至O.lOmin、0.050mm與0.150nun的最小值。此處，間距 P可減少至傳統支腳間距的50% *比較傳統的製造半導體 支架的方法，本發明可Μ達到一個相當小的内支腳間距。 此處，必需予Μ陳明者*本發明的權利範圃並不Μ上 述較佳具體的實施例為限，若熟悉此技術的人士對於上述 實施例所作之改變或修正，在不哮開本發明之精神時，自 然應該在本發明的範圍之內〇 ----------^II (請先聞讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局貞工消費合作社印製 一 6 一 本紙涞尺度適用中國國家樣準（CMS ) A4現格（210X297公釐）Printed by the Ministry of Economic Affairs, Central Bureau of Preservation and Consumer Cooperatives A7 B7 V. Description of the invention (/) < Scope of the invention > The present invention relates to a method of manufacturing a half-equibody stent, in particular to a smaller support The distance between the foot and the smarter *, and the manufacturing method of the semiconductor stent made by the etching method and the horizontal calendar method. As is known to all, a semi-lead frame is a device that uses M to support a semi-conductor device and connect the semiconductor device to a circuit. A general semiconductor support has: a base for mounting a semiconductor chip; an inner leg connected to the semiconductor chip, M and a foot, and the inner leg is connected to an external circuit with M. Currently, the The manufacturing department adopts the molding method and the chemical engraving method. FIG. 1 shows a method of manufacturing a semiconductor support by a die calendar method, in which a support plate 11 is placed on a mold body 12, and the plate body 11 is pressed by a fixing body 13 so that it is clamped to the mold body 12 Above, the plate body 11 is punched by the M-punch 14, thereby forming a semiconductor support as shown in FIG. 1B. In the method of manufacturing a semiconductor support using the lithography method, the surface of the support plate is covered with a photoresist, and then the surface covered with the photoresist is masked and exposed, thereby forming a The predetermined pattern. Subsequently, the two sides of the support plate are filled with a calendar rot solution to form a semiconductor support. As semiconductor chips are getting smaller and smaller and more integrated *, the more precise manufacturing of the bracket is also needed, in particular, defined as the pitch of the width of one inner conductor and the sum of the gaps between the two inner conductors, The head must be wiser. However, when using the traditional molding method and touch engraving method, the manufacturing of the inner legs, because the gap between the legs will inevitably have a certain gap and no paper size is applicable to China National Standard (CNS) A4 specifications ( 210X297mm) III Pack.—III Order—Line (please read the notes on the back before filling in this page) A7 B7 printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of invention (The law becomes more narrow 0 2 is a plan view of a semiconductor support in which the gap between the inner legs 22 increases toward the base 21 for mounting semiconductor wafers. In a semiconductor support made by conventional molding or etching, the support The minimum width of the inner legs 22 can be made is 0.1 nun, and the minimum gap between the inner legs is also 0.1 legs. Therefore, the minimum spacing of the inner legs 22 of the half-body bracket manufactured by the traditional method It is about 0.2 mm. ≪ Overview of the invention > Therefore, one object of the present invention is to provide a semiconductor support with finer inner legs, the gap of the inner legs is greatly reduced. In order to achieve the above The purpose of the present invention is to provide a method for manufacturing a semiconductor support that includes a molding step and an etching step. That is, it includes: half-etching a portion of the support plate, and the thickness of the support plate is partially engraved Reduction: And, by stamping out the part of the bracket plate that has been half-etched by the stamping facility, and cutting it off. ≪ Simple description of the drawings > The above object and effect of the present invention will be attached by the following reference The illustration gives a better understanding of the description of the specific examples: Attached: The first lmiB is a schematic diagram of the manufacture of a semi-conductive stent using traditional molding method. The second: The figure is a plan view of a semiconductor stent. The third figure is the first Figure 2 is an enlarged view of part A. Figure 4 shows the bracket plate shown in Figure 3, which is part of the model calendar-4-This paper standard uses the Chinese National Standard (CNS) A4 specification (210X297 Ali) ---------- ^ ------ lsτ ------ it (please read the precautions on the back before filling in this page) V. Invention description (孓 A7 B7 Ministry of Economic Affairs Printed or touched by the Central Bureau of Standards' Consumer Labor Cooperative. Figure 5 shows the fourth figure. Partial schematic diagram of the part of the support plate that has been engraved. Figure 6 is a cross-sectional view from the VI-VI line of the fifth mole. Figure 7 is the half-etched part of Figure 5 to be In the case of punch stamping, M and Figure 8 are cross-sectional views of the inner legs manufactured according to the method of the present invention. ≪ Detailed description of preferred specific examples > Figure 3 is shown in Figure 2 Enlarged view of part A of the support plate 30. Please refer to FIG. 3, the dotted line represents the inner leg 31 or the outer leg 32 of the semiconductor support. According to the present invention, the gap between the inner legs 31 is quite wide Is formed using traditional manufacturing methods. That is, as shown in FIG. 4, in the portion of the semiconductor support plate 30 that is farther from the tip 33 of the leg than the predetermined distance D, the inner leg 31 and the spur leg 32 are molded or engraved. form. Here, the distance D is preferably about 0.8 nun. As for the remaining part 34, as shown in FIG. 5, the inner leg 31 is formed by a half-etching method and as shown in FIG. 7 using a die punching method with a small punch. First, the bracket plate 30 is first half-touched so that the rest 34 of the bracket plate 30 is partially carved, as shown in Figure 6, then, please refer to Figure 7, the bracket street 30 is traversed, And using a punch 41 to cut off the part that has been engraved * By this, a semiconductor holder is produced, since the thickness of the part 34 that has been half-contacted has been reduced, even the thin punch 41 can be cut off Part 34, Figure 8 shows the inner leg 31-5 of a semiconductor support that has been cut off by the punch 41-the standard of Chinese paper standard (CNS) A4 (2 丨 0> <297mm ) (Please read the precautions on the back before filling in this page)-Pack. Order antimony A7 B7 5. Description of the invention () According to the embodiment of the present invention, the width W of the leg 31 (please refer to FIG. 8), the leg The gap S between 31, and therefore the pitch p of the legs 31 can be reduced to the minimum values of 0.10 min, 0.050 mm, and 0.150 nun, respectively. Here, the pitch P can be reduced to 50% of the conventional foot pitch. * Compared with the conventional method of manufacturing a semiconductor support, the present invention can achieve a relatively small inner foot pitch. Here, those who must be given to Chen Ming * The scope of the rights of the present invention is not limited to the above-mentioned preferred specific embodiments. If a person familiar with this technology makes changes or amendments to the above-mentioned embodiments, he will not start writing The spirit of the invention should naturally be within the scope of the invention. -------- ^ II (please read the precautions on the back and then fill out this page) Order the consumption of the Ministry of Economy Central Standards Bureau Cooperatives print one 6 one copy of Lai standard for China National Sample Standard (CMS) A4 format (210X297mm)